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31. 发明专利

JPS6033292A PREPARATION OF SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS6033292A
公开(公告)日：1985-02-20
申请号：JP13925383
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , WATANABE MASAHARU
IPC分类号： C30B15/00 , C30B15/30 , H01L21/02 , H01L21/208
摘要： PURPOSE:To prepare a single crystal semiconductor having low oxygen concn. and low concn. of impurity and high purity by rotating a means for impressing magnetic field to molten starting material for a semiconductor in a crucible supported freely rotatably by rotating the means synchronously with the rotation of the crucible. CONSTITUTION:Two electromagnets 11, 12 are provided to both the sides of a crucible 4 on the outside periphery of a chamber 1 arranging to confront the N pole to the S pole and impressing a magnetic field in the horizontal direction to the molten silicon 9 in the crucible 4. These electromagnets 11, 12 are constructed to be mechanically or electrically rotatable synchronously with the rotation of the crucible 4 around the chamber 1. Magnetic field in the horizontal direction is impressed to the molten silicon 9 in the crucible 4 by passing approximately DC current through a heater 5 and electromagnet 11, 12 using the pulling device and the electromagnets 11, 12 are rorated synchronously with the rotation of the crucible 4. Single crystal silicon 10 is pulled up by pulling up a chain 7 in this state.

32. 发明专利

JP2572051B2 失效
公开(公告)号：JP2572051B2
公开(公告)日：1997-01-16
申请号：JP28837286
申请日：1986-12-03
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , YAMATO MITSUHIRO , KASHIMA KAZUHIKO , TAJI HIDEKAZU
IPC分类号： H01L21/322 , H01L21/205 , H01L21/26 , H01L21/261

33. 发明专利

JPH0825835B2 失效
公开(公告)号：JPH0825835B2
公开(公告)日：1996-03-13
申请号：JP23358888
申请日：1988-09-20
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , NISHIKAWA CHIHIRO , TSUJI RYUICHI , OSANAI JUNICHI
IPC分类号： C30B15/12 , C30B30/04 , H01L21/208

34. 发明专利

JPH0573720B2 失效
公开(公告)号：JPH0573720B2
公开(公告)日：1993-10-14
申请号：JP17724285
申请日：1985-08-12
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , TAMURA MASAYUKI
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10 , H01L21/18 , H01L21/208

35. 发明专利

JPH03279289A CARBON CRUCIBLE FOR PRODUCING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH03279289A
公开(公告)日：1991-12-10
申请号：JP7895290
申请日：1990-03-29
申请人： TOSHIBA CERAMICS CO
发明人： KUSAKA HITOSHI , YAMATO MITSUHIRO
IPC分类号： C30B15/10 , C30B29/06
摘要： PURPOSE:To improve the temperature controllability of melted silicon and provide a practical durability by disposing many depressions on the outside surface of a carbon crucible. CONSTITUTION:A carbon crucible having many depressions on the outside surface thereof and employed for producing silicon single crystals. The depressions are preferably disposed on the side surface of the carbon crucible by the dimple processing using a NC processing machine. The wall thickness of the crucible at the lowest portion of the depression is preferably set to >=1/2 of the wall thickness of the crucible. When the wall thickness is

36. 发明专利

JPH0337185A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPH0337185A
公开(公告)日：1991-02-18
申请号：JP17146889
申请日：1989-07-03
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO
IPC分类号： C30B15/14 , C30B27/02 , H01L21/208
摘要： PURPOSE:To flatten exothermic distribution at the lower end of a heater and enlarge the caliber of a single crystal by providing one end of a cylindrical heating part coaxially surrounding crucibles with a dislike shielding part for shielding the crucible bottom in an apparatus for producing a single crystal according to the Czochralski method. CONSTITUTION:An apparatus for producing a single crystal is provided with a cylindrical heating part 1 coaxially surrounding crucibles (a carbon crucible 2 and a quartz glass crucible 3) and a disklike shielding part 4, integral or integrally mounted on one end of the heating part 1 and shielding the bottom of the crucibles. When the shielding part is of the type 4', the exothermic distribution at the lower end of the heater can be more flattened than that of the type 4.

37. 发明专利

JPH0283294A PULLING UP APPARATUS FOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0283294A
公开(公告)日：1990-03-23
申请号：JP23358788
申请日：1988-09-20
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , NISHIKAWA CHIHIRO , TSUJI RYUICHI
IPC分类号： C30B15/12 , H01L21/208
摘要： PURPOSE:To provide a pulling up apparatus for single crystal capable of growing a long single crystal while suppressing the growth of polycrystals from the inner wall of an inner crucible at the latter half of the single crystal growth stage by using a double crucible and forming an inner wall of the outer crucible in the form of a top-opening tapered shape. CONSTITUTION:The above single crystal pulling up apparatus 1 is provided with a vacuum vessel 19 containing a double crucible composed of an outer crucible 9 and an inner crucible 11. The outer crucible 9 is composed of a quartz crucible 10 and a graphite crucible 12 supporting the quartz crucible. The inner wall of the outer crucible 9 has tapered form widening upward. A heater 14 made of graphite is placed to the outside of the double crucible and a heat-insulation cylinder 16 made of e.g., a porous SiC is positioned outside of the heater. Si was charged into the double crucible and an Si single crystal was pulled up. As a comparative example, a single crystal was pulled up using conventional double crucible (the outer crucible has straight wall). Excellent results were obtained on the yield of the Si single crystal and the growth rate of the crystal in the example of the present process compared with those of the comparative example.

38. 发明专利

JPH026382A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH026382A
公开(公告)日：1990-01-10
申请号：JP14369388
申请日：1988-06-13
申请人： TOSHIBA CERAMICS CO
发明人： ITO HIROMI , YAMATO MITSUHIRO , NISHIKAWA CHIHIRO , TSUJI RYUICHI
IPC分类号： C30B15/14 , C30B15/12 , C30B30/04 , H01L21/208
摘要： PURPOSE:To make it possible to efficiently obtain a single crystal having a low oxygen concentration and homogeneous resistivity by providing a sub-heater above an inner crucible in an apparatus for pulling up the single crystal according to a double crucible method combined with a magnetostatic field applied Czochralski (MCZ) method. CONSTITUTION:A double crucible consisting of an inner crucible 22 and an outer crucible 21 and a heater 34 are provided in the interior of a vacuum vessel 27 and a sub-heater 34 for heating the inner crucible 22 is provided above the inner crucible 22. A magnet 11 is arranged on the outside of the vacuum vessel 27 and a strong static magnetic field is applied to a silicon melt 23 in the double crucible to pull up and grow a single crystal 23' while suppressing stirring of the silicon melt 23 by thermal convection, pull up and grow the single crystal 23'. Thereby, the upper part of the inner crucible 22 is heated by the subheater 34 to conduct the heat to the lower part of the inner crucible 22 and heat the silicon melt 23. As a result, a suitable temperature difference is produced in the inner radial direction of the silicon melt 23 in the inner crucible 22 and a polycrystal is hardly deposited even if the pulling up rate is increased.

39. 发明专利

JPS6483591A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS6483591A
公开(公告)日：1989-03-29
申请号：JP24020787
申请日：1987-09-25
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , YAMATO MITSUHIRO , HIGUCHI TAKAYOSHI , TAJI HIDEKAZU
IPC分类号： C30B29/06 , C30B15/02 , H01L21/18
摘要： PURPOSE:To obtain a single crystal having a homogeneous distribution of an impurity concentration in the longitudinal direction, by applying a magnetic field to a melt and simultaneously feeding a fine granular crystalline substance without containing an additive to a liquid surface of the melt by a given rate per unit time in pulling up and growing the single crystal from the melt of an impurity-containing crystalline component. CONSTITUTION:A means 5 for applying a magnetic field is provided on the outer periphery of a heater 4 for heating a crucible 3. A single crystal 7 is pulled up and grown from a melt 1 of an impurity-containing crystalline component filled in the crucible 3. In the process, a magnetic field is applied to the melt 1 by the means 5 for applying the magnetic field and a magnetic viscous force is imparted to the melt 1. Furthermore, a fine granular crystalline substance 14 without containing an additive is fed from a feeding means 16 to the surface of the melt 1 and a single crystal 7 is pulled up and grown while controlling the feed rate (Fa) of the crystalline substance 14 per unit time so as to satisfy condition expressed by the formula (Fp is the amount of the crystallized single crystal 7 per unit time; Ke is the impurity segregation coefficient of the impurity for the melt 1).

40. 发明专利

JPS63297291A DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS63297291A
公开(公告)日：1988-12-05
申请号：JP13163087
申请日：1987-05-29
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06
摘要： PURPOSE:To surely fix a heater and eliminate a breakage accident thereof, by partially engaging the heater with grooves provided in clamps with wedges and pressing the wedges with wedge pressing jigs thereon. CONSTITUTION:Two parts prepared by partially cutting the bottom of a heater 6 are engaged with grooves provided on the top surfaces of clamps 7 and 7 placed between electrode mounting parts of the heater 6 and fixed with wedges 16 and 16, which are then pressed thereon with wedge pressing jigs 17 and 17 mounted on the top surfaces of the clamps 7 and 7 with bolts 18 and 18.

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