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31. 发明专利

JPS54154992A SEMICONDUCTOR ELECTRODE SUBSTRATE FOR LIQUID CRYSTAL PANEL DRIVE 失效
公开(公告)号：JPS54154992A
公开(公告)日：1979-12-06
申请号：JP6398478
申请日：1978-05-29
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： G02F1/136 , G02F1/13 , G02F1/1368 , G09F9/30
摘要： PURPOSE:To reduce greatly the number of the lead-out terminals to outside and thus to reduce the assembling cost by incorporating the peripheral circuits into the same substrate and in nearly the same process as the picture element selecting semiconductor element. CONSTITUTION:For the static drive type liquid crystal panel electrode substrate containing the semiconductor element with every picture element, not only the picture element selection part but the peripheral driving circuit are integrated onto the same substrate. Both the shift register and the converter which are the peripheral circuits feature the exactly same manufacturing process to each other since the circuit consists of the MOS-type transistor similar to the picture element selecting transistor. Thus, the semiconductor element can be manufactured in the same process along with the peripheral circuits. In such way, the peripheral circuits are integrated onto the same substrate, and as a result the number of the terminals to be connected can be reduced down to 4 or 5 pieces such as the input signal, clock and power terminals and others. Accordingly, the assembling cost can be reduced.

32. 发明专利

JPS5443465A SEMICONUDUCTOR DEVICE 失效
公开(公告)号：JPS5443465A
公开(公告)日：1979-04-06
申请号：JP10966377
申请日：1977-09-12
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60
摘要： PURPOSE:To facilitate particularly the gang bonding by using the metal layer formed directly on the Si substrate to the junction pad. CONSTITUTION:Diffusion layer 10 which is opposite conductive to the substrate is provided on Si substrate 9, and opening is drilled only at the vamp area of surface insulator film 11. Then vamp 12 is formed through the electric coating method. Thus, the vamp can be formed in an extremely easy way, and a gang bonding semiconductor device is obtained with a low cost.

33. 发明专利

JPS5441070A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5441070A
公开(公告)日：1979-03-31
申请号：JP10818177
申请日：1977-09-08
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01L21/68 , H01L21/52 , H01L21/58 , H01L21/60
摘要： PURPOSE:To achieve the automation of alignment work by providing ferromagnetic materials in the accurate positions on a chip or wafer surface by a simple method.

34. 发明专利

JPS5221622A ORGANIC ELECTRICITY STORAGE DEVICE UTILIZING RADIATION OF LIGHT 失效
公开(公告)号：JPS5221622A
公开(公告)日：1977-02-18
申请号：JP104476
申请日：1976-01-06
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01M8/18 , H01M14/00

35. 发明专利

JPS51117590A ORGANIC MATTER SOLAR BATTERY 失效
公开(公告)号：JPS51117590A
公开(公告)日：1976-10-15
申请号：JP4248175
申请日：1975-04-08
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01M14/00 , H01L31/04 , H01L51/42
摘要： PURPOSE:An organic matter solar battery that makes the series connections of unit cells simple as compared to semiconductor solar batteries.

36. 发明专利

JPS51104530A 失效
公开(公告)号：JPS51104530A
公开(公告)日：1976-09-16
申请号：JP15857475
申请日：1975-12-29
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01M8/18 , H01M14/00

37. 发明专利

JPS57106077A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS57106077A
公开(公告)日：1982-07-01
申请号：JP18174880
申请日：1980-12-22
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01L29/78
摘要： PURPOSE:To improve the degree of integration, by a method wherein an area of a diffusion layer itself can be equalized to a contact hole. CONSTITUTION:After an LOCOS oxidized film 8 is formed on a surface of an Si substrate 7, a gate oxidized film 9 and a multicrystal Si film 10 are laminated. Then, after impurity is diffused in the film 10, the film 10 is etched in the shape of a gate electrode by a photo etching. An Si-nitrided film 11 is then formed on the upper and surfaces of the film 10 being so etched. A film 9 except a gate part is then etched for removal, and then, a source.drain diffusion layer 12 is formed by diffusion. With the contact hole as it is, an Al electrode 13 is formed. This formation permits the substantial shortening of a lateral size.

38. 发明专利

JPS5691460A MANUFACTURING OF DISPERSION LAYER RESISTOR 失效
公开(公告)号：JPS5691460A
公开(公告)日：1981-07-24
申请号：JP16870279
申请日：1979-12-25
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01C17/06 , H01L21/28 , H01L21/822 , H01L27/04 , H01L29/8605
摘要： PURPOSE:To reduce fluctuation of resistance value, by applying beam onto a resistor at the time when processing of the resistance body into its final shape and processing of take-out electrode wiring were all completed. CONSTITUTION:A dispersion layer 3 is formed on main surface of a silicon substrate 1 after or at the time of completion of building of a transistor and other elements in the substrate. And, after a silicon oxide membrane 2 was formed and a contact window was opened, a take-out electrode 4 is formed. And then, laser beam is applied by a ruby laser pulse oscillation for annealing of the product. Thus annealed dispersion layer resistance body takes resistance values of less fluctuation. Other than the aforementioned ruby laser, Ar laser and YAC laser may be used, and even in the case of continuous oscillation or pulse oscillation, the same effect can be obtained.

39. 发明专利

JPS5673452A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS5673452A
公开(公告)日：1981-06-18
申请号：JP15125379
申请日：1979-11-20
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01L21/8238 , H01L21/768 , H01L27/08 , H01L27/092 , H01L29/78
摘要： PURPOSE:To prevent the punch through phenomenon against a thin diffusion layer in a semiconductor integrated circuit device by a method wherein the fourth group metal element is used as the lead out wiring of the diffusion layer. CONSTITUTION:Al of the third group element is used commonly as the lead out wiring of the semiconductor integrated circuit device, but the Al becomes to be an acceptor against Si to form a P diffusion layer, and the Al diffuses in the Si to conduct to the substrate when the N type diffusion layer is shallow. Therefore when the lead out wire is formed with the fourth group metal like Ti, Zr, Hf, etc., because the Si is also the fourth group element, and those elements are hard to act as a doner or an acceptor and are metals having high melting points, so that the punch through phenomenon does not take place even if the diffusion layer is shallow.

40. 发明专利

JPS5552263A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS5552263A
公开(公告)日：1980-04-16
申请号：JP12489978
申请日：1978-10-11
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/417 , H01L29/78 , H01L29/786
摘要： PURPOSE:To provide high density by forming a thin MOS-type semiconductor on an insulation film of a MOS-type semiconductor formed in a semiconductor substrate. CONSTITUTION:Sources 9, 12 and drains 10, 11 of an N channel type semiconductor are formed by means of phosphorus diffusion in a P-type Si substrate 8. Whereas P-type diffusion layers are formed at sections 13, 15 and 17 by forming multicrystal silicone through a gate oxidation film. The drains 10, 11 of transistors TrA, B are assigned as TrC, D respectively. Ions are supplied into channel sections 14, 15 of the thin TrC, D to control threshold value. Further, the gate 13, 17 of the TrA, B are assigned as drains for the TrC, D respectively. Finally when electric wires connect the drains in the TrA, B with the other transistor's gates, a unit cell having four transistors is obtained resulting high density.

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