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31. 发明专利

JPH06212284A ANNEALING APPARATUS 失效
公开(公告)号：JPH06212284A
公开(公告)日：1994-08-02
申请号：JP691793
申请日：1993-01-19
申请人： MITSUBISHI HEAVY IND LTD , SUMITOMO METAL IND , RIYOOSEN ENGINEERS KK
发明人： TAUCHI KUNIAKI , KAMEDA KOJI , KASAI MASAHIRO , KOJIMA TOSHIO , KANOU YASUNAGA , NISHIYAMA TOSHIFUMI , YOSHIDA SHIGEKI
IPC分类号： C21D9/56
摘要： PURPOSE:To simply execute temp. rising constantly under the most optimum condition by respectively controlling a fuel flow quantity, which is supplied to a heating burner arranged at each plural heating zone, in response to passing condition through a fuel control valve. CONSTITUTION:A steel sheet 101 is sent to a pickling device 26 after passing through a preheating zone 2, heating zone 6, soaking zone 19 and cooling zone 22 in sequence. In the annealing apparatus, plural heating zones 111-116 are placed along a pass line of the steel sheet 101 in the heating zone 6, arranging each heating burner 11 thereto. These heating burners 11 are arranged with each fuel control valve 12, controlling the fuel flow quantity for each heating zone. At this time, the fuel control valve 12 is controlled by a control device 16 so that the fuel flow quantity becomes the preset quantity in response to the passing condition of the steel sheet 101.

32. 发明专利

JPH0688300A PRODUCTION OF STAINLESS STEEL EXCELLENT IN CORROSION RESISTANCE AND SURFACE PROPERTY 失效
公开(公告)号：JPH0688300A
公开(公告)日：1994-03-29
申请号：JP23856292
申请日：1992-09-07
申请人： SUMITOMO METAL IND
发明人： KITANI SHIGERU , HAYASHI YOSHIO , KOJIMA TOSHIO
IPC分类号： C25F3/06
摘要： PURPOSE:To improve the corrosion resistance and surface property of a stainless steel at the time of cathodically or anodically electrolyzing the descaled stainless steel in aq. nitric acid by specifying the current density and potential of the steel surface in electrolysis. CONSTITUTION:A stainless steel, which has been descaled or, especially, final- annealed and pickled, is cathodically and/or anodically electrolyzed in aq. nitric acid. In this case, the current density is controlled to 12.5XC to 50XC mA/cm (C is nitric acid concn. in %) in the cathodic electrolysis and to >2mA/cm in anodic electrolysis. The surface potential of the stainless steel is adjusted in cathodic electrolysis to (0.005C+0.15) to -(0.005C+2.15)V(vs.SCE) (C is nitric acid concn. in %) and in anodic electrolysis to nobler than 1.1V(vs.SCE). Consequently, a stainless steel improved with the surface state (gloss, texture) and corrosion resistance is obtained.

33. 发明专利

JPH05321000A CATHODE FOR ELECTROLYSIS IN NITRIC ACID 失效
公开(公告)号：JPH05321000A
公开(公告)日：1993-12-07
申请号：JP7759992
申请日：1992-03-31
申请人： SUMITOMO METAL IND
发明人： KITANI SHIGERU , HAYASHI YOSHIO , KOJIMA TOSHIO
IPC分类号： C25F1/06 , C25F7/00
摘要： PURPOSE:To obtain a cathode having a long service life by forming a cathode used for electrolysis in an aq. nitric acid soln. with a Ti- or Zr-based metal. CONSTITUTION:When stainless steel is electrolytically pickled with an aq. nitric acid soln. as an electrolytic soln., a cathode used for electrolysis in the aq. nitric acid soln. is formed with metallic Ti, a Ti alloy, metallic Zr or a Zr alloy with a stable passive coating film formed on the surface. It is supposed that the passive coating film is not destructed even by cathodic electrolysis and prevents the dissolution of the Ti or Zr base because the stability of the film is very high especially in an acid having high oxidizing power such as nitric acid. The film does not block electric conduction.

34. 发明专利

JPH11233578A MEASUREMENT METHOD OF CONCENTRATION DISTRIBUTION IN DEPTH DIRECTION OF IMPURITY 失效
公开(公告)号：JPH11233578A
公开(公告)日：1999-08-27
申请号：JP2680698
申请日：1998-02-09
申请人： HITACHI LTD
发明人： KOJIMA TOSHIO , KAKIBAYASHI HIROSHI
IPC分类号： G01N27/62 , G01N21/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure concentration distribution highly precisely and readily in a depth direction of an impurity element doped in a semiconductor wafer by forming an oxide film in the first, second and third oxidation processes, dissolving the oxide film, and obtaining the amount of silicon and impurity in the obtained solution. SOLUTION: In a first oxidation process, a silicon oxide film is formed in the first atmosphere. In the second oxidation process, a silicon oxide film is formed in the second atmosphere whose oxidation velocity is smaller than that of the first atmosphere. In the third oxidation process, a silicon oxide film is formed in the third atmosphere whose oxidation velocity is larger than that of the second atmosphere. After a silicon oxide film is formed, etchant comprising dilute hydrofluoric acid containing hydrogen peroxide or hydrochloric acid is dropped on the surface of the silicon wafer 2 while a silicon wafer 2 is being fixed to a fixing jig 3, and a silicon oxide film is etched and dissolved. The amounts of Sb which is an impurity element and silicon are measured by an inductively coupled plasma emission spectrometry, and the like.

35. 发明专利

JPS52137252A TEST METHOD FOR CATHODE BASE MATERIAL 失效
公开(公告)号：JPS52137252A
公开(公告)日：1977-11-16
申请号：JP5329176
申请日：1976-05-12
申请人： HITACHI LTD
发明人： SHIBATA NORIO , KOJIMA TOSHIO
IPC分类号： H01J1/14 , H01J1/16 , H01J9/04 , H01J9/42
摘要： PURPOSE:To simplify the test method for metallic zirconium content in the ingot alloy used as a cathode base material so as not to necessitate a specialist.

36. 发明专利

JPH10253556A PREPARATION OF SAMPLE FOR ANALYSIS 失效
公开(公告)号：JPH10253556A
公开(公告)日：1998-09-25
申请号：JP6048797
申请日：1997-03-14
申请人： HITACHI LTD
发明人： HOZAWA KAZUYUKI , ITOGA TOSHIHIKO , KOJIMA TOSHIO , OKURA OSAMU
IPC分类号： G01N23/223 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a sample for analysis, to shorten the time for preparation of the sample, and to improve the accuracy of quantitative determination of contamination of the surface of a base, of which the amount of contamination is unknown, by dripping a sampling liquid by a small quantity in several times repeatedly onto one point of the surface of the base being heated. SOLUTION: A base 11 for a standard sample is set on a jig 12 and heated to a temperature of 110 deg.C, by using a temperature regulator 21, in a state wherein the shape of the base 11 is changed to a recessed one with the rear thereof kept in vacuum. A standard solution of which the atomic concentration is known is sampled by 100μl (the atomic weight is equivalent to 1×10 atoms/cm ) by using a micropipette 22. The micropipette 22 is fixed at the center of the base 11 by using micropipette supports 23, 24 and 25 and a sampling liquid 15 is dripped by 2μl in 50 times separately to the center of the base 11. The result shows that the dimension of a trace of the dripped liquid is 2mm or less with respect to any samples. The detection efficiency of a working curve of the standard sample for the working curve is improved in values of the curve to be about three times better than that of the working curve prepared by a usual method.

37. 发明专利

JPH085555A PLASMA TORCH AND ELEMENT ANALYSIS METHOD USING THIS TORCH 失效
公开(公告)号：JPH085555A
公开(公告)日：1996-01-12
申请号：JP13536694
申请日：1994-06-17
申请人： HITACHI LTD
发明人： KOJIMA TOSHIO , MATSUBARA ATSUKO
IPC分类号： G01N27/62 , G01N21/73 , H05H1/30
摘要： PURPOSE:To obtain a plasma torch for analyzing silicon in a sample solution containing hydrofluoric acid quantitatively with high accuracy in emission spectrometry or mass spectrometry utilizing plasma. CONSTITUTION:Tubular members 1-3 made of hydrofluoric acid resistant, heat resistant and high frequency resistant material, i.e., alumina, are fitted concentrically to a supporting base 5 thus constituting a plasma torch 14. Airtightness is sustained at the fitting part by means of a plurality of O-rings 9 which also prevent axial shift of the tubular members. Gas for producing plasma flame 11 is fed into the plasma torch through channels 7, 8 made in the supporting base 5. A sample solution is atomized and introduced through the tubular member 3 to the center of the plasma flame 11 which is thereby excited, ionized and analyzed. This method realizes accurate measurement of dopant profile or the like in silicon semiconductor process thus providing a data effective for enhancement of the quality of a semiconductor device.

38. 发明专利

JPH10135169A METAL IMPURITIES RECOVERING EQUIPMENT OF SEMICONDUCTOR SUBSTRATE SURFACE 失效
公开(公告)号：JPH10135169A
公开(公告)日：1998-05-22
申请号：JP28792996
申请日：1996-10-30
申请人： HITACHI LTD
发明人： YAMAMOTO TATSUHARU , KOJIMA TOSHIO , KANEBORI KEIICHI , KANETOMO MASABUMI , ANDO TAKASHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a metal impurities recovering equipment which scans droplets for recovering metal impurities on a wafer surface without bringing the droplets into contact with the other surface. SOLUTION: A wafer 1 is fixed on a base 2, and droplets 2 for recovering metal impurities are dripped on the surface of a wafer 1. Two excitation actuators 5 are rectangularly arranged on the base 6, in the X-direction and the Y-direction. The droplets 2 are moved by applying periodic force of inertia to the X and Y-directions. Optical sensors 4 for position detection of droplets are arranged, so as to surround the droplet 2 in the X and Y-directions, and follow up the motion of the droplets 2 by sensor moving mechanism 3. By sending a signal for position correction to the excitation actuators 5, the scanning path corresponding to the wafer size and the surface stay time of droplets corresponding to the state of contamination are controlled.

39. 发明专利

JPH0982679A SURFACE TREATING METHOD AND DEVICE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0982679A
公开(公告)日：1997-03-28
申请号：JP24103295
申请日：1995-09-20
申请人： HITACHI LTD
发明人： KOJIMA TOSHIO , MATSUBARA ATSUKO , OKURA OSAMU , ITOGA TOSHIHIKO , TAKAHAMA TAKASHI
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a treating method and a device for making the surface of a semiconductor substrate excellent in cleanness at a normal temperature under a normal pressure. SOLUTION: A surface treating method comprises a first process where the surface of a semiconductor substrate 1 is irradiated with ultraviolet rays emitted from a light source 5 in an oxidizing vapor atmosphere inside a chamber 12 for the formation of an oxide film out the substrate 1 and a second process where the oxide film formed on the surface of the substrate 1 is removed by dissolution with cleaning liquid whose main component is hydrofluoric acid. In the first process, an oxide film is formed on the surface of the substrate 1 as the substrate 1 is irradiated with ultraviolet rays in an oxidizing vapor atmosphere which includes an ammonia component. At removal of an oxide film, it is preferable that hydrofluoric acid cleaning liquid where at least one element selected out of hydrochloric acid and hydrogen peroxide is added is used to clean the surface of the substrate B. By this setup, gas and reagent solution used for forming an oxide film are one/a few tens as much in amount as those used in a conventional wet method, so that a surface treating method and a device of this constitution can be remarkably lessened in operating cost including the cost of waste disposal.

40. 发明专利

JPH0961382A TOTAL REFLECTION FLUORESCENT X-RAY ANALYZER 失效
公开(公告)号：JPH0961382A
公开(公告)日：1997-03-07
申请号：JP21567295
申请日：1995-08-24
申请人： HITACHI LTD
发明人： SUGA MITSUO , OCHIAI ISAO , KOJIMA TOSHIO , ITOGA TOSHIHIKO
IPC分类号： G01N23/223
摘要： PROBLEM TO BE SOLVED: To improve the detection limit of impurity elements in the elementary analysis near the surface of a sample total reflecting first-order X-rays. SOLUTION: The total reflection fluorescent X-ray analyzer having an emitting device for emitting a first-order X-ray 103 to a sample surface at a minute incident angle, a fluorescent X-ray detector 108 for detecting the fluorescent X-ray generated from the area of a sample 106 to which the first-order X-ray 103 is emitted, an a reflected X-ray detector 17 for detecting the reflected X-ray reflected by the sample 106, is formed out of two or more semiconductor detecting elements 150-152. Thus, the detecting limit of impurity elements contained in the sample 106 can be improved by improvement in energy resolution of the fluorescent X-ray detector 108 and the improvement in maximum counting ratio of the fluorescent X-ray by the increase in detected solid angle of the fluorescent X-ray, and the separation of adjacent peaks and the detection of a light element are also facilitated.

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