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31. 发明专利

JPH02205031A SEMICONDUCTOR DEVICE AND WIRING FILM 失效
公开(公告)号：JPH02205031A
公开(公告)日：1990-08-14
申请号：JP2388789
申请日：1989-02-03
申请人： HITACHI LTD
发明人： SUWA MOTOHIRO , ONUKI HITOSHI , MIYAZAKI KUNIO
IPC分类号： H01L21/3205 , H01L23/52
摘要： PURPOSE:To suppress rise in a wiring resistance and to prevent a malfunction from occurring by providing a diamond or sphalerite type structure at the top of an aluminum alloy wiring, and incorporating a substance in which its lattice constant is specified. CONSTITUTION:An AlP or GaP, ZnS, BeTe, etc., is laminated on an aluminum alloy wiring. The AlP of them has the same diamond structure as that of silicon in its crystalline structure, its lattice constant is 5.3-5.6Angstrom , and alternatively laminated wirings are employed. A contact hole is formed at a thermal oxide SiO2 film 3 by dry etching, aluminum alloy wiring 4 and an AlP film 5 are deposited thereon by a sputtering method, and patterned. Then, a passivation film 7 for protecting an element surface is deposited by a sputtering method. Subsequently, a hole is opened at the passivation film at the top of a bonding pad 8. A wafer formed in this state is heated and quickly cooled. The wafer formed in this manner is divided into respective chips, and bonded with bonding wirings 9 to be associated.

32. 发明专利

JPH02188922A ELECTRONIC DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02188922A
公开(公告)日：1990-07-25
申请号：JP602989
申请日：1989-01-17
申请人： HITACHI LTD
发明人： KAWABUCHI YASUSHI , ONUKI HITOSHI , MIYAZAKI KUNIO , SHIODA KATSUHIKO , SUWA MOTOHIRO , NIHEI MASAYASU , FUKADA SHINICHI , ITAGAKI TATSUO
IPC分类号： H01L23/52 , H01L21/3205
摘要： PURPOSE:To obtain a wiring material whose stress-migration-resistant property and electromigration-resistant property with reference to a wiring film are both excellent by a method wherein the wiring layer is constituted of a laminated film by an Al alloy and TiW or TiN and an Mg or Be film is formed at an interface between the Al alloy and the TiW or TiN. CONSTITUTION:In an electronics device having wiring films 4 to 6 on a semiconductor or insulator substrate 1, said wiring films 4 to 6 are constituted of a laminated film by an Al alloy 4 and TiW or Tin 5 and an Mg or Be film 6 is formed at an interface between the Al alloy 4 and the TiW or TiN 5. For example, an Al alloy 4 contains less than 5wt.% each of Pd, Pt, Si, Li, Be, Mg, Mn, Fe, Co, Ni, Cu, La and Ce and its remaining part is composed of Al, or TiW or TiN 5 contains less than 20wt.% of Mg or Be. when either Mg or Be or both are added in advance, the Al alloy 4 and the TiW or TiN 5 are laminated directly, and wiring films 4 to 6 are formed.

33. 发明专利

JPH02167741A PREPARATION OF METAL/POLYIMIDE COMPOSITE 失效
公开(公告)号：JPH02167741A
公开(公告)日：1990-06-28
申请号：JP24915689
申请日：1989-09-27
申请人： HITACHI LTD , NITTO DENKO CORP
发明人： MIYAZAKI KUNIO , MIURA OSAMU , WATANABE RYUJI , OGOSHI YUKIO , MIYAMOTO TOSHIO , AIZAWA MIKIO , IGARASHI KAZUMASA , MOCHIZUKI SHU
IPC分类号： B32B15/088 , B32B15/08 , C09D179/08
摘要： PURPOSE:To prevent the heat deterioration of the polyimide film applied to a metal film at the time of heat-curing by constituting a polyimide precursor of specific polyamic ester. CONSTITUTION:A copper membrane to be formed into a pattern of copper wiring film 2 is formed on a substrate or ceramic wiring substrate having insulating properties and varnish of a polyimide precursor (polyamic ester) is applied to the copper wiring film 2 and heated to form a polyimide film. This polyimide film is etched to form an insulating film 3 having through-holes. Subsequently, a copper membrane is formed to the through-hole parts to obtain the electrical connection with the copper wiring film of a lower layer. Next, this copper membrane is etched into a desired pattern to form copper wiring of an upper layer. The above mentioned process is repeated. At this time, the polyimide precursor is polyamic ester represented by formula I (wherein R1 and R2 are a 1 or more C org. group and may be same or different each other, Ar1 is an aromatic group having two substituents and Ar2 is an aromatic group having four substituents). By this method, the deterioration of a polyimide film is suppressed to low running cost and a high speed high density wiring board is obtained.

34. 发明专利

JPH02141572A METHOD AND DEVICE FOR BIAS SPUTTERING 失效
公开(公告)号：JPH02141572A
公开(公告)日：1990-05-30
申请号：JP29456688
申请日：1988-11-24
申请人： HITACHI LTD
发明人： NIHEI MASAYASU , ONUKI HITOSHI , KAWABUCHI YASUSHI , MIYAZAKI KUNIO
IPC分类号： C23C14/38
摘要： PURPOSE:To prevent the damage of a substrate and to efficiently form a film thereon by impressing a square wave high-frequency voltage which can independently change the peak values of the negative polarity voltage and positive polarity voltage and energization time to the substrate and sputtering a target. CONSTITUTION:The target 11 having magnets 15 on the rear surface and the substrate 12 are disposed to face each other in a vacuum vessel 14. The above-mentioned vacuum vessel 14 is grounded and a sputtering voltage is impressed from a power source 10 to the target 11 and a bias voltage is impressed to the substrate 12 to sputter the target 11 and to form the film on the substrate 12. The above-mentioned bias voltage is impressed to the target from positive and negative polarity constant voltage power sources 1, 3 in the above-mentioned sputtering method. Voltage setting potentiometers 2, 4 are respectively provided to these power sources 1, 3 and the absolute value of the peak voltage of the negative polarity voltage is set higher than the peak value of the positive polarity voltage. Further, the voltage is set to the square wave which is longer in the energization time of the negative polarity than the energization time of the positive polarity by a waveform controller 5 and positive and negative polarity switching transistors 8, 9. The damage of the substrate 12 by electron bombardment is prevented in this way.

35. 发明专利

JPH0294532A SEMICONDUCTOR PACKAGE AND COMPUTER USING SAME 失效
公开(公告)号：JPH0294532A
公开(公告)日：1990-04-05
申请号：JP24414088
申请日：1988-09-30
申请人： HITACHI LTD
发明人： TANAKA AKIRA , INOUE KOICHI , YAMADA KAZUJI , MIYAZAKI KUNIO , MIURA OSAMU , ARAKAWA HIDEO , YOKOYAMA HIROSHI , NAGANUMA YOSHIO , MORIHARA ATSUSHI , OUCHI KAZUNORI
IPC分类号： G06F1/18 , H01L21/60 , H01L23/057 , H01L23/467 , H01L23/498 , H01L23/50 , H01L25/065
摘要： PURPOSE:To keep the delay time of a signal to a minimum by wiring a signal line not to be affected by influence of permittivity of the substrate. CONSTITUTION:A current for a power source is fed from a semiconductor element 1 to conductive path 9 through wirings 7 for the power source, and to the interior of an electrically insulating substrate 2. Then, the current is transmitted to metal pins 5 for the power source at the end of the substrate 2, and fed out of a package. The self-induction component of the path depends upon the lengths and sectional areas of the wirings 7, the path 9 and pins 4 for signal lines. On the other hand, since the periphery of the path 9 is surrounded by conductors and two paths of different potentials are opposed at a near distance, its capacitive component is increased. Thus, a transmission path is so provided as not to be affected by the influences of the inductance and capacitive components as a signal current as much as possible and also so provided as to increase the capacitive component while decreasing the inductive component as a power source current. In this manner, a signal transmission delay time can be shortened.

36. 发明专利

JPH0283994A MANUFACTURE OF WIRING BOARD 失效
公开(公告)号：JPH0283994A
公开(公告)日：1990-03-26
申请号：JP23500588
申请日：1988-09-21
申请人： HITACHI LTD
发明人： MIURA OSAMU , MIYAZAKI KUNIO , WATANABE RYUJI , OGOSHI YUKIO , MIYAMOTO TOSHIO , KOBAYASHI SHIRO , ITO MASAHIKO , OTSUKA KANJI
IPC分类号： H05K3/46
摘要： PURPOSE:To improve various characteristics as an insulation film and obtain a multilayer interconnection board by forming an organic compound film which does not dissolve to polyamic acid on a Cu wiring. CONSTITUTION:After Cu is deposited on a board the surface of which is thermally oxidized, a Cu film 2 is formed and immersed is a benzimidazole solution 3, washed with water and dried. As a comparison material, a specimen which is not processed is made on the film 2. Next, polymide varnish is applied on respective films 2, the surface of which is processed with the solution 3 and not processed with the solutions 3. It is heated and a polymide film 4 is obtained. Cu is deposited on the film 4 and electrodes 5 that oppose are formed. As above, when the surface of a Cu wiring is processed with an organic compound solution not containing S atoms and a new compound film 15 formed on the surface of the Cu wiring as the result of the reaction between Cu and an organic compound, a base Cu wiring film is prevented from dissolving to polyamic acid in polymide varnish.

37. 发明专利

JPH01225540A NOVEL COEFFICIENT OF THERMAL EXPANSION DISTRIBUTION TYPE FILM 失效
公开(公告)号：JPH01225540A
公开(公告)日：1989-09-08
申请号：JP5151088
申请日：1988-03-07
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： NUMATA SHUNICHI , FUJISAKI KOJI , IKEDA TAKAE , MIWA TAKAO , OGIWARA SATORU , MIYAZAKI KUNIO
IPC分类号： B32B5/14 , B32B7/02 , H01L21/52 , H05K1/02 , H05K1/03
摘要： PURPOSE:To bond materials mutually different in a coefficient of thermal expansion, by successively laminating and arranging polymers different in a coefficient of thermal expansion so that the coefficients of thermal expansion of said polymers are changed in the thickness direction. CONSTITUTION:Polymers different in a coefficient of thermal expansion are successively laminated and arranged so that the coefficients of thermal expansion of said polymers are changed in the thickness direction. This film is obtained by successively coating a substrate with precursor varnishes imparting polyimides different in a coefficient of thermal expansion and partially or perfectly curing said varnishes to finally perform imidation.

38. 发明专利

JPH01124297A MULTILAYER WIRING BOARD 失效
公开(公告)号：JPH01124297A
公开(公告)日：1989-05-17
申请号：JP28284187
申请日：1987-11-09
申请人： HITACHI LTD
发明人： WATANABE HIROSHI , MIURA OSAMU , MIYAZAKI KUNIO , OGOSHI YUKIO , NUMATA SHUNICHI
IPC分类号： H05K3/46
摘要： PURPOSE:To obtain a multilayer wiring board whose thermal resistance of a polyimide is not deteriorated by a method wherein a wiring conductor is composed of a copper alloy containing 0.1-2wt.% aluminum. CONSTITUTION:In a multilayer wiring board which is formed by laminating a wiring conductor 2 and an insulating film 3 one after another on a substrate 1, said wiring conductor is composed of a copper alloy containing 0.1-2wt.% aluminum. Because 0.1-2wt.% aluminum is contained in copper for the wiring conductor, the copper alloy is covered with an oxide film or a ternary compound of copper, aluminum and oxygen; the oxide film is stable as compared with an oxide film of Cu2O only; a Cu2 ion is hardly dissolved into an imide bond in a polyimide; accordingly, it is possible to prevent the imide bond of the polyimide from being weakened. When an aluminum content is less than 0.1wt.%, a color tone of the polyimide is changed and its thermal resistance is deteriorated; when the content exceeds 2.0wt.%, an electrical resistance value becomes too high.

39. 发明专利

JPS63222444A MULTILAYER INTERCONNECTION BOARD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63222444A
公开(公告)日：1988-09-16
申请号：JP5616987
申请日：1987-03-11
申请人： HITACHI LTD
发明人： WATANABE HIROSHI , MIURA OSAMU , MIYAZAKI KUNIO , NUMATA SHUNICHI , IKEDA TAKAE
IPC分类号： H01L21/768 , H01L23/522 , H05K3/46
摘要： PURPOSE:To reduce the peeling of an interface with the elapse of time and to reduce the occurrence of conductor corrosion, by arranging a second insulating layer and a conductor, thereafter heating and polymerizing a precoursor to a final body, thus rigidly bonding the conductor to the insulating layer. CONSTITUTION:A polyimide resin is applied on a substrate 1 as a first insulating layer 2. Heat treatment is performed for resin hardening. The insulating layer 2 is treated with O2 plasma. A polyimide precoursor 7 is evaporated as a second insulating layer. An Al conductor 3 is patterned by photoetching. After polyimide 4 is applied, heat treatment is performed. The precoursor 7 is heated and polymerized by heat treatment into polyimide. The polyimide is shown by the Expression I. Thus the peeling of an interface with the elapse of time and the occurrence of corrosion of the conductor are reduced.

40. 发明专利

JPS63148658A FORMATION OF MULTILAYER FILM 失效
公开(公告)号：JPS63148658A
公开(公告)日：1988-06-21
申请号：JP29485286
申请日：1986-12-12
申请人： HITACHI LTD
发明人： MIURA OSAMU , WATANABE HIROSHI , MIYAZAKI KUNIO , FUJISAKI KOJI , OGINOYA MITSUO
IPC分类号： H01L21/768 , H01L23/522 , H05K3/46
摘要： PURPOSE:To improve adhesive force of polyimide itself and that of polyimide to metal so as to form a multilayer film comprising polyimide resin film of low thermal expansion, by reforming a surface of polyimide by an etching technique. CONSTITUTION:A metal layer 19 or a resin layer 20 is formed on a polyimide resin film 18 of 3X10 /K or less in thermal expansion coefficient. Then, a carbonyl compound film is formed on the resin film 18 by an etching process, and the metal layer 19 or the resin layer 20 is laminated on the carbonyl compound film. A surface of polyimide is activated by an etching technique so that a reaction of carbonyl compound is caused to induce a hydrogen bond between thin film molecules formed in an upper layer. Thus, carbonyl compound with adhesiveness can be formed on the surface of polyimide, and so a multilayer film comprising a polyimide resin film of low thermal expansion can be formed.

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