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31. 发明专利

JPH0575102A QUANTUM ELEMENT 失效
公开(公告)号：JPH0575102A
公开(公告)日：1993-03-26
申请号：JP23458791
申请日：1991-09-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAI YOSHIHIKO , TERUI YASUAKI , YASUI JURO , NIWA MASAAKI , OKADA KENJI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/66 , H01L29/06 , H01L29/861
摘要： PURPOSE:To amplify an output current and to increase a driving force by providing a P-N junction to be reversely biased at an output end of a quantum element. CONSTITUTION:A reversely biased P-N junction is bonded to an output end of a quantum element 11 in which electrons are provided as signal transfer carrier. The electrons output from the output end are amplified by an avalanche breakdown in a depleted layer of the P-N junction, and an output current is amplified. Incidentally, the element 11 may have a structure in which holes are provided as carrier and a P-N junction semiconductor reversely biased to the output end of the element is connected. Thus, a driving force can be increased.

32. 发明专利

JPH0575094A MANUFACTURE OF QUANTUM DEVICE 失效
公开(公告)号：JPH0575094A
公开(公告)日：1993-03-26
申请号：JP23280391
申请日：1991-09-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To make it possible to farm a quantum device which scarcely scatters electron by forming grooves by etching a given area on a single-crystal silicon thin film on an isolating film by of a converged iron beam with subsequent oxidation. CONSTITUTION:A silicon oxide 2 and a single-crystal silicon 3 are laminated on a silicon substrate 1. A resist 4 is formed on it in a given configuration. Then, with this resist 4 as a mask, a silicon edge line 5 is obtained by anisotropically etching the silicon substrate 1, silicon oxide film 2, and single- crystal silicon 3. Then, an isolating oxide film 8 is formed in a grooved part 7 thereby to obtain the quantum dots 9 and quantum fine lines 10 isolated or connected by this isolating oxide film 8. Hence, it is possible to easily form the quantum device which scarcely scatters electron.

33. 发明专利

JPH0555545A MANUFACTURE OF QUANTUM ELEMENT 失效
公开(公告)号：JPH0555545A
公开(公告)日：1993-03-05
申请号：JP21520491
申请日：1991-08-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L21/20 , H01L21/335 , H01L27/12 , H01L29/12
摘要： PURPOSE:To provide a manufacturing method for a quantum thin line and a quantum element consisting of quantum dots which is sandwiched between quantum thin line by way of an insulating film. CONSTITUTION:A resist 4 having a specified shape is formed on a silicon substrate 1, a silicon oxidized film 2 and a single crystal silicon 3. The single crystal silicon 3 is etched to form a quantum dot 5. By thermal oxidization, an oxidized film 6 is formed around the quantum dot 5. A poly crystalline silicon film 7 is deposited and etching back is executed. By using laser beam 8, a specified area of the poly crystalline silicon film 7 is made to be a single crystal so as to obtain single crystallized silicon 9. Finally, the polycrystalline silicon film 7 and the single crystallized silicon 9 are etched into a specified shape so as to obtain a quantum thin line 10.

34. 发明专利

JPH04152673A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04152673A
公开(公告)日：1992-05-26
申请号：JP28006690
申请日：1990-10-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORIMOTO TADASHI , WADA ATSUO
IPC分类号： H01L27/00 , H01L27/146
摘要： PURPOSE:To enable a photosensitive layer and a light shielding layer to be formed at the same time so as to simplify a semiconductor device in manufacturing process by a method wherein a second metal serving as a lower electrode of the photosensitive layer or/and an amorphous Si film film are used also as a light shielding layer. CONSTITUTION:A first metal of alloy of aluminum and silicon is deposited on a layer insulating film 11, and a signal lead-out electrode 12 and a wiring 13 of an active layer are formed. Then, the layer insulating film 11 is deposited again so as to make the surface flat. Finally, a second metal 14 of Cr or the like and an amorphous Si film 15 are deposited on the layer insulating film 11, and a patterning process is carried out. In a non-photodetective region, the second metal 14 and the amorphous Si film 15 are formed into a pattern which is reverse to the pattern of the signal lead-out electrode 12. The second metal 14 of Cr or the like formed on an active layer 10 is made to function as the lower electrode of the photosensitive layer, and the amorphous Si film 15 is made to serve as the photoelectric conversion layer of the photosensitive layer. On the other hand, the second metal 14 of Cr and the amorphous Si film 15 formed on a part other than the active layer 10 are made to serve as a light shielding film.

35. 发明专利

JPH0485950A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0485950A
公开(公告)日：1992-03-18
申请号：JP20208290
申请日：1990-07-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORIMOTO TADASHI , WADA ATSUO
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/52 , H01L23/522 , H01L23/538 , H01L27/04 , H01L27/146
摘要： PURPOSE:To obtain a high optical sensor characteristic by laminating a metal hard to be corroded by buffer hydrofluoric acid liquid continuously on an alloy of aluminum and silicon. CONSTITUTION:Al-Si 12 as an in-layer wiring material is laminated on an active layer 11 consisting of a MOS transistor etc., by the sputtering method or other methods. A thin metal 13, such as Mo and Cr, hard to be corroded by buffer hydrofluoric acid liquid is laminated continuously to make a wiring pattern. A layer insulating film 14 is formed and steps are flattened by the etch back method. A transistor characteristic and a contact characteristic, which are decreased by the process of formation of the active layer 11, are recovered by heat treatment in a hydroge atmosphere. A mask 16 is made on the layer insulating film 14 and a window 15 for an inter-layer wiring is made by etching with buffer hydrofluoric acid liquid. The lower electrode 17 of an optical sensor layer is made of Cr, Mo, etc., an a-Si:H layer 18 is formed, and the upper electrode 19 of the optical sensor layer is made of ITO etc. Thereby the upper optical sensor layer can be provided with a high characteristic.

36. 发明专利

JPH03292766A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03292766A
公开(公告)日：1991-12-24
申请号：JP9573490
申请日：1990-04-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORIMOTO TADASHI , WADA ATSUO
IPC分类号： H01L21/3205 , H01L21/768 , H01L27/00
摘要： PURPOSE:To enable metal used for an interlayer wiring to be selectively buried in an opening high in selectivity by a method wherein phosphorus or boron ions are implanted into all the surface of an insulating film deposited on a first metal layer, an opening ia provided to the insulating layer through etching, and a second metal is selectively grown inside the opening concerned through a chemical vapor growth. CONSTITUTION:An insulating film 2 such as an oxide film or the like is deposited on a titanium silicide film 1 which serves as a wiring material of an lower integrated circuit element layer 100, and an upper integrated circuit element layer consisting of, for instance, a MOS transistor 4 is formed thereon. Thereafter, phosphorus or boron ions are implanted. At this point, a highly doped layer is formed on the surface of the insulating layer 2. Then, an opening is provided to the insulating film 2 through an etching mask to provide an interlayer wiring opening 20, and the surface of the titanium silicide film 1 is exposed. Lastly, a metal 5 of tungsten or the like used for an interlayer wiring is selectively grown in the opening 20. At this point, as phosphorus or boron ions have been implanted into the surface of the insulating layer 2, the metal 5 is hardly grown on the surface of the insulating film 2.

37. 发明专利

JP2001313342A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001313342A
公开(公告)日：2001-11-09
申请号：JP2000167391
申请日：2000-06-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHII SHIGEO , MORIMOTO TADASHI , MORITA KIYOYUKI , SORADA HARUYUKI
IPC分类号： H01L21/283 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a reliable semiconductor device that can be easily manufactured. SOLUTION: On a p-type silicon substrate 1011, a fine particle diffusion region 1012, an SiO2 film 1015 functioning as an insulating film, and an n-type polycrystalline silicon electrode 1016 functioning as an upper electrode are provided in the order of lower part. Also in a charge retention region 1012, a silicon fine particle 1013 is diffused in the SiO2 film 1014 functioning as an insulator. In this manner, in the semiconductor device, by having the fine particle diffusion region 1012 where the silicon fine particle 1013 is diffused in the SiO2 film 1014 provided, the need for controlling the thickness of a tunnel oxide film and particle diameter of a particle body is eliminated as in a conventional semiconductor device, effectively inhibiting the spontaneous emission of accumulated electrons, and hence achieving a new semiconductor device of high reliability that can be manufactured easily.

38. 发明专利

JP2001237290A ANALYZING METHOD FOR SEMICONDUCTOR 失效
公开(公告)号：JP2001237290A
公开(公告)日：2001-08-31
申请号：JP2000048731
申请日：2000-02-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORIMOTO TADASHI , MORITA KIYOYUKI , YOSHII SHIGEO , SORADA HARUYUKI
IPC分类号： G01N1/28 , G01Q60/10 , G01Q60/24 , G01Q80/00 , H01L21/316 , H01L21/66 , G01N13/12 , G01N13/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor analyzing method without requiring a conventional expensive electronic microscope to which EBIC image measuring function is added and which has a defect having a possibility to give a damage to a material during measurement. SOLUTION: A construction stability of an electric field supporting film which is formed by using a low cost scanning probe is greatly dependent on a substrate conductive type. This analyzing method is provided with a step of performing an electric field supported oxidation by a scanning probe microscope which is provided with a conductive probe on a base unit having a (p) type conductive region and an (n) type conductive region, and a step of specifying a p-n junction position by measuring a surface irregularity after a thermal processing.

39. 发明专利

JP2001119034A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001119034A
公开(公告)日：2001-04-27
申请号：JP29952499
申请日：1999-10-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YUKI KOICHIRO , KUBO MINORU , MORIMOTO TADASHI , MORITA KIYOYUKI
IPC分类号： H01L27/11 , H01L21/8244 , H01L29/786 , H01L29/94
摘要： PROBLEM TO BE SOLVED: To provide a MOS-type transistor that has a small element area and operates at a high speed, a resonance tunnel element, and an SRAM where they are combined. SOLUTION: An Si layer in a shape, erected for a silicon substrate surface, is formed on an SOI substrate by a shift mask and crystal anisotropy etching. Then, an epitaxial layer is formed on a surface by the UHV-CVD, and the barrier structure is formed between MOS channels and resonance tunnel elements.

40. 发明专利

JPH10242141A DEVICE AND METHOD FOR FORMING FINE OXIDE FILM PATTERN 失效
公开(公告)号：JPH10242141A
公开(公告)日：1998-09-11
申请号：JP4778697
申请日：1997-03-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARAKI SEI , MORIMOTO TADASHI , MORITA KIYOYUKI , YUKI KOICHIRO , SORADA HARUYUKI
IPC分类号： H01L29/06 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To form an electric field supporting oxide film on a substrate even when the surface of the fine pattern forming area of the substrate electrically floats and, at the same time, to quickly and accurately observe the surface of the formed electric field supporting, oxide film. SOLUTION: In a fine oxide film pattern forming device, the sample 13 of an SOI substrate on which a fine pattern composed of an electric field supporting film is formed is placed on a stage 12 which is controlled by means of the stage control circuit of a stage supporting section 11. The forming device is provided with a cantilever 15 which is moved on the surface of the sample 13 under the control of the control station 14 and a probe 16 which can freely move on the surface of the sample 13 and electrically connects the cantilever 15 to the vicinity of the fine pattern forming area on the surface of the sample 13.

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