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1. 发明专利

JPH0573045B2 失效
公开(公告)号：JPH0573045B2
公开(公告)日：1993-10-13
申请号：JP27674685
申请日：1985-12-11
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , ISHIGAKI AKYOSHI
IPC分类号： G03F7/30 , G03F7/20 , G03F7/26 , G06F19/00 , H01L21/027

2. 发明专利

JPS63232318A FORMATION OF FINE PATTERN 失效
公开(公告)号：JPS63232318A
公开(公告)日：1988-09-28
申请号：JP6376187
申请日：1987-03-20
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , SUNAMI HIDEO , SHIGENIWA AKIYOSHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To enable more true transcription of images on desired rectangles, by using two kinds of photomasks so that a common region is formed into a desired shape by superposing the photomasks and performing two stages of exposure operations. CONSTITUTION:Latent images of photomask patterns, including desired patterns, are formed on an observed region with a photoresist by a first stage of exposure operation. If patterns (limited to light interrupting patterns) of these photomasks are desired beforehand to be larger than the desired patterns, no corner parts exist on a region (the inside of a rectangle) where the desired patterns should be replicated, and so no deterioration in resolution occur due to the existence of the corner parts. When a second stage of exposure succeeds to use a pattern (a rectangle perpendicular to and congruent with the patterns 5 used in the first stage) so that regions 7 common to the patterns 5 of the photomask used in the first stage of exposure are formed into desired patterns, resolution deterioration which is peculiar to the rectangular corner does not occur so that more true latent images can be formed into desired patterns (squares).

3. 发明专利

JPS6040695B2 失效
公开(公告)号：JPS6040695B2
公开(公告)日：1985-09-12
申请号：JP9504477
申请日：1977-08-10
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU
IPC分类号： G03F1/00 , G03F1/48 , G03F1/56 , H01L21/027 , H01L21/302

4. 发明专利

JPS57160128A FINE PATTERN FORMING METHOD 失效
公开(公告)号：JPS57160128A
公开(公告)日：1982-10-02
申请号：JP4555881
申请日：1981-03-30
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , IWAYAGI TAKAO , YANAGISAWA HIROSHI
IPC分类号： H01L21/30 , G03F7/038 , H01L21/027
摘要： PURPOSE:To enhance a resolution of projecting exposure by using polymer having phenol hydroxy group for photo resist. CONSTITUTION:By using photo resist containing alkali soluble compound having phenol hydroxy group and aromatic acid compound, a photo resist film is formed on the material to form a fine pattern. Far-ultraviolet rays are irradiated to the desirable portion of the photo resist film through a projecting exposure method to lower a solubility for the irradiated portion. Subsequently, a developing process is provided with alkali solution to remove the irradiated portion of the photo resist film and a pattern is formed. A etching is provided by using the pattern for a mask to form a fine pattern. Phenol hydroxy group can absorb remarkably the rays of the wavelength shorter than 300mm., while a specific aromatic acid compound can improve a sensibility for the far-ultraviolet rays.

5. 发明专利

JPS56162744A FORMATION OF FINE PATTERN 失效
公开(公告)号：JPS56162744A
公开(公告)日：1981-12-14
申请号：JP6540480
申请日：1980-05-19
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , IWAYAGI TAKAO , DOUDA KIKUO , YANAGISAWA HIROSHI , KOBASHI TAKAHIRO , NONOGAKI SABUROU
IPC分类号： H01L21/30 , G03F7/012 , H01L21/027
摘要： PURPOSE:To form a pattern with high dry etching resistance and high resolution by using an alkali-soluble high polymer having phenolic OH groups and carrying out development with an alkaline developer after irradiating ultraviolet rays. CONSTITUTION:To an alkali-soluble high polymer such as novolak resin or polyvinylphenol is added 4, 4'-diazidodiphenyl sulfide represented by the formula (where A is an element or a substituent nonconjugative with 2 benzene rings, X is H or N3 and Z is N3 when X is H and Z is H or Cl when X is N3, respectively) or other compound as a sensitizer to far ultraviolet light, and they are dissolved in methylcellosolve acetate to prepare a photoresist. This photoresist is irradiated with far ultraviolet rays having 200-300nm, wavelengths and the unirradiated part is removed with an alkaline developer. Reflective sputter etching is then carried out using a mixed gas of C4F4 and He to obtain a photoresist pattern with high resolution.

6. 发明专利

JPS5368577A REMOVING METHOD OF POSITIVE TYPE PHOTO RESIST 失效
公开(公告)号：JPS5368577A
公开(公告)日：1978-06-19
申请号：JP14334276
申请日：1976-12-01
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , DOUDA KIKUO , HASEGAWA NOBUO
IPC分类号： H05K3/06 , G03F7/00 , G03F7/42 , H01L21/027 , H01L21/30
摘要： PURPOSE:To insure safety without using phenol or the like being powerful matter by radiating ultraviolet rays over the entire surface before removing positive type photo resist thereafter eremoving the resist with an organic solvent having been controlled to basic by making use of the characteristic that the positive type photo resist of the sensitized portion dissolves in a basic solution.

7. 发明专利

JPS5359368A PLASMA ETCHING 失效
公开(公告)号：JPS5359368A
公开(公告)日：1978-05-29
申请号：JP13404576
申请日：1976-11-10
申请人： HITACHI LTD
发明人： YANAGISAWA HIROSHI , KAWAMOTO YOSHIFUMI , MATSUZAWA TOSHIHARU , DOUDA KIKUO , HASHIMOTO TETSUKAZU
IPC分类号： C23F4/00 , C03C15/00 , C23F1/02 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To perform minute processing by plasma-etching PSG films in an atmosphere including organic compound having specially F, H and O.

8. 发明专利

JPS52143769A REMOVING METHOD OF POSITIVE TYPE PHOTO RESIST 失效
公开(公告)号：JPS52143769A
公开(公告)日：1977-11-30
申请号：JP6001376
申请日：1976-05-26
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , DOUTA KIKUO , HASEGAWA NORIO
IPC分类号： H01L21/30 , G03F7/42 , H01L21/027 , H01L21/302
摘要： PURPOSE:To remove resist simply and safely by developing positive type photo resist, then applying thereto ultraviolet exposure and using a basic solution.

9. 发明专利

JPH01136141A METHOD AND MATERIAL FOR FORMING PATTERN 失效
公开(公告)号：JPH01136141A
公开(公告)日：1989-05-29
申请号：JP29407787
申请日：1987-11-24
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , CHOKAI MINORU , MATSUZAWA TOSHIHARU , HASEGAWA NORIO , FUKUDA HIROSHI
IPC分类号： G03F7/00 , G03F7/004 , G03F7/09 , H01L21/027
摘要： PURPOSE:To form a resist pattern having high precision and high resolution by using a resist having sensitivity characteristic different in a direction along the thickness of the resist film. CONSTITUTION:For a negative resist, a whole surface of a substrate is irradiated uniformly with secondary exposing light after/or before pattern exposure, after adding a sensitizer exhibiting positive characteristic for light having a different wavelength to the pattern exposing light to the resist. If the absorption of light of the resist for the secondary exposing light is weak, an appropriate amt. of a dye which absorbs the secondary exposing light is added. For a positive resist, a negative sensitizer is added in place of the positive sensitizer to be used in the case of negative resist, and the resist is processed similarly as the negative resist. By this method, a pattern having an almost vertical section can be formed, so generation of slant pattern encountered frequently in negative resists is prevented, and precision of transfer in a stage of working of a substrate is improved.

10. 发明专利

JPS631034A SIMULATION METHOD 失效
公开(公告)号：JPS631034A
公开(公告)日：1988-01-06
申请号：JP14300286
申请日：1986-06-20
申请人： HITACHI LTD
发明人： YAMAMOTO SHUICHI , OUGO MASANORI , MATSUZAWA TOSHIHARU
IPC分类号： C23F1/00 , G06F17/50 , G06F19/00 , H01L21/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a simulation method for providing a processed shape reflecting the direction of incidence of the etching particles particularly in the dry etching, by making the movement direction of the surface include directions other than the normal direction of the surface. CONSTITUTION:When the etching particles take a Gaussian incidence probability- density distribution P(theta), the etch rate components VX, VY at a point A on a material 34 of expected angles theta1, theta2 are obtained by respectively calculating Rintegral P(theta)sinthetadtheta and Rintegral P(theta)costhetadtheta between theta1 and theta2 using a constant R, and anyway the etch rate depends on the expected angles which are determined by the angle of incidence theta and by the surface shape including the etching mask. Further, radicals of a uniform incidence probability-density distribution Q(theta) are present, the etch rate components VX, VY are obtained by integrating the X-and Y-components of R1P(theta)+R2Q(theta)+R3P(theta).Q(theta) between theta1 and theta2, and they also depend on the angle of incidence theta and the expected angles. That is, simulation is available also for RIE, taking into consideration radicals in addition to ions. Further, any distribution can be handled by utilizing the numerical integration calculus, and a process shape reflecting the angle of incidence of the etching particles can be predicted.

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