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31. 发明专利

JPH10185639A FLOWMETER 失效
公开(公告)号：JPH10185639A
公开(公告)日：1998-07-14
申请号：JP35027296
申请日：1996-12-27
申请人： TOKYO GAS CO LTD , OMRON TATEISI ELECTRONICS CO
发明人： KONDA NORIHIRO , NAKAMURA KENICHI , NIMURA TOSHIHIKO
IPC分类号： G01F1/68 , G01F1/69
摘要： PROBLEM TO BE SOLVED: To provide an accurate integrated flow by forming the structure that flow speed detecting sensitivity of plurality of flow sensors is changed in response to the direction of the flow, and comparing measurement values of the flow sensors so as to detect the direction of the flow of the fluid, and combining a flow sensor, which can not detect the direction of the flow, with a wind-breaking wall or an inclined surface. SOLUTION: A multipoint measurement type flowmeter 1 is formed of a single wind-breaking type flowmeter, and two of a normal and a reverse direction detecting flow sensors 12A, 12B are installed in an upstream side and a downstream side of a wind-breaking wall 14 provided in a board 11. The normal direction flow sensor 12A outputs a large output signal at the time of the normal flow, and in the case of a reverse flow, the flow is hindered by the operation of the wind-breaking wall so that the output signal becomes very small. The reverse direction detecting flow sensor 12B hardly outputs the output signal at the time of the normal flow, and it outputs a large output signal at the time of the reverse flow. At the time of computing an integrated flow, etc., measurement values of the flow sensors 12A, 12B are compared with each other, and the output signal thereof are compared with each other so as to detect the direction of the flow and obtain an accurate flow value.

32. 发明专利

JPH09159633A GAS SENSOR 失效
公开(公告)号：JPH09159633A
公开(公告)日：1997-06-20
申请号：JP31684195
申请日：1995-12-05
申请人： TOKYO GAS CO LTD
发明人： MORITA TAKAHIRO , NAKAMURA KENICHI , KIN SATORU
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To detect concentration of gas accurately according to a simple arithmetic expression by heat treating a gas sensitive film, i.e., a gate electrode, deposited on an insulation layer formed on a substrate and exposing the insulation layer partially. SOLUTION: A gas sensor 8 is disposed in the vessel of heat treatment system and heated at about 100 deg.C by means of a heater while setting the concentration of oxygen in the vessel at about 10,000ppm, for example. When that state is sustained for about 50 hours, a gate electrode (gas sensitive film) 20 is deformed to exposed an insulation layer 19 partially. Consequently, response of the sensor 8 is enhanced and since a variation of threshold voltage corresponding to the concentration of hydrogen can be obtained, concentration of gas can be determined according to a known theoretical arithmetic expression.

33. 发明专利

JPH08146035A VARIABLE VIRTUAL WEIGHT ACCELEROMETER 失效
公开(公告)号：JPH08146035A
公开(公告)日：1996-06-07
申请号：JP16555595
申请日：1995-06-30
申请人： TOKYO GAS CO LTD
发明人： SHIYOON SAMIYUERU KEEHIRU , NAKAMURA KENICHI
IPC分类号： B81B3/00 , G01H11/06 , G01P15/08 , G01P15/125 , G01V1/00
摘要： PURPOSE: To output signals only when the acceleration exceeds a threshold value by supporting a weight via a spring onto a frame vibrating by vibration waves and disposing electrodes above and below the weight. CONSTITUTION: A frame 2 and a cover plate 3 constitute a plurality of divided lower and upper electrodes 6, 7. The electrode 6 (7) is connected to an external electrode 64 (72) via electrode lead wires 61 to 63 (71). A vibrator 5 is fixed to a silicon substrate 21 of the frame 2 with an anchor 53. A zigzag spring 52 supporting a weight 51 gives the degree of freedom necessary for the weight 51 within a plane in a vibrating direction of earthquake waves. When a predetermined voltage is impressed for every pair of electrodes via the electrodes 64, 72 from a power source 8, the attraction force of a target size is formed between the electrodes 6 and 7, so that the weight 51 is in the middle of central parts of electrodes at the time when it is in the stationary. When the acceleration of vibration waves exceeds a threshold value, the weight 51 is located between the outermost electrodes. A capacitance change of a capacitor constituted between the electrodes is detected by a capacitance change detector 9, and an earthquake detection signal is output.

34. 发明专利

JPH0335531A MANUFACTURE OF MOS TRANSISTOR AND INTEGRATED CIRCUIT 失效
公开(公告)号：JPH0335531A
公开(公告)日：1991-02-15
申请号：JP16992489
申请日：1989-07-03
申请人： TOKYO GAS CO LTD
发明人： SHONO KATSUFUSA , NAKAMURA KENICHI , MATSUMOTO SOTOSUKE
IPC分类号： H01L29/78 , H01L21/263 , H01L21/336 , H01L21/8234 , H01L27/088
摘要： PURPOSE:To accurately and finely control threshold voltages of individual MOS transistors without reducing the operating speed of the transistor by a simple process technique by radiating a gate region of the transistor with an electron beam for controlling the flow of electrons from a source to a drain. CONSTITUTION:After an oxide film and a polysilicon film are formed on an N-type Si substrate, a gate region is formed with a first mask. Then, source, drain regions are formed with second mask, contact holes for electrodes are formed with third mask, and Al is deposited. Eventually, source, gate, drain electrodes are formed with a fourth mask. After a threshold voltage is previously measured, it is set to a threshold voltage controller, computer-controlled by a radiating position controller 5 to irradiate it with an electron beam by a predetermined dose. The electron beam dose is set to a desired value of a threshold voltage of MOS transistors for forming a MOS-IC according to the current amount of the beam and the scanning speed of the beam.

35. 发明专利

JPH01308032A FORMATION OF OXIDE FILM ON SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH01308032A
公开(公告)日：1989-12-12
申请号：JP13856788
申请日：1988-06-07
申请人： TOKYO GAS CO LTD
发明人： SHONO KATSUFUSA , NAKAMURA KENICHI
IPC分类号： H01L21/316
摘要： PURPOSE:To decrease an interfacial charge without reducing a film-forming speed for an SiO2 film and to make it possible to form a stable Si-SiO2 interface by a method wherein O2 gas and ammonia gas are mixed with each other to heat an Si wafer in a thermally oxidizing process for the Si water and after the film formation of the SiO2 film, the SiO2 film is heat-treated in an H2-containing atmosphere. CONSTITUTION:An Si carbide plate 6 for heat absorption is set on a quartz stand 5 arranged in the center of the interior of a quartz tube 1, an Si wafer 10 is set thereon, N2 gas is fed in the tube 1 from the exterior and the wafer is heated by infrared lamps 2. If the internal temperature of the tube 1 is stabilized, the N2 gas is transformed into dried O2 gas and NH3 gas to be contained in a ratio of 30% or lower to the O2 gas in a molar ratio to continue the heating and the wafer is oxidized. After the wafer is oxidized, N2 and H2 gases are this time flowed in the tube 1 in the ratio of 9:1 and a heat treatment is performed. In the case of formation of an SiO2 film, the larger the concentration of ammonia gas becomes, the larger a film- forming speed becomes. Therefore, the film-forming speed for the SiO2 film can be made larger than that in the case of a dry oxidation method, charge in an Si-SiO2 interface can be decreased and the SiO2 film with a stable interface can be obtained.

36. 发明专利

JP2006352164A PHOTOCHEMICAL REACTION APPARATUS USING DIAMOND ULTRAVIOLET RAY LIGHT EMITTING ELEMENT 审中-公开
公开(公告)号：JP2006352164A
公开(公告)日：2006-12-28
申请号：JP2006245590
申请日：2006-09-11
申请人： TOKYO GAS CO LTD
发明人： KONDA NORIHIRO , ISHIKURA TAKEFUMI , HORIUCHI KENJI , YAMASHITA SATOSHI , KAWAMURA AKI , NAKAMURA KAZUO , NAKAMURA KENICHI , IDE TAKAHIRO
IPC分类号： H01L33/26 , C01B13/10 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide a photochemical reaction apparatus using a diamond ultraviolet ray light emitting element. SOLUTION: A wavelength band of ≤300 nm has a pn junction structure in which a diamond p-type semiconductor layer and a diamond n-type semiconductor layer are provided. In the wavelength band, a photochemical reaction apparatus 99 includes a diode structure diamond ultraviolet ray light emitting element 10, in which free exciton recombination emission peak intensity in emission by current injection is larger than double of another emission peak strength; and a reaction layer 991 which includes a feed pipe 992, a drainage pipe 995, and an exhaust pipe 996. The n-type diamond crystal is a diamond crystal to which phosphorus or sulfur is added. The p-type semiconductor diamond crystal is a diamond crystal to which boron is added, and the concentration of boron in the crystal is ≤100 ppm. The diamond structure diamond ultraviolet ray light emitting element 10 is arranged in the reaction layer 99. COPYRIGHT: (C)2007,JPO&INPIT

37. 发明专利

JP2001249040A FLUID DETECTING SENSOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001249040A
公开(公告)日：2001-09-14
申请号：JP2000060645
申请日：2000-03-06
申请人： OMRON TATEISI ELECTRONICS CO , TOKYO GAS CO LTD
发明人： FUJIWARA TAKASHI , SASAKI AKIRA , NAKAMURA KENICHI , KONDA NORIHIRO
IPC分类号： G01F1/68
摘要： PROBLEM TO BE SOLVED: To reduce the resistance value of a heater, to generate heat largely, to increase the Seebeck coefficient of a thermopile and to enhance the sensitivity of a fluid detecting sensor (a gas flow sensor) which is used to detect the flow rate of a fluid such as a gas or the like. SOLUTION: The heater 36 which is composed of polysiliocn is formed on the surface of a thin filmlike bridge part 35, and thermopiles 37, 38 are arranged on both sides of it. The thermopiles 37, 38 are constituted of thin wires composed of polysilicon and aluminum. The heater 36 and the polysilicon thin wires 41 of the thermopiles 37, 38 are doped with P (phosphorus) by an ion implantation operation or the like, and the doping amount of the heater 36 is set to be larger than that of the polysilicon thin wires 41.

38. 发明专利

JP2000304720A CARBON MONOXIDE SENSOR 失效
公开(公告)号：JP2000304720A
公开(公告)日：2000-11-02
申请号：JP11380399
申请日：1999-04-21
申请人： TOKYO GAS CO LTD , YAZAKI CORP
发明人： NAKAMURA KENICHI , TANDA RYOJI , MOCHIZUKI KAZU , TAKASHIMA HIROMASA
IPC分类号： G01N27/409 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To make accurately detectable the concentration of carbon monoxide by bringing only a gas to be inspected through an anti-poisoning gas layer with a plurality of specific anti-poisoning gas material into contact with a solid-electrolyte sensor element. SOLUTION: The anti-poisoning gas layer 13 has at least one type out of granular silica gel, zirconia, ultra-stable zeolite, molecular sieve 5A, and powdered α-alumina. The layer is preferably as thick as 5-20 mm in the granular ultra-stable Y-type zeolite, 10 mm or longer in the granular silica gel, 10 mm or longer in the granular molecular sieve 5A, and 15 mm or longer in the granular zirconia. with a granular diameter of 50 mesh or larger and 2 mesh or less, a sufficient effect can be obtained, and the layer thickness is appropriately adjusted according to the effect and sensitivity. The layer is preferably as thick as 15 mm or longer and 20 mm or less in the case of the powered α-alumina. The anti-poisoning gas layer 13 is provided at the upper portion of a sensor cap 1, the upper and lower portions are covered with a mesh, and an anti- poisoning gas material is filled into the inside.

39. 发明专利

JP2000274662A INDUCTION PATH 失效
公开(公告)号：JP2000274662A
公开(公告)日：2000-10-03
申请号：JP8229399
申请日：1999-03-25
申请人： TOKYO GAS CO LTD , OMRON TATEISI ELECTRONICS CO , GASTAR CORP
发明人： NAKAMURA KENICHI , KONDA NORIHIRO , NOZOE SATOSHI , SASAKI AKIRA , KONDO MASATO , SHIGEOKA TAKUJI , EDA AKITO
IPC分类号： F23L1/00
摘要： PROBLEM TO BE SOLVED: To provide an induction path which leads the gas being the target of measurement to a sensor in condition that needless substance such as rubbish, dust, etc., are removed properly, and also does not produce pulsation in sensor output even in a high flow rate region. SOLUTION: This induction path is equipped with narrow passages 31-35 for raising the flow velocity of gas, and sedimentation chambers 21-25 forming hollow rectangular parallelepipeds for settling the needless substance in gas. The outlet of the narrow passage is opened, being biased to either the right or the left of one sidewall of the sedimentation chamber, and the outlet for the gas from the sedimentation chamber is opened in the sidewall on the side farther from the outlet of the narrow passage out of the sidewall vertical to one sidewall where the outlet of the narrow passage is opened, and also the position of it opening is set in a position separated enough from the sidewall opposed to the previous one sidewall. Hereby, the gas passes in a wide range within the sedimentation chamber, changing its flow direction by 90 deg. until it gets out of the sedimentation chamber after its entry, so the place of sedimentation of needless substance is widened, and the sedimentation chamber is utilized effectively.

40. 发明专利

JP2000019151A SOLID ELECTROLYTE TYPE CO SENSOR 失效
公开(公告)号：JP2000019151A
公开(公告)日：2000-01-21
申请号：JP18607998
申请日：1998-07-01
申请人： TOKYO GAS CO LTD , YAZAKI CORP
发明人： TANDA RYOJI , NAKAMURA KENICHI , MOCHIZUKI KAZU , TAKASHIMA HIROMASA
IPC分类号： G01N27/409 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To make a CO sensor mountable on a miniaturized hot water feeder without providing a special storage chamber by constituting the CO sensor to come into contact with gas through a gas diffusion control layer. SOLUTION: In this CO sensor, an alumina insulating film 15 is laminated on the surface of an alumina base 16 with a heater. and a thin film of a combustible gas oxidized catalyst 14 is laminated on its upper face. A thin film of solid electrolyte 12 is laminated on the upper face of an electrode 13 laminated on the upper face of the thin film, and an electrode 11 is laminated on its upper face. Both electrodes and the solid electrolyte 12 are covered with an inert propous layer 17 serving as a diffusion control layer. A CO detecting device with this CO sensor 1 built therein is mounted on a hot water feeder. Combustion exhaust gas generated in a burner 5 is exhausted to a flue 9 from an exhaust port 7 of a hot water feeder body 3 together with air blown in by a fan 4 and detected by the CO sensor 1 provided in the flue 9, through the porous layer 17. The CO detecting device 2 processes the output of the CO sensor 1 and performs alarm sound output, cleaning treatment action and detected data display.

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