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21. 发明专利

JPS59152217A Purification of alkali halide 失效
标题翻译：碱性化合物的纯化
公开(公告)号：JPS59152217A
公开(公告)日：1984-08-30
申请号：JP2369183
申请日：1983-02-17
申请人： Toshiba Corp
发明人： ANZAI KAZUO , SHINOZAKI KAZUO , AKASAKA YOSHIHIRO
IPC分类号： C01D3/20 , C01D17/00
摘要： PURPOSE: To purify an alkali halide by a relatively simple process, without producing black foreign materials, by heating an alkali halide powder in an oxidizing atmosphere, and successively heating in a non-oxidative atmosphere until the halide is melted.
CONSTITUTION: Powder of an alkali halide such as CsI, CsBr or their mixture, etc. is heated in an oxidizing atmosphere from room temperature to a temperature between about 400°C and 500°C by increasing the temperature to the desired temperature range at a slow heating rate, i.e. about 100°C/hr, or keeping the powder at the temperature. The heat-treated alkali halide powder is heated and melted in a non-oxidative atmosphere to obtain a purified alkali halide ingot preventing the generation of black foreign materials composed mainly of carbon. The oxidizing atmosphere is preferably oxygen or an oxygen-containing gas, and the non-oxidative atmosphere is preferably hydrogen or a hydrogen-containing gas.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过相对简单的方法纯化碱金属卤化物，不会产生黑色异物，通过在氧化气氛中加热碱金属卤化物粉末，并在非氧化性气氛中连续加热直到卤化物熔化。构成：将碱金属卤化物如CsI，CsBr或它们的混合物等的粉末在氧化气氛中从室温加热至约400摄氏度至500摄氏度之间的温度，将温度升高至所需温度范围以约100℃/小时的缓慢加热速率，或将粉末保持在该温度。将热处理的碱金属卤化物粉末在非氧化性气氛中加热熔融，得到防止产生主要由碳组成的黑色异物的纯化碱金属卤化物锭。氧化气氛优选为氧或含氧气体，非氧化性气氛优选为氢或含氢气体。

22. 发明专利

JPS5960403A Fiber for transmission of infrared light 失效
标题翻译：用于传输红外光的光纤
公开(公告)号：JPS5960403A
公开(公告)日：1984-04-06
申请号：JP16978282
申请日：1982-09-30
申请人： Toshiba Corp
发明人： AKASAKA YOSHIHIRO , ANZAI KAZUO
IPC分类号： C30B29/12 , G02B6/10
CPC分类号： G02B6/102
摘要： PURPOSE:To prevent the direct contact of an IR transmission body with an external pipe and the generation of heat and fire near the contact point by installing a cylindrical pipe made of a halide of a univalent metal having a refractive index smaller than the refractive index of a fiber in the space between said transmission body and the external pipe. CONSTITUTION:A cylindrical pipe 3 having a refractive index smaller than an IR transmission body 1 is provided in the space between the body 1 and an external pipe 2. The body 1 which is a halide of a univalent metal is Gu, CsBr, etc. and an alkali halide mixture contg. >=2 thereof. The pipe 3 has the refractive index lower than the refractive index of the body 1, and CsI, CsBr, CsCl, RbI, etc. and an alkali halide mixture contg. at least >=2 kinds among said components are used for the same. Said pipe is formed at 100-300mum in terms of production and flexibility. A ''Teflon'' pipe, Al pipe, stainless steel pipe, plastic pipe, etc. are preferred as the pipe 2.
摘要翻译：目的：为了防止IR传输体与外部管道的直接接触，以及通过安装由折射率小于折射率的折射率的一价卤化物的卤化物制成的圆柱形管，在接触点附近产生热量和火焰在所述传动体和外管之间的空间中的纤维。构成：折射率小于IR透射体1的圆筒状管3设置在主体1和外部管2之间的空间中。作为一价卤化物的主体1为Gu，CsBr等。和碱卤化物混合物 > = 2。管3的折射率低于主体1的折射率，CsI，CsBr，CsCl，RbI等和碱金属卤化物混合物所述组件中至少> = 2种用于相同。在生产和灵活性方面，所述管形成为100-300mum。作为管2，优选“特氟隆”管，铝管，不锈钢管，塑料管等。

23. 发明专利

JPS5957994A Fiber for transmitting infrared light 失效
标题翻译：用于发射红外光的光纤
公开(公告)号：JPS5957994A
公开(公告)日：1984-04-03
申请号：JP16655182
申请日：1982-09-27
申请人： Toshiba Corp
发明人： IMAGAWA HIROSHI , ANZAI KAZUO , SHINOZAKI KAZUO , KASORI MITSUO
IPC分类号： G02B1/02 , C01D17/00 , C30B11/00 , C30B29/12 , G02B6/00 , G02B6/02
CPC分类号： C30B11/00 , C30B29/62
摘要： PURPOSE:To manufacture easily the titled fiber causing hardly deterioration due to repeated bending, by using a solid soln. consisting of a specified mol% of CsBr and the balance CsI as a material. CONSTITUTION:A fiber for transmitting infrared light is made of a solid soln. consisting of CsBr and CsI. The CsBr content is >=95mol% or
摘要翻译：目的：通过使用固体溶胶容易地制造由于反复弯曲而导致的几乎不劣化的标题纤维。由指定的摩尔％的CsBr和余量的CsI作为材料组成。构成：用于透射红外光的光纤由固体溶胶制成。由CsBr和CsI组成。 CsBr含量≥95mol％或≤13mol％。纤维优于由简单固体溶胶制成的纤维。的CsBr或CsI。由于固体溶胶。由CsBr和CsI组成的具有较高的硬度和伸长的弹性极限，当纤维在一定范围内的弯曲反复弯曲时，由于塑性变形引起的纤维的劣化降低。当使用有利于通过熔化制造高纯度锭的石英舟时，不需要使用气态卤素或气态卤化氢的气氛，需要麻烦的处理。

24. 发明专利

JPH09175867A ALUMINUM NITRIDE SINTERED PRODUCT 失效
公开(公告)号：JPH09175867A
公开(公告)日：1997-07-08
申请号：JP1008097
申请日：1997-01-06
申请人： TOSHIBA CORP
发明人： KASORI MITSUO , SHINOZAKI KAZUO , ANZAI KAZUO , TSUGE AKIHIKO
IPC分类号： C04B35/581 , H01L23/15 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To obtain an aluminum nitride sintered product comprising aluminum nitride, a rare earth element-aluminum oxide and an alkaline earth element- aluminum oxide, and improved in density, heat conductivity and strengths. SOLUTION: Aluminum nitride having an oxygen content of 0.001-7wt.% in an amount of 80-99.99wt.%, the powder of a rare earth element compound in an amount of 0.01-20wt.% in the state of an oxide, and the powder of an alkaline earth metal oxide in an amount of 0.01-20wt.% in the state of the oxide are mixed. The mixture is further mixed with an organic binder, granulated, press-molded, and subsequently sintered in a nitrogen gas atmosphere at 1600-1700 deg.C to produce the aluminum nitride sintered product comprising aluminum nitride, the rare earth element-aluminum oxide and the alkaline earth- aluminum oxide, not containing silicon and silicon compounds, and having a heat conductivity of >=79W/m.k.

25. 发明专利

JPH0613721A MANUFACTURE OF HIGH THERMAL CONDUCTIVE CIRCUIT SUBSTRATE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0613721A
公开(公告)日：1994-01-21
申请号：JP4176893
申请日：1993-02-08
申请人： TOSHIBA CORP
发明人： ANZAI KAZUO , SHINOZAKI KAZUO , KASORI MITSUO , TSUGE AKIHIKO , IWASE NOBUO
IPC分类号： C04B35/581 , C04B35/58 , H05K1/03 , H05K1/16
摘要： PURPOSE:To obtain a circuit substrate having excellent high heat conductivity, high withstand voltage and the like by a method wherein conductive paste or dielectric paste is printed on the aluminum nitride ceramic substrate formed by calcinating by adding a kind selected from yttrium, rare-earth metal and alkaline earth metal, and they are calcined at the specific or lower temperature. CONSTITUTION:Yttrium oxide equipment 5wt.% of Y-element is added to aluminum nitride AlN raw material powder of 95wt.%, and after they have been mixed and molded, the molded body is sintered at 1800 deg.C in nitrogen gas, and a dense Al substrate is obtained. Then, the AlN substrate is coated with Au paste, an Au thick film conductor path pattern of about 15mum thick is formed, and it is calcined at 580 deg.C for ten minutes. The metal wettability of a sintered body, which is substantially consisting of AlN only, is very poor, but by adding yttrium, rare-earth metal and alkaline earth metal, a conductor path in which thick film conductive paste is used, can be formed without deterioration in characteristics of the AlN substrate of high heat conductivity.

26. 发明专利

JPH01176275A PRODUCTION OF NITRIDE CERAMIC 失效
公开(公告)号：JPH01176275A
公开(公告)日：1989-07-12
申请号：JP7188
申请日：1988-01-01
申请人： TOSHIBA CORP
发明人： ANZAI KAZUO , TAKANO TAKESHI
IPC分类号： C04B35/626 , C04B35/58
摘要： PURPOSE:To obtain the title ceramic with little contamination of impurities having adverse effect on the properties thereof, by grinding and mixing a raw material consisting mainly of nitride ceramic using respective grinding and mixing jigs with the surfaces consisting of AlN ceramic, followed by forming and sintering the resultant mixture. CONSTITUTION:A grinding/mixing vessel 1 with the inner wall, balls 2, agitators 3, etc. coated with aluminum nitride ceramic is prepared. Using this vessel 1, a raw material consisting mainly of nitride ceramic (e.g. silicon nitride, aluminum nitride) is ground and mixed to produce the starting material. Thence, this starting material is formed and sintered to obtain the title nitride ceramic. The above process will suppress the contamination of impurities having adverse effect on the characteristics of said nitride ceramic, thus enabling silicon nitride of high strength, aluminum nitride of great thermal conductivity, etc., to be produced.

27. 发明专利

JPS6318696A MANUFACTURE OF CERAMIC CIRCUIT BOARD 失效
公开(公告)号：JPS6318696A
公开(公告)日：1988-01-26
申请号：JP16195386
申请日：1986-07-11
申请人： TOSHIBA CORP
发明人： ANZAI KAZUO , SHINOZAKI KAZUO , TSUGE AKIHIKO
IPC分类号： H05K1/02 , H05K3/38

28. 发明专利

JPS62224952A HEAT CONDUCTIVE SUBSTRATE 失效
公开(公告)号：JPS62224952A
公开(公告)日：1987-10-02
申请号：JP6709386
申请日：1986-03-27
申请人： TOSHIBA CORP
发明人： IWASE NOBUO , ANZAI KAZUO , TAKAHASHI TAKASHI , SUGIURA YASUYUKI
IPC分类号： H01L23/36 , H01L23/15 , H01L23/373 , H05K1/03 , H05K3/38
摘要： PURPOSE:To obtain a substrate having large junction strength between AlN substrate and metallize layer with less fluctuation and good yield by forming the surface of calcined AlN substrate with particular roughness and then forming thereon the metallize layer. CONSTITUTION:The surface of calcined AlN substrate 1 is formed with roughness (Rmax) of about 2-20mum and a metallize layer 2 is formed thereon. For instance, a green sheet, obtained by adding yttrium oxide of 3wt% to the aluminum nitride powder, milling and mixing them and thereafter adding a binder for the sheet formation by the doctor blade method, is calcined by heating it for 2hr AlN substrate 1 is sent to the horning process for obtaining the surface roughness (Rmax) of 5-15mum. Thereafter, the conductor paste mainly composed of Mo is printed and dried up. It is then sent to a vacuum furnace for calcination in order to obtain a metallized layer 2 in the thickness of 10mum. it is then cut with a diamond saw into specified small size. Thereafter, it is subjected to the N plating in the thickness of 2mum and Au plating in he thickness of 1.5mum.

29. 发明专利

JPS62219546A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62219546A
公开(公告)日：1987-09-26
申请号：JP6189486
申请日：1986-03-19
申请人： TOSHIBA CORP
发明人： SUGIURA YASUYUKI , TAKAHASHI TAKASHI , IWASE NOBUO , ANZAI KAZUO
IPC分类号： H05K1/03 , H01L23/12 , H01L23/14 , H01L23/15 , H01L23/498
摘要： PURPOSE:To manufacture a semiconductor device with high output and excellent reliability at low cost by a method wherein both surfaces of an AlN substrate are junctioned with Cu sheets; one surface of Cu sheet is junctioned with an Si chip; and the other surface is junctioned with a metallic sheet. CONSTITUTION:An AlN substrate manufactured by the atmospheric sintering process is heated in the air to form an alumina oxide layer on the surface thereof. Next, Cu sheets made of electrolytic tough pitch copper are brought into contact with both sides of AlN substrate and heated in nitrogen atmosphere at the temperature not exceeding the melting point of Cu (1,083 deg.C) but exceeding the eutectic temperature (1,065 deg.C) of Cu-O to junction both Cu sheets. Later, cut off Cu sheets 2 on both surfaces of the AlN substraute 1 are plated with Ni 3 and Au 4 and then one surface is soldered with an Si chip 6 using an Au-Si solder 5 while the other surface is soldered with a metallic sheet 7 using a Pb-Sn solder 9.

30. 发明专利

JPS61296788A CIRCUIT BOARD 失效
公开(公告)号：JPS61296788A
公开(公告)日：1986-12-27
申请号：JP13790485
申请日：1985-06-26
申请人： TOSHIBA CORP
发明人： SAITO KAZUYOSHI , IWASE NOBUO , SHINOZAKI KAZUO , ANZAI KAZUO
IPC分类号： H05K1/02

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