专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09283399A X-RAY EXPOSING APPARATUS 失效
公开(公告)号：JPH09283399A
公开(公告)日：1997-10-31
申请号：JP8617396
申请日：1996-04-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARAKI SEI
IPC分类号： G21K5/02 , G03F7/20 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the superposition accuracy of patterns even if the chip size becomes large, by aligning the positions of simultaneously mounted X-ray masks at specified superposition accuracy and transferring one chip by a plurality of small X-ray masks. SOLUTION: X-ray masks A (XA) 11 and B (XA) 12 are mounted on a mask rough-adjusting stage 13. A mask stage drive system moves the masks XA11 and XB11 mounted so that the positions of the XA11 and XB12 can be recognized to specified positions according to alignment masks A(AA) 16 and B(AB) 17 and an X-ray mask alignment system 18 recognizes the respective positions, using positioning masks AA16, AB17. The drive system moves mask inching stages 14, 15 for XA11, XB12 to slightly change the positions and again moves the XA11, XB12 to specified positions, thus recognition of respective positions is effected.

2. 发明专利

JPH06291024A FORMATION OF FINE PATTERN 失效
公开(公告)号：JPH06291024A
公开(公告)日：1994-10-18
申请号：JP7549693
申请日：1993-04-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARAKI SEI , YASUI JURO
IPC分类号： G03F7/26 , G03F7/20 , G03F7/38 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form a fine resist pattern whose aspect ratio is high so that the resist pattern does not fall in a developing process. CONSTITUTION:A resist layer 13 is formed on a material 12 to be worked, and a desired region in which a fine pattern is formed is irradiated with ultraviolet rays or far-ultraviolet rays 14. Thereby, a slightly soluble layer 15 with reference to a developer is formed in the surface layer part of the resist layer 13. Then, a desired fine pattern is exposed to X-rays 16, and a developing treatment is executed.

3. 发明专利

JPH0677118A POSITION DEVIATION DETECTION METHOD ND ALIGNER 失效
公开(公告)号：JPH0677118A
公开(公告)日：1994-03-18
申请号：JP22688092
申请日：1992-08-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YASUI JURO , ARAKI SEI
IPC分类号： G03F9/00 , H01L21/027 , H01L21/68
摘要： PURPOSE:To accurately detect a position deviation by applying a laser beam for alignment which is applied from a diagonal direction to a mask surface to the alignment mark consisting of a rectangular pattern arrangement and detecting the position deviation using diffraction light toward the incidence side by the alignment mark. CONSTITUTION:A laser beam 6 introduced by an incidence optical system 5 is shed on alignment marks 3 and 4 at an angle being slanted by 12 degrees from a normal direction to a mask surface, generating diffraction light by the alignment marks 3 and 4. Diffraction lights 7 and 8 diffracted at an angle of approximately 21 degrees at the same side of the incidence light 6 for the normal direction of the mask out of the diffraction lights are detected by detection optical systems 9 and 10 which are formed in one piece with an incidence optical system 5. The phases of the detected diffraction light are compared, thus detecting the amount of position deviation between an Si wafer 1 and an X-ray mask.

4. 发明专利

JPH1012859A METHOD FOR FORMING FINE OXIDE PATTERN 失效
公开(公告)号：JPH1012859A
公开(公告)日：1998-01-16
申请号：JP16135196
申请日：1996-06-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARAKI SEI , MORIMOTO TADASHI , MORITA KIYOYUKI , YUKI KOICHIRO
IPC分类号： G01N37/00 , G01Q60/10 , G01Q60/24 , G01Q80/00 , H01L21/027 , H01L21/316 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To make the width of a fine oxide film or oxide film pattern independent of the place by correcting the probe speed during writing so that the line density of an applied voltage or current per unit time, contributing to the oxidation, is const. SOLUTION: A pattern is formed, without dispersion of the heights at cross points 41 of oxide lines. The line density of an applied voltage per time contributing the oxidation is set. About the positions of oxidizing regions, the probe speed at writing position is corrected and determined. An electrolysis-assisted oxidation is executed according to the determined probe speed at positions. This makes the width of a fine oxide film or oxide film pattern independent of the place.

5. 发明专利

JPH09283772A RESONANCE TUNNEL DIODE AND FORMING METHOD THEREOF 失效
公开(公告)号：JPH09283772A
公开(公告)日：1997-10-31
申请号：JP9235296
申请日：1996-04-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YUKI KOICHIRO , MORITA KIYOYUKI , HIRAI YOSHIHIKO , MORIMOTO TADASHI , UENOYAMA TAKESHI , ARAKI SEI
IPC分类号： H01L29/66 , H01L29/88
摘要： PROBLEM TO BE SOLVED: To obtain a resonance tunnel diode forming method which is well matched to the Si process and formed at low cost by forming a laminate structure composed of a Si, silicide, silicon oxide films and polysilicon or metal layer. SOLUTION: A silicide 12 of 5nm, silicon oxide film layer 13 of 2nm and polysilicon electrode 14 are laminated on the surface of a Si substrate 11. All the laminated fibers are etched into a mesa type. It is operable as a two- terminal resonance tunnel diode between the substrate 11 and polysilicon electrode 14. This realizes a double barrier structure of the resonance tunnel diode, using the prior art Si process, and hence a low-cost and good-performance resonance tunnel diode can be formed with little dispersion.

6. 发明专利

JPH09283748A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09283748A
公开(公告)日：1997-10-31
申请号：JP8617596
申请日：1996-04-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORITA KIYOYUKI , MORIMOTO TADASHI , ARAKI SEI , YUKI KOICHIRO
IPC分类号： H01L29/78 , H01L21/306 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of forming the gate electrode of a fine MOS Tr easily and stably without dispersion. SOLUTION: A gate oxide film 103 and an epitaxial film 204 are made on a p-type Si substrate 101. A mask oxide film 205 is made at one part of the epitaxial film 204. The p-type 'Si substrate 101 is installed for three minutes in the mixed aqueous solution of ethylene diamine and pyrocatechol at 80 deg.C. Other than the region protected by a mask oxide film 205 is etched off, and a gate electrode 104 is made. The etching speed of face is lower than other face azimuth in the mixed aqueous solution of ethylene diamine and pyrocatechol, so the width of the gate electrode 104 becomes uniform, and besides the side face of the gate electrode 104 becomes smooth, too.

7. 发明专利

JPH06283414A FORMATION OF RESIST PATTERN 失效
公开(公告)号：JPH06283414A
公开(公告)日：1994-10-07
申请号：JP6959993
申请日：1993-03-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YASUI JURO , ARAKI SEI
IPC分类号： H01L21/027 , H01L21/26
摘要： PURPOSE:To form a fine resist pattern which is hardly broken and fell down and whose aspect ratio is large. CONSTITUTION:A resist film 3 formed on the surface of an Si board 1 is exposed. After it is developed for the formation of a resist pattern 13, the pattern 13 is irradiated with far ultraviolet rays 7 without releasing a rinsing liquid from the surface of the board 1 in order to deteriorate the surface of the pattern 13. Thus the mechanical strength thereof is increased and the stress at the time of releasing the developing liquid 5 and rinsing liquid 5 is decreased. Therefore, even while the developing liquid 5 and rinsing liquid 5 are released/dried, the resist pattern 13 is hardly broken and hardly fall down.

8. 发明专利

JPH05206015A X-RAY MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05206015A
公开(公告)日：1993-08-13
申请号：JP25927692
申请日：1992-09-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YASUI JURO , ARAKI SEI
IPC分类号： G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the accuracy or positional deviation detection due to primary reflected and diffracted light by eliminating alignment light reaching a semiconductor substrate after transmitting through the alignment mark of X-ray mask. CONSTITUTION:An X-ray transmitting film 2 made of SiN film is formed on the surface of a supporting body 1, an LSI pattern 3 and an alignment mark 4 comprising a projected portions 4a and a recessed portion 4b are formed on the surface of the x-ray transmitting film 2. A visible light reflecting lattice pattern 5 comprising a W film is formed on the surface of the projected portion 4a of the alignment mark 4, and a metallic film 7 made of W film is formed on the surface of the recessed portion 4b of the alignment mark 4. By doing this, laser beam 13 will not reach the semiconductor substrate 30 after transmitting through the alignment mark 4, therefore, unwanted reflected light from the semiconductor 30 will not be mixed in when detecting the primary reflected and diffracted light 14 from the alignment mark 4.

9. 发明专利

JP2003203141A COMMODITY INFORMATION MANAGEMENT DEVICE 审中-公开
公开(公告)号：JP2003203141A
公开(公告)日：2003-07-18
申请号：JP2002309169
申请日：2002-10-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARAKI SEI , YAMAMOTO SHIGEO , HORIKAWA HARUMI , KAWADA SATOSHI , MARUTA KAYOKO , OKADA MASUMITSU , MURATA KENICHI , TAKEMOTO MASAYO
IPC分类号： G06Q10/00 , G06Q30/02 , G06Q50/00 , G06Q50/10 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a WWW page for a commodity questionnaire allowing user's easy use and easy collection of commodity information for an enterprise. SOLUTION: My-page management server 100 provides users registered as members with my-page which is user's individual WWW page. It is provided with a commodity registration part 110 for obtaining information of commodity purchased by the user, a link generation part 112 for generating a link to the commodity questionnaire related to the commodity purchased by the user on user's my-page, and a commodity questionnaire management part 113 for presenting the commodity questionnaire to link destination for the user when receiving a transmission demand for the commodity questionnaire from the user. COPYRIGHT: (C)2003,JPO

10. 发明专利

JPH11233752A METHOD FOR FORMING DOT BODY AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11233752A
公开(公告)日：1999-08-27
申请号：JP33895298
申请日：1998-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORITA KIYOYUKI , MORIMOTO TADASHI , ARAKI SEI , YUKI KOICHIRO , ADACHI KAZUYASU , ENDO MASATAKA , YAMASHITA ICHIRO
IPC分类号： H01L21/8247 , B82B1/00 , G11C13/02 , H01L27/10 , H01L29/06 , H01L29/66 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To obtain a high-performance semiconductor element by forming a dot body with a desired size that functions as a quantum dot body at a desired position on a substrate. SOLUTION: In a method for forming a dot body, ultraviolet rays 104 are selectively applied to a Rat IgG antibody film 102 being formed on a p-type Si substrate 101, and a Rat IgG antibody film 102 is left only at a region other than one that becomes a deactivated Rat IgG antibody film 105. Then, when the p-type Si substrate 101 is installed in a solution containing an Au fine particle 106 that is combined with a Rat IgG antigen 107, the Rat IgG antigen 107 and the Rat IgG antibody film 102 are selectively combined, and an Au fine particle 106 that is combined with the Rat IgG antigen 107 is immobilized on the Rat IgG antibody film 102. After that, the p-type Si substrate 101 is installed in oxygen plasma for 20 minutes, the Rat IgG antibody film, deactivated Rat IgG antibody film 105, and Rat IgG antigen 107 being formed on the p-type Si substrate 101, and a dot body 110 is formed at a desired position on the p-type Si substrate 101.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式