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31. 发明专利

JPH03117021A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH03117021A
公开(公告)日：1991-05-17
申请号：JP25430389
申请日：1989-09-28
申请人： NEC CORP
发明人： YAMAGISHI HIDETAKA
IPC分类号： H01L29/73 , H01L21/331 , H03K17/04 , H03K19/088
摘要： PURPOSE:To reduce the cost of manufacture by using a PNP bipolar transistor in a switching circuit but not using a Schottky diode to prevent a NPN transistor from falling into a saturated state. CONSTITUTION:The base of an NPN bipolar transistor 1 is connected with the emitter of a PNP bipolar transistor 2 and the emitter of the NPN bipolar transistor is connected with the collector of the PNP bipolar transistor 2. Then, the base of the PNP bipolar transistor 2 is connected to a reference voltage line 3. Thus, the Schottky diode is not required besides the bipolar transistors 1 and 2, a manufacture process necessary for forming a semiconductor integrated circuit is reduced and the manufacture cost can be reduced.

32. 发明专利

JPH0369211A LOGIC CIRCUIT 失效
公开(公告)号：JPH0369211A
公开(公告)日：1991-03-25
申请号：JP20619289
申请日：1989-08-08
申请人： NIPPON ELECTRIC IC MICROCOMPUT
发明人： YAMADA HIDEAKI
IPC分类号： H03K19/088 , H03K17/04 , H03K17/56 , H03K17/567 , H03K19/08
摘要： PURPOSE:To prevent delay of the transition time of an output signal by providing a field effect transistor whose source-drain path is connected between a second power supply terminal and the output terminal, to which gate terminal a logic signal with a phase reverse to the logic level of an output terminal is impressed. CONSTITUTION:The source of a P channel MOS field effect transistor Q5, is connected to the power supply terminal 3, the drain is connected to the output terminal 4, the back gate is connected to the power supply terminal 3 and the gate terminal is connected to a logic signal in a step preceding to a phase division transistor Q1 which logic phase is reverse to the output. When the level of the output terminal 4 is 'L', a level 'H' is impressed to the gate input terminal of the P-MOS transistor Q5. In such a state, when the signal of 'H' to 'L' is inputted to the base of the phase division transistor Q1, namely, to the input terminal, the level of the collector is changed from 'L' to 'H'. At such a time, even when the potential of the output terminal 4 is close to VOH, the output potential is increased to a power supply voltage VCC as shown by (b) by a P-MOS transistor Q3. Accordingly, a logic circuit can arrive at a potential close to the VOH earlier than a conventional circuit by delta (t).

33. 发明专利

JPH0362726A TTL CIRCUIT 失效
公开(公告)号：JPH0362726A
公开(公告)日：1991-03-18
申请号：JP19896689
申请日：1989-07-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUZAWA AKIRA , TADEHARA KENICHI
IPC分类号： H03K19/088
摘要： PURPOSE:To obtain a TTL circuit at high speed with low power by providing a 4th transistor(TR) whose base and emitter are connected in parallel with those of a 3rd TR for driving TRs being components of a totem pole circuit, and connecting the collector to a power supply terminal via a load means. CONSTITUTION:A 4th TR 11 whose emitter and base are shared with those of a 3rd TR 8 and whose collector connects to a power supply terminal via a 2nd load means is provided. Thus, driving capability or time constants of 1st and 2nd TRs 2, 3 whose each collector is connected to an output terminal 1 and a power supply terminal 5, respectively, and whose each emitter is connected to ground and to the output terminal 1 being components of a totem pole circuit regulating the rising of an output voltage is set independently, respectively. Thus, a TTL circuit with low power at fast speed is obtained.

34. 发明专利

JPH0329417A TTL LOGIC GATE 失效
公开(公告)号：JPH0329417A
公开(公告)日：1991-02-07
申请号：JP16351689
申请日：1989-06-26
申请人： NEC CORP
发明人： AKIBA ICHIRO
IPC分类号： H03K19/088 , H03K19/013
摘要： PURPOSE:To reduce the propagation delay time and to quicken the switching by connecting a 3rd bipolar transistor(TR) between a source of a 2nd bipolar TR and a 2nd power supply. CONSTITUTION:A 3rd bipolar TR 12 connects between a 2nd TR 10 and a 2nd power supply, the 3rd bipolar TR 12 is turned on when an input signal changes from a high level to a low level thereby discharging the charge charged in a mirror capacitance of the 2nd bipolar TR 10. Moreover, a Schottky barrier diode(SBD) 13 is provided between an emitter of a 1st stage bipolar TR and a collector of the 1st bipolar TR 2, and the charge charged in the mirror capacitance of the TRs of the next-stage in Darlington connection is discharged when the input changes from a high level to a low level. Thus, the propagation delay time is reduced and the switching is quickened.

35. 发明专利

JPH02301217A INTERFACE CIRCUIT 失效
公开(公告)号：JPH02301217A
公开(公告)日：1990-12-13
申请号：JP12220989
申请日：1989-05-15
申请人： HITACHI LTD
发明人： SATO KOICHI
IPC分类号： H03K19/088 , H03K19/0175
摘要： PURPOSE:To use two kinds of interface circuits with switching by forming an output circuit with a couple of switching elements connected in series between a power level and a reference level and bypassing a driving signal of the switching element at the power level side toward the reference level with an external signal. CONSTITUTION:A final stage output circuit 1 consists of a couple of transistors(TRs) Q1 and Q2 driven complementarily and connected in series between a power level and a reference level and a transmission control circuit 4 bypassing only an ON/OFF driving signal of the TR Q1 connecting to the power level side toward the reference level side selectively in response to the signal given externally is provided. Thus, two kinds of interface circuits are used switchingly for a current output type circuit applying current source and a switch output type circuit with only current sink by means of one kind of the circuit, then the degree of freedom of the constitution of the external load circuit is extended to enhance the general-purpose performance of the semiconductor integrated circuit device.

36. 发明专利

JPH02298067A COLLECTOR CLAMP CIRCUIT 失效
公开(公告)号：JPH02298067A
公开(公告)日：1990-12-10
申请号：JP11887989
申请日：1989-05-12
申请人： NEC CORP
发明人： YAMADA KAZUMI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L27/082 , H03K19/088
摘要： PURPOSE:To cut a process and to reduce a cost by forming a clamp circuit by combining a Shchottky barrier diode of a low forward voltage using titanium silicide with a P-N junction diode. CONSTITUTION:A cathode of a P-N junction diode Di is connected to a collector of an N-P-N bipolar transistor Q, and a cathode of a Schottky barrier diode Ds using a titanium silicide is connected to a base. Anodes of both diodes are mutually connected. In the circuit, a base current of a transistor Q is made to flow through the Ds. As this time, an anode potential of the Ds is a sum VBE+VS of a base-to-emitter forward voltage VBE and a forward voltage VS of the Ds. Meanwhile, a collector-to-emitter voltage VCE is provided by an equation I since it is lower than the anode potential by an forward voltage VF of the Di. Here, both VF and VBE are 0.7 to 0.8V, and VCE=VS. Since Ds is formed by titanium silicide, VS is 0.2 to 0.3V. Therefore, VCE is clamped to 0.2 to 0.3V. Thereby, it is possible to satisfy both saturation preventing conditions and voltage specification of a TTL circuit simultaneously.

37. 发明专利

JPH02278917A NON-CURRENT HOGGING DOUBLE PHASE DIVIDER TTL CIRCUIT 失效
公开(公告)号：JPH02278917A
公开(公告)日：1990-11-15
申请号：JP5287590
申请日：1990-03-06
申请人： NAT SEMICONDUCTOR CORP
发明人： RAASU JIYANSON
IPC分类号： H03K3/286 , H03K3/288 , H03K19/003 , H03K19/088
摘要： PURPOSE: To obtain the circuit provided with dual transistor(TR) elements in a current mirror form without a current hogging by providing a low impedance current source active TR element coupled in an emitter follower form to one collector node of the dual TR elements. CONSTITUTION: Dual phase splitter TR elements Q5, Q51 are connected by a current mirror form. A low impedance current source TR element Q40 coupled with a collector node of the dual phase splitter TR element Q51 in an emitter follower form supplies a compensation collector current in a collector circuit branch 30 and the current is changed inversely with respect to a change in a collector current Ic in a collector circuit branch part 20. As a result, the emitter current density from emitters of the current mirror TR elements Q5, Q51 is made equal to each other. Thus, a current hogging between the dual TRs coupled in the current mirror form is avoided.

38. 发明专利

JPH0249574B2 失效
公开(公告)号：JPH0249574B2
公开(公告)日：1990-10-30
申请号：JP3697581
申请日：1981-03-13
申请人： NIPPON ELECTRIC CO
发明人： MORI SUSUMU
IPC分类号： H03K19/088 , H03K19/003 , H03K19/20

39. 发明专利

JPH02243016A BIPOLAR LOGIC CIRCUIT 失效
公开(公告)号：JPH02243016A
公开(公告)日：1990-09-27
申请号：JP6520789
申请日：1989-03-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： MANO JUNJI
IPC分类号： H03K19/088 , H03K19/0175
摘要： PURPOSE:To form a stable high impedance state even when a negative voltage is applied to an output terminal by connecting a Schottky diode to collectors of 1st and 2nd transistors(TRs). CONSTITUTION:When an output control signal line 4 is brought into an H level, a base level of a 6th TR 19 is lowered and goes to nonconductive. Thus, a current mirror circuit comprising 7th, 8th TRs 21, 22 is nonconductive, and an output terminal 3 reaches a high impedance state. Since Schottky diodes 16, 17 connect respectively to collectors of the TRs 5, 6, even when a negative voltage is applied to the terminal 3, a stable high impedance state is attained.

40. 发明专利

JPH02171021A LOGIC CIRCUIT 失效
公开(公告)号：JPH02171021A
公开(公告)日：1990-07-02
申请号：JP32668188
申请日：1988-12-23
申请人： FUJITSU LTD
发明人： YOSHIKAWA HIROSHI
IPC分类号： H03K19/003 , H03K19/086 , H03K19/088 , H03K19/094 , H03K19/0952
摘要： PURPOSE:To avoid the deterioration in the yield of components by making a switching element being a cause to a software error and its peripheral element only redundant and applying wired-OR connection to outputs of drive elements being the result of making the drive element and its peripheral element redundant accordingly and obtaining an output. CONSTITUTION:An output common emitter amplifier including a switching element being a cause to a software error is made redundant by using two TRs 6a, 6b and resistors 6d, 6e. A drive stage 7 is made redundant by using parallel TRs 7a, 7b corresponding to the switching stage 6 made redundant and the emitter follower outputs are in wired-OR connection and the output is sent to the output terminal 5. Even when any of TRs 6a, 6b is turned on in a pseudo way, no software error is caused. Since only the TRs 6a, 6b, the resistors 6d, 6e and the TRs 7a, 7b are made redundant in the entire circuit, number of increase in the clements is less and the deterioration in the yield attended therewith is avoided.

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