专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPH11340191A WET ETCHING DEVICE FOR SILICON SUBSTRATE 失效
公开(公告)号：JPH11340191A
公开(公告)日：1999-12-10
申请号：JP14626498
申请日：1998-05-27
申请人： TOPPAN PRINTING CO LTD
发明人： EGUCHI HIDEYUKI , KONISHI TOSHIO , SASAKI HIRONOBU
IPC分类号： C23F1/08 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a wet etching device for silicon substrate for preparing a high-quality silicon transfer mask with high production yield while hardly sticking dirt at the time of wet etching to a silicon substrate. SOLUTION: A silicon substrate 60, with which a transfer mask pattern is formed on one side and a resist pattern is formed on the other side, is set to a silicon substrate holding part 31 of a supporting stand 30 while turning the resist pattern side upward and temporarily fixed by abutting an intermediate plate 20, a lid 10 is screwed onto the supporting stand 30 and the silicon substrate 60 is fixed. Further, a wet etching device 10, to which the silicon substrate 60 is set, is dipped in a KOH solution heated at 70 deg.C, anisotropic etching is performed to the monocrystalline silicon wafer of the silicon substrate 60 with the resist pattern as a mask, a transfer pattern opening part and a transfer pattern separate opening part are formed and the silicon transfer mask is provided.

32. 发明专利

JP2009188247A Soi substrate for stencil mask, stencil mask blanks, stencil mask, method of manufacturing stencil mask, and pattern exposure method using stencil mask 审中-公开
标题翻译：用于横截面掩模的SOI衬底，横截面掩模，STENCIL掩模，制造横截面掩模的方法和使用横截面掩模的图案曝光方法
公开(公告)号：JP2009188247A
公开(公告)日：2009-08-20
申请号：JP2008027691
申请日：2008-02-07
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide: an SOI substrate for a stencil mask, which causes no reduction of a yield of the stencil mask and no particle defect; a stencil mask blanks; the stencil mask; a method of manufacturing the stencil mask; and a pattern exposure method using the stencil mask. SOLUTION: The SOI substrate for a stencil mask includes: a silicon carrier substrate layer; an intermediate oxide film layer formed on the silicon carrier substrate layer; and a silicon single crystalline layer having an impurity diffusion layer formed on the intermediate oxide film layer. The impurity diffusion layer has a resistivity of ≥0.0001 Ωcm and ≤1 Ωcm. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供：用于模版掩模的SOI衬底，其不会降低模板掩模的产量，并且不产生颗粒缺陷; 模板面具坯料; 模板面膜; 一种制造模板掩模的方法; 以及使用该模板掩模的图案曝光方法。解决方案：用于模板掩模的SOI衬底包括：硅载体衬底层; 形成在所述硅载体基板层上的中间氧化膜层; 以及在中间氧化膜层上形成有杂质扩散层的硅单晶层。杂质扩散层的电阻率为≥0.0001Ωcm，≤1Ωcm。版权所有（C）2009，JPO＆INPIT

33. 发明专利

JP2009088147A Stencil mask and its manufacturing method 审中-公开
标题翻译：横断面及其制造方法
公开(公告)号：JP2009088147A
公开(公告)日：2009-04-23
申请号：JP2007254507
申请日：2007-09-28
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI
IPC分类号： H01L21/266 , G03F1/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask having high strength and heat resistance and superior machining accuracy, and to provide its manufacturing method. SOLUTION: The manufacturing method comprises a step of forming a stencil pattern on a first thin film layer while forming an alignment pattern on the outer periphery of a stencil pattern arrangement region, the alignment pattern formed on the first thin film layer being in an outer periphery region beyond a region where a second thin film layer is pasted, a step of using a plurality of alignment patterns for pasting the second thin film layer on the surface of the first thin film layer, a step of forming resist on the surface of the second thin film layer, and a step of using the alignment patterns for positioning the stencil pattern and using stencil pattern data for the first thin film layer for drawing it superposed on the resist face of the second thin film layer so that an opening pattern in the same shape as the stencil pattern of the first thin film layer is superposed on the same position as the position of the stencil pattern of the first thin film layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有高强度和耐热性以及优异的加工精度的模板掩模，并提供其制造方法。解决方案：制造方法包括在第一薄膜层上形成模板图案，同时在模版图案布置区域的外周形成对准图案的步骤，形成在第一薄膜层上的对准图案在超过第二薄膜层的区域以外的外周区域，使用多个取向图案将第二薄膜层粘贴在第一薄膜层的表面上的步骤，在表面上形成抗蚀剂的工序的第二薄膜层，以及使用对准图案来定位模板图案并使用模板图案数据作为第一薄膜层的步骤，以将其叠加在第二薄膜层的抗蚀面上，使得开口图案以与第一薄膜层的模板图案重叠在与第一薄膜层的模板图案的位置相同的位置上的相同形状。版权所有（C）2009，JPO＆INPIT

34. 发明专利

JP2008147546A Stencil mask 审中-公开
标题翻译： STENCIL MASK
公开(公告)号：JP2008147546A
公开(公告)日：2008-06-26
申请号：JP2006335521
申请日：2006-12-13
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20 , H01L21/266
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask capable of arranging a complementary division pattern while maintaining a mechanical strength. SOLUTION: The present invention provides a stencil mask having a membrane group provided with beams 2, a plurality of membranes 1 surrounded by the beams, and opening patterns 5 provided in the membranes, and having five or more membrane groups, with an opening pattern of each membrane group being a complementary division pattern which is a mutually different part of the same pattern. With this structure, even if a design pattern has a large area (for example, larger pattern than a size of the membrane), the complementary division patterns can be arranged in the membrane group of the stencil mask. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在保持机械强度的同时布置互补划分图案的模板掩模。解决方案：本发明提供了一种具有膜组的模板掩模，其具有梁2，被梁包围的多个膜1和设置在膜中的开口图案5，并且具有五个或更多个膜组，其中每个膜组的开口图案是作为相同图案的相互不同部分的互补分割图案。利用这种结构，即使设计图案具有大的面积（例如，比膜的尺寸更大的图案），可以在模板掩模的膜组中布置互补划分图案。版权所有（C）2008，JPO＆INPIT

35. 发明专利

JP2007214410A Stress managing method of self standing thin film and stencil-mask manufacturing method 审中-公开
标题翻译：自动薄膜和薄膜制造方法的应力管理方法
公开(公告)号：JP2007214410A
公开(公告)日：2007-08-23
申请号：JP2006033427
申请日：2006-02-10
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI , KUROSU TOSHIAKI
IPC分类号： H01L21/027 , G03F1/20
摘要： PROBLEM TO BE SOLVED: To provide a stress managing method of a self standing thin film for a stencil mask capable of maintaining a high pattern-position accuracy, and to provide a manufacturing method of the stencil mask. SOLUTION: In the stress managing method of a self standing thin film for a stencil mask, an SOI substrate 30 is prepared comprising an Si single-crystal supporting substrate 11, an intermediate oxide-film layer 21, and an Si single-crystal thin-film layer 31. Further, impurities (P (phosphorus), B (boron), etc.) for adjusting the stresses of thin films are introduced into the Si single-crystal thin-film layer 31 of the SOI substrate 30. Moreover, the SOI substrate 30a is created having the Si single-crystal thin-film layer 31a having the introduced impurities for adjusting the stresses. Subsequently, a resistance measuring device 210 and a four-probe measurement head 211 of a stress measuring apparatus 200 are so used as to measure the resistance value of the Si single-crystal thin-film layer 31a having the introduced impurities for adjusting the stresses. Furthermore, the measured resistance values are taken into an operational processor 220 to indicate the stresses of the Si single-crystal thin-film layer 31a by converting the resistance values into the stresses. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够保持高图案位置精度的用于模板掩模的自立薄膜的应力管理方法，并提供模板掩模的制造方法。解决方案：在用于模版掩模的自立式薄膜的应力管理方法中，制备SOI衬底30，其包括Si单晶支撑衬底11，中间氧化物膜层21和Si单晶支撑衬底，另外，用于调整薄膜的应力的杂质（P（磷），B（硼）等）被引入到SOI衬底30的Si单晶薄膜层31中。此外，产生具有引入杂质的Si单晶薄膜层31a以调节应力的SOI衬底30a。随后，应用测量装置200的电阻测量装置210和四探头测量头211用于测量具有用于调节应力的引入杂质的Si单晶薄膜层31a的电阻值。此外，将测量的电阻值转入操作处理器220，以通过将电阻值转换为应力来指示Si单晶薄膜层31a的应力。版权所有（C）2007，JPO＆INPIT

36. 发明专利

JP2007081272A Transferring mask for charged particle, method of manufacturing it, and method of transferring using transferring mask for charged particle 有权
标题翻译：用于充电颗粒的转移掩模，其制造方法以及使用转移掩模传输的方法用于充电颗粒
公开(公告)号：JP2007081272A
公开(公告)日：2007-03-29
申请号：JP2005269749
申请日：2005-09-16
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI , KUNIYA SHINJI , NEGISHI YOSHIYUKI
IPC分类号： H01L21/027 , G03F1/42 , G03F1/44
摘要： PROBLEM TO BE SOLVED: To provide a transferring mask for charged particles which can correct a location of a circuit pattern transferred on a wafer by locating a non-penetration pattern for measuring a coordinate of a position in a margin area (skirt portion) within a self-supporting membrane, to provide a method of manufacturing it, and to provide a method of transferring using the transferring mask for the charged particles. SOLUTION: In the transferring mask 100 for the charged particles, the self-supporting membrane 13a is formed on a supporting frame 11a and a beam 11b through an intermediate oxide film 12, and in the self-supporting membrane 13a, a stencil (opening) transferring pattern 14 and a non-penetration pattern 15a for measuring a coordinate of a position formed of recesses or a non-penetration pattern 51a for measuring a coordinate of a position formed of protrusions in the margin area (skirt portion). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种带电粒子的转印掩模，其可以通过定位用于测量边缘区域中的位置坐标的非穿透图案来校正在晶片上转印的电路图案的位置（裙部分），以提供其制造方法，并提供使用用于带电粒子的转印掩模转印的方法。解决方案：在用于带电粒子的转印掩模100中，自支撑膜13a通过中间氧化膜12形成在支撑框架11a和梁11b上，并且在自支撑膜13a中，模板（开口）转印图案14和用于测量由凹部形成的位置的坐标的非穿透图案15a或用于测量由边缘区域（裙部））中的突起形成的位置的坐标的非穿透图案51a。版权所有（C）2007，JPO＆INPIT

37. 发明专利

JP2006245259A Stencil mask blank, stencil mask and manufacturing method thereof, and pattern exposure method 有权
标题翻译： STENCIL MASK BLANK，STENCIL MASK及其制造方法和图案曝光方法
公开(公告)号：JP2006245259A
公开(公告)日：2006-09-14
申请号：JP2005058465
申请日：2005-03-03
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： KUROSU TOSHIAKI , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： H01L21/027 , C23C14/14 , G03F1/20 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask blank for manufacturing a stencil mask with which transfer accuracy is prevented from being deteriorated because charges are accumulated in a warpage adjusting layer due to irradiation of an electron beam in exposure and the electron beam is deviated, and to provide the stencil mask, a manufacturing method thereof and a pattern exposure method of charged particle beam using the stencil mask. SOLUTION: The stencil mask blank is provided with a supporting substrate consisting of a single crystalline silicon wafer, an active layer for providing the transfer pattern, an intermediate insulating layer formed between the supporting substrate and the active layer, and an amorphous silicon layer provided on the other side of the supporting substrate. In the stencil mask blank, openings corresponding to the transfer pattern are provided on the amorphous silicon layer, the supporting substrate and the intermediate insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造模板掩模的模版掩模坯料，由于曝光中的电子束的照射，由于电荷聚集在翘曲调节层中，所以防止了转印精度的劣化，并且电子束并且提供模板掩模，其制造方法和使用该模板掩模的带电粒子束的图案曝光方法。解决方案：模板掩模坯料设置有由单晶硅晶片，用于提供转印图案的有源层，形成在支撑基板和有源层之间的中间绝缘层和非晶硅层，设置在支撑基板的另一侧。在模板掩模坯料中，在非晶硅层，支撑基板和中间绝缘层上设置与转印图案对应的开口。版权所有（C）2006，JPO＆NCIPI

38. 发明专利

JP2006098664A Substrate, stencil mask and exposure method 审中-公开
标题翻译：基质，茎膜掩蔽和暴露方法
公开(公告)号：JP2006098664A
公开(公告)日：2006-04-13
申请号：JP2004283966
申请日：2004-09-29
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： KON MASATO , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： G03F1/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate having an intermediate film serving as an etching stopper layer, in which the stresses of a thin film serving as a self-sustaining membrane, the intermediate film and a support substrate are optimally adjusted and which has conductivity, for the production of stencil mask that uses the substrate, and to provide the stencil mask and an exposure method. SOLUTION: The substrate is provided having such structure that an indium oxide thin film and a silicon thin film are laminated on the support substrate in this order, wherein stress adjustment is performed between the silicon thin film/indium oxide thin film and the support substrate, and wherein the indium oxide thin film contains one kind or more of elements selected from among tin, titanium, zirconium, hafnium, niobium, tantalum, tungsten, germanium, tellurium, zinc and fluorine as substances other than oxygen and indium. The stencil mask produced, by using the substrate and the exposure method that uses the mask are also provided. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有作为蚀刻停止层的中间膜的基板，其中用作自持膜的薄膜的应力，中间膜和支撑基板被最佳地调节，其具有导电性，用于生产使用基底的模板掩模，以及提供模板掩模和曝光方法。解决方案：提供具有以下结构的基板：氧化铟薄膜和硅薄膜依次层叠在支撑基板上，其中在硅薄膜/氧化铟薄膜和并且其中所述氧化铟薄膜含有选自锡，钛，锆，铪，铌，钽，钨，锗，碲，锌和氟中的除了氧和铟以外的其它元素中的一种以上。还提供了通过使用基板产生的模板掩模和使用掩模的曝光方法。版权所有（C）2006，JPO＆NCIPI

39. 发明专利

JP2005033072A Foreign substance removal method and device on transfer mask for charged particle beam 审中-公开
标题翻译：外来物质去除方法和装载粒子束传输掩模的装置
公开(公告)号：JP2005033072A
公开(公告)日：2005-02-03
申请号：JP2003272192
申请日：2003-07-09
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a foreign substance removal method and device, which facilitates the removal of a foreign substance that is unlikely to be removed by chemical means such as cleaning and that adheres to the surface of a transfer mask for a charged particle beam, and which does not damage the mask at other portions.
SOLUTION: The foreign substance removal device on a transfer mask for a charged particle beam is to attract for removal or repel for removal a foreign substance with electrostatic force by making a prober having a pointed tip end to which electric charges are applied approach the foreign substance. The device comprises a movable stage for placing the transfer mask serving to remove a foreign substance; a loader/unloader for discharging the transfer mask from which the foreign substance is removed; an imaging apparatus movable in X and Y axis directions with a Z axis of the stage taken as an optical axis thereof; the prober having its tip end located on the optical axis, being movable in the Z axis direction and movable in the X and Y directions in synchronism with the imaging apparatus, and imparting enough electric charges to the foreign substance contained therein; a releasing device for releasing the foreign substance from the prober; a control device for controlling the stage, loader/unloader, imaging device, and prober; and a monitor.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种异物去除方法和装置，其有助于除去通过诸如清洁的化学手段不可能除去的异物，并且附着到转印掩模的表面带电粒子束，并且不损害其它部分的掩模。解决方案：用于带电粒子束的转印掩模上的异物去除装置通过使具有施加电荷的尖端的探针接近来吸引去除或排斥以静电力除去异物外来物质。该装置包括用于放置用于去除异物的传送掩模的可移动台; 用于排出除去异物的转印面罩的装载机/卸载机; 成像装置，其沿X轴方向和Y轴方向移动，其台阶的Z轴为其光轴; 所述探测器的前端位于所述光轴上，能够在所述Z轴方向上移动，并且能够与所述摄像装置同步地在X方向和Y方向上移动，并且向包含在其中的异物赋予足够的电荷; 用于从探测器中释放异物的释放装置; 用于控制舞台，装载机/卸载机，成像装置和探测器的控制装置; 和监视器。版权所有（C）2005，JPO＆NCIPI

40. 发明专利

JP2003264139A STENCIL MASK AND METHOD FOR TRANSFERRING PATTERN THEREOF 审中-公开
公开(公告)号：JP2003264139A
公开(公告)日：2003-09-19
申请号：JP2002064962
申请日：2002-03-11
申请人： TOPPAN PRINTING CO LTD
发明人： YOTSUI KENTA , TAMURA AKIRA , EGUCHI HIDEYUKI
IPC分类号： G03F1/20 , G03F7/20 , H01J37/09 , H01J37/305 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a long-life stencil mask and a method for precise pattern transfer by which the influence of sticking of foreign matters in pattern transfer is smaller than that in a conventional stencil mask and method in the case of performing magnification exposure by using an electron beam. SOLUTION: The stencil mask is a transferring mask which is provided with a base body and a mask base supported by the base body on one side of the base body and has an opening formed at the mask base. The stencil mask has a transmission hole pattern with a taper angle of >90° at the opening of the mask body which transmits a charged particle beam from the side of the base body to the side of the mask base. The taper angle of the transmission hole pattern ranges 87° to 90°, and the thickness of the mask base body ranges 0.1 to 2 μm. COPYRIGHT: (C)2003,JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式