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21. 发明专利

JP2578126B2 失效
公开(公告)号：JP2578126B2
公开(公告)日：1997-02-05
申请号：JP19710687
申请日：1987-08-06
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , SUZUKI OSAMU , SAITO MASAYUKI , MATSUO HIDEYASU
IPC分类号： C30B15/10 , C30B29/06

22. 发明专利

JPH0543385A CARBON HEATER FOR FURNACE FOR PULLING UP SI SINGLE CRYSTAL 失效
公开(公告)号：JPH0543385A
公开(公告)日：1993-02-23
申请号：JP20580091
申请日：1991-08-16
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU
IPC分类号： C30B15/14 , C30B29/06
摘要： PURPOSE:To provide a carbon heater for a furnace for pulling up an Si single crystal, having sufficient mechanical strength and capable of easily and arbitrarily changing the temperature distribution. CONSTITUTION:The objective heater is composed of a heater main body 1 having cylindrical shape and furnished with alternately formed slits extending from the top edge downward and slits extending from the bottom upward and terminals 3 integrally attached to the heater main body 1. Through-holes 4 are opened at desired positions on each heater segment between two adjacent slits 2.

23. 发明专利

JPH03242397A METHOD FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH03242397A
公开(公告)日：1991-10-29
申请号：JP3554590
申请日：1990-02-16
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , ISHIKAWA TAKASHI
IPC分类号： C30B15/12 , C30B29/06
摘要： PURPOSE:To pull up a silicon single crystal at a low cost without suffering pollution by concentrically putting a quartz glass spiral in a quartz glass crucible, charging a silicon polycrystal therein and heating connecting part between the crucible and pipe. CONSTITUTION:A quartz glass pipe 3 is concentrically put in a quartz glass crucible 2 fitted in a graphite crucible 1 and simultaneously silicon polycrystal 4 is fitted in a region enclosed by a quartz glass crucible 2 and quartz glass pipe 3 and region enclosed by quartz glass pipe 3. Then outside of graphite crucible 1 is heated so that contact part of quartz glass crucible 2 with quartz glass pipe 3 is kept to be >=1500 deg.C through a heater. Fusion between quartz glass crucible 2 and quartz glass pipe 3 is carried out in parallel with dissolution of silicon polycrystal 4 by carrying out this state for about 3hr. When growth of silicon single crystal is carried out from the inner chamber 6, it is confirmed that fusion is dense, since growth is carried out without lowering silicon melt face in outer chamber 5.

24. 发明专利

JPH01148784A CRUCIBLE FOR SINGLE CRYSTAL PULLING UP DEVICE 失效
公开(公告)号：JPH01148784A
公开(公告)日：1989-06-12
申请号：JP30616887
申请日：1987-12-03
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , SUZUKI OSAMU , WAKASA YASUO , SATO NOBUYUKI
IPC分类号： C30B15/02 , C30B15/10 , H01L21/18
摘要： PURPOSE:To block the centripetal current on a melt surface and to prevent the deterioration in the characteristic of the single crystal due to the replenished granular raw material by fixing an annular member having an inner diameter larger than the diameter of the single crystal to a crucible coaxially with the crucible so that the lower end is placed below the melt surface. CONSTITUTION:The annular members 1 and 2 having an inner diameter larger than the diameter of the single crystal 8 to be pulled up are arranged in the crucible 5 for a single crystal pulling up device coaxially with the crucible 5 so that the lower ends are placed below the surface 7 of the melt 6 to be contained. The members 1 and 2 are fixed to the crucible 5 by the fixing members 3 and 4 provided above the melt surface 7. The single crystal 8 is pulled up from the melt 6 and grown, and a granular silicon polycrystal 10 is replenished into the crucible 5 through a pipe 9. As a result, the centripetal current of the melt 6 on the surface in the crucible 5 is blocked, and the infiltration of the replenished granule 10 into the single crystal 8 can be prevented.

25. 发明专利

JPS6442389A PULLING DEVICE FOR SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS6442389A
公开(公告)日：1989-02-14
申请号：JP19710587
申请日：1987-08-06
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , MATSUDA MASATO
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14
摘要： PURPOSE:To prevent generation of crack in a terminal of a heater, and to prevent deterioration of life of the heater by providing electrodes to both ends of diameters of the heater in stalled orthogonally to an axis of a magnet coil, and arranging two slits provided to the heater on the axis of the magnet coil. CONSTITUTION:Electrodes 9, 9 are installed to both ends of diameters of a heater 6 crossing orthogonally to an axis 11, 11 of a magnet coil interposing clamps 7, 7 and two 6a, 6b of slits provided to a heater 6 are arranged so as to be positioned on the axis of the magnet coil 11, 11. By this constitution, a force for turning the heater in clockwise direction is equalized to a force for turning the same in counterclockwise direction. Therefore, it is not more necessary to fix the heater with a great force, and deterioration of life of the heater due to generation of cracks in the terminals of the heater is prevented.

26. 发明专利

JPS6442387A CARBON CRUCIBLE FOR SILICON SINGLE CRYSTAL PULLING DEVICE 失效
公开(公告)号：JPS6442387A
公开(公告)日：1989-02-14
申请号：JP19710687
申请日：1987-08-06
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , SUZUKI OSAMU , SAITO MASAYUKI , MATSUO HIDEYASU
IPC分类号： C30B15/10 , C30B29/06
摘要： PURPOSE:To prolong the service life of the titled crucible by fixing a carbon ring in a groove cut in the insides of divided plural carbon segments of the crucible along the circumferential direction. CONSTITUTION:A groove 1a is cut in the insides of the lower parts of divided plural carbon segments 1, 1, 1 of a carbon crucible along the circumferential direction and a carbon ring 2 is fixed in the groove 1a. At the time when SiC is formed by the reaction of Si with the carbon ring 2, the ring 2 is exchanged, so the service life of the crucible can be prolonged without exerting influence on the body of the crucible.

27. 发明专利

JPS63159287A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS63159287A
公开(公告)日：1988-07-02
申请号：JP30632086
申请日：1986-12-24
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , SUZUKI OSAMU
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06 , H01L21/18
摘要： PURPOSE:To obtain Si single crystal having small variability of defect density in lot and lot-to-lot defect density variability, by gradually cooling Si single crystal under a specific condition in such a way that the tail part side of a crucible for Si single crystal is maintained at a given temperature for a longer time than the top position of the crucible is kept. CONSTITUTION:A crucible 5 is packed with a polycrystal Si raw material, seed crystal 8 is immersed in Si melt 9 melted by a heater 6 and Si single crystal 10 is produced by pulling up while rotating. In the operation, at each of positions A-D the surface temperature of the Si single crystal 10 is monitored. Then, the single crystal 10 is gradually cooled by controlling at least one of output of the heater 6, rising speed of the single crystal 10 and flow rate of atmosphere inert gas in such a way that part at the tail part side of the single crystal is kept at >=900 deg.C for >=24hr. Consequently, silicon single crystal having low value of defect density and small variability thereof can be pulled up as shown by the solid line.

28. 发明专利

JPS61281100A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS61281100A
公开(公告)日：1986-12-11
申请号：JP12172785
申请日：1985-06-05
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , NAKANISHI MASAMI , SUZUKI OSAMU , FUKUMURA KAZUO
IPC分类号： C30B29/06 , C30B15/00 , H01L21/18 , H01L21/208
摘要： PURPOSE:To obtain the titled single crystal having large diameter and high quality, in high yield, by charging a silicon raw material into a silicon cylinder having higher height than the crucible, putting the cylinder into the crucible, and melting the silicon raw material to effect the growth of a single crystal. CONSTITUTION:A graphite protector 14 is attached to the top of a supporting shaft 13 placed rotatably in the lower chamber 11 of an apparatus for the pulling up of silicon single crystal. A crucible 15 made of e.g. quartz is put into the graphite protector 14 and is made to be heatable with the carbon heater 19. A pull chamber 12 for the pulling up of silicon single crystal is placed above the quartz crucible. A cylinder 16 made of silicon and having higher height than the crucible is inserted into the crucible 15, and a polycrystalline silicon raw material and impurities 17 are charged into the cylinder 16. The apparatus is evacuated while passing an inert gas therethrough, and the carbon heater 19 is electrified with the electrode 18 and heated to melt the raw materials 17 and the cylinder 16. The seed crystal attached to the pulling up shaft is dipped into the molten raw materials while rotating the crucible 15, and a single crystal is pulled up.

29. 发明专利

JPS6033291A PREPARATION OF SINGLE CRYSTAL SILICON 失效
公开(公告)号：JPS6033291A
公开(公告)日：1985-02-20
申请号：JP13925283
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , AKAI KENJI , YAMATO MITSUHIRO , SUZUKI OSAMU
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06
摘要： PURPOSE:To obtain single crystal silicon having uniform concn. of impurity and oxygen in the growth direction and radial direction by changing continuously the strength of magnetic field impressed to the molten silicon in a quartz crucible in accordance with the pulled amt. of single crystal silicon. CONSTITUTION:A seed crystal suspended freely rotatable from the top of a chamber is dipped in molten silicon in a quartz crucible while impressing a magnetic field to the molten silicon, and the seed crystal is pulled up while changing the strength of the magnetic field continuously in accordance with the pulled amt. of the single crystal silicon. For example, pulling of a single crystal is performed by setting preliminarily a program for changing continuously the strength of magnetic strength from 3,000 gauss at the initial stage of pulling to ca. 1,500 gauss at the end stage of pulling to a computor control in order to make uniform the concn. of oxygen in the growth direction of the single crystal silicon. As the result, the difference between the max. value and the min. value of the oxygen concn. in the growth direction of single crystal silicon becomes 2.0X 10 /cm . Therefore, the uniformity is improved.

30. 发明专利

JPH0459689A DEVICE FOR LIFTING SINGLE CRYSTAL 失效
公开(公告)号：JPH0459689A
公开(公告)日：1992-02-26
申请号：JP16998990
申请日：1990-06-29
申请人： TOSHIBA CERAMICS CO
发明人： ISHIKAWA TAKASHI , SUZUKI OSAMU
IPC分类号： C30B15/14
摘要： PURPOSE:To enlarge a single crystal-lifting rate and improve the characteristics, productivity, etc., of the single crystal by disposing a specific structure double insulating members above a melted material in a crucible to steepen the gradient of temperature in a single crystal-lifting device by Czochralski method. CONSTITUTION:A crucible 15 is disposed in a chamber 11 and a heat generator 14 is disposed separately from the outside of the crucible 15. A double structure heat-insulating member comprising the first heat-insulating plate 19a having a reverse hollow conical shape and the second reverse hollow conical heatinsulating plate 19b formed on the inside of the first heatinsulating plate 19a through a spacer so as to form a space on the first heat-insulating plate 19a is disposed above a melted material 18 in the crucible 15. The melted material 18 in the crucible 15 is lifted with a lifting bar 20 equipped with a seed crystal at the lower end thereof and the produced single crystal bar 21 is lifted through the openings of the heat insulating members 19a and 19b.

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