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    • 31. 发明专利
    • Magnetic bubble memory device
    • 磁性气泡存储器件
    • JPS59104781A
    • 1984-06-16
    • JP21142782
    • 1982-12-03
    • Hitachi Ltd
    • CHIBA SHINSAKUYOSHIDA KAZUTOSHISUGIE MAMORU
    • G11C11/14
    • G11C11/14
    • PURPOSE:To attain the control of memories of different memory capacities by giving the constants of plural memories in the form of a constant table into an ROM of a bubble memory control circuit and designating a desired content with a type recognition input. CONSTITUTION:An ROM16 of a control circuit 3 stores previously the cycle number of rotary magnetic field up to each function in response to plural memories, i.e., the control subjects of different memory capacities and on the basis of the cycle number of rotary magnetic fields from a certain function to the next function. When the types of memories of different capacities are defined as 20a, 20b-20n, the contents a-h corresponding to these types are stored in the ROM16 in the form of constant tables 21a, 21b-21n, respectively. Then a desired constant table is selected in response to the control subject memory by the type recognition input corresponding to the desired type. Thus a memory to be controlled is controlled.
    • 目的:通过将恒定表格形式的多个存储器的常数提供给气泡存储器控制电路的ROM并通过类型识别输入来指定期望的内容来获得对不同存储器容量的存储器的控制。 构成:控制电路3的ROM16响应于多个存储器,即不同存储器容量的控制对象,并且基于旋转磁场的循环次数,先前存储了每个功能的旋转磁场的周期数, 一定功能到下一个功能。 当不同容量的存储器的类型被定义为20a,20b-20n时,对应于这些类型的内容a-h分别以常数表21a,21b-21n的形式存储在ROM16中。 然后,通过对应于期望类型的类型识别输入,响应于控制对象存储器选择期望的常数表。 因此,要控制的存储器被控制。
    • 32. 发明专利
    • POWER SUPPLY DEVICE
    • JPS5994290A
    • 1984-05-30
    • JP20212882
    • 1982-11-19
    • HITACHI MICROCUMPUTER ENGHITACHI LTD
    • UCHIDA YASUHISACHIBA SHINSAKU
    • G11C11/14
    • PURPOSE:To obtain the 2nd power supply voltage and at the same time to prevent the unexpected variance of said power supply voltage with a bubble memory device by providing a charging capacitor which charges the discharging electric charge which is intermittently supplied in response to a conduction or non- conduction state of a control transistor. CONSTITUTION:When a transistor TRQ21 is turned on, a current I1 is conducted to an earth line from a power supply VR via a diode D21, a resistance R21 and the 1st current route of the TRQ21. At the same time, a charging current I2 is conducted to a capacitor C22 via a diode D22 and a resistance R22. That is, a current route is formed in parallel to the 1st current route. When the TRQ21 is turned off, the currents I1 and I2 are cut off. Therefore the collector voltage of the TRQ21 is raised approximately up to the level of the power supply VR. Then a diode D23 conducts, and the discharging current of the C22 is charged to a capacitor C24 via the D23.
    • 33. 发明专利
    • Output detecting circuit for magnetic bubble memory
    • 用于磁性气泡存储器的输出检测电路
    • JPS58179984A
    • 1983-10-21
    • JP6107982
    • 1982-04-14
    • Hitachi Ltd
    • FUJII TATSUHISACHIBA SHINSAKU
    • G11C11/14G11C19/08
    • G11C19/0866
    • PURPOSE:To eliminate noise, etc. and to enable the stable detection of an output signal, by giving a differential process to a magnetic bubble detecting output obtained via a sense amplifier via a peak holding circuit and a by-pass circuit which is equivalent to said peak holding circuit. CONSTITUTION:A peak holding circuit 7 and a by-pass circuit 10' are controlled by a switch control signal supplied from a terminal 20a and via an inverter 20 and through transistors 11-14 and 15 of a current switch circuit 16. Then a peak holding capacitor 6 of the circuit 7 holds the peak value of a magnetic bubble detecting output which is amplified by a sense amplifier 1. At the same time, the noise component corresponding to the charge/discharge switching of the circuit 7 and generated by the circuit 16 is held at a capacitor 21 having the same characteristics as the capacitor 6 of the circuit 10' which is similar to the circuit 7. The outputs of these circuits 7 and 10' undergo a differential process by a comparator. Then the peak holding value free from the noise component, etc. is delivered. This enables the stable detection of an output signal to the variations of the DC level, phase, etc.
    • 目的:为了消除噪声等,并且通过经由峰值保持电路和旁路电路对通过读出放大器获得的磁气泡检测输出进行差分处理,能够稳定地检测输出信号,等效于 所述峰值保持电路。 构成:峰值保持电路7和旁路电路10'由从端子20a和逆变器20提供的开关控制信号以及电流开关电路16的晶体管11-14和15进行控制。然后, 电路7的保持电容器6保持由读出放大器1放大的气泡检测输出的峰值。同时,与电路7的充电/放电切换相对应并由电路产生的噪声成分 16被保持在具有与电路7类似的电路10'的电容器6相同特性的电容器21.这些电路7和10'的输出由比较器进行差分处理。 然后传送没有噪声分量等的峰值保持值。 这使得能够稳定地检测输出信号对DC电平,相位等的变化。
    • 40. 发明专利
    • LIQUID CRYSTAL DISPLAY DEVICE
    • JP2001051256A
    • 2001-02-23
    • JP22343799
    • 1999-08-06
    • HITACHI LTDHITACHI DEVICE ENG
    • CHIBA SHINSAKUKONO MASAOKUBO KIICHIRO
    • G06F3/041G02F1/1333G02F1/1335G06F3/033
    • PROBLEM TO BE SOLVED: To suppress reflected light on the surface of an illuminator by providing an antireflection film on the surface opposed to a liquid crystal display panel of a lower substrate. SOLUTION: This antireflection film 40F is provided on a surface opposed to a liquid crystal display panel 1 of a transparent hard substrate 40B. Thereby, reflection of light generated between an air layer, between a front light and touch panel and the liquid crystal display panel 1 and the transparent hard substrate 40B is prevented. The material of the antireflection 40F preferably has a refractive index valve intermediate between refractive indices of the transparent hard substrate 40B and the air. As actual examples of the material of the antireflection film 40F, magnesium fluoride MgF2 having a refractive index of 1.38 (550 nm wavelength), cryolite Na3AlF6 and the like having a refractive index of 1.33 and the like are used. The antireflection film 40F has to be formed at a temperature at which acrylic resin will not deform. There are a deposition method, a low temperature sputtering method and an ion-plating method for forming the antireflection film and the ion-plating method which are avalilable with superior in cost performance.