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    • 43. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS6021521A
    • 1985-02-02
    • JP12771583
    • 1983-07-15
    • HITACHI LTDHITACHI MICROCUMPUTER ENG
    • WASHIO KATSUYOSHIHAYASHI MAKOTOWATABE TOMOYUKIOKABE TAKAHIRO
    • H01L21/28
    • PURPOSE:To certainly form a contact hole at the position on the desired diffusion layer and obtain an ultra miniature elements by forming a diffusion layer through difference in the thickness of oxide films and by forming a contact hole on the diffusion layer through the self-aligning method utilizing difference in thickness of oxide film. CONSTITUTION:An oxide film 2 is formed on a substrate 1, an oxide film is removed from the area where a diffusion layer is to be formed, a thin oxide film 2' is formed by thermal oxidation in view of making difference in the thickness of oxide films in such area where the diffusion layer is formed or not formed, and diffusion impurity implanted. Next, a contact hole 5 is opened after forming diffusion layer 4 and an electrode 6 is formed. In this constitution, the electrode comes to contact with the area other than the diffusion layer even when a contact hole is formed in the area other than the diffusion layer due to displacement of mask of contact. Namely, the contact hole can always be formed on the diffusion layer and the diffusion layer and contact hole have the self-alignment structure which does not require a margin for alignment.
    • 45. 发明专利
    • DETECTION OF CRACK
    • JPS5841341A
    • 1983-03-10
    • JP13849181
    • 1981-09-04
    • HITACHI LTD
    • HAYASHI MAKOTOSAKATA SHINJI
    • G01N27/20
    • PURPOSE:To detect the location of a crack and its length with high precision and easiness by providing a wiring of many lead wires at the periphery of a member where crack is liable to occur and measuring the potential differences in the lead wires and judging by comparing those differences. CONSTITUTION:In order to measure a potential V0 that becomes a reference two measurement terminals 4 are provided with a distance l between them at a part where a crack is not likely to occur, and many measurement terminals 5 are provided with a distance l among them at a part where the crack is liable to occur. A DC current is made to flow in an entire construction member 1 from a DC current source 3 through current supply terminals 2. When a crack 13 is formed in the member 1, a potential difference V that is measured by a minute current voltmeter 14 becomes larger than the potential difference V0. The potential difference V is affected by the measurement terminal distance l and the current supply terinal distance l0, but if l0 becomes large, the effect disapeears. The accuracy of measurement of the length of a crack a/W becomes hiher as the ratio of the potential difference V/V0 becomes larger. Because many wires are required as V/V0 becomes large, the l is made 1-2 times the width W of a plate.
    • 49. 发明专利
    • WHITEEXXRAYS STRESS MEASURING DEVICE
    • JPS56111438A
    • 1981-09-03
    • JP1362680
    • 1980-02-08
    • HITACHI LTD
    • HAYASHI MAKOTONEMOTO SADAO
    • G01L1/00G01L1/25
    • PURPOSE:To improve the stress measurement efficiency and measurement precision of a stress measuring device by constituting amplification and processing sytem in one system by using a couple of detectors formed from the same single crystal and having the same characteristics. CONSTITUTION:White X-rays radiated from white-X-rays source 2 strike sample 3 and are diffracted by sample 3. Those diffracted X-rays are detected by semiconductor detectors 4 and 5 made of the same single crystal. Their detection signals, after amplified by preamplifiers 6 and 7, are inputted to main amplifier 9 via the 1st multiplexer 8. The amplified signal is inputted to multichannel analyzer 11 for an energy analysis via the 2nd multiplexer synchronized with the 1st multiplexer 8. Analysis values of it are stored in memories 12 and 13 respectively and the stored values, when showing sufficient energy, are outputted to and analyzed by computer 14 to obtain the stress value of the sample. Thus, the efficiency and precision of the measurement can be improved.