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41. 发明专利

JPS59215784A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59215784A
公开(公告)日：1984-12-05
申请号：JP8913083
申请日：1983-05-23
申请人： Hitachi Ltd
发明人： KAYANE NAOKI , NAKATSUKA SHINICHI , KAJIMURA TAKASHI , NAKAMURA MICHIHARU , ONO YUUICHI
IPC分类号： H01S5/00 , H01S5/223 , H01S3/18
CPC分类号： H01S5/2231
摘要： PURPOSE:To obtain a stable transverse mode oscillation, which has been difficult through a vapor phase growth method, by depositing first - third semiconductor layers, with due regard to refractive indices and forbidden band width thereof, on a semiconductor substrate to generate a P-N junction, forming a fourth semiconductor layer, a refractive index thereof is considered similarly, on these semiconductor layers while being extended in the progressive direction of laser beams and surrounding the side surface of the fourth semiconductor layer by a fifth semiconductor layer, where a refractive index thereof is specified. CONSTITUTION:A P type Ga1-xAlxAs clad layer 2, an un-doped Ga1-yAlyAs active layer 3 and an N type Ga1-zAlzAs optical guide layer 4 are laminated and grown on a P type GaAs substrate 1. An N type Ga1-wAlwAs clad layer 5 is formed on the layer 4 while being extended in the progressive direction of laser beams, and the layer 5 is surrounded by an N type Ga1-vAlvAs buried layer 6. In the constitution, the refractive index of the layer 3 is set to a value larger than those of the layers 2 and 4 and its forbidden band width to a smaller value, and the refractive index of the layer 5 is made smaller than that of the layer 3 while the refractive index of the layer 6 surrounding the layer 5 is set to a value smaller than that of the layer 5.
摘要翻译：目的：为了获得通过气相生长方法难以稳定的横模振荡，通过在半导体衬底上沉积第一至第三半导体层，同时适当考虑其折射率和禁带宽度，以产生PN结在这些半导体层上形成第四半导体层，其折射率类似地被考虑在激光的行进方向上延伸并且通过第五半导体层围绕第四半导体层的侧表面围绕其第四半导体层的折射率被指定。构成：将AP型Ga1-xAlxAs包覆层2，未掺杂的Ga1-yAlyAs有源层3和N型Ga1-zAlzAs光导层4层叠并生长在P型GaAs衬底1上.N型Ga1-wAlwAs 在层4上形成包层5，同时沿激光的行进方向延伸，并且层5被N型Ga1-vAlAs掩埋层6包围。在该结构中，设置层3的折射率使其大于层2和4的值，其禁带宽度变小，并且层5的折射率小于层3的折射率，而层6周围的折射率 5被设定为小于层5的值。

42. 发明专利

JPS59175181A Semiconductor laser device and manufacture thereof 失效
标题翻译：半导体激光器件及其制造
公开(公告)号：JPS59175181A
公开(公告)日：1984-10-03
申请号：JP4787983
申请日：1983-03-24
申请人： Hitachi Ltd
发明人： KAJIMURA TAKASHI , NAKATSUKA SHINICHI , KAYANE NAOKI , NAKAMURA MICHIHARU , ONO YUUICHI
IPC分类号： H01S5/00 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： PURPOSE:To decrease the threshold current value by enhancing the effect of transverse mode and that of current striction by a method wherein the light absorption layer and the current striction layer of the titled device are successively provided independently. CONSTITUTION:A clad layer 12 is formed on an N type GaAs substrate 11. Next, an active layer 13 is formed, and then a clad layer 14 which shows the reverse conductivity is formed. The current striction layer 16 which shows the same conductivity as the layer 14 is formed. A stripe groove 5 is formed by etching from the layer 16 to a part of the layer 14. The sixth semiconductor layer 17 is formed on the groove 5 and the layer 16. A P type semiconductor layer 18 is formed, and a P-side electrode 19 and an N-side electrode 20 are formed on the layer 18 and the substrate 11. Here, the active layer can be also composed of the superlattice consisting of the super thin film of two or more kind of substances.
摘要翻译：目的：通过增强横模的效果和通过其中独立地依次提供标准装置的光吸收层和当前的粘合层的方法来降低阈值电流值。构成：在N型GaAs衬底11上形成包覆层12.接着，形成有源层13，然后形成显示反向导电性的覆层14。形成显示与层14相同的导电性的当前的粘合层16。通过从层16到层14的一部分的蚀刻形成条纹槽5.第六半导体层17形成在沟槽5和层16上。形成AP型半导体层18，并且形成P侧电极 19和N侧电极20形成在层18和基板11上。这里，活性层也可以由由两种以上物质的超薄膜构成的超晶格构成。

43. 发明专利

JPS59171187A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59171187A
公开(公告)日：1984-09-27
申请号：JP4424383
申请日：1983-03-18
申请人： Hitachi Ltd
发明人： KURODA TAKAROU , KASHIWADA YASUTOSHI , KAJIMURA TAKASHI , KAYANE NAOKI , OOUCHI HIROBUMI
IPC分类号： H01L21/205 , H01L21/203 , H01S5/00 , H01S5/12
CPC分类号： H01S5/1228 , H01S5/1237
摘要： PURPOSE:To enable to manufacture the titled device with good yield at a time of crystal growth by periodically varying the width of the stepwise difference of a stripe active layer in a specific range. CONSTITUTION:A groove or a projection is formed on a semiconductor substrate 1. In this case, the depth of the groove or the height of the projection is set at 0.2-0.5mum and the center value W of the width of the groove or the projection at 2-5mum. Besides, the stripe width is periodically varied in the range of + or -0.2- 0.5mum from the center value along the direction of photo propagation. Such a formation causes the scattering loss the light receives to become extremely large even when the stepwise difference itself is very small, and enables transverse basic mode oscillation stable with the inhibition of high degree mode even when the width (w) is enlarged. Further, the element of excellent performance can be manufactured with good yield by one time crystal growth.
摘要翻译：目的：通过周期性地改变条纹有源层在特定范围内的逐步差异的宽度，能够在晶体生长时以良好的收率制造标题器件。构成：在半导体基板1上形成有槽或突起。在这种情况下，槽的深度或突起的高度设定为0.2〜0.5μm，槽的宽度的中心值W或投影在2-5mum。此外，条带宽度在沿着光传播方向的中心值的+或-0.2-0.5μm的范围内周期性地变化。这样的形成即使当阶梯差本身非常小时也会使光接收的散射损失变得非常大，并且即使当宽度（w）增大时，也能够抑制高度模式而使横向基本模式振荡稳定。此外，可以通过一次晶体生长以良好的产率制造出优异性能的元件。

44. 发明专利

JPS59163821A Liquid phase epitaxial growth 失效
标题翻译：液相外延生长
公开(公告)号：JPS59163821A
公开(公告)日：1984-09-14
申请号：JP3738183
申请日：1983-03-09
申请人： Hitachi Ltd
发明人： KASHIWADA YASUTOSHI , KOUNO TOSHIHIRO , KAJIMURA TAKASHI , KAYANE NAOKI
IPC分类号： H01L21/208 , H01S5/00
CPC分类号： H01L21/02538 , H01L21/02625
摘要： PURPOSE:To facilitate to control concentration of electrons when a III-V group compound semiconductor layer is to be formed by a method wherein the compound of Te and another element is used as the N type impurities of the III-V group compound semiconductor. CONSTITUTION:When a III-V group compound semiconductor is to be manufactured according to liquid phase epitaxial growth, a compositionally uniform compound of Te and another element is used as N type impurities. As the other element, at least one kind of elements to act as N type impurities to exert no adverse effect to the characteristic of the element, or to act as electrically neutral impurities is used. As the element thereof, Al, Ga, In, Si, Sn, Pb, As, Sb, Bi and Se are used. Te is used generally as N type impurities at liquid phase epitaxial growth of the III-V group compound semiconductor, while because the segragation factor of Te is large, the charge quantity thereof becomes extremely small, and precision of weighing is deteriorated. By using the compound of the other impurity and Te, enhancement of weighing precision can be attained.
摘要翻译：目的：为了通过其中使用Te和另一种元素的化合物作为III-V族化合物半导体的N型杂质的方法形成III-V族化合物半导体层，便于控制电子浓度。构成：当根据液相外延生长制造III-V族化合物半导体时，使用组合均匀的Te和另一种元素的化合物作为N型杂质。作为另一种元素，使用作为N型杂质的至少一种元素不会对元件的特性产生不利影响或用作电中性杂质。作为其元素，使用Al，Ga，In，Si，Sn，Pb，As，Sb，Bi和Se。 Te通常在III-V族化合物半导体的液相外延生长中用作N型杂质，而由于Te的分离因子大，其电荷量变得非常小，称重精度降低。通过使用其他杂质和Te的化合物，可以提高称重精度。

45. 发明专利

JPS59145588A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59145588A
公开(公告)日：1984-08-21
申请号：JP1882583
申请日：1983-02-09
申请人： Hitachi Ltd
发明人： SASAKI YOSHIMITSU , KAJIMURA TAKASHI , KAYANE NAOKI , NAKAMURA MICHIHARU
IPC分类号： H01S5/00 , H01S5/028
CPC分类号： H01S5/028
摘要： PURPOSE: To improve the electric and optical characteristics of a semiconductor laser device, and to lengthen life on a high-output operation by coating the light-emitting output end surfaces of the semiconductor laser device so that one side reflects beams to a high degree and the other side reflects them to a low degree.
CONSTITUTION: An end surface on one side is coated with first dielectric film SiO
2 (a refractive index n
1 :1.45) in film thickness of λ/4n
1 , 140nm, by the discharge of Ar gas by using SiO
2 as a target (λ is the oscillation wavelength of a laser). An end surface on the other side is coated with second dielectric film SiO
2 (a refractive index n
2 =1.45) in film thickness of λ/4n
2 , 140nm, through the same method. The target is changed over to Si, Ar gas is discharged under the state in which H
2 gas is mixed into Ar gas by approximately 50% at the ratio of partial pressure, and the second dielectric film SiO
2 is coated with third dielectric film amorphous Si (a refractive index n
3 :3.3) in film thickness of λ/4n
3 , 60nm. Likewise, the third dielectric film amorphous film Si is coated with fourth dielectric film SiO
2 in 140nm and fifth dielectric film amorphous Si in 60nm. The reflectivity of a low reflection film (a first dielectric film) is brought to approximately 7% and that of high reflection films (second ∼ fifth dielectric films) to approximately 90% through said processes, and differential efficiency and a kink level are improved.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：提高半导体激光器件的电气和光学特性，并通过涂覆半导体激光器件的发光输出端面使其高度反射光束并延长高输出操作的寿命，另一方反映了他们的低度。构成：通过使用SiO 2作为靶（λ是振荡的），通过以Ar气体的排出，在一侧的端面上涂覆膜厚度为λ/ 4n1,140nm的第一介电膜SiO 2（折射率n1：1.45）激光的波长）。通过相同的方法，在另一侧的端面上涂覆膜厚度为λ/ 4n2,140nm的第二介电膜SiO 2（折射率n2 = 1.45）。目标转换为Si，Ar气体在H2气体以Ar气体混合的状态下以分压的比例排出大约50％的状态，第二介电膜SiO 2被涂覆有第三绝缘膜非晶Si（折射率n3：3.3），膜厚为λ/ 4n3,60nm。同样地，第四绝缘膜非晶膜Si在140nm的第四绝缘膜SiO 2和60nm的第五绝缘膜非晶Si中被涂覆。通过所述工艺，低反射膜（第一电介质膜）的反射率达到约7％，高反射膜（第二至第五介电膜）的反射率达到约90％，并且提高了微分效率和扭结水平。

46. 发明专利

JPS59130492A Semiconductor laser device and manufacture thereof 失效
标题翻译：半导体激光器件及其制造
公开(公告)号：JPS59130492A
公开(公告)日：1984-07-27
申请号：JP417583
申请日：1983-01-17
申请人： Hitachi Ltd
发明人： KOUNO TOSHIHIRO , OOTOSHI SOU , KAYANE NAOKI , KAJIMURA TAKASHI , NAKAMURA MICHIHARU
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227
CPC分类号： H01S5/32 , H01S5/2081 , H01S5/2275
摘要： PURPOSE:To contrive the stabilization of high output and transverse mode by a method wherein the first and fourth semiconductor layers are set smaller than the second and third semiconductor layers in refractive indices, and the refractive index of the third semiconductor layer is set larger than that of the second semiconductor layer, and the first and forth semiconducltors are so provided as to have conductivity types reverse to those of each, then, the forbidden band widths of the second and forth semiconductor layers are so set as to be larger than that of the third semiconductor layer at the same time. CONSTITUTION:A mesa stripe 12 is formed. At this time, mesa depth is made to reach a GaAs substrate in order to facilitate a burial growth thereafter. An active layer 4 exposed to the side surface of the stripe by selective etching is removed with H3PO4 series etchant, thus forming a cross-sectional structure. Next, the mesa stripe is filled with a P-Ga0.55Al0.45As layer 7 and an N-Ga0.55Al0.45As layer 8 by liquid epitaxial growth, and the selective diffusion 9 or entire surface diffusion of Zn is performed, afterwards ohmic electrodes 10 and 11 are formed.
摘要翻译：目的：通过其中第一和第四半导体层的折射率设定得小于第二和第三半导体层的方法来设计高输出和横向模式的稳定性，并且将第三半导体层的折射率设定为大于并且第一和第二半导体元件被设置为具有与之相反的导电类型，则第二和第二半导体层的禁带宽度被设定为大于第三半导体层。构成：形成台条12。此时，为了便于其后的埋藏生长，使台面深度达到GaAs衬底。通过选择性蚀刻暴露于条纹的侧表面的有源层4用H 3 PO 4系列蚀刻剂除去，从而形成横截面结构。接着，通过液体外延生长，用P-Ga0.55Al0.45As层7和N-Ga0.55Al0.45As层8填充台面条，进行选择扩散9或Zn的整个表面扩散，之后欧姆形成电极10和11。

47. 发明专利

JPH08307010A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH08307010A
公开(公告)日：1996-11-22
申请号：JP9981396
申请日：1996-04-22
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , ONO YUICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE: To prevent a crystal defect caused by crystal growth on a substrate with steps and to prevent an element life decreasing caused by a defect of a growth interface by two times growths, by specifying a direction of stripe ridge part of a clad layer and an angle of the side face with a semiconductor substrate surface. CONSTITUTION: After an n-GaAlAs clad layer 2, an undoped GaAlAs active layer 3, a p-GaAlAs clad layer 4 and a p-GaAs gap layer 8 are grown in order on an n-GaAs substrate 1 by the normal pressure MOCVD method, an SiO2 mask 13 is provided by a normal photolithographic technique, an external part of stripe excluding 0.1-0.3μm of a p-type layer clad is made etching by phosphorus oxide etching liquid and an n-GaAs 9 is again piled by the MOCVD method. Here the angle 14 which the ridge side faces the substrate surface is formed below 100 degree by making the direction of the stripe being [110] direction, by using the method of dry-etching or so on.

48. 发明专利

JPH04196380A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT AND LIGHT EXPOSURE MASK 失效
公开(公告)号：JPH04196380A
公开(公告)日：1992-07-16
申请号：JP32297390
申请日：1990-11-28
申请人： HITACHI LTD
发明人： UCHIDA KENJI , YAMASHITA SHIGEO , NAKATSUKA SHINICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/22
摘要： PURPOSE:To lessen a clad layer in thickness variation on both the sides of a ridge waveguide so as to enable a semiconductor laser element to be uniform in quality and enhanced in yield by a method wherein an opening is provided to the surface of a growth layer so as to reach an active layer after the growth of a crystal of double hetero-structure is finished, and the step of the opening is measured by a film thickness gauge. CONSTITUTION:A second clad layer is partially removed to make an active layer exposed, and the second clad layer by the exposed part is measured in thickness. A second clad layer etching mask is formed on a ridge waveguide forming part, the exposed part, and an evaluation ridge waveguide 12 formed adjacent to the exposed part, and the thickness of the mask is measured. The second clad layer is etched for the formation of a ridge waveguide and an evaluation ridge waveguide layer 12, and a level difference between the surface of the mask on the exposed part and the surface of the evaluation ridge waveguide 12 is measured. Therefore, the ridge waveguide 12 can be formed through the non-destructive direct measurement of the whole surface of a wafer. By this setup, a clad layer can be lessened in thickness dispersion, and a semiconductor laser element of this design can be improved in yield.

49. 发明专利

JPH0484482A SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH0484482A
公开(公告)日：1992-03-17
申请号：JP19803890
申请日：1990-07-27
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , MINAGAWA SHIGEKAZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To get high output properties by relatively decreasing the carrier concentration at the vicinity on the side where a second waveguide layer contacts with an active layer and relatively increasing the carrier concentration at the vicinity on the reverse side. CONSTITUTION:On a substrate 1 are stacked a buffer layer 2, a light waveguide layer 3, an active layer 4, a light waveguide layer 5, an etch stop layer 6, a waveguide layer 7, and a cap layer 8. For the light waveguide layer 5, the p-type impurities concentration is set so that the carrier concentration may be 1-10 cm usually, and for the light waveguide layer 7, p-type impurity concentration is increased relatively and is set so that the carrier concentration may be high at 5X10 -10 cm . The impurities diffuse from the light waveguide layer 7 to the active layer 4, and by the concentration of these diffused impurities, ordered array structure occurring in the undoped layer 4 vanishes. Therefore, in this part, the band gap of the active layer comes to show the value in the case of disordered array structure. Moreover, by using quantum well structure for the active layer, the band gap difference with the inside becomes large.

50. 发明专利

JPH0443691A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0443691A
公开(公告)日：1992-02-13
申请号：JP14999690
申请日：1990-06-11
申请人： HITACHI LTD
发明人： KAJIMURA TAKASHI , TANAKA TOSHIAKI
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To lower a series resistance and to execute a high-output and high- reliability operation and a short-wavelength and high-reliability operation by a method wherein the stripe direction composed mainly of a p-type AlGaInP clad layer is set to a orientation and a ridge structure is formed as a so-called inverted mesa structure or as a rectangular ridge. CONSTITUTION:An n-type (Al0.7Ga0.3)0.5In0.5P clad layer 2, an undoped Ga0.5In0.5P active layer 3 and a p-type (Al0.7Ga0.3)0.5-In0.5P clad layer 4 are grown continuously on an n-type GaAs (100)-plane substrate 1. After that, a CVD film is formed; after that, a wafer is divided into two; a photoresist process is executed; a stripe in a orientation is formed in one divided wafer; a stripe in a orientation is formed in the residual wafer. After that, an etching operation is executed; a ridge stripe of an inverted mesa structure and a ridge stripe of a forward mesa structure are formed; the width on the side of the active layer 3 or the ridge is set at about 5 mum for both structures; the thickness in a thin region of the ridge is set at about 0.3 mum.

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