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    • 41. 发明专利
    • JPH05242433A
    • 1993-09-21
    • JP4439092
    • 1992-03-02
    • HITACHI LTD
    • NAKATANI RYOICHIKOYAMA NAOKIHAMAKAWA YOSHIHIRO
    • G11B5/39
    • PURPOSE:To obtain the magneto-resistance effect type head which is less affected by the magnetic field in the track width direction of the magnetic head by having a magnetic shield in the track width direction. CONSTITUTION:The magnetic shielding layer 12 is formed of 'Permalloy(R)' at 1mum film thickness on a nonmagnetic substrate 11 consisting essentially of Al2O3.TiC in order to produce the magnetic head having the magnetic shield in the track width direction. An insulating layer 13 consisting of Al2O3 is then formed at 0.27m film thickness on the layer 12. A yoke plate 17 having two sheets of Ni-Zn ferrite plates 14 and a gap 16 of glass 15 is polished to reduce its thickness to the track width. A magneto-resistance effect film 18 consisting of an Ni-Fe alloy and having 30nm thickness and a shunt film 19 consisting of Ti and having 30nm film thickness is then formed on the yoke plate 17. Lead wires 20 having multilayered structures consisting of Cr/Cu/Cr are formed. The resulted magneto-resistance effect element 21 is superposed on the insulating layer 13 and after the element is flattened by forming an insulating layer 22 consisting of Al2O3, the magnetic shielding layer 23 of an Ni-Fe alloy having 1mum film thickness is formed. The magneto-resistance effect element 24 is thus obtd.
    • 46. 发明专利
    • MAGNETO-RESISTANCE EFFECT TYPE HEAD
    • JPH04182912A
    • 1992-06-30
    • JP31149290
    • 1990-11-19
    • HITACHI LTD
    • YUHITO ISAMUMORIJIRI MAKOTOTAKEURA TORUKOYAMA NAOKIKITADA MASAHIRO
    • G11B5/39
    • PURPOSE:To allow the production of the head used for reproduction of the signals recorded at a high density at a high yield by forming a protective film under a film to be etched and sufficiently increasing the thickness of the protective film by taking the thickness distribution of the film to be etched and the distribution of etching speeds into consideration. CONSTITUTION:A lower shield 2, a lower gap film 3, a magneto-resistance effect film 4, a shunt bias film 5, an electrode 6 and an upper gap film 7 are formed on a substrate 1. The protective film 9 is thereafter formed. The protective film 9 is an electrical insulating material which does not arrive at the sliding surface and covers the upper gap film 7 and the electrode 6. The upper shielding film 8 on the protective film 9 is formed in succession and is patterned. The upper shielding film 8 is so formed that its one end arrives at the protective film 9. The thickness of the protective film is determined by taking the thickness distribution of the upper shielding film 8 and the distribution of the etching speeds into consideration and is usually sufficient at 1mum. The electrode 6 and the upper gap film 7 are prevented form being etched at the time of etching the upper shielding film 8 in this way.
    • 47. 发明专利
    • MAGNETO-RESISTANCE EFFECT TYPE HEAD
    • JPH043305A
    • 1992-01-08
    • JP10295390
    • 1990-04-20
    • HITACHI LTD
    • YUHITO ISAMUMORIWAKI HIDETOSHIKOYAMA NAOKI
    • G11B5/39
    • PURPOSE:To obtain a high regenerative output value by concentrating a sense current only in the vicinity of the area, where the electric resistance is most changed for a signal magnetic field, in a magneto-resistance effect film. CONSTITUTION:A head consists of a magneto-resistance effect film 2 and an insulating layer 4 on a substrate 1 and signal detecting electrodes 3a and 3b connected to the film 2 with through holes 5a and 5b of the insulating layer 4 between them. Connection areas between electrodes 3a and 3b and the film 2 are a part of the film when viewed in the direction perpendicular to the track width. The sense current flows from the through hole 5a and flows in the film 2 and flows out from the through hole 5b. Most of the sense current flows in the area of the shortest distance between holes 5a and 5b. The area where the electric resistance is most changed is included in this area to obtain a large regenerative output value. The value of the current shunt to the outside of the area is smaller according as the track width is narrower. Forms of through holes are so selected that W1
    • 48. 发明专利
    • MAGNETIC HEAD
    • JPH03290812A
    • 1991-12-20
    • JP9030290
    • 1990-04-06
    • HITACHI LTD
    • KOYAMA NAOKITAKANO KOJISHINODA YASUSHIYUHITO ISAMUSHIIKI KAZUO
    • G11B5/39
    • PURPOSE:To obtain an excellent offtrack characteristic and shielding characteristic even with the narrow-track MR head by disposing electrode patterns in such a manner as to decrease the magnetic fluxes crossing the electrode patterns. CONSTITUTION:The MR element 1 is inserted between two shielding patterns 2 and 3 and is thus formed. The electrode patterns 4, 5 are formed at both ends of the MR element 1 and are so formed as to be nearly perpendicular to the surface of a medium 7. Since the magnetic fluxes from adjacent tracks do not cross each other, the deterioration in the offtrack by the induced electromotive force is prevented. The electrode patterns 4, 5 are so disposed as to reduce the area of the loop formed of the electrode patterns 4, 5 drawn out of both ends of a magnetosensitive part and the magnetosensitive part, by which the quantity of the magnetic flux crossing this loop is decreased and the induced electromotive force is decreased. The excellent shielding characteristic and offtrack characteristic are obtd. even with the track MR head in this way.
    • 50. 发明专利
    • MAGNETIC HEAD AND RECORDING AND REPRODUCING DEVICE USING THE SAME
    • JPH0349008A
    • 1991-03-01
    • JP18270689
    • 1989-07-17
    • HITACHI LTD
    • KOYAMA NAOKIYUHITO ISAMUHAMAKAWA YOSHIHIROTAKANO KOJISHIIKI KAZUO
    • G11B5/31
    • PURPOSE:To obtain output with little fluctuation by realizing stable magnetic domain structure by changing film thickness or conductivity of nonmagnetic intermediate layers and controlling the distribution of a current flowing on a multilayer film when controlling magnetic domain structure by permitting the current to flow on the multilayer film compulsorily. CONSTITUTION:In a thin film magnetic head, the multilayer film is formed as a laminate layer of four layers 1-4 via the nonmagnetic intermediate layer by laminating Fe-C(5atm %) that is the crystal material of Fe group and the multilayer of 'Permalloy(R)' sequentially. Cr layers with prescribed thickness is used in intermediate layers 6 and 7 which form first and third layers, and a boron nitride layer with prescribed thickness is used in the nonmagnetic intermediate layer 5 which forms a second layer. Following that, a gap layer 12 is formed, and a coil 13 and a flattening layer 14 are formed. Furthermore, an upper magnetic pole layer 15 is laminated, and electrode layers 8 and 9 are provided at the tip and rear end parts of the magnetic pole, which are brought into contact with respective magnetic pole film. Cu of prescribed thickness is used in the electrode layer. In such a way, it is possible to control the distribution of the current flowing on the multilayer by changing the film thickness or the conductivity of the nonmagnetic intermediate layer.