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21. 发明专利

JPS61131533A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61131533A
公开(公告)日：1986-06-19
申请号：JP25436384
申请日：1984-11-30
申请人： Fujitsu Ltd
发明人： MARUYAMA KENJI
IPC分类号： H01L21/205 , H01L21/365
CPC分类号： H01L21/0262 , H01L21/02411 , H01L21/02562
摘要： PURPOSE:To form the crystal of good quality as well as to obtain excellent characteristics by a method wherein the raw material of organic metal is supplied, the single unit only of the constituting elements having high vapor pressure is controlled and supplied, and the vapor pressure is controlled property. CONSTITUTION:A susceptor 2 is provided in a reaction vessel 3, and a CdTe substrate 1 is mounted thereon. The raw gas of DETe, DMCd and DMHg is fed to a reaction vessel 3 from a raw gas introducing pipe 8. On the other hand, the gas is sucked and exhausted by an exhaust pipe 9, and the reaction vessel 3 is decompressed to several tens torr or thereabout. An Hg reservoir 5 is heated up to 200-300 deg.C. The DMHg raw gas of 0.05-0.6l/min., DMCd of 0.05-0.3l/min. and DETe of 0.1-0.8l/min. are fed. According to the above- mentioned constitution, the saturation pressure containing Hg vapor is obtained, and HgCdTe can be grown on the substrate 1 of the susceptor 2 under the above-mentioned state.
摘要翻译：目的：通过提供有机金属原料的方法形成质量好的晶体，并且通过提供有机金属原料的方法获得优异的特性，仅控制并提供具有高蒸气压的构成元素的单一单元，并且蒸气压是受控财产。构成：在反应容器3中设置感受体2，在其上安装CdTe基板1。将DETe，DMCd和DMHg的原料气体从原料气体导入管8供给到反应容器3中。另一方面，由排气管9吸引排出气体，将反应容器3减压成数个几十托或其附近。 Hg储存器5被加热到200-300℃。 DMHg原料气为0.05-0.6l / min，DMCd为0.05-0.3l / min。和DETe为0.1-0.8l / min。喂食根据上述结构，可获得含有Hg蒸气的饱和压力，并且在上述状态下可以在基座2的基板1上生长HgCdTe。

22. 发明专利

JPS5918645A Liquid phase epitaxial growth apparatus 失效
标题翻译：液相外延生长装置
公开(公告)号：JPS5918645A
公开(公告)日：1984-01-31
申请号：JP12865782
申请日：1982-07-22
申请人： Fujitsu Ltd
发明人： YOSHIKAWA MITSUO , TAKIGAWA HIROSHI , ITOU MICHIHARU , MARUYAMA KENJI , UEDA TOMOSHI
IPC分类号： H01L21/208 , H01L21/368
CPC分类号： H01L21/02625 , H01L21/02411 , H01L21/02562 , H01L21/02628
摘要： PURPOSE:To obtain a high quality epitaxial growth film under normal temperature by accommodating the component which is easily vaporized in the epitaxial layer forming material within a recess formed at a part of fine tube connected to a hermetically sealed reservior, heating it under the control, balancing a divided pressure thereof with a vapor pressure of epitaxial growth solution within the reservior and moreover providing an exhaust valve. CONSTITUTION:The Hg1-xCdxTe 16 and CdTe substrate 16 are accommodated within a reservior 11 under the support by a bar 13 and the inside is exhausted to the vacuum condition. The heaters 17, 21 are set respectively to 500 deg.C, 300 deg.C, H2 is supplied to a fine tube 18. When vapor pressure of reservoir is 1kg/cm , a gas is introduced from a valve 14 and a divided pressure of Hg 20 within a recess 19 is balanced to the vapor pressure of reservoir 11 by adjusting the heater 21. Next, the solution 12 is dipped into the solution 16, temperature of heater 17 is lowered with the specified gradient. Thereby, an epitaxial layer of Hg1-xCdxTe is provided on the substrate and then substrate is lifted after the specified period. The space 23 in the reservoir 11 is saturated by the Hg vapor and high pressure is no longer necessary for preventing evaporation from the matrial 16. Moreover, unwanted material 16 falls by its own weight while it is lifted and thereby a high quality epitaxial layer can be obtained without surface damage, unlike the sliding method.
摘要翻译：目的：为了在常温下通过将在外延层形成材料中容易蒸发的成分容纳在形成于连接到密封储存器的细管的一部分的凹部内，在控制下加热而在常温下获得高质量的外延生长膜，将其分压与其内的外延生长溶液的蒸气压平衡，并提供排气阀。构成：Hg1-xCdxTe16和CdTe基板16通过杆13容纳在支撑件下面的储液箱11中，并且内部被耗尽到真空状态。加热器17,21分别设定为500℃，300℃，H2被供给到细管18.当储存器的蒸气压为1kg / cm 2时，从阀14引入气体，通过调节加热器21将凹部19内的Hg 20的分压平衡到储存器11的蒸汽压。接下来，将溶液12浸入溶液16中，加热器17的温度以规定的梯度下降。由此，在衬底上设置有Hg1-xCdxTe的外延层，然后在规定的时间后将衬底提起。储存器11中的空间23被Hg蒸汽饱和，并且不再需要高压来防止母体16的蒸发。此外，不需要的材料16在被提升时下降其自身重量，由此高质量的外延层可以与滑动方法不同，可获得无表面损伤。

23. 发明专利

JPS5918644A Liquid phase epitaxial growth apparatus 失效
标题翻译：液相外延生长装置
公开(公告)号：JPS5918644A
公开(公告)日：1984-01-31
申请号：JP12865682
申请日：1982-07-22
申请人： Fujitsu Ltd
发明人： TAKIGAWA HIROSHI
IPC分类号： H01L21/208 , H01L21/368
CPC分类号： H01L21/02625 , H01L21/02562 , H01L21/02628
摘要： PURPOSE:To obtain high quality epitaxial layer by providing slidably the melt back solution well and epitaxial growth solution well and providing a pair of unwanted solution ponds in both sides of recess for substrate of supporting base with an interval longer than that of above wells. CONSTITUTION:A CdTe substrate 12 is provided in a recess 13 of supporting base 11, it is heated under H2 and the Hg1-XCdXTe solution is generated within the wells 18, 20. The solution 17 of the bottom part of well 18 is wasted 101 to the well 14 of base 11 after sliding B. The pure solution 17 is placed in contact with the substrate 12 by the sliding and the surface is melt back. The solution 19 of the bottom part is wasted to the well 15 after sliding C. Moreover, the pure solution 19 is placed in contact with the substrate 12 by the sliding C and an epitaxial layer is formed by lowering a temperature with the specified gradient. Thereby, a high quality epitaxial layer having no crystal defect can be obtained. According to this structure, any component in the substrate does not enter the solution for epitaxial growth at the time of melt back and therefore an epitaxial layer which does not show fluctuation of concentration is easily formed in case a low concentration epitaxial layer is formed on the substrate including high concentration impurity.
摘要翻译：目的：为了获得高质量的外延层，可以很好地提供良好的熔体回流溶液和良好的外延生长溶液，并且以比上述孔的间隔更长的间隔在凹槽的两侧为支撑基底提供一对不需要的溶液池。构成：CdTe基板12设置在支撑基座11的凹部13中，在H2下被加热，在孔18,20内产生Hg1-XCdXTe溶液。井18的底部溶液17被浪费了101 在滑动B之后到基体11的孔14。纯溶液17通过滑动与基底12接触，并且表面被回熔。底部的溶液19在滑动C之后被浪费到井15.此外，纯溶液19通过滑动C与基板12接触，并且通过以特定的梯度降低温度形成外延层。由此，可以获得不具有晶体缺陷的高质量外延层。根据该结构，在熔融时，衬底中的任何成分都不会进入用于外延生长的溶液，因此在形成低浓度外延层的情况下容易形成不显示浓度波动的外延层底物包括高浓度杂质。

24. 发明专利

JPS58215035A Liquid phase epitaxial growth device 失效
标题翻译：液相外延生长装置
公开(公告)号：JPS58215035A
公开(公告)日：1983-12-14
申请号：JP9891782
申请日：1982-06-08
申请人： Fujitsu Ltd
发明人： UEDA TOMOSHI , YOSHIKAWA MITSUO
IPC分类号： H01L31/04 , H01L21/208 , H01L21/368
CPC分类号： H01L21/02625 , H01L21/02562
摘要： PURPOSE:To prevent the generation of the convex part on a crystal layer to be formed on a substrate by a method wherein an inclination is provided at a concave part to bury the substrate, and the substrate is inclined to be buried. CONSTITUTION:The inclination is provided on the surface of the supporting base 11 of the epitaxial growth device, the inclination is provided to the concave part 13 to be buried with the CdTe substrate 12 in accordance therewith, and the substrate 12 to be buried is made to have the inclination. The Hg1-xCdxTe material is filled up in a liquid reservoir formed by the supporting base 11 having the inclination like this and a slide member 14 to transfer slidingly thereon. After then, the member 14 is transferred under the prescribed condition, and the liquid reservoir 15 accommodating with the liquid phase of Hg1-xCdxTe is made to stand still on the substrate 12. After then, the member 14 is transferred in the phase formed with the crystal layer on the substrate 12, and the remaining liquid phase of Hg1-xCdxTe fallen into disuse and remaining on the substrate 12 after completion of epitaxial growth is wiped to be removed by the member 14. At this time, the unnecessary Hg1-xCdxTe liquid phase having small viscosity, and moreover having small surface tension transfers to the C direction at the edge part of the lower side of the substrate 12.
摘要翻译：目的：为了防止在基板上形成的结晶层上产生凸部，通过在凹部设置倾斜部来埋设基板的方法，并且基板倾向于埋入。构成：在外延生长装置的支撑基体11的表面上设置倾斜度，根据CdTe基板12将其倾斜设置到与CdTe基板12一起埋入的凹部13，并且将要埋设的基板12 有倾向。将Hg1-xCdxTe材料填充在由具有这样倾斜的支撑基座11形成的液体储存器中，以及滑动构件14，以在其上滑动地转移。然后，在规定条件下转移构件14，使容纳有Hg1-xCdxTe的液相的储液器15静止在基板12上。然后，将构件14转移到形成有衬底12上的晶体层和Hg1-xCdxTe的剩余液相掉下来，并且在完成外延生长之后残留在衬底12上被擦拭以被构件14除去。此时，不必要的Hg1-xCdxTe 液相具有小的粘度，而且在基体12的下侧的边缘部分具有小的表面张力转移到C方向。

25. 发明专利

JPS58196027A Liquid phase epitaxial growing device 失效
标题翻译：液相外延生长装置
公开(公告)号：JPS58196027A
公开(公告)日：1983-11-15
申请号：JP7974982
申请日：1982-05-11
申请人： Fujitsu Ltd
发明人： ITOU MICHIHARU , YOSHIKAWA MITSUO , MARUYAMA KENJI , UEDA TOMOSHI
IPC分类号： H01L31/0264 , H01L21/208 , H01L21/368
CPC分类号： H01L21/02625 , H01L21/02562
摘要： PURPOSE:To prevent the composition of ingredients of a crystalline layer from being varied by arranging a container with a heating device wherein Hg is accommodated between a carrier gas introducing inlet provided at the upper portion of a reaction tube an a growing jig. CONSTITUTION:A reaction tube 21 is made various by means of an air exhausting valve 37, and after that the valve 37 is closed while H2 gas is being introduced through a gas introducing tube 31 and a gas discharging valve 38 is then opened. After crystalline layer forming materials 27 of mercury, cadmium and tellurium filled up inside a liquid storage of a slide member 25 are melted down, the liquid storage 28 is placed over a stratum 26 embedded in a recess of a supporting member 24 by causing the member 25 to rotatably slide, and a crystalline layer is caused to form on the stratum 26. At this time, H2 gas flowing into the tube 31 saturates the vapor of Hg inside an Hg accommodated container 33 and as H2 carrier gas saturated by Hg uniformly reaches over the liquid storage 28, the composition of the crystalline layer can be made uniform.
摘要翻译：目的：为了防止结晶层成分的组成变化，通过将加热装置设置在容器中，其中Hg容纳在设置在反应管上部的载气导入口和生长夹具之间。构成：通过排气阀37将反应管21制成各种，然后在通过气体导入管31引入氢气的同时关闭阀37，然后打开气体排出阀38。在将滑动构件25的液体储存器内填充的水银，镉和碲的晶体层形成材料27熔化之后，通过使该构件的构件嵌入在支撑构件24的凹部中的层26上 25旋转地滑动，并且在层26上形成结晶层。此时，流入管31的H 2气体使Hg容纳容器33内的Hg的蒸气饱和，并且由Hg饱和的H2载气均匀地达到在液体储存器28上方，可以使结晶层的组成均匀。

26. 发明专利

JP2014506960A Method and apparatus for coating substrates 有权
公开(公告)号：JP2014506960A
公开(公告)日：2014-03-20
申请号：JP2013553963
申请日：2012-02-20
申请人：ツェーテーエフ・ゾラール・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング
发明人：ハル・ミヒャエル , リヒター・ヒルマー , ボサート・シュテファン , シュトイテン・ラルフ , ゲオルゲ・シュテファン , ティッテル・ゼバスティアン , シャーデ・ヴェルナー
IPC分类号： C23C14/54 , C03C17/09 , C03C17/22 , C23C14/56 , H01L31/06
CPC分类号： H01L31/18 , C03C17/002 , C03C17/09 , C23C14/541 , C23C14/56 , C23C14/568 , C23C16/46 , H01L21/02422 , H01L21/02557 , H01L21/02562 , H01L21/02568 , H01L21/02617 , H01L21/67109 , H01L21/67706 , H01L21/6776 , H01L31/1828 , H01L31/1876 , H01L31/1892 , Y02E10/543 , Y02P70/521
摘要：板状の基体、特に太陽電池を製造するためのガラス基体をコーティングするための方法および装置を紹介する。この方法は、搬送シャフト上で加熱チャンバおよびコーティングチャンバを通過していく基体を、上面および下面で異なる強さで加熱することを含んでおり、こうすることで、基体が軟化により取り扱えなくなるおそれなくコーティング温度を上昇させることができる。この方法の実施に適しており、独立した加熱システムを備えた加熱チャンバおよびコーティングチャンバならびに搬送システムを有する装置を説明する。

30. 发明专利

JP2012057254A TELLURIUM (Te) PRECURSOR FOR MANUFACTURING PHASE-CHANGE MEMORY MATERIAL 有权
标题翻译：用于制造相变记忆材料的TELLURIUM（Te）前置器
公开(公告)号：JP2012057254A
公开(公告)日：2012-03-22
申请号：JP2011262709
申请日：2011-11-30
申请人： Air Products & Chemicals Inc , エアプロダクツアンドケミカルズインコーポレイテッドAir Products And Chemicals Incorporated
发明人： XIAO MANCHAO , GAFFNEY THOMAS RICHARD
IPC分类号： C23C16/30 , C07B59/00 , C07C395/00 , H01L27/105
CPC分类号： C23C16/06 , C01B19/002 , C07B59/004 , C07B2200/05 , C07C395/00 , C23C16/305 , C23C16/45525 , C23C16/56 , H01L21/02365 , H01L21/02562 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： PROBLEM TO BE SOLVED: To provide a Te-containing composition.SOLUTION: A composition containing Te comprises a deuterated organo tellurol having a general structural formula of R-Te-D. In the general structural formula, R is selected from: a linear, branched or annular 1-10C alkyl group or alkenyl group; a 6-12C aromatic group; a dialkylimino group; an organosilyl group; and an organogermyl group.

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