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    • 1. 发明专利
    • PLASMA X-RAY GENERATION DEVICE
    • JPH01157042A
    • 1989-06-20
    • JP31402587
    • 1987-12-14
    • HITACHI LTD
    • KATO YASUOOCHIAI ISAOMURAYAMA SEIICHI
    • H05G2/00G03F7/20G21K5/00H01J35/18H01J35/22H01L21/027
    • PURPOSE:To reduce substantially the damage of an X-ray permeation window by forming a plasma in an atmosphere exposed to such pressure as negligibly low for X-ray absorption, irradiating an object through a throttle having a minimum solid angle and blocking particles off the direction toward an irradiation area with the throttle. CONSTITUTION:Two-stage throttles a and 8' having an opening agreeing to the solid angle of an X-ray irradiated toward an irradiation area are placed in a plasma formation space at the predetermined intervals. Particles irradiated from a plasma to an area within the solid angle collide with gas molecules existing on the orbit of the particles and are scattered, even to a space 10 between the two throttles 8 and 8', and a space 10' between the throttle 8' and a beryllium window 7. Particles off the solid angle are blocked with the throttles 8 and 8', and the number of high energy particles colliding with the window 7 is substantially reduced with the throttles 8 and 8'. Also, it is possible to reduce the number of high energy particles reaching the window 7 further substantially by applying more-staged throttles.
    • 3. 发明专利
    • X-RAY GENERATOR
    • JPH01120742A
    • 1989-05-12
    • JP27562187
    • 1987-11-02
    • HITACHI LTD
    • OCHIAI ISAOKATO YASUO
    • H05G2/00H01J35/22H05G1/00
    • PURPOSE:To prevent the atmospheric air from infiltrating into a plasma generating section when an X-ray extracting window is broken by providing a vacuum valve partitioning a space between the plasma generating section and the X-ray extracting window. CONSTITUTION:A remote-controllable vacuum valve 6 partitioning a space between a plasma generating section and an X-ray extracting window 7 is provided, a device feeding or evacuating the space on the X-ray extracting window 7 side partitioned by the vacuum valve 6 and a sensor detecting the pressure rise are provided, the opening and closing of the vacuum valve 6 and the operation of a plasma generating mechanism are controlled by the signal of the sensor. The infiltration of the atmospheric air into the plasma generating section is reduced when the X-ray extracting window 7 is broken or this extracting window 7 is exchanged, and the X-ray intensity with good reproducibility can be obtained for a long time.
    • 7. 发明专利
    • ELECTRON MICROSCOPE
    • JPH0982261A
    • 1997-03-28
    • JP23500295
    • 1995-09-13
    • HITACHI LTD
    • OCHIAI ISAOKURODA KATSUHIROISAGOZAWA SHIGETOKANDA KIMIOIGARASHI TOKUSHICHI
    • G01N23/225H01J37/252
    • PROBLEM TO BE SOLVED: To provide an electron microscope capable of increasing a maximum counting rate and a signal-noise ratio, and improving secondary electron detection sensitivity by housing a plurality of X-ray detection elements in an X-ray detector having an open end of horse's hoof form, and laying a secondary electron detector at the U-shaped open end of the X-ray detector. SOLUTION: In a scanning electron microscope, an electron beam diaphragmed with an objective lens 4 irradiates a sample 5. In addition, an X-ray detector 31 and a secondary electron detector 11 are laid between the objective lens 4 and the sample 5 along a lateral direction. The end of the X-ray detector 31 has a horse's hoof shape and is formed to be open. Also, the secondary electron detector 11 is positioned at the side of the open end. Secondary electrons generated from the sample 5 are attracted from space 15, due to the electric field of the detector 11. Furthermore, a vessel of horse's hoof form at the end of the X-ray detector 31 contains a plurality of X-ray detection elements 33, and the end of the X-ray detector 31 is provided with an X-ray transmission window 36 and a collimator 37. In this case, the vessel has an opening of horse's hoof form and, therefore, the X-ray detector 31 is movable in space between the objective lens 4 and the sample 5.
    • 8. 发明专利
    • TOTAL REFLECTION FLUORESCENT X-RAY ANALYZER
    • JPH0961382A
    • 1997-03-07
    • JP21567295
    • 1995-08-24
    • HITACHI LTD
    • SUGA MITSUOOCHIAI ISAOKOJIMA TOSHIOITOGA TOSHIHIKO
    • G01N23/223
    • PROBLEM TO BE SOLVED: To improve the detection limit of impurity elements in the elementary analysis near the surface of a sample total reflecting first-order X-rays. SOLUTION: The total reflection fluorescent X-ray analyzer having an emitting device for emitting a first-order X-ray 103 to a sample surface at a minute incident angle, a fluorescent X-ray detector 108 for detecting the fluorescent X-ray generated from the area of a sample 106 to which the first-order X-ray 103 is emitted, an a reflected X-ray detector 17 for detecting the reflected X-ray reflected by the sample 106, is formed out of two or more semiconductor detecting elements 150-152. Thus, the detecting limit of impurity elements contained in the sample 106 can be improved by improvement in energy resolution of the fluorescent X-ray detector 108 and the improvement in maximum counting ratio of the fluorescent X-ray by the increase in detected solid angle of the fluorescent X-ray, and the separation of adjacent peaks and the detection of a light element are also facilitated.
    • 9. 发明专利
    • SUPERCONDUCTING RADIATION SPECTROSCOPE
    • JPH08153905A
    • 1996-06-11
    • JP29425094
    • 1994-11-29
    • HITACHI LTD
    • SUGA MITSUOTAKAGUCHI MASANARIOCHIAI ISAO
    • H01L39/22
    • PURPOSE: To improve energy resolution of a radiation spectroscope, by constituting a superconducting radiation spectroscope containing a tunnel junction composed of superconductor-tunnel insulating film-superconductor and a substrate, forming the superconductor in the substrate, and retaining the tunnel junction with the substrate. CONSTITUTION: In order to form tunnel junctions 161, 162 on a substrate 101 composed of superconductor Nb by a lift-off method, a photoresist mask is formed. After the mask is formed, the mask surface is ground by a sputtering method, in order to clean the surface of the Nb substrate 101. After an Al film is formed on the substrate by a sputtering method, a tunnel insulating film of AlOx is formed by introducing oxygen. After an Nb film is formed by a sputtering method, the photoresist is dissolved by acetone washing, and a pattern is formed. By the above process, the tunnel junctions 161, 162 composed of proximity superconducting layers 111, 112, tunnel insulating films 121, 122, and upper superconducting electrodes 131, 132 are formed.