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31. 发明专利

JPS58199569A Manufacture of schottky diode 失效
标题翻译：肖特基二极管的制造
公开(公告)号：JPS58199569A
公开(公告)日：1983-11-19
申请号：JP8142282
申请日：1982-05-17
申请人： Hitachi Ltd
发明人： KIKUCHI AKIRA , KOGIRIMA MASAHIKO
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L29/872
摘要： PURPOSE:To readily obtain a Schottky diode which has large electrostatic capacity in a small area by forming in a self-aligning manner an insulating film which has large dielectric constant at the periphery of a contact. CONSTITUTION:Antimony is selectively diffused in a P type Si substrate 11 to form a buried layer 12 of high density. After an Si epitaxial layer 13 is accumulated, the layer 13 is etched. Then, the exposed Si 3 is oxidized, an SiO2 film 14 is grown to isolate between elements, and a high melting point metal 23 is accumulated. When it is heat treated in nitrogen atmosphere, a metal silicide 15 is formed, and when it is further heat treated in oxygen atmosphere, an oxidized film 16 is formed on the surface. When the Si substrate is heated in nitrogen or ammonia gas, nitrided films 17 are formed on the periphery of the anode and cathode. Subsequently, phosphorus of high density is diffused only at the cathode 18 of the Schottky diode.
摘要翻译：目的：通过以自对准的方式形成具有较大介电常数的绝缘膜，容易获得小面积的小静电容量的肖特基二极管。构成：在P型Si衬底11中选择性地扩散锑，形成高密度的掩埋层12。在Si外延层13积累之后，蚀刻层13。然后，暴露的Si 3被氧化，生长SiO 2膜14以分离元件，并且积聚高熔点金属23。当在氮气气氛中进行热处理时，形成金属硅化物15，并且当在氧气氛中进一步热处理时，在表面上形成氧化膜16。当在氮气或氨气中加热Si衬底时，在阳极和阴极的周围形成氮化膜17。随后，高密度的磷仅在肖特基二极管的阴极18扩散。

32. 发明专利

JPS5875830A REDUCED PRESSURE HOT WALL CVD METHOD 失效
公开(公告)号：JPS5875830A
公开(公告)日：1983-05-07
申请号：JP17298781
申请日：1981-10-30
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , SAIDA HIROJI , KOGIRIMA MASAHIKO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To form a single crystal epitaxial film of high quality by maintaining the pressure of a reaction tube when a substrate is at a high temperature at the step except the CVD step at 30-600Torr under the flow of H2 gas, thereby preventing the whitening of the surface of the substrate. CONSTITUTION:A quartz reaction tube 3 is set in an electric furnace 1 having three zones, a jig 4 which carries a plurality of substrates 3 is evacuated and maintained at 50Torr, and is annealed with H2 gas flow. Then, a CVD is performed with the H2 gas and source gas flow. Subsequently, the source gas is stopped, and after the CVD is finished, the substrates 3 are conveyed from the high temperature section of the tube 2 with the H2 gas flow and are cooled.

33. 发明专利

JPS57175797A EPITAXIAL GROWTH UNDER REDUCED PRESSURE 失效
公开(公告)号：JPS57175797A
公开(公告)日：1982-10-28
申请号：JP5985481
申请日：1981-04-22
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , MATSUDA MASATOSHI , KOGIRIMA MASAHIKO , TOCHIKUBO HIROO , KANAI AKIRA
IPC分类号： C30B25/14 , C01B33/02 , H01L21/02 , H01L21/205
摘要： PURPOSE:The source gas is fed from the nozzle jutting out from the upper part of the reactor tube to effect the growth of a film, then hydrogen chloride is fed into the tube, after the reaction, to prevent the contamination in the tube and deterioration of the tube material. CONSTITUTION:The jig 3 carrying the silicon base plate 4 is inserted into the reactor tube 2 set in the furnace and the tube is heated up to about 1,000 deg.C. The reaction gases, SiH2Cl2 and H2 are fed through the nozzle 5 into the reactor tube 2 and the jetting end of the nozzle 5 is kept at over 800 deg.C. Meanwhile the carrier gas, H2, and the doping gas, PH2, are fed from the branch of the end of the reactor tube 2. Thus, an epitaxial film is formed on the surface of the silicon base plate 4. After reaction, the gases are excluded and the jig is taken out. The inside of the reactor tube is made vacuum and hydrogen chloride is directly fed into the tube 2 to keep the pressure at about 5 Torr for about 10min, whereby the wall of the reactor tube is almost cleaned to become clear.

34. 发明专利

JPS5650559A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5650559A
公开(公告)日：1981-05-07
申请号：JP12539979
申请日：1979-10-01
申请人： HITACHI LTD
发明人： KAWAMURA MASAO , IKEDA TAKAHIDE , TAMAOKI YOUICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L29/73 , H01L21/318 , H01L21/331 , H01L29/72
摘要： PURPOSE:To form the emitter and the graft base of a bipolar transistor by self- alignment by selectively growing polycrystalline silicon only on the surface of an Si3N4 film when both an SiO2 film surface and an Si3N4 film surface coexist thereon. CONSTITUTION:An Si3N4 film 2 and an SiO2 film are formed on the main surface of an N type monocrystalline silicon 1, and a P type base region 5 is formed by an ion implantation process. The SiO2 film formed with an emitter is etched and removed, a polycrystalline silicon layer 8 is grown on the surface of the film 2 exposed, B ions are implanted thereto, and a graft base region 9 is formed in the silicon 1. Then, the exposed portions of the layers 8 and the layer 2 are etched and removed, and an emitter region 10 is formed. Thus, the graft base and the emitter can be accurately formed, and the base resistance can consequently be reduced.

35. 发明专利

JPS5623775A MANUFACTURE OF INTEGRATED CIRCUIT 失效
公开(公告)号：JPS5623775A
公开(公告)日：1981-03-06
申请号：JP9727979
申请日：1979-08-01
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L29/72
摘要： PURPOSE:To remove defect only in the layer of a semiconductor integrated circuit without changing the impurity profile and to obtain a base region of good quality when the base region is formed in the semiconductor layer by a method wherein ions of high impurtiy concentration are implanted and the layer is annealed by a laser beam or an electron beam. CONSTITUTION:An N -type buried region 2 is formed by diffusion in an Si substrate 1, an N-type layer 3 is formed by epitaxial growth on the whole face containing the region 2 and is surrounded with a separating oxide film 5 to make the layer 3 to be an island-form containing the region 2. Then a collector region 4 is provided at a part of the layer 3 as usual, and a P -type base region 6 is formed at a distance performing as follows. B ions are implanted to the region 6 with 100KeV accelerating voltage and 3X10 /cm or more of dose quantity, and the region is annealed instantaneously by applying the laser beam or electron beam. Then an emitter region 8 is formed in the region 6 by diffusion or ion implantation to obtain the base width of about 0.2mum.

36. 发明专利

JPS52120763A SILICON EPITAXIAL GROWTH METHOD 失效
公开(公告)号：JPS52120763A
公开(公告)日：1977-10-11
申请号：JP3716876
申请日：1976-04-05
申请人： HITACHI LTD
发明人： KAWAMURA MASAO , HONMA KOUJI , KOGIRIMA MASAHIKO , SAIDA KOUJI , SUZUKI MICHIO , MAKI MICHIYOSHI
IPC分类号： C30B29/06 , H01L21/205
摘要： PURPOSE:To decrease the automatic doping in lateral direction by performing growth with low SiCl4 density only for a short time after start of epitaxial growth and then by shortening the high temperature holding time as much as possible by having continuous growth with high SiCl4 density.

37. 发明专利

JPS52114270A VAPOR GROWING APPARATUS 失效
公开(公告)号：JPS52114270A
公开(公告)日：1977-09-24
申请号：JP2994376
申请日：1976-03-22
申请人： HITACHI LTD
发明人： SAIDA KOUJI , KOGIRIMA MASAHIKO , HONMA KOUJI , KAWAMURA MASAO , SUZUKI MICHIO , MAKI MICHIYOSHI
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , H01L21/205
摘要： PURPOSE:To allow uniform vapor growth to take place by providing a plate between a susceptor and a reaction tube within the cylindrical reaction tube.

38. 发明专利

JPS5298474A VAPOR PHASE GROWTH UNDER REDUCED PRESSURE 失效
公开(公告)号：JPS5298474A
公开(公告)日：1977-08-18
申请号：JP1402976
申请日：1976-02-13
申请人： HITACHI LTD
发明人： SHINTANI AKIRA , KOGIRIMA MASAHIKO , TAMAOKI YOUICHI , SUZUKI MICHIO , MAKI MICHIYOSHI
IPC分类号： H01L21/205 , H01L21/20 , H01L21/31
摘要： PURPOSE:To produce an insulator film of a uniform thickness by making the spacing between reaction tube walls and specimen wafer within 5 mm.

39. 发明专利

JPS51142499A CRYSTAL GROWING METHOD 失效
公开(公告)号：JPS51142499A
公开(公告)日：1976-12-08
申请号：JP6653775
申请日：1975-06-04
申请人： HITACHI LTD
发明人： KASHIMURA TAKASHI , KOGIRIMA MASAHIKO , HIRAO MOTONAO
IPC分类号： C30B19/00 , C01B25/08 , C30B29/44 , H01L21/208
摘要： PURPOSE:To grow GaP crystal which has smooth surface with low etch pits density and is high efficiency luminescent diode.

40. 发明专利

JPS51126041A CRYSTAL GROWTH METHOD 失效
公开(公告)号：JPS51126041A
公开(公告)日：1976-11-02
申请号：JP11554974
申请日：1974-10-09
申请人： HITACHI LTD
发明人： KISHINO SEIGOU , KOGIRIMA MASAHIKO , HIRAO MOTONAO , KASHIMURA TAKASHI
IPC分类号： C23C16/44 , C30B19/12 , H01L21/205 , H01L21/208 , H01L33/16 , H01L33/30 , H01L33/34
摘要： PURPOSE:To obtain epitaxial growth layer of good quality transition density through causing growth of the same substance and the board in the middle of the epitaxial layer for the purpose of the basic board.

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