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31. 发明专利

JPS60167323A LATERAL TYPE SEMICONDUCTOR WAFER BATCH TREATMENT DEVICE 失效
公开(公告)号：JPS60167323A
公开(公告)日：1985-08-30
申请号：JP27888284
申请日：1984-12-28
申请人： HITACHI LTD
发明人： AKIBA MASAKUNI , NAGATOMO HIROTO
IPC分类号： H01L21/22 , H01L21/677
摘要： PURPOSE:To check bringing of dust into a treatment chamber according to an insertion and taking out bar itself, and to enable to perform batch treatment of lateral type semiconductor wafers in a pure atmosphere by a method wherein the insertion and taking out bar to perform insertion and taking out of the wafers from a furnace is so constructed as not to be provided with movable parts such as a sliding part or a rotating part, etc. at least to the part to be inserted in the furnace. CONSTITUTION:An insertion and taking out bar 19 is a circular tube type substance, a fork type jig uplift part 19a consisting of two pieces is formed to one edge of the longitudinal direction thereof to enable to support the wing part 12a of a wafer jig 12 from the lower part, and length of the bar 19 is made in size enabled to be inserted sufficiently in the inside tube 15 of a diffusion furnace 13, and moreover manufactured of a heat-resistant material such as quartz, etc. as to enable to endure sufficiently against the treatment temperature of the diffusion furnace 13. Moreover, laterally directional feed driving motors 20, 20 to make the insertion and taking out bar 19 thereof to perform reciprocating motion in the extending direction thereof, and a height directionally driving motor 21 to make the bar to perform reciprocating motion in the height direction are arranged in the rear of a sleeve part 18a.

32. 发明专利

JPS6038827A CALIBRATION FOR SENSITIVITY OF AUTOMATIC FOREIGN SUBSTANCE INSPECTING DEVICE 失效
公开(公告)号：JPS6038827A
公开(公告)日：1985-02-28
申请号：JP14650183
申请日：1983-08-12
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： KOIZUMI MITSUYOSHI , TANIUCHI TOSHIAKI , MURAKAWA YUKIO , AKIBA MASAKUNI , MAEJIMA HIROSHI
IPC分类号： G01B11/00 , G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01L21/027 , H01L21/66
摘要： PURPOSE:To enable to perform calibration of the absolute sensitivity stably and simply by a method wherein the sensitivity of the automatic foreign substance inspecting device is calibrated by using standard samples, which have previously measured the intensity of reflected light reflected from each of rough flaws on the surface of a sample to the reference illuminating light. CONSTITUTION:Flaws 13, which have been previously cut in by performing a laser processing on a silicon wafer 15, and numerical magnitudes, which have been previously substituted for the initial device detected output values 16 of the flaws 13 and standard grain radiuses 17 having the same detected output values as the detected output values 16, have been specified in the silicon wafer 15 for calibration with a laser pen, an etching, etc. For omitting works to write letters with the laser pen and etching processes, the standard grain radiuses 17 and the output values 16 may be registered on a form 18. However, in case they are registered, it is desirable that the flaws and the recording positions are correspondent to each other on the form, as illustrated by the diagram (b). By using these calibrating samples for calibration of the sensitivity of the foreign substance inspecting device, flaws, whose reflection intensities are always constant, are obtained and when the device detected output value of photoelectric conversion detected from each of the flaws is conformed to the initial device sensitivity, the calibrating work can be easily performed.

33. 发明专利

JPS59145530A Plasma processing device 失效
标题翻译：等离子体加工装置
公开(公告)号：JPS59145530A
公开(公告)日：1984-08-21
申请号：JP24197383
申请日：1983-12-23
申请人： Hitachi Ltd
发明人： NAGATOMO HIROTO , AKIBA MASAKUNI
IPC分类号： H01L21/302 , H01J37/32
CPC分类号： H01J37/32431
摘要： PURPOSE:To improve the efficiency of processing without damaging the material to be processed by a method wherein the reaction gas, to be supplied into the plasma reaction chamber where the material to be processed will be placed, is brought into a plasmic state by an auxiliary plasma generating mechanism, and the reaction gas in plasmic state is supplied to the plasma reaction chamber. CONSTITUTION:The air in a reaction chamber 1 and a plasma generating tube 15 is exhausted from an exhaust tube 11, and their inner part is maintained in a decompressed state. Plasma is excited between a susceptor 5 and an electrode 8 by applying a high frequency voltage between said susceptor 5 and the electrode 8. On the other hand, the reaction gas to be supplied into the reaction chamber 1 from a plasma gas introducing hole 10 is turned to radical plasma. Each reaction gas running inside a plasma generating tube 15 is excited and turned to radical plasma. The radical reaction gas brought in the reaction chamber 1 passes between the electrode 8 and the susceptor 5. Most of the reaction gas is turned to radical and its plasmic density is increased, and a silicon nitride film is uniformly formed on the surface of a wafer 6.
摘要翻译：目的：为了提高处理效率，而不损害待处理材料的方法，其中将要供给到待处理材料的等离子体反应室中的反应气体通过辅助物质进入等离子体状态等离子体产生机构和等离子体状态的反应气体供应到等离子体反应室。构成：反应室1和等离子体发生管15中的空气从排气管11排出，其内部维持在减压状态。等离子体通过在所述基座5和电极8之间施加高频电压而在基座5和电极8之间激发。另一方面，从等离子体气体导入孔10供给到反应室1中的反应气体为转向激进血浆。在等离子体发生管15内运行的每个反应气体被激发并转变成自由基等离子体。引入反应室1中的自由基反应气体在电极8和基座5之间通过。大部分反应气体转变为自由基，并且其等离子体密度增加，并且氮化硅膜均匀地形成在晶片的表面上 6。

34. 发明专利

JPS59144121A Cvd apparatus 失效
标题翻译： CVD装置
公开(公告)号：JPS59144121A
公开(公告)日：1984-08-18
申请号：JP1735283
申请日：1983-02-07
申请人： Hitachi Ltd
发明人： AKIBA MASAKUNI , SHIDA HIROYUKI
IPC分类号： C23C16/44 , H01L21/205 , H01L21/31
CPC分类号： C23C16/44
摘要： PURPOSE:To form a film uniformly and continuous conduct the CVD processing by executing the CVD processing through the movement of wafers in the processing chamber while they are held vertically. CONSTITUTION:A CVD apparatus 1 is provided with a housing 2 which are entirely formed like a ring and forms a part of the external circumference as a reaction processing chamber 3. A transfer means 7 which moves wafers while they are rotating by themselves within the housing 2 is provided in the space 6 of the internalcircumference. A supporting disk 14 supports disk type semiconductor wafers W. A heater 19 is provided within a separator 4 of the reaction chamber 3 in order to heat the inside of chamber 3. At the upper part of chamber 3, a reaction gas supply port 20 is provided in the length direction in order to keep the inside of chamber 3 under the reaction gas ambient and it is then exhausted from the exhaust port provided at the lower part.
摘要翻译：目的：为了均匀地形成膜，通过在处理室中垂直保持时通过晶片的移动执行CVD处理来连续进行CVD处理。构成：CVD装置1设置有壳体2，壳体2完全形成为环形，并形成作为反作用处理室3的外围的一部分。一个转移装置7，它们在壳体内旋转时移动晶片， 2设置在内部空间的空间6中。支撑盘14支撑圆盘型半导体晶片W.在反应室3的隔板4内设置加热器19，以加热室3的内部。在室3的上部，反应气体供给口20为设置在长度方向上，以便将室3的内部保持在反应气体环境下，然后从设置在下部的排气口排出。

35. 发明专利

JPS5925142B2 JPS5925142B2 - 失效
公开(公告)号：JPS5925142B2
公开(公告)日：1984-06-14
申请号：JP395777
申请日：1977-01-19
申请人： Hitachi Ltd
发明人： AKIBA MASAKUNI , NAGATOMO HIROTO
IPC分类号： H05B3/62 , C23C16/46 , F27D11/02 , H01L21/02 , H01L21/22 , H05B3/64

36. 发明专利

JPS5912741B2 JPS5912741B2 - 失效
公开(公告)号：JPS5912741B2
公开(公告)日：1984-03-26
申请号：JP3120676
申请日：1976-03-24
申请人： Hitachi Ltd
发明人： NAGATOMO HIROTO , AKIBA MASAKUNI , MISONOO YUKIO
IPC分类号： C30B25/14 , C23C16/54 , F27B9/00 , H01L21/205
CPC分类号： C23C16/54

37. 发明专利

JPS596554A Defect detecting device 失效
标题翻译：缺陷检测装置
公开(公告)号：JPS596554A
公开(公告)日：1984-01-13
申请号：JP11543682
申请日：1982-07-05
申请人： Hitachi Ltd
发明人： AKIBA MASAKUNI , SHIDA HIROYUKI , NAGATOMO HIROTO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/302 , H01L21/3065 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To perform defect detection in high accuracy by enabling threshold value to vary by following the signal wave form for defect discrimination by a method wherein two kinds of signals which are approximate to each other are obtained by a pair of detectors, and one signal is used as the threshold value of the other signal. CONSTITUTION:The first photocell 25 as the first detector and the second photocell 35 as the second detector are so provided above a wafer 1 as to receive the light 6 irregularly reflected on the surface of the wafer 1 respectively. A deflector 38 is arranged in front of the second photocell 35, and thus so constituted as to deflect the direction of wave motion only regarding the light irregularly reflected in a defect 5. A discriminator 40 composed of a threshold circuit, etc. is connected to the output ends of the first and second phoocells 25 and 35. The discriminator 40 which has received the first signal wave form 20 and the second one 30 respectively uses the first signal wave form 20 as the threshold value of the second one 30 by superposing them imaginarily, and accordingly discriminates defect detection signals 34a and 34b from the other signal parts 31, 32 and 33.
摘要翻译：目的：通过使阈值能够通过跟随用于缺陷识别的信号波形来改变阈值来进行高精度的缺陷检测，其中通过一对检测器获得彼此近似的两种信号，并且一个信号是用作另一信号的阈值。构成：作为第一检测器的第一光电池25和作为第二检测器的第二光电池35分别设置在晶片1的上方，以分别接收在晶片1的表面上不规则地反射的光6。偏转器38布置在第二光电池35的前面，因此被构造成仅针对在缺陷5中不规则地反射的光而偏转波浪方向。由阈值电路等构成的鉴别器40连接到第一和第二光电池25和35的输出端。已经接收到第一信号波形式20和第二信号波形形式20的鉴别器40分别使用第一信号波形20作为第二信号波形20的阈值，通过叠加它们并且相应地从其他信号部分31,32和33中辨别缺陷检测信号34a和34b。

38. 发明专利

JPS58158911A CONTINUOUS PREWASHING AND SPUTTERING DEVICE FOR WAFER 失效
公开(公告)号：JPS58158911A
公开(公告)日：1983-09-21
申请号：JP4079782
申请日：1982-03-17
申请人： HITACHI LTD
发明人： NAKAMURA HIROSHI , NAGATOMO HIROTO , AKIBA MASAKUNI , ITAGAKI TATSUO
IPC分类号： H01L21/677 , H01L21/02 , H01L21/285 , H01L21/31
摘要： PURPOSE:To attain the homogenization of wafer film and automatization of the process of pre-washing and sputtering for the wafer by such an arrangement wherein a pre-washing device and a sputtering device are combined into a series of processing and it is properly composed so that wafers can be consecutively processed one by one. CONSTITUTION:A device 11 is composed of a loader/unloader mechanical unit, a pre-washing unit 12 and a sputtering unit 13. The disposing unit 12 is equipped with a chemical disposing tank 14, water disposing tank 15 and a centrifugal separation drier 16. The disposing unit 13 is equipped with a low vacuum exhaust chamber 17, a vacuum baking chamber 18 which performs vacuum baking in highly vacuous atmosphere, a sputtering chamber 19, a cooling chamber 20 and a leak chamber 21. Automatic conveyors are provided in all tanks and spaces between tanks, and wafers are carried and processed, one by one, at each unit as specified and wafers for which processing has been completed are carried by a return conveyor and sent to a specified place.

39. 发明专利

JPS5834077A ULTRASONIC WASHING TANK 失效
公开(公告)号：JPS5834077A
公开(公告)日：1983-02-28
申请号：JP13146981
申请日：1981-08-24
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： AKIBA MASAKUNI , KANEMATSU MASAYOSHI
IPC分类号： B08B3/12

40. 发明专利

JPS5833154A INSPECTING DEVICE 失效
公开(公告)号：JPS5833154A
公开(公告)日：1983-02-26
申请号：JP13146781
申请日：1981-08-24
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： AKIBA MASAKUNI , NAGATOMO HIROTO , YONEMITSU KAZUHIKO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/95 , G01N21/956
摘要： PURPOSE:To detect not only an outline of a defect but also its details, by a method wherein a device is provided with a primary inspecting section which detects a defect through detection of the total surface of a patterned plate and a secondary inspecting section which detects the defect in details. CONSTITUTION:A primary inspecting section 1 is constituted such that a wafer 3, being of a face to be inspected, is placed on an X-Y table 4, and the surface of water 3 is irradiated with laser light L from a laser light source 5. Meanwhile, a secondary inspecting section 2 is provided with a vacuum sample chamber 11 which houses the water, placed on an X-Y table 10, in a hermetical state, and an electronic microscope 12 and a fluorescent X-ray analyzer 13 connected to the microscope 12 are located above the wafer 3. A part of a defect detecting output is inputted to a coordinate memory unit 8. This constitution permits the detection of not only the outline of the defect but also the details thereof.

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