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31. 发明专利

JPH0877957A CHARGED PARTICLE PROJECTOR 失效
公开(公告)号：JPH0877957A
公开(公告)日：1996-03-22
申请号：JP21237694
申请日：1994-09-06
申请人： HITACHI LTD
发明人： KAWANAMI YOSHIMI , MADOKORO YUICHI , UMEMURA KAORU , HAYATA YASUNARI , KURODA KATSUHIRO
IPC分类号： H01J37/12 , H01J37/153 , H01J37/305 , H01L21/027
摘要： PURPOSE: To substantially eliminate image strain of a mask projected on a sample up to five order of the aperture ratio by providing a projecting lens by only a single stage in a projecting optical system, and providing a radiating lens in a radiating optical system so as to focus a charged particle beam on the almost center of the projecting lens. CONSTITUTION: An ion beam 2 pulled out of an ion source 1 is irradiated to a mask 4 while converging the ion beam 2 so that an image of the ion source is formed in about one time by a radiating lens 10 of a radiating optical system 3. The ion beam 2 passing through the mask 4 is focused on the almost center of a single stage projecting lens 20 of a projecting optical system 6, and the image of the mask 4 is formed on a sample 7 in about 1/8 time. Therefore, image strain of the mask 4 projected on the sample 7 can be made extremely small, and the sample 7 can be worked with high accuracy.

32. 发明专利

JPH0850874A CHARGED PARTICLE PROJECTION METHOD AND DEVICE 失效
公开(公告)号：JPH0850874A
公开(公告)日：1996-02-20
申请号：JP18808594
申请日：1994-08-10
申请人： HITACHI LTD
发明人： KAWANAMI YOSHIMI , UMEMURA KAORU , MADOKORO YUICHI
IPC分类号： H01J37/04 , H01J37/09 , H01J37/147 , H01J37/305
摘要： PURPOSE:To provide means to shorten the time needed to change a mask in a charged particle projection device. CONSTITUTION:A pattern divided into a plurality of blocks is arranged on a mask 4, and the place of the block is changed by moving the pattern step by step with a stage 5. The position displacement of the mask 4 detected by a length measureing system 52 of the stage in the change operation is corrected on a sample by deflecting a charged particle beam with a position correction deflecting device 68. The changing job of the mask 4 is omitted, and a throughput of working is enhanced.

33. 发明专利

JPH06260124A CONVERGENT CHARGED PARTICLE BEAM DEVICE 失效
公开(公告)号：JPH06260124A
公开(公告)日：1994-09-16
申请号：JP3963393
申请日：1993-03-01
申请人： HITACHI LTD
发明人： KAWANAMI YOSHIMI , MADOKORO YUICHI , MOCHIJI KOZO , ONO TETSUO
IPC分类号： H01J37/09
摘要： PURPOSE:To prolong the lifetime of a throttle plate to a great extent and enhance the rate of service time of a convergent charged particle beam device by furnishing a device to supply the surface of the throttle plate with a gas for decomposition and deposition by means of ion irradiation so that sputters due to the irradiation of throttle plate with ions are canceled. CONSTITUTION:Powder of tungsten carbonyl W(CO)6 as the material for gas is placed in a reservoir 19, heated to approx. 60 deg.C by a heater 20, and sublimated. A valve 18 is opened in synchronization with emission of ions 6 by a control system, and heat is absorbed to the surface of a throttle plate 13 from the tip of a nozzle 17, and decomposition is made only in the portion which is irradiated with the ions 6, and tungsten is deposited. Using the temp. of the heater 20 the control system controls the rate of flow of the gas 16 so that the deposited amount of tungsten and the amount of sputters of the throttle plate 13 set off each other approximately. Because the perfect offset can not be obtained, however the rate of gas flow is lessened to a certain degree so that sputtering is made little by little. The lifetime of the throttle plate can be prolonged to a great extent accordingly.

34. 发明专利

JPH06252233A PROCESSING METHOD AND APPARATUS BY FOCUSED ION BEAM 失效
公开(公告)号：JPH06252233A
公开(公告)日：1994-09-09
申请号：JP3506793
申请日：1993-02-24
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , UMEMURA KAORU , KAWANAMI YOSHIMI
IPC分类号： H01J37/30 , H01L21/203 , H01L21/28 , H01L21/66
摘要： PURPOSE:To prevent a buried portion in a connection hole from being broken and made high resistance by changing the shape of the hole or altering scanning conditions for optimization of the shape of the hole. CONSTITUTION:A cutout 1 is formed in the direction of a nozzle 4 to promote the entrance of gas into a hole. More specifically, a connection hole 2 is formed with sputtering and then tungsten carbonyl is introduced through the nozzle 4 as reaction gas, and the connection hole 2 is buried by a focused ion beam induction deposition method using the same beam. It is noticed that in the case of the connection hole 2 it should not make contact with any wiring adjoining thereto, and hence the shape and size of the hole are limited. Accordingly, with the formation of the cutout 1 facilitating the entrance of gas, a gas flow flux in the connection hole 2 is raised. It is of course that the cutout 1 directed toward the nozzle 4 more increases the efficiency.

35. 发明专利

JPH0697084A BEAM INDUCTION PROCESS APPARATUS 失效
公开(公告)号：JPH0697084A
公开(公告)日：1994-04-08
申请号：JP24617792
申请日：1992-09-16
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , TAKAHASHI YOSHIO , KAWANAMI YOSHIMI , UMEMURA KAORU
IPC分类号： H01L21/205 , H01L21/302
摘要： PURPOSE:To implement a sufficient process speed regardless of a relative position relation of a gas pressure distribution to a beam scanning range by specifying an angle to a processed sample surface of an opening surface of a nozzle for beam induction process for introducing a reactant gas into a processed surface. CONSTITUTION:In a focused ion beam deposition method or a focused ion beam induction etching method, an angle to a processed sample surface 5 of an opening surface of a nozzle 1 for beam induction process for introducing a reactant gas into the processed surface 5 is set to 60 to 80 degrees. In the angle range, a gas pressure distribution 2 on the sample has a good uniformity and a large pressure value can be obtained in the range of beam irradiation without increasing a gas flow as compared with the case of an angle setting other than above angle. Also, since the uniformity of the distribution is excellent, the change in distribution to the slight deviation from a nozzle angle or a set point of distance is small and the margin to a set error can be increased.

36. 发明专利

JPH05159960A MANUFACTURE OF MAGNETIZED FILM 失效
公开(公告)号：JPH05159960A
公开(公告)日：1993-06-25
申请号：JP32422391
申请日：1991-12-09
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , UMEMURA KAORU , KAWANAMI YOSHIMI
IPC分类号： G11B5/85 , G11B5/852 , H01F41/14 , H01F41/22 , H01J37/317 , H01L21/265 , H01L21/268 , H01L21/66
摘要： PURPOSE:To simply manufacture a finely patterned magnetized film by employing a focused ion beam induction depositing method for depositing in a gas atmosphere including ferromagnetic metal while scanning a beam on a board. CONSTITUTION:Ions emitted from a liquid metal ion source 1 are focused by an electrostatic lens 2 to form a beam on a board 4. Gas of compound including metal to become ferromagnetic material is supplied by a nozzle 9 to the surface of a sample to form a gas atmosphere of a high pressure locally on the surface of the sample. The ions heated to 10keV of energy number are scanned in a desired pattern state by a deflector 3, gas absorbed to the surface of the sample is decomposed, and metal in the gas is deposited. A coil 6 is wound on a sample base 5 of an integrated ion beam unit so that the board is disposed in a uniform magnetic field. Thus, a finely magnetized film can be simply formed, and a time required for manufacturing and its cost can be reduced. Further, performance of an integrated circuit in which the film is applied can be enhanced.

37. 发明专利

JPH04131377A FILM FORMING METHOD 失效
公开(公告)号：JPH04131377A
公开(公告)日：1992-05-06
申请号：JP25016390
申请日：1990-09-21
申请人： HITACHI LTD
发明人： TAKAHASHI YOSHIO , ISHITANI TORU , MADOKORO YUICHI , ONISHI TAKESHI , KAWANAMI YOSHIMI , UMEMURA KAORU
IPC分类号： C23C16/48 , H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To form a film which has the high adhesive power to a substrate, i.e., is hardly peelable while maintaining the small specific resistance of a deposited film by setting the beam conditions for film formation in such a manner that the deposition rate is high in the initial period of growth but decreases thereafter. CONSTITUTION:The deposition rate is increased in the initial stage of film deposition to form the film having the large contact area with the substrate, i.e., high adhesive power and thereafter, the deposition rate is decreased after the uniform film structure is attained, by which the film having the smaller specific resistance is formed as the 1st means. While the specific resistance of the film is small as a whole, the adhesive power can be increased. A material having the large interaction on both of the substrate and the film is deposited only on the local part in the 2nd means, by which the respectively large contact areas are provided and the adhesive power is increased. The growth of the deposited film is more liable to form the uniform structure without having island-shaped structures as the interaction of the film and the substrate thereof is larger.

38. 发明专利

JPH03156942A MANUFACTURE OF INTELLIGENT PROBE 失效
公开(公告)号：JPH03156942A
公开(公告)日：1991-07-04
申请号：JP29501889
申请日：1989-11-15
申请人： HITACHI LTD
发明人： ISHITANI TORU , SATO KAZUO , ONISHI TAKESHI , KAWANAMI YOSHIMI , MADOKORO YUICHI
IPC分类号： H01J37/26 , H01L21/66
摘要： PURPOSE:To combine a functional element and a probe with a high degree of freedom by a method wherein the functional element and the probe are manufactured in advance independently and the functional element is device- transplanted to a desired place near a tip part of the probe. CONSTITUTION:In a functional element 1 and a probe 4 which have been manufactured in advance independently, the functional element 1 is device-transplanted to a desired part near a tip part of the probe and an intelligent probe is manufactured. Consequently, a high-performance element can be adopted irrespective of a passive element, an active element or a fine mechanism component; a shape and a material of the probe 4 can be made optimum independently of those of the functional element 1; the functional element 1 can be transplanted to an arbitrary place near the tip part of the probe. Thereby, the functional element 1 can be combined with the probe 4 having a high degree of freedom.

39. 发明专利

JPH02301949A DETECTION OF SECONDARY CHARGED PARTICLE 失效
公开(公告)号：JPH02301949A
公开(公告)日：1990-12-14
申请号：JP12151489
申请日：1989-05-17
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , ONISHI TAKESHI
IPC分类号： H01J37/09 , H01J37/244
摘要： PURPOSE:To provide a secondary charged particle detector operable even in low vacuum by disposing an electrode near a primary beam radiating position on a sample, collecting the secondary charged particles generated from the sample on this electrode, and detecting the current by the secondary charged particles. CONSTITUTION:Secondary charged particles 2 released from the scanning position on a sample of a primary beam 1 are attracted from a sample 3 placed in an earth electric potential to a secondary charged particle collecting electrode 4 by electric field. At that time, the electric potential difference between the electrode and the sample is several 10V, so that many secondary charged particles can be sufficiently collected. As the secondary charged particles are very weak as a current, image display is generally carried out synchronously with scanning signal by use of an amplifier. The electrode can be provided sufficiently close to the sample because of the small electric potential difference between the samples, and may be formed as the cap of a reacting chamber by use of an O-ring 6. This constitution never disturbs the arrangement of a primary beam focusing and deflecting system 7 on the upper part and is preferred.

40. 发明专利

JPS62177909A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62177909A
公开(公告)日：1987-08-04
申请号：JP1792286
申请日：1986-01-31
申请人： HITACHI LTD
发明人： SHIGENIWA MASAHIRO , MIYAO MASANOBU , YADORI SHOJI , MURAKAMI HIDEKAZU , KETSUSAKO MITSUNORI , TAMURA MASAO , KASHU NOBUYOSHI , OYU SHIZUNORI , SUZUKI TADASHI , MADOKORO YUICHI , WADA YASUO
IPC分类号： H01L21/20 , H01L21/336 , H01L21/762
摘要： PURPOSE:To manufacture a fine device by combining ion implantation and a mask, preventing the addition of an impurity to an amorphous Si device operating layer and using an electrode for the device as the mask. CONSTITUTION:A thermal oxide film 2 is formed onto an electric conduction type P-type single crystal Si substrate 1, and an opening section is shaped to a desired section. Amorphous Si 3 is deposited in the opening section in an ultra-high vacuum evaporator. An SiO2 film 2' is formed, and a polycrystalline Si pattern 11 is shaped. Finally, the pattern 11 is employed as a gate electrode for an MOS transistor. P ions 14 are implanted into the amorphous Si 3, using the polycrystalline pattern 11 as a mask. The amorphous Si 3 is thermally treated and solid-phase crystal growth is generated, and the amorphous Si is changed into a single crystal having the same crystal orientation as the substrate 1 up to the distance of approximately 19mum from a seed crystal region 7 after 10hr.

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