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41. 发明专利

JPS5814751B2 失效
公开(公告)号：JPS5814751B2
公开(公告)日：1983-03-22
申请号：JP2967877
申请日：1977-03-17
申请人： HITACHI LTD
发明人： SHIMADA SATOSHI , TANABE MASANORI , NISHIHARA MOTOHISA , YAMADA KAZUJI , MATSUDA YASUMASA , SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , TAKAHASHI YUKIO , KATOGI KATSUYA , AI MITSUO
IPC分类号： G01D5/16 , G01L1/18 , H01L29/84 , H01L45/00

42. 发明专利

JPS57128074A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPS57128074A
公开(公告)日：1982-08-09
申请号：JP1292881
申请日：1981-02-02
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , NISHIHARA MOTOHISA , SUZUKI KIYOMITSU , SHIMADA SATOSHI , KOBORI SHIGEYUKI , TANABE MASANORI , SATOU HIDEO
IPC分类号： H01L29/84
摘要： PURPOSE:To obtain the sensor having high measuring accuracy by a method wherein when the Si single crystal, on which four diffused resistance layers are provided on the surface and a concaved section to be used for diaphragm formation is provided on the reverse side, is adhered to a fixing base stand, an Si base stand with a through hole bored on the (100) or (110) face in its center part is used. CONSTITUTION:The four diffused resistance layers 2 to be used for the assembling of a bridge are formed on the surface of an Si substrate 1, a concaved section is provided on the reverse side by performing an etching, and the remaining part of the substrate 1 is used as a thin diaphragm section 3. Then, this semiconductor pressure sensor is adhered to an Si base stand 5. At this time, the through hole 6 to be provided in the center part of the base stand 5 is formed in such a manner that the face (100) or (110) will be appearing and at the same time, the hole 6 is formed into contractive shape. Also, a thin film 7 of boron silicate glass is used as the binding material for the adhesion of the sensor and the base stand 5. Through these procedures, the temperature characteristic of the sensor and the base stand are brought almost to the same degree, no deformation is generated on the diaphragm, and there exists no variation of resistance on the resistance layer.

43. 发明专利

JPS5736870A Semiconductor diaphragm type sensor 失效
标题翻译：空值
公开(公告)号：JPS5736870A
公开(公告)日：1982-02-27
申请号：JP11164680
申请日：1980-08-15
申请人： Hitachi Ltd
发明人： TANABE MASANORI , SHIMADA SATOSHI , NISHIHARA MOTOHISA , YAMADA KAZUJI , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
CPC分类号： H01L29/84
摘要： PURPOSE:To reduce the influences of temperature, induced noise and static pressure to a semiconductor diaphragm type sensor by specifying the thicknesses of two types of diaphragm supporting members to one another. CONSTITUTION:The outer peripheral thick part 12 of a semiconductor diaphragm having an outer peripheral thick part 12 and a central thick part 11, a thin part 13 at the intermediate between the thick parts 12 and 11, and piezo resistance elements 14-17 formed on the upper surface of the thin part 12 is bonded fixedly to the first supporting member 9. The first member 9 is bonded fixedly to the second supporting member 10 over the overall bottom to be sandwiched with a semiconductor diaphragm 8. Then, the thickness of the fixed part of the first member 9 to the second member 10 is formed more than twice the first member 9.
摘要翻译：目的：通过确定两种类型的隔膜支撑构件的厚度，来减少温度，感应噪声和静压对半导体隔膜式传感器的影响。构成：具有外周厚部12和中央厚部11的半导体膜的外周厚部12，厚部12,11之间的中间的薄部13和形成在薄部12的上表面固定地固定到第一支撑构件9.第一构件9固定地连接到第二支撑构件10上，整个底部被半导体隔膜8夹持。然后，第一构件9的固定部分到第二构件10形成为第一构件9的两倍以上。

44. 发明专利

JPS5730923A Capacitor type pressure difference transmitter 失效
标题翻译：电容型压力差分变送器
公开(公告)号：JPS5730923A
公开(公告)日：1982-02-19
申请号：JP10502080
申请日：1980-08-01
申请人： Hitachi Ltd
发明人： SHIMADA SATOSHI , TANABE MASANORI , NISHIHARA MOTOHISA
IPC分类号： G01L13/06 , G01D5/24 , G01L9/00
CPC分类号： G01L9/0072
摘要： PURPOSE:To contrive to equalize the tension of a measuring diaphragm by joining the measuring diaphragm and base plates comprising an insulating material by positive electrode joining method. CONSTITUTION:The pressure difference transmitter is constituted by a pressure receiving part 10 and a pressure difference sensor 12. Both sides of the pressure receiving part main body 14 are welded and fixed to the outsides of a high pressure side seal diaphragm 16 and a low pressure side seal diaphragm 18. A high pressure side pressure receiving chamber 20 and a low pressure side pressure receiving chamber 22 are formed between the diaphragms and the pressure receiving part main body 14. At the center of the pressure receiving main body 14, the outside of a center diaphragm 24 is welded, and a high pressure side separating chamber 26 and a low pressure side separating chamber 28 are formed between said diaphragm and the pressure receiving main body 14. A pressure difference sensing element 50 is provided in the pressure difference sensor 12. To both sides of a measuring diaphragm 52, the base plates 54 and 56 comprising the insulating material are joined by positive electrode joining method.
摘要翻译：目的：通过正极接合法连接测量膜片和包含绝缘材料的基板来达到均衡测量膜片张力的目的。构成：压差传感器由受压部10和压差传感器12构成。受压部主体14的两侧被焊接固定在高压侧密封膜16的外侧，低压侧侧密封隔膜18.在隔膜和受压部主体14之间形成有高压侧压力接收室20和低压侧压力接收室22.在受压主体14的中心处，焊接中心隔膜24，并且在所述隔膜和受压主体14之间形成有高压侧分离室26和低压侧分离室28.压差检测元件50设置在压力差传感器12中在测量隔膜52的两侧，通过正极接合连接包括绝缘材料的基板54和56 方法。

45. 发明专利

JPS56108276A SEMICONDUCTOR DIAPHRAGM TYPE SENSOR 失效
公开(公告)号：JPS56108276A
公开(公告)日：1981-08-27
申请号：JP1004980
申请日：1980-02-01
申请人： HITACHI LTD
发明人： TANABE MASANORI , SHIMADA SATOSHI , NISHIHARA MOTOHISA , YAMADA KAZUJI , YASUKAWA AKIO , SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PURPOSE:To decrease the stress produced in the diaphragm and obtain excellent linearity in a semiconductor diaphragm type sensor by forming the monocrystalline Si diaphragm on which a plurality of piezo-resistor elements are attached, by a thick peripheral fixing portion and a thick central rigid portion surrounded therewith. CONSTITUTION:As the diaphragm 1 constituting the sensor, monocrystalline Si having (110) surface is used. A thick central rigid portion 31 is provided in the center, and a thick peripheral fixing portion is formed surrounding the central rigid portion 31 through a groove pointing to the lower surface. Thus, also the central portion of the diaphragm 1 is formed with a rigid portion. On the surface of the diaphragm 1, a plurality of piezo-resistor elements 5 are formed by diffusing P type impurities so as to be on axes and located at positions 52 and 54 on the fixing portion 3 and positions 51 and 53 on the rigid portion 31. Then, the diaphragm 1 is supported by a support 11 and surrounded by a case 10. Each element 5 is connected through a lead wire 7 to a terminal electrode 8 on a terminal strip 9 provided on the surface of the case 10, to form a bridge circuit.

46. 发明专利

JPS55124001A DISPLACEMENT CONVERTER 失效
公开(公告)号：JPS55124001A
公开(公告)日：1980-09-24
申请号：JP3129479
申请日：1979-03-16
申请人： HITACHI LTD
发明人： TANABE MASANORI , SHIMADA SATOSHI , YASUKAWA AKIO , NISHIHARA MOTOHISA , OSADA TAKEO
IPC分类号： G01B7/16 , G01L1/18 , H01L29/84
摘要： PURPOSE:To obtain the displacement converter of high sensitivity and high reliability by making strain gauges by the plural fine gauge strips which are mutually parallel and are connected in series and making the lengths of the fine strips and the length of one side of a semiconductor pellet to the specified relation. CONSTITUTION:The fine strain gauge strips 29a-29c and 30a-30c formed by diffusing impurites on a silicon pellet 21 are connected in series by low resistance layers 31a, 31b and 32a, 32b respectively and are disposed parallel to have the specified resistance values. Here, the relation of lg/lp

47. 发明专利

JPS55103410A CANTILEVERRTYPE DISPLACEMENT CONVERTER 失效
公开(公告)号：JPS55103410A
公开(公告)日：1980-08-07
申请号：JP1043379
申请日：1979-02-02
申请人： HITACHI LTD
发明人： SHIMADA SATOSHI , TANABE MASANORI , YAMADA KAZUJI , NISHIHARA MOTOHISA , MATSUOKA YOSHITAKA , OSADA TAKEO
IPC分类号： G01L1/18 , G01D5/16 , G01L1/22
摘要： PURPOSE:To realize the excellent temperature properties for the strain gauge of the cantiliver-type displacement converter by forming the gauge into such crystal direction that secures the sensitivity to the stress in the longer direction of the cantilever and no sensitivity to the lateral stress each. CONSTITUTION:The Si chips 3 and 3' are adhered to small thickness part 2 of cantilever 1, and lever 1 is fixed to case body 6 through fixing part 5. Four units of diffusion gauges 31, 32, 31' and 32' (31' and 32' are located at the back of 31 and 32 each on the drawing) in chips 3 and 3' are connected to the Wheatstone bridge in order to secure increment of sensitivity as well as the temperature compensation. And if the longer directions of gauges 31 and 32 are set toward axis , the piezo-resistance coefficient becomes maximum. Thus the diffusion is given toward the axis, and as a result the force (or displacement) to be applied to power point 4 can be detected with the heighest sensitivity and in the form of the resistance change of the gauses 31 and 32 each.

48. 发明专利

JPS5529742A PRESSURE SENSOR 失效
公开(公告)号：JPS5529742A
公开(公告)日：1980-03-03
申请号：JP10249178
申请日：1978-08-22
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , TANABE MASANORI , SHIMADA SATOSHI , MATSUDA YASUMASA , NISHIHARA MOTOHISA , YAMAMOTO YOSHIKI , MATSUOKA YOSHITAKA , YASUKAWA AKIO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PURPOSE:To reduce a temperature error of a non-linear error by arranging a semiconductor storage gauge, which is formed on a diaphragm surface with its circumference fixed, where there is no strain crossing the gauge at right angles. CONSTITUTION:When a semiconductor storage gauge is formed on the surface of a diaphragm, the center of the semiconductor storage gauge is positioned where strain crossing at right angles the direction of a current flowing through the dominant sense part of the storage gauge is nearly zero. As a result, the gauge is arranged where strain perpendicular to the longish direction of the gauge is nearly zero, thereby reducing the temperature influence of a non-linear error.

49. 发明专利

JPS54151057A DISPLACEMENT MEASURING DEVICE 失效
公开(公告)号：JPS54151057A
公开(公告)日：1979-11-27
申请号：JP5888178
申请日：1978-05-19
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , NISHIHARA MOTOHISA , MATSUDA YASUMASA , SHIMADA SATOSHI , TANABE MASANORI , OSADA TAKEO
IPC分类号： G01D5/16 , G01B7/16 , G01D5/18
摘要： PURPOSE:To reduce bimetal effect and achieve the improvement in termperature characteristics by specifying the plate thickness of a cantilever and the plate thickness of a semiconductor strain gauge. CONSTITUTION:For a metal-made cantilever 1, the one of Fe-Ni-Co base alloy or Fe-Ni base of a coefficient of thermal expansion close to that of a semiconductor strain gauge chip 7 is used and is fixed at a fixing part 4 to receive displacements at its end part 5. In the displacement measuring device wherein the width of the semiconductor strain gauge 7 bonded to said coantilever by way of an adhesive layer 10 is more than 1/2 of the width of the cantilever 1, constituting this in such a manner that its T /H is 15 or over where the plate thickness of the cantilever 1 is T and the plate chickness of the strain gauge is H enables the displacement at the end of the cantilever with change in temperature to be sufficiently suppressed.

50. 发明专利

JPS53126880A SILICON DIAPHRAGM TYPE STRAIN GAUGE 失效
公开(公告)号：JPS53126880A
公开(公告)日：1978-11-06
申请号：JP4139677
申请日：1977-04-13
申请人： HITACHI LTD
发明人： SHIMADA SATOSHI , TANABE MASANORI , NISHIHARA MOTOHISA , YAMADA KAZUJI , MATSUDA YASUMASA , SATOU HIDEO , MATSUOKA YOSHITAKA , TAKAHASHI YUKIO , AI MITSUO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84 , H01L45/00
摘要： PURPOSE:To obtain gauges of good linearity and less effects of temperature by respectively forming P type Si gauge resistors of a direction radial to the axial direction of an N type Si substrate acting as a diaphragm of [110] face and P type Si gauge resistors of a direction tangential to the axis assuming 45 deg. to the axis.

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