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41. 发明专利

JP2006128708A Cleaning method for semiconductor 审中-公开
标题翻译：半导体清洗方法
公开(公告)号：JP2006128708A
公开(公告)日：2006-05-18
申请号：JP2005331374
申请日：2005-11-16
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HARADA YOSHIHISA , NIWA MASAAKI
IPC分类号： H01L21/304 , C11D7/04 , C11D7/18 , C11D17/08
摘要： PROBLEM TO BE SOLVED: To improve reliability by establishing the optimal content density of a medicinal solution containing a complexing agent capable of removing metal in SC-1 cleaning for use in the cleaning of a semiconductor substrate.
SOLUTION: A method comprises steps of cleaning the front surface of a semiconductor substrate with a semiconductor front surface treatment agent containing alkali, a hydrogen peroxide, and water as constituents, and rinsing the front surface of the semiconductor substrate with ultrapure water after cleaning. When a complexing agent is added to at least one of the semiconductor front surface treatment agent and ultrapure water for rinse, the density of the complexing agent is set to be in a range of 0.9 to 1.8 times of the saturated density of the complexing agent added to metal in the solution. This makes it possible to expect an improvement in reliability by a metal removing effect by the complexing agent and suppresses reduction in reliability caused by carbon pollution to be small.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提高可靠性，通过在用于清洗半导体衬底的SC-1清洗中建立含有能除去金属的络合剂的药物溶液的最佳含量密度。解决方案：一种方法，包括用含有碱，过氧化氢和水作为组分的半导体前表面处理剂清洁半导体衬底的前表面的步骤，并且用超纯水冲洗半导体衬底的前表面清洗。当向至少一种半导体前表面处理剂和超纯水中加入络合剂进行冲洗时，络合剂的密度设定在加入的络合剂的饱和密度的0.9〜1.8倍的范围内在金属溶液中。这使得可以期望通过络合剂的金属除去效果提高可靠性，并且抑制由碳污染引起的可靠性降低。版权所有（C）2006，JPO＆NCIPI

42. 发明专利

JP2003179051A METHOD OF FORMING INSULATION FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2003179051A
公开(公告)日：2003-06-27
申请号：JP2001377200
申请日：2001-12-11
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： H01L21/283 , H01L21/316 , H01L21/822 , H01L27/04 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To achieve a high-k film having excellent insulating characteristics with high reliability. SOLUTION: A deposition temperature is changed twice when an HfO 2 film is deposited on a silicon substrate 10. Hence, three polycrystal HfO 2 layers are laminated so as to have a discontiguous grain boundary. Specifically, a first HfO 2 layer 12, a second HfO 2 layer 14, and a third HfO 2 layer 15 are formed. COPYRIGHT: (C)2003,JPO

43. 发明专利

JP2002293543A METHOD FOR FORMING THIN MEMBRANE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002293543A
公开(公告)日：2002-10-09
申请号：JP2001104679
申请日：2001-04-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： C01G25/00 , H01L21/316 , H01L21/822 , H01L27/04 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a thin membrane usable for a gate insulating membrane, enabling to make it very thin easily by treating at a low temperature without forming the membrane in a high temperature atmosphere. SOLUTION: This method for forming a thin membrane comprises the steps of immersing a silicon substrate 7 in sol solution 6 comprising methoxyethanol, water and a precursor containing a membrane-forming material composed of Pb.Zr.TiO2 in a concentration of 0.01 to 0.5 mol/l in term of oxide, pulling up and forming a thin membrane composed of Pb.Zr.TiO2 on the surface of the silicon substrate 7, which enables low temperature formation of the thin membrane having an arbitrary composition on the silicon substrate.

44. 发明专利

JP2000306909A INSULATION FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
公开(公告)号：JP2000306909A
公开(公告)日：2000-11-02
申请号：JP11221299
申请日：1999-04-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI , HARADA YOSHIHISA
IPC分类号： H01L21/762 , H01L21/263 , H01L21/265 , H01L21/316 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To obtain an insulating film forming method, by which a thin nitride oxide film with a thickness of not larger than 2.5 nm calculated in terms of an oxide film in a selected region on the surface of an oxidation object, such as a silicon layer and a semiconductor device manufacturing method utilizing the film forming method, etc. SOLUTION: A process, in which the surface of the upper silicon region 42 of an SIMOX substrate is doped with nitrogen, and a process in which an electron beam, is applied to a region including at least a part of the region doped with nitrogen in an atmosphere containing oxigen to make an oxide film 46 containing nitrogen grow on the silicon surface are included. The oxide film 46 becomes a nitride oxide film, which suppresses the deterioration of transistor characteristics caused by the diffusion of impurities, such as boron, etc., from a gate electrode 48 into the silicon region 42.

45. 发明专利

JP2000266529A METHOD AND APPARATUS FOR MEASURING FILM THICKNESS AND FILM DEPOSITION SYSTEM 失效
公开(公告)号：JP2000266529A
公开(公告)日：2000-09-29
申请号：JP7474899
申请日：1999-03-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOSHIHISA , NIWA MASAAKI
IPC分类号： G01B15/02 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a film thickness measuring apparatus being used in silicon semiconductor process in which the thickness of an extremely thin silicon oxide film, and the like, can be measured conveniently and accurately. SOLUTION: The film thickness measuring apparatus comprises a monochromatic X-ray generator 20, a substrate 3 formed with a film 15 on the surface and held in the vacuum, and an ammeter 4 connected with the substrate 3 and the ground and measuring the quantity of electrons excited by the monochromatic X-rays generated from the generator 20. When the substrate 3 is irradiated with monochromatic X-rays, photoelectrons are excited to vacuum level by the atoms on the substrate 3 and emitted. Surface of the substrate is thereby charged positive electrically and electrons flow thereto from the ground to bring about steady state. Quantity of sample current can be measured accurately up to a low level under steady state in proportion to the quantity of photoelectrons radiated into the vacuum and the photoelectrons has correlation with the density of atoms in the film 15 in the vicinity of the surface of the substrate. Consequently, the thickness of a film on the substrate 3 can be measured accurately by measuring the quantity of sample current.

46. 发明专利

JPH11340187A DEVICE AND METHOD FOR CLEANING AND DRYING 失效
公开(公告)号：JPH11340187A
公开(公告)日：1999-12-10
申请号：JP14720098
申请日：1998-05-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOSHIHISA , NIWA MASAAKI
IPC分类号： F26B3/04 , F26B5/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To uniformly achieve steam dry within much shorter time while using an organic medium or the like. SOLUTION: Just after an object to be cleaned such as a semiconductor substrate 13 is cleaned inside a cleaning and drying chamber 12, medium steam for dry such as isopropyl alcohol is sprayed to the rotating semiconductor substrate 13. Thus, liquid in the form of drop of water on the object to be cleaned is removed from the object to be cleaned and speedy drying is realized.

47. 发明专利

JPH11260939A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11260939A
公开(公告)日：1999-09-24
申请号：JP5798098
申请日：1998-03-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To improve the data writing speed. SOLUTION: This is a non-volatile semiconductor memory device, using a mis-orientated substrate 10 which has a plurality of terraces 12 having crystallographocally smooth surfaces and having at least one step 11 located at the boundary part of the plurality of the terraces 12. In this case, the step 11 is formed substantially vertically with respect to the channel direction in the vicinity of a drain region 22. Hot electrons, which are injected into a floating gate 15 from the channel region through the step 11, are increased, and the data writing speed is improved.

48. 发明专利

JPH118220A VAPOR DRYER 失效
公开(公告)号：JPH118220A
公开(公告)日：1999-01-12
申请号：JP15667597
申请日：1997-06-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOSHIHISA , ONISHI TERUTO , NIWA MASAAKI , IDOTA TAKESHI
IPC分类号： F26B3/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce the consumption of power and a volatile chemical by providing a means for supplying a vapor jet means with only the quantity of volatile chemical required for the vapor drying, which is required. SOLUTION: After a semiconductor substrate B has been cleaned and carried into a quartz tank 1, the quartz thank 1 is sealed. Subsequently, a pump 6 is drive to transport a volatile chemical A from a volatile chemical tank 5 through an introduction tube 4 to heating sections 7A, 7B. Carrying ends 4a, 4b of the introduction tube 4 surrounded by a heating tube 6 is heated up through a heater wire 9 above the boiling point of the volatile chemical A. Upon reading the carrying ends 4a, 4b, the volatile chemical A is heated to produce a drying medium vapor C, which is then delivered to first and second vapor-blowing plates 2, 3 and jetted towards the semiconductor substrate B. The drying medium vapor C may be produced with only the required quantity for drying the semiconductor substrate B and when required.

49. 发明专利

JPH10209141A SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF FORMING FILM 失效
公开(公告)号：JPH10209141A
公开(公告)日：1998-08-07
申请号：JP1218797
申请日：1997-01-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOSHIHISA , NIWA MASAAKI , ONISHI TERUTO , IDOTA TAKESHI
IPC分类号： H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To form a uniform film on the entire substrate surface, using an oxidizing furnace in a semiconductor manufacturing apparatus. SOLUTION: A semiconductor manufacturing apparatus comprises a reactor vessel 2 capable of housing a substrate, a pressure vessel 1 capable of housing the reactor vessel 2, an infrared lamp 4 for heating the substrate, gas-introducing and -exhausting means 7, 8, and flow rate control valves 10, 11 attached to the means 7, 8. Using this apparatus, a film is formed during heating after introduction of a reactive material gas stops. Elimination of the gas flow on the substrate during film-forming makes it possible to form a uniform film.

50. 发明专利

JPH09260323A METHOD AND EQUIPMENT FOR CLEANING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH09260323A
公开(公告)日：1997-10-03
申请号：JP6273496
申请日：1996-03-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONISHI TERUTO , NIWA MASAAKI , IDOTA TAKESHI , HARADA YOSHIHISA
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To wash a semiconductor substrate easily at low cost by washing the semiconductor substrate with washing gas which is less poisonous and less corrosive. SOLUTION: With washing gas including molecules which generate carbon monoxide or methane being brown against a semiconductor substrate A, a light beam is cast on the semiconductor substrate A or a section near the substrate A to let the washing gas show a photochemical reaction Active carbon monoxide or active methane caused by the photochemical reaction of the washing gas with the light beam and a contaminant attaching to the semiconductor substrate A are let to react with each other and then a reactant caused the the reaction is evaporated to be removed.

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