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21. 发明专利

JP2011105524A Apparatus for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置
公开(公告)号：JP2011105524A
公开(公告)日：2011-06-02
申请号：JP2009259234
申请日：2009-11-12
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： TAKAHANE HIDETAKA , KONDO HIROYUKI , HIROSE FUSAO , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal, which provides a single crystal having an enlarged diameter and an elongated length while keeping the quality of the crystal. SOLUTION: In the apparatus for producing an SiC single crystal, a guide part 40 for introducing a sublimation gas to a seed crystal 23 and constituting a growth space of the SiC single crystal 22 is arranged between the seed crystal 23 and an SiC raw material 30 in a container body 10. The guide part 40 is configured to have a plurality of guide members 41-44 equipped with cylindrical parts 41a-44a each having a hollow part. The plurality of guide members 41-44 are provided inside the container body 10 while the guide members are separated from each other in the axis direction of the container body 10. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造SiC单晶的装置，其提供具有扩大直径和细长长度的单晶，同时保持晶体的质量。解决方案：在用于制造SiC单晶的装置中，将用于将升华气体引入晶种23并构成SiC单晶22的生长空间的引导部40布置在晶种23和SiC之间原料30在容器主体10中。引导部40构成为具有多个具有圆筒部41a〜44a的导向部件41〜44，各部具有中空部。多个引导构件41-44设置在容器主体10内部，同时引导构件在容器主体10的轴线方向上彼此分离。版权所有（C）2011，JPO＆INPIT

22. 发明专利

JP2012072034A Method for manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的方法
公开(公告)号：JP2012072034A
公开(公告)日：2012-04-12
申请号：JP2010219348
申请日：2010-09-29
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B23/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC single crystal that can grow a high quality SiC single crystal without forming a groove on a growth surface of a seed crystal.SOLUTION: The method includes: a seed crystal preparing step of preparing the seed crystal 30 which has a surface, serving as the growth surface 30a, inclined at a predetermined angle from a (0001) plane, including a threading dislocation 31 that reaches the growth surface 30a, and having a stacking fault generation region 30b configured to cause a stacking fault 37 in the growing SiC single crystal 40 at an end portion of the growth surface 30a in an offset direction that is a direction of a vector defined by projecting a normal vector of the (0001) plane onto the growth surface 30a; and a SiC single crystal growing step of growing the SiC single crystal 40 on the growth surface 30a of the seed crystal 30.
摘要翻译：要解决的问题：提供一种制造可以生长高品质SiC单晶而不在籽晶的生长表面上形成凹槽的SiC单晶的方法。解决方案：该方法包括：种子晶体制备步骤，准备具有作为生长表面30a的表面的晶种30，其从（0001）面以预定角度倾斜，包括穿透位错31，所述穿透位错31 到达生长面30a，并且具有层叠故障产生区域30b，其被构造成在成长面30a的端部处的生长的SiC单晶40中产生层叠错误37，该偏移方向是由将（0001）面的法线向量投影到生长面30a上; 以及在晶种30的生长面30a上生长SiC单晶40的SiC单晶生长工序。（C）2012，JPO＆INPIT

23. 发明专利

JP2011011926A Apparatus for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置
公开(公告)号：JP2011011926A
公开(公告)日：2011-01-20
申请号：JP2009155573
申请日：2009-06-30
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal where the occurrence of a different polymorphic crystal and a different orientation crystal is suppressed by forming a temperature distribution to a surface on the way of growing a seed crystal and the SiC single crystal without arranging the seed crystal shifting from the center axis of a crucible.SOLUTION: A ring member 5 is provided as a temperature distribution forming member. The distance D1 from the ring member 5 to a low density spiral dislocation region 3b and the distance D2 from the ring member 5 to a region 3a in which spiral dislocation can occur are varied by forming a flat surface 5c on the ring member 5. The temperature distribution is thereby formed on an SiC single crystal substrate 3 which may be the seed crystal and the surface on the way of growing the SiC single crystal based on the structure of a crystal growing apparatus even if the center of the SiC single crystal substrate 3 is coincident with the center of a graphite crucible 1.
摘要翻译：要解决的问题：提供一种用于制造SiC单晶的装置，其中通过在种子生长途中形成对表面的温度分布来抑制不同多晶型晶体和不同取向晶体的发生，并且SiC单晶晶体，而不将晶种从坩埚的中心轴线移位。解决方案：提供环形构件5作为温度分布形成构件。从环状构件5到低密度螺旋位错区域3b的距离D1以及从环状构件5到能够发生螺旋位错的区域3a的距离D2通过在环状构件5上形成平坦面5c而变化。由此，在SiC单晶衬底3上形成温度分布，SiC单晶衬底3可以是晶体和基于晶体生长设备的结构生长SiC单晶的表面，即使SiC单晶衬底3的中心与石墨坩埚1的中心重合。

24. 发明专利

JP2012046377A METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 有权
标题翻译：制造SiC单晶的方法
公开(公告)号：JP2012046377A
公开(公告)日：2012-03-08
申请号：JP2010190102
申请日：2010-08-26
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , ADACHI AYUMI
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , C30B23/002 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC single crystal, which has only a small risk of forming defects and can manufacture a homogeneous SiC single crystal.SOLUTION: The method for manufacturing a SiC single crystal includes a first growth step of growing a fresh crystal on a surface of a SiC seed crystal 12 using the SiC seed crystal 12 having the following constitution. (1) The SiC seed crystal 12 has a main growth plane composed of a plurality of sub-growth planes. (2) A main direction having the plurality of sub-growth planes is present in an arbitrary direction from the uppermost part of the {0001} plane on the main growth plane of the SiC seed crystal 12 toward the outer periphery of the main growth plane. (3) If the sub-growth planes present along the main direction from the uppermost part of the {0001} plane toward the outer periphery are successively called a first sub-growth plane, a second sub-growth plane, a n-th sub-growth plane (n≥2), the off-set angle θof a k-th sub-growth plane (1≤k≤n-1) and the off-set angle θof a (k+1)-th sub-growth plane satisfies a relationship of θ
摘要翻译：要解决的问题：提供一种SiC单晶的制造方法，其具有形成缺陷的风险很小并且可以制造均匀的SiC单晶。解决方案：制造SiC单晶的方法包括使用具有以下结构的SiC晶种12在SiC晶种12的表面上生长新晶体的第一生长步骤。（1）SiC晶种12具有由多个副生长面构成的主生长面。（2）具有多个副生长面的主方向从SiC籽晶12的主生长面上的ä0001}面的最上部向主生长面的外周方向存在。（3）如果沿着主方向从ä0001}平面的最上部朝向外周存在的副生长面被连续地称为第一副生长面，第二次生长面，第n次生长面，生长平面（n≥2），第k次生长面（1≤k≤n-1）的偏移角θ k 和偏移（k + 1）次生长面的角度θ k + 1 满足θ k <θ k + 1 。版权所有（C）2012，JPO＆INPIT

25. 发明专利

JP2011219336A Method and apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的方法和装置
公开(公告)号：JP2011219336A
公开(公告)日：2011-11-04
申请号：JP2010092960
申请日：2010-04-14
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal which allows to supply an appropriate amount of carbon atoms to a SiC single crystal while suppressing mixing of an inclusion (a large mass) of carbon powder discharged from a crucible with the SiC single crystal.SOLUTION: In a hollow of a crucible 4, a cylindrical material 10 which has a diameter smaller than the inner diameter of a container body 2 and is made of metal carbide is disposed apart from an inner wall 2a of the container body 2 along the inner wall 2a on a powder raw material 8. While, on a lid member 3, a coating film 3b of metal carbide is formed on the side of the container body 2 from a seed crystal 7 of an inner wall 3a of the lid member 3. This suppresses discharge of masses of carbon powder from the lid member 3, and an appropriate amount of the carbon powder discharged from the inner wall 2a of the container body 2 is supplied to the SiC single crystal 9 during growth.
摘要翻译：要解决的问题：提供一种用于制造碳化硅单晶的装置，其允许向SiC单晶提供适量的碳原子，同时抑制从碳化硅单晶排出的夹杂物（大量）的碳粉的混合具有SiC单晶的坩埚。解决方案：在坩埚4的中空中，直径小于容器主体2的内径并且由金属碳化物制成的圆柱形材料10与容器主体2的内壁2a分开设置沿着内壁2a在粉末原料8上。同时，在盖构件3上，从容器主体2的内壁3a的晶种7形成金属碳化物的涂膜3b 从而抑制碳粉末从盖部件3的排出，在生长时向碳化硅单晶9供给适当量的从容器主体2的内壁2a排出的碳粉末。版权所有（C）2012，JPO＆INPIT

26. 发明专利

JP2011219294A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011219294A
公开(公告)日：2011-11-04
申请号：JP2010088627
申请日：2010-04-07
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal, by which cracking and distortion of the SiC single crystal are suppressed.SOLUTION: In the method for producing a SiC single crystal, projection growth wherein the SiC single crystal 6 is grown to have such a projection shape that the central part of the SiC single crystal 6 is projected from the outer edge part and recess growth wherein the central part of the SiC single crystal 6 is recessed from the outer edge part are performed in order. A tensile stress is generated in the vicinity of the central part of the SiC single crystal 6 and a compression stress is generated in the outer edge part during the projection growth, and a compression stress is generated in the vicinity of the central part of the SiC single crystal 6 and a tensile stress is generated in the outer edge part during the recess growth. Then, a reverse stress is generated when the SiC single crystal 6 is cooled. Thereby, when the SiC single crystal 6 is cooled, a region where both of the compression stress and tensile stress are generated is provided in the vicinity of the central part of the SiC single crystal 6, and a region where both of the compression stress and tensile stress are generated is provided similarly in the outer edge part. Consequently, it is possible to suppress cracking and distortion of the SiC single crystal during cooling.
摘要翻译：待解决的问题：提供一种SiC单晶的制造方法，其中SiC单晶的破裂和变形被抑制。解决方案：在SiC单晶的制造方法中，SiC单晶6生长为具有使SiC单晶6的中央部从外缘部突出的突起形状的突起生长和凹部其中SiC单晶6的中心部分从外边缘部分凹陷的生长依次进行。在SiC单晶6的中央部附近产生拉伸应力，在投影生长期间在外缘部产生压缩应力，在SiC的中心部附近产生压缩应力单晶6，并且在凹部生长期间在外边缘部分产生拉伸应力。然后，当SiC单晶6被冷却时产生反向应力。因此，当SiC单晶6被冷却时，在SiC单晶6的中央部附近设置压缩应力和拉伸应力两者的区域，压缩应力和在外边缘部分类似地设置拉伸应力。因此，可以抑制冷却时SiC单晶的开裂和变形。版权所有（C）2012，JPO＆INPIT

27. 发明专利

JP2013116840A Sic single crystal, sic wafer, and semiconductor device 有权
标题翻译： SIC单晶，SIC晶圆和半导体器件
公开(公告)号：JP2013116840A
公开(公告)日：2013-06-13
申请号：JP2011265342
申请日：2011-12-02
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , ADACHI AYUMI
IPC分类号： C30B29/36
CPC分类号： H01L29/045 , C30B23/025 , C30B29/36 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide an SiC single crystal having a Burgers vector in a direction within the {0001} plane (mainly parallel to the direction) with low density of dislocation (basal surface dislocation and penetration type edge dislocation), and to provide an SiC wafer and a semiconductor device obtained from such an SiC single crystal.SOLUTION: There are provided an SiC single crystal that includes a low density dislocation region (A) such that the density of dislocations that have a Burgers vector in a direction within the {0001} plane (mainly parallel to the direction) is equal to or less than 3700 cm/cm, and an SiC wafer and a semiconductor device may be obtained by using such an SiC single crystal. The SiC single crystal is obtained by cutting a c-surface grown seed crystal with a high offset angle from an a-surface grown crystal, growing the c-surface so that the spiral dislocation density introduced in the c-surface facet is within a predetermined range, cutting a c-surface grown crystal with a low offset angle from the resulting c-surface grown crystal, and growing the c-surface so that the spiral dislocation density introduced in the c-surface facet is within a predetermined range.
摘要翻译：要解决的问题：提供具有低密度位错（基面错位和穿透型）的在ä0001}平面（主要平行于<11-20>方向）的方向上具有汉堡矢量的SiC单晶边缘位错），并提供从这种SiC单晶获得的SiC晶片和半导体器件。解决方案：提供了包括低密度位错区域（A）的SiC单晶，使得在ä0001}平面内的方向上具有汉堡矢量的位错密度（主要平行于<11-20 >方向）为3700cm / cm以下，可以通过使用这种SiC单晶来获得SiC晶片和半导体器件。通过从表面生长的晶体切割具有高偏移角的c面生长的晶种获得SiC单晶，生长c面，使得在c面表面中引入的螺旋位错密度在预定的从产生的c面生长晶体切割具有低偏移角的c面生长晶体，并且生长c面，使得在c面表面中引入的螺旋位错密度在预定范围内。版权所有（C）2013，JPO＆INPIT

28. 发明专利

JP2012116676A Method of manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的方法
公开(公告)号：JP2012116676A
公开(公告)日：2012-06-21
申请号：JP2010265805
申请日：2010-11-29
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , ADACHI AYUMI
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal capable of manufacturing a high-quality SiC single crystal being free from mixing of different polymorphism and hardly including faults such as stacking faults and spiral dislocations.SOLUTION: The method of manufacturing an SiC single crystal includes a first growth step and a re-growth step. In the first growth step, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth step, a k-th growth step, wherein a k-th seed crystal cut out from a (k-1)-th SiC single crystal (2≤k≤n) is used to re-grow a k-th SiC single crystal, is repeated for (n-1) times (n≥2). An offset angle θof the growth surface of the first seed crystal satisfies a relationship 4°
摘要翻译：解决的问题：提供一种制造能够制造高质量SiC单晶的SiC单晶的方法，所述SiC单晶不含不同多晶型的混合，并且几乎不包括诸如层叠缺陷和螺旋位错等缺陷。解决方案：制造SiC单晶的方法包括第一生长步骤和再生长步骤。在第一生长步骤中，使用由SiC制成的第一晶种来生长第一SiC单晶。在再生长步骤中，使用从第（k-1）个SiC单晶（2≤k≤n）切出的第k个晶种再生长第k个生长步骤（n-1）次（n≥2）重复。第一种晶的生长面的偏移角θ 1 满足关系4°<θ 1 ≤30°。至少在第k个生长步骤的（n-1）次（n≥2）的一次中，关系θ <θ k-1 。第n种子的生长面的偏移角θ n 满足关系θ n <θ 1 。所有第k个晶种（1≤k≤n）中的每一个在偏移方向的上游侧端部具有螺旋位错发生区域。版权所有（C）2012，JPO＆INPIT

29. 发明专利

JP2012020893A Apparatus for manufacturing silicon carbide single crystal, and method for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的装置，以及用于制造碳化硅单晶的方法
公开(公告)号：JP2012020893A
公开(公告)日：2012-02-02
申请号：JP2010158838
申请日：2010-07-13
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To enable to suppress the generation of a dissimilar polymorphic or a different orientation crystal by controlling the surface shape in the middle of the growth of a seed crystal and an SiC single crystal, even not arranging the seed crystal shifting from the center axis of a crucible.SOLUTION: A shielding part 6 which has a shielding plate 6a which is oppositely arranged to an SiC single crystal substrate 3 becoming a seed crystal is provided. In addition, a sublimation gas is made to be selectively supplied to a region 3a in which screw dislocation can be generated through a gas supply hole 6b prepared at the shielding plate 6a of the shielding part 6. In this way, it becomes possible to make the shape of a convex in which the amount of growth become largest at the side of the region 3a in which screw dislocation can be generated rather than the center of the SiC single crystal substrate 3, it is not necessary to make the thickness of a pedestal 1c unsymmetrical, and to prepare the temperature distribution on the surface 4a in the middle of growth, and the generation of a dissimilar polymorphism or a different orientation crystal can be suppressed.
摘要翻译：解决的问题为了能够通过控制晶种和SiC单晶生长中期的表面形状来抑制异种多晶型物或不同取向晶体的产生，即使不排列晶种从坩埚的中心轴线移动。解决方案：提供一种屏蔽部分6，其具有与形成晶种的SiC单晶衬底3相对布置的屏蔽板6a。此外，升华气体被选择性地供给到通过在屏蔽部6的屏蔽板6a处制备的供气孔6b可以产生螺旋位错的区域3a。这样，可以使在可以产生螺旋位错的区域3a侧的生长量变得最大的凸部的形状而不是SiC单晶基板3的中心，不需要使基座的厚度 1c不对称，并且在生长中期制备表面4a上的温度分布，并且可以抑制异种多晶型或不同取向晶体的产生。版权所有（C）2012，JPO＆INPIT

30. 发明专利

JP2011105525A Apparatus for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置
公开(公告)号：JP2011105525A
公开(公告)日：2011-06-02
申请号：JP2009259235
申请日：2009-11-12
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： TAKAHANE HIDETAKA , KONDO HIROYUKI , HIROSE FUSAO , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal, which provides a single crystal having an enlarged diameter and an elongated length while keeping the quality of the crystal. SOLUTION: In the apparatus for producing an SiC single crystal, a guide part 40 is constituted by laminating a plurality of guide members 41-44 equipped with cylindrical parts 41a-44a each having a hollow part in the axis direction of a container body 10. In either one of opposing distal end faces of two guide members 41-44 adjacent in the lamination direction, a plurality of projected parts projecting toward the distal end face of other guide member are provided in a state separated in a circumferential direction, and the guide member on the seed crystal side is laminated on the guide member on the SiC raw material 30 side through the projected parts. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造SiC单晶的装置，其提供具有扩大直径和细长长度的单晶，同时保持晶体的质量。解决方案：在用于制造SiC单晶的装置中，引导部40通过层叠多个引导构件41-44而构成，多个引导构件41-44具有在容器的轴向方向上具有中空部的圆筒部41a〜44a 在沿着层叠方向相邻的两个引导构件41-44的相对的远端面中的任一个中，沿着圆周方向分离的状态设置有朝向另一个引导构件的前端面突出的多个突起部，并且晶种侧的引导构件通过突出部分层叠在SiC原料30侧的引导构件上。版权所有（C）2011，JPO＆INPIT

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