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31. 发明专利

JPS5215276A BILATERAL TYPE LIGHT SENSITIVE SOLIP STATE OSCILLATOR ELEMENT 失效
公开(公告)号：JPS5215276A
公开(公告)日：1977-02-04
申请号：JP9104775
申请日：1975-07-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , NAGOSHI YOSHIHIKO
IPC分类号： H01L29/66 , H01L21/331 , H01L29/73 , H01L31/10
摘要： PURPOSE:To make it possible to use the element on AC operation by causing it to oscillate at the two polarities of a voltage regardless of the applied voltage when it reccives the irradiation of a light due to the forward and reverse direction impurity layers formed in one conductive semicondustor.

32. 发明专利

JPS5923866A Formation of boron diffused layer 失效
标题翻译：形成BORON扩散层
公开(公告)号：JPS5923866A
公开(公告)日：1984-02-07
申请号：JP13402282
申请日：1982-07-31
申请人： Matsushita Electric Works Ltd
发明人： TOMONARI SHIGEAKI , ABE TOSHIROU , IITAKA YUKIO , TANAKA YOSHIMITSU
IPC分类号： C23C8/42 , H01L21/225
CPC分类号： H01L21/225
摘要： PURPOSE:To reduce the diffusion time in the next stage and to improve the performance of an element in the stage of diffusing boron into a wafer, by making the time in the initial diffusion stage longer thereby forming a diffused layer deeply and densely. CONSTITUTION:A wafer 10 formed successively with an epitaxial layer 7, a patterned oxidized film 9 and a borosilicate galss film 11 on a substrate 6 is prepared. The wafer 10 is heated for a long time (for example, 1,100 deg.C, 4hr) to diffuse boron from the borosilicate glass film onto the wafer 10, thereby forming a deep and dense boron diffused layer. The film 11 is removed to expose the film 9 in succession to the above-mentioned first diffusion stage. The boron is in succession diffused further into the wafer 10 by the 2nd diffusion to form the layer diffused with boron. The time required for the 2nd diffusion stage is thus reduced and the performance of the element is improved as well.
摘要翻译：目的：为了减少下一阶段的扩散时间，并且通过使初始扩散阶段中的时间更长，从而形成扩散层，使其深入和密集地形成扩散层，从而提高了将硼扩散到晶片中的元件的性能。构成：准备在衬底6上依次形成有外延层7，图案化氧化膜9和硼硅酸盐膜11的晶片10。将晶片10长时间（例如1100℃，4小时）加热以将硼从硼硅酸盐玻璃膜扩散到晶片10上，从而形成深而致密的硼扩散层。去除膜11以将膜9连续地暴露于上述第一扩散阶段。硼通过第二扩散进一步扩散进入晶片10，以形成用硼扩散的层。因此，第二扩散阶段所需的时间减少，并且元件的性能也得到改善。

33. 发明专利

JPS56122234A ZEROOCROSS TYPE CONTACTLESS RELAY 失效
公开(公告)号：JPS56122234A
公开(公告)日：1981-09-25
申请号：JP2602680
申请日：1980-02-29
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： FUKUSONO HIDEKI , ISHIGAMI YOSHIHISA , ABE TOSHIROU , IITAKA YUKIO , NISHIMURA HIROMI
IPC分类号： H03K17/13 , H03K17/78
摘要： PURPOSE:To prevent the malfunction, by inserting a transistor between the emitter of PPO (Photosensitive Pulse Oscillator) and the cathode of SCR and then putting a capacitor between the collector and the base of the said transistor. CONSTITUTION:When the single pulse is produced during a make of the power source, a part of the single pulse flows into the malfunction preventing capacitor CB to give a conduction to the transistor TR. Thus the gate current can be prevented from flowing to SCRSC. On the other hand, the PPO(P) has an oscillation in case the zero-cross type contactless relay ZR is turned on with an input of the input signal. The capacitor CB is charged with the first pulse to flow no trigger current to the SCR(SC). With the second pulse, the trigger current is flowed to the gate of the SCR(SC) through the resistance R4 not to the capacitor CB. The SCR(SC) is turned on in a normal way with supply of the trigger current.

34. 发明专利

JPS5665528A ZERO CROSS SOLIDSTATE RELAY 失效
公开(公告)号：JPS5665528A
公开(公告)日：1981-06-03
申请号：JP14218279
申请日：1979-10-31
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H03K17/13
摘要： PURPOSE:To prevent waste of power, by using a switch circuit controlling power supply to a zero voltage detection circuit. CONSTITUTION:The power supply to a zero voltage detection circuit 6 is controlled with a switch circuit 9. If no input signal is present, a light emitting diode 9a is not illuminated and a photothyristor 9c is nonconductive. In this case, no current flows to the circuit 6, then the waste of power can be prevented. If the input signal is present, the thyristor 9c is conductive and thyristors 5, 3 are conductive near the zero voltages of an AC power supply 1.

35. 发明专利

JPS55154824A ZEROOCROSS SOLID STATE RELAY 失效
公开(公告)号：JPS55154824A
公开(公告)日：1980-12-02
申请号：JP6360179
申请日：1979-05-22
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , IITAKA YUKIO
IPC分类号： H02M1/08 , H03K17/13 , H03K17/78
摘要： PURPOSE:To prevent SCR from malfunctioning by providing a zero-cross solid state relay circuit with a resistance connected between a light oscillating element and SCR and a Zener diode connected between the cathode of SCR and the emitter of the oscillating circuit. CONSTITUTION:Between the anode and gate of SCR5 constituting a zero-cross solid state relay, light oscillating element 6 irradiated with light from light emitting element 8 is provided, Zener diode 7 is connected between the gate of element 6 and the cathode of SCR5, and the parallel circuit of resistance 10 and capacitor 11 is further connected between the gate of SCR5 and its cathode. A relay circuit of this constitution is provided with resistance 12 connected between the gate of SCR5 and element 6 and Zener diode 13 connected between the emitter of element 6 and the cathode of SCR5. Then, diode 13 prevents element 6 in an OFF state from operating due to momentary potential variation such as a noise, etc., thereby preventing SCR5 from malfunctioning.

36. 发明专利

JPS55107326A OSCILLATION CIRCUIT 失效
公开(公告)号：JPS55107326A
公开(公告)日：1980-08-18
申请号：JP1485479
申请日：1979-02-09
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H03K3/02 , H03K3/335
摘要： PURPOSE:To enable the operation of activated power supply of high voltage, by connecting the collector, base and emitter of the transistor (Tr) to the power supply via respectively a resistor, and taking greater the power supply voltage than the avalanche voltage between the base and collector. CONSTITUTION:One side of the activated power supply is connected to the collector of TrQ1 via the resistor R1, and the base of TrQ1 is connected to another side of the power supply via the resistor R3 and the emitter is via the parallel circuit consisting of the resistor R2 and the capacitor C1. The power supply voltage E is set greater than the avalanche voltage VT between the base and the collector of TrQ1. The avalanche breakdown current flows from the collector to base of TrQ1, the potential of the base is higher than that of emitter, and the emitter current flows. Thus, the avalanche breakdown is accelerated and the emitter current increases more. When the C1 is charged with the emitter current, the emitter current is less and the breakdown current is decreased and finally the emitter current stops. When C1 discharges through R2, the emitter current flows again and this is repeated for oscillation. The power supply is of high voltage, allowing to increase the output voltage.

37. 发明专利

JPS5541024A PHOTO OSCILLATION CIRCUIT 失效
公开(公告)号：JPS5541024A
公开(公告)日：1980-03-22
申请号：JP11388778
申请日：1978-09-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H03K3/42
摘要： PURPOSE:To extend the range of incident photo strength to keep the oscillation, by providing a Zener diode and a capacitor between the negative power supply of the photo oscillation circuit consisting of NPN transistor Tr, PNPTr and photo diode, and NPNTr. CONSTITUTION:When incident light to the photo diode 4 is increased and the voltage drop consisting of the current in NPNTr1 and the resistor 8 is greater than the zener voltage of the Zener diode 5, back bias voltage is made between the emitter and the base of Tr1 to interrupt the collector current of Tr1. Thus, the voltage drop of the resistor 7 is avoided and the base potential of PNPTr2 is of the same potential as the positive electrode of the power supply 3, but the emitter of Tr2 is at lower potential than the base with the charging of the capacitor C6 and Tr2 does not turn on until C6 is finished for discharge with the photo current of the diode 4. Further, Tr1 does not turn on until the voltage across C9 is less than the Zener voltage. Tr1 and 2 are turned on, and this is repeated to cause oscillation state. The stop of oscillation is not caused even with strong incident light.

38. 发明专利

JPS5462767A CONTACTLESS RELAY 失效
公开(公告)号：JPS5462767A
公开(公告)日：1979-05-21
申请号：JP12952177
申请日：1977-10-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , IITAKA YUKIO
IPC分类号： H01H47/24 , H01H47/32 , H02M1/08
摘要： PURPOSE:To obtain a contactless relay with its NO contact and NG contact made contactless by turning a NO triode AC switch ON and a NG triode AC switch OFF near the zero power voltage. CONSTITUTION:Both NO triode AC switch 1 and NG triode AC switch 2 are connected to power supply 4 via loads 3a and 3b respectively; the gate signal of triode AC switch 2 is extracted from the connection point between load 3a and triode AC switch 1, and the power of control 5 which ignites triode AC switch 1 at the time of the inputting of external signal S is also extracted from the connection point between load 3b and triode Ac switch 2. Therefore, triode AC switch 2 turns ON by currents of resistances R1 and R2 when not signal S is inputted and turns OFF when the power voltage becomes zero first after signal S is inputted. Then, triode AC switch 7 turns ON when the power voltage becomes zero first after signal S is inputted and triode AC switch 2 turns OFF to apply voltages to power supply terminals (a) and (b). Therefore, any one causes neither a noise nor a surge and can be made contactless.

39. 发明专利

JPS5438749A SEMICONDUCTOR RELAY 失效
公开(公告)号：JPS5438749A
公开(公告)日：1979-03-23
申请号：JP10566877
申请日：1977-08-31
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , IITAKA YUKIO
IPC分类号： H01H47/24 , H01H47/32 , H02M1/08
摘要： PURPOSE:To obtain a semiconductor relay which constitutes an AC relay featuring the normal open and the normal close actions.

40. 发明专利

JPS53128970A SWITCH 失效
公开(公告)号：JPS53128970A
公开(公告)日：1978-11-10
申请号：JP4536977
申请日：1977-04-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H02M1/08 , H01H9/54 , H01H9/56
摘要： PURPOSE:To obtain a switch which is capable of the ON/OFF control in response to the application voltage through a simple circuit.

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