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    • 34. 发明专利
    • 放射線撮像装置および放射線撮像表示システム
    • 辐射成像装置和放射成像显示系统
    • JP2014240769A
    • 2014-12-25
    • JP2013122642
    • 2013-06-11
    • ソニー株式会社Sony Corp
    • FUJIMURA TAKASHI
    • G01T7/00G01T1/20G01T1/24
    • H01L27/14612H01L27/14623H01L27/14659H01L27/14661H01L27/14663
    • 【課題】トランジスタの特性劣化を抑制して高信頼性を実現することが可能な放射線撮像装置を提供する。【解決手段】放射線撮像装置は、放射線に基づいて信号電荷を発生する複数の画素と、信号電荷を読み出すためのトランジスタを含む第1基板と、第1基板と対向配置された第2基板と、第1基板と第2基板との間に、画素毎に設けられ、放射線を他の波長または電気信号に変換する変換層と、第1基板と第2基板との間において変換層を画素毎に分離する隔壁と、隔壁に対向して設けられた放射線遮蔽層とを備えたものである。【選択図】図3
    • 要解决的问题:提供能够通过抑制晶体管的性能劣化而实现高可靠性的放射线摄像装置。解决方案:放射线成像装置包括:多个像素,被配置为根据辐射产生信号电荷; 第一衬底,包括被配置为读出信号电荷的晶体管; 设置成面对第一基板的第二基板; 设置在第一基板和第二基板之间的转换层,为每个像素提供,并且被配置为将辐射转换成另一波长或电信号; 设置在所述第一基板和所述第二基板之间的隔板,以分隔所述像素中的每一个的所述转换层; 以及设置成面向隔板的辐射屏蔽层。
    • 36. 发明专利
    • Connection board
    • 连接板
    • JP2011226817A
    • 2011-11-10
    • JP2010094234
    • 2010-04-15
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • TOKURA FUMIYUKISUGITANI MITSUTOSHISUZUKI SHIGERUTONBE TAKASHI
    • G01T1/20H01L31/09H05K1/02H05K3/46
    • G01T1/2018H01L27/14623H01L27/14634H01L27/14661H01L27/14663H05K1/0218H05K1/0242H05K1/025H05K1/113H05K2201/09727H05K2201/10545H05K2201/10674
    • PROBLEM TO BE SOLVED: To provide a connection board for a radiation detector module, which is capable of protecting a readout circuit of an integrated circuit device from radiation and suppressing a parasitic capacitance in the readout circuit.SOLUTION: A connection board 13 includes a base material 130 composed by laminating a plurality of dielectric layers 130a to 130f, and a plurality of penetrating conductors 20 provided so as to penetrate the dielectric layers 130c to 130f disposed adjacent to each other. A plurality of radiation shielding films 21a to 23a are formed in two or more interlayer portions of the dielectric layers 130c to 130f, the radiation shielding films being integrally formed with respective penetrating conductors 20 and having spaces therebetween. A region PR1, which is a projection of the radiation shielding film 21a (21b) integrally formed with one penetrating conductor 20 in one interlayer portion to a virtual plane perpendicular to a predetermined direction, and a region, which is a projection of the radiation shielding film 22b or 22c (22c) formed integrally with other penetration conductor 20 in other interlayer portion to a virtual plane, do not overlap with each other.
    • 要解决的问题:提供一种用于辐射检测器模块的连接板,其能够保护集成电路器件的读出电路免受辐射并且抑制读出电路中的寄生电容。 解决方案:连接板13包括通过层叠多个电介质层130a至130f而构成的基底材料130以及设置成穿过彼此相邻布置的电介质层130c至130f的多个穿透导体20。 多个辐射屏蔽膜21a至23a形成在电介质层130c至130f的两个或更多层间部分中,辐射屏蔽膜与各个穿透导体20一体地形成并且在其间具有间隔。 作为与一个中间部分中的一个贯通导体20一体形成的与预定方向垂直的虚拟平面的辐射屏蔽膜21a(21b)的突起的区域PR1和作为辐射屏蔽的投影的区域 与其他夹层部分中的其他穿透导体20整体形成为虚拟平面的膜22b或22c(22c)彼此不重叠。 版权所有(C)2012,JPO&INPIT
    • 38. 发明专利
    • Semiconductor photodetecting element and radiation detector
    • 半导体光电元件和辐射探测器
    • JP2011159984A
    • 2011-08-18
    • JP2011059327
    • 2011-03-17
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • YAMANAKA TATSUMI
    • H01L27/146G01T1/20H01L27/14H01L27/144H01L27/148H01L31/06H01L31/10
    • G01T1/2018G01T1/2006H01L27/1446H01L27/1463H01L27/1464H01L27/14661H01L31/118
    • PROBLEM TO BE SOLVED: To provide a semiconductor photodetecting element and a radiation detector which can favorably suppress the occurrence of crosstalk. SOLUTION: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. An electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11 are formed on the front side of the n-type semiconductor substrate 5. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供可以有利地抑制串扰的发生的半导体光电检测元件和辐射检测器。 解决方案:在n型半导体衬底5的正面上,p型区域7被二维排列成阵列。 在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。 通过从基板5的正面侧扩散n型杂质,以从正面看,包围p型区域7,形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成,以便包围从正面观察的p型区域7和高浓度n型区域9。 电连接到p型区域7的电极15和与高浓度n型区域9和p型区域11电连接的电极19形成在n型半导体衬底5的正面上。 版权所有(C)2011,JPO&INPIT