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41. 发明专利

JPS5359372A MASK ALIGNMENT 失效
公开(公告)号：JPS5359372A
公开(公告)日：1978-05-29
申请号：JP13405376
申请日：1976-11-10
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , SUNAMI HIDEO , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU
IPC分类号： H05K3/00 , G03F1/00 , G03F1/38 , G03F9/00 , G05D3/00 , G05D3/12 , H01L21/027 , H01L21/30 , H01L21/68 , H05K3/06
摘要： PURPOSE:To reduce considerably the whole of alignment error by analyzing components of alignment error in an arithmetic processing unit and feeding back the result to a positioning mechanism after detecting the mutual positional slippage between patterns on a mask and on a wafer by a picture detector system.

42. 发明专利

JPS52144972A FORMATION METHOD OF PHOTO RESIST FILM 失效
公开(公告)号：JPS52144972A
公开(公告)日：1977-12-02
申请号：JP6114776
申请日：1976-05-28
申请人： HITACHI LTD
发明人： YANAGISAWA HIROSHI , MATSUZAWA TOSHIHARU , KAWAMOTO YOSHIFUMI
IPC分类号： H01L21/027 , H01L21/302
摘要： PURPOSE:To modify the properties of the surfaces of working wafers to the condition wherein moisture is hard to be adsorbed and improve adhesion by using 2.2.2-ethanol trifluoride as working wafers.

43. 发明专利

JPS5156799A 失效
公开(公告)号：JPS5156799A
公开(公告)日：1976-05-18
申请号：JP13095574
申请日：1974-11-15
申请人： HITACHI LTD
发明人： YANAGISAWA HIROSHI , UTSUKI HIROSHI , ASHIKAWA MIKIO , HASHIMOTO TETSUICHI , DOTA KIKUO , MATSUZAWA TOSHIHARU
IPC分类号： C09K3/00 , C01B13/14 , C09K3/18 , H01L21/308 , H01L21/465

44. 发明专利

JPH03281780A CVD DEVICE 失效
公开(公告)号：JPH03281780A
公开(公告)日：1991-12-12
申请号：JP8073990
申请日：1990-03-30
申请人： HITACHI LTD
发明人： MITANI KATSUHIKO , YANAGISAWA HIROSHI
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , H01L21/205 , H01L21/285
摘要： PURPOSE:To obtain a uniform gas flow in accordance with the pressure region of the gas in a wide range and the temp. range of a susceptor by providing a function which regulates the flow rate of gas and conductance at every group of a plurality of nozzles opposite to the susceptor. CONSTITUTION:The gas supply system of a CVD device is constituted of a plurality of gas pipeline groups 12, flow rate controlling device groups 13 and conductance valve groups 14. A gas nozzle 17 opposite to a susceptor 16 is equipped in a reactor 15. The gas supply face of the gas nozzle 17 has a plurality of aperture groups 21-23 for supplying gas, which are distributed in a concentrical circular shape. These aperture groups are allotted to a plurality of kinds of gas system (a)-(c). Respective gas systems (a)-(c) independently perform flow rate control and conductor control. Thereby the partial pressure of reactive gas on the surface of a sample is uniformed for the gas pressure in a wide range and a CVD film having uniform film thickness is formed.

45. 发明专利

JPH03215668A METHOD AND DEVICE FOR FORMING METALLIC FILM 失效
公开(公告)号：JPH03215668A
公开(公告)日：1991-09-20
申请号：JP1060690
申请日：1990-01-22
申请人： HITACHI LTD
发明人： MITANI KATSUHIKO , MASUDA HIROSHI , MOCHIZUKI KAZUHIRO , KUSANO CHUSHIRO , TAKAHASHI SUSUMU , YANAGISAWA HIROSHI
IPC分类号： C23C16/04 , C23C16/06 , C23C16/14 , C23C16/20 , H01L21/285
摘要： PURPOSE:To selectively and thickly deposit one metal on the other metal formed on a substrate without depositing this metal on an insulating film by pulsively passing a gas to generate a metal deposition reaction on the substrate provided with the above-mentioned insulating film. CONSTITUTION:The insulating film is provided on the substrate and further, the 2nd metallic film is formed. This substrate is disposed in a CVD device for metals. At least one kind of the gas to generate the 1st metal deposition reaction is passed pulsivily on this substrate. Any of WF6, SiH4, Si2H6 or H2 is used for the gas to generate the 1st metal deposition reaction if the above- mentioned 1st metal is W and the above-mentioned gas is adequately triisobutyl aluminum if the 1st metal is Al. The above-mentioned reactive gas is pulsively passed, by which the time for removing reaction side-products on insulators, etc., is afforded and the influence thereof is extremely lessened. The metallic film selectively and thickly deposited with the 1st metal, such as W or Al, on the 2nd metal is formed in this way.

46. 发明专利

JPS60250628A FORMING METHOD FOR PATTERN 失效
公开(公告)号：JPS60250628A
公开(公告)日：1985-12-11
申请号：JP10639184
申请日：1984-05-28
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： TANAKA TOSHIHIKO , YANAGISAWA HIROSHI , HASEGAWA NOBUO , SUZUKI YOSHISHIGE
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/316
摘要： PURPOSE:To completely prevent a coated silicide compound or oxide film or nitride film from separating by exposing the first layer organic surface with ozone atmosphere, and then coating the surface with the second layer silicide compound or oxide or nitride. CONSTITUTION:The first layer organic layer 2 is formed on an Si substrate 1. Then, an ozone generator is used to treat the surface of the layer 2. Then, a coated silicide compound layer 3 is formed. Thereafter, a resist pattern 4 is formed. Then, the pattern 4 is transferred to the layer 3 to form a pattern 3'. Thereafter, with the pattern 3' as a mask a pattern is transferred to the layer 2 to form a pattern 2'. A preferable pattern having no improper separation of the pattern 3' can be stably formed by the above step.

47. 发明专利

JPS6040695B2 失效
公开(公告)号：JPS6040695B2
公开(公告)日：1985-09-12
申请号：JP9504477
申请日：1977-08-10
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU
IPC分类号： G03F1/00 , G03F1/48 , G03F1/56 , H01L21/027 , H01L21/302

48. 发明专利

JPS59207628A Dry-etching method 失效
标题翻译：干蚀法
公开(公告)号：JPS59207628A
公开(公告)日：1984-11-24
申请号：JP8088583
申请日：1983-05-11
申请人： Hitachi Ltd
发明人： YANAGISAWA HIROSHI , KANEKO TADAO , KOBASHI TAKAHIRO , OOHAYASHI HIDEHITO
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To improve the dry-etching resistance efficiently in a short time by a method wherein a positive-type photoresist composed of phenol-novolack resin and naphthoquinonediazide is, for instance, exposed to a light of 400-430nm wavelength in an atmosphere whose partial pressure of aqueous vapor is less than 25%. CONSTITUTION:Electrodes 26, 27 are placed in a reaction chamber 25 and a preliminary exhaust chamber is provided adjacent to it. A mechanism, by which a specimen wafer 23 is temporarily held on a stage 24 before being transferred into the reaction chamber, is provided. A light from a mercury lamp 21 is applied to the wafer 23 on the stage 24 through a glass window 22. An Al evaporated film containing Si, which is to be etched, is formed on an Si substrate and a pattern is formed on the Si substrate by exposure and development using a positive resist. Then, the substrate is placed in the preliminary exhaust chamber and irradiated by ultraviolet rays for about 10sec on the stage 24. The substrate is transferred into the reaction chamber and the Al film is etched in plasma containing BCl3.
摘要翻译：目的：通过在苯酚酚醛清漆树脂和萘醌二叠氮化物中构成的正型光致抗蚀剂例如曝光于波长400-430nm的光的方法，在短时间内有效地提高干蚀刻电阻，水蒸汽的压力小于25％。构成：将电极26,27放置在反应室25中，并且在其附近设置预备排气室。提供了一种机构，通过该机构将样品晶片23暂时保持在载物台24上，然后再转移到反应室中。来自水银灯21的光通过玻璃窗22施加到载物台24上的晶片23.在Si衬底上形成含有要蚀刻的Si的Al蒸镀膜，并且在Si 底物通过曝光和显影使用正性抗蚀剂。然后，将基板放置在预排气室中，并在台24上用紫外线照射约10秒钟。将基板转移到反应室中，并在含有BCl 3的等离子体中蚀刻Al膜。

49. 发明专利

JPS5974626A Forming method for pattern 失效
标题翻译：模式的形成方法
公开(公告)号：JPS5974626A
公开(公告)日：1984-04-27
申请号：JP18454982
申请日：1982-10-22
申请人： Hitachi Ltd
发明人： HASEGAWA NOBUO , YANAGISAWA HIROSHI , TANAKA TOSHIHIKO
IPC分类号： G03F7/26 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/094
摘要： PURPOSE:To improve the stability of the pattern on the formation of the pattern through a multilayer resist method by exposing the surface of a first organic matter in plasma atmosphere using an active or inert gas and coating the surface of the organic matter with a silicon compound film. CONSTITUTION:An organic matter layer 2 of AZ1350J (the commodity name of Shipley Co., Ltd.) is formed thinly on an Si substrate 1, and heated for thirty min at 200 deg.C, and the layer 2 is surface-treated for fifteen sec under the conditions of 0.6 atm and W power by O2 gas by a plasma etching device. A coated silicon compound layer 3 consisting of OCD (the commodity name of Tokyo Oka Kogyo Co., Ltd.) is formed on the layer 2, and thermally treated for thirty min at 200 deg.C, and a resist pattern 4 is formed. The resist pattern 4 is transferred on the layer 3, and a pattern 3' is formed. A pattern is transferred on the layer 2 while using the pattern 3' as a mask, and the pattern 2' is formed.
摘要翻译：目的：通过多层抗蚀剂方法，通过使用活性或惰性气体暴露等离子体气氛中的第一有机物质的表面，通过使用硅化合物涂覆有机物的表面来提高图案形成的稳定性电影。构成：将Si1350J的有机物层2（Shipley Co.，Ltd。的商品名）在Si基板1上形成为薄层，在200℃下加热30分钟，对层2进行表面处理在0.6atm的条件下通过等离子体蚀刻装置通过O 2气体进行15秒的W功率。在层2上形成由OCD（商品名，东京工业株式会社制）构成的被覆硅化合物层3，在200℃下热处理30分钟，形成抗蚀剂图案4。抗蚀剂图案4在层3上转印，形成图案3'。使用图案3'作为掩模，在层2上转印图案，形成图案2'。

50. 发明专利

JPS57160128A FINE PATTERN FORMING METHOD 失效
公开(公告)号：JPS57160128A
公开(公告)日：1982-10-02
申请号：JP4555881
申请日：1981-03-30
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , IWAYAGI TAKAO , YANAGISAWA HIROSHI
IPC分类号： H01L21/30 , G03F7/038 , H01L21/027
摘要： PURPOSE:To enhance a resolution of projecting exposure by using polymer having phenol hydroxy group for photo resist. CONSTITUTION:By using photo resist containing alkali soluble compound having phenol hydroxy group and aromatic acid compound, a photo resist film is formed on the material to form a fine pattern. Far-ultraviolet rays are irradiated to the desirable portion of the photo resist film through a projecting exposure method to lower a solubility for the irradiated portion. Subsequently, a developing process is provided with alkali solution to remove the irradiated portion of the photo resist film and a pattern is formed. A etching is provided by using the pattern for a mask to form a fine pattern. Phenol hydroxy group can absorb remarkably the rays of the wavelength shorter than 300mm., while a specific aromatic acid compound can improve a sensibility for the far-ultraviolet rays.

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