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    • 33. 发明专利
    • SURFACE ACOUSTIC WAVE ELEMENT AND ITS MANUFACTURE
    • JPH0548383A
    • 1993-02-26
    • JP19905291
    • 1991-08-08
    • SUMITOMO ELECTRIC INDUSTRIES
    • YAGOU AKIHIROFUJIMORI NAOHARUIMAI TAKAHIRONAKAHATA HIDEAKI
    • H03H3/08H03H9/145H03H9/25
    • PURPOSE:To obtain the surface acoustic wave element operated at a high frequency region without polishment by forming a dielectric thin film so that its growing-finished face forms an outer face thereby increasing the sound velocity more than the sound velocity of the piezoelectric substance. CONSTITUTION:A finished face of a dielectric thin film 2 in the surface acoustic wave element comprising a piezoelectric substrate 1, a comb-shaped electrode 3 and the thin film 2 forms an outer face of the surface acoustic wave element. The comb-shaped electrode 3 is formed on the surface of the substrate 1, and the dielectric thin film 2 whose sound velocity is faster than that of the piezoelectric body is formed on the electrode 3. Then the border face between the piezoelectric substrate 1 and the dielectric thin film 2 is smooth and does not require polishment. Furthermore, the dielectric thin film 2 is made of a diamond using a gas from which halogen atoms are supplied and a chemical compound including hydrogen atoms and the film is formed even at a low temperature or at a high temperature. Then the thin film 2 whose polishment is difficult and having a high sound velocity does not need polishment, and the surface acoustic wave element operated at a high frequency region without use of the film forming substrate is realized.