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    • 35. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH02215138A
    • 1990-08-28
    • JP3720789
    • 1989-02-15
    • TOSHIBA CORP
    • ASAI HIRONORISUGIURA YASUYUKI
    • H01L21/60
    • PURPOSE:To improve the heat dissipation property and transient heat characteristics of the title device and to prevent a wire bonding failure from generating in the device by a method wherein a recessed part is provided in a ceramic substrate and a semiconductor element and an intermediate conductive layer for connection with an external device are respectively provided on the recessed part and the protruding part of the substrate. CONSTITUTION:A semiconductor element 3 is provided on a thin-walled part 1a of a recessed part of a ceramic substrate 1 and heat which is generated from the element 3 is dissipated through the part 1a. Moreover, a heat capacity at a transient time is secured by a thickwalled part 1b of a protruding part of the substrate 1. Moreover, an intermediate conductive layer 2 for connection with an external device is provided on the surface of the part 1b and bonding wires 4 and 5 can be made short. By this constitution, the heat dissipation property and transient heat characteristics of a device are improved and the device becomes a highly reliable semiconductor device, in which a wire bonding failure is hardly generated.
    • 37. 发明专利
    • CERAMIC SUBSTRATE FOR SEMICONDUCTOR DEVICE
    • JPH01255230A
    • 1989-10-12
    • JP8357088
    • 1988-04-05
    • TOSHIBA CORP
    • ASAI HIRONORI
    • H01L21/52
    • PURPOSE:To correct the dispersion in heat characteristics of a semicondutor device, to prevent separation of a semiconductor chip and to obtain the semiconductor device whose quality is improved, by forming a groove at the peripheral part of a position on which a semiconductor chip is mounted on a ceramic substrate. CONSTITUTION:A semiconductor chip 7 is mounted on a ceramic substrate 1. A groove 3 is formed at the peripheral part of a position 2 on which the semiconductor chip 7 is mounted on the ceramic substrate 1. It is desirable that the depth of said groove is 50mum or less and the width is about 0.01-0.3mm. For example, the groove 5 of a rectangular pattern of 1.2X2.5mm is formed with condensed laser light on the AlN substrate 1. Then, metallizing paste comprising Mo-Ti nitride, Ti oxide, Co oxide and Ni is applied on the substrate 1. The metallized layer 4 is formed by heat treatment. A plated layer 5 and a solder layer 6 are formed on the surface of the metallized substrate obtained in this way. The Si chip 7 is mounted on the specified position through the solder layer 6.
    • 40. 发明专利
    • COMPOSITE BOARD AND MANUFACTURE THEREOF
    • JP2000277663A
    • 2000-10-06
    • JP8299699
    • 1999-03-26
    • TOSHIBA CORP
    • IYOGI YASUSHIASAI HIRONORI
    • H05K1/03C04B37/02H01L23/13H01L23/15H05K1/09H05K3/20
    • PROBLEM TO BE SOLVED: To prevent the adhesive strength of a ceramic board to a circuit board from deteriorating in a thermal cycle test by a method wherein the ratio of number of oxygen atoms to that of carbon atoms is set above a specific value on the surface of the ceramic board that is bonded to the circuit board. SOLUTION: An oxide layer 5 is formed on the surface of a ceramic board 2a, a circuit board 3 is bonded on the surface of the board 2a integrally, and a rear copper board 4 is bonded on the rear of the board 2a for the formation of a composite board 1a. When the composite board 1a is fabricated, the surface of the ceramic board 2a is previously cleaned with alkali to be enhanced in surface roughness. At the same time, the ratio of number of oxygen atoms to that of carbon atoms on the surface of the ceramic board 2a is set above 0.9. Thereafter, the circuit board 3 is bonded on the surface of the ceramic board 2a integrally. Therefore, the ceramic board 2a is enhanced in adhesion to the circuit board 3 and prevented from deteriorating in adhesion even after a thermal cycle test, and the circuit board 3 is prevented from bulging or being separated.