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21. 发明专利

JP2000208868A SURFACE EMISSION SEMICONDUCTOR LASER AND ITS MANUFACTURE 失效
公开(公告)号：JP2000208868A
公开(公告)日：2000-07-28
申请号：JP952199
申请日：1999-01-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TATENO KOUTA , TADANAGA OSAMU , UENOHARA HIROYUKI , KAGAWA TOSHIAKI , AMANO CHIKARA
IPC分类号： H01L33/06 , H01L33/30 , H01S5/00 , H01S5/12 , H01S5/183 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To stably provide a long wavelength laser at high output for an extended period by forming a material constituting an active layer between first and second distribution feedback type reflection mirrors before completing the active layer. SOLUTION: An n-type distribution feedback type reflection mirror (DBR) 102 is formed on a substrate 101 of n-type GaAs. On a barrier layer 104 formed over it, a metal layer 105 of In is formed. A p-type DBR 107 is formed on a substrate 106 of p-type GaAs. Then the substrates 101 and 106 are faced each other, and a metal layer 105 and a spacer layer 108 contacts each other before heating so that the substrates 101 and 106 are pasted together. As is diffused laterally in the metal layer 105, constituting an active layer 115 comprising a well layer and the barrier layer 104. With this configuration, an active layer is not formed at a pasting stage, so pasting causes no degradation in the active layer. Thus, the laser of long wavelength is stably provided at high output over a long period.

22. 发明专利

JPH11312847A VERTICAL RESONATOR TYPE SEMICONDUCTOR LASER AND MANUFACTURE OF THE SAME ELEMENT 失效
公开(公告)号：JPH11312847A
公开(公告)日：1999-11-09
申请号：JP2785499
申请日：1999-02-04
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： UENOHARA HIROYUKI , TATENO KOUTA , KAGAWA TOSHIAKI , TADANAGA OSAMU , AMANO CHIKARA , KUROKAWA TAKASHI
IPC分类号： H01S5/00 , H01S5/183 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To simplify a transverse mode, and to obtain dynamically stable operation, by making the effective refractive indices of each layer constituting a resonator region higher than those of other each layer and that of a layer configuring a semiconductor buried layer. SOLUTION: First growth is stated from p-DBR on a P-GaAs substrate, and growth is conducted up to an MQW active layer and n-DBR. The Al composition of a low refractive-index layer having several periods close to the active layers of n-DBR and p-DBR is set at a value lower than those of other DBR sections, a current constriction layer is grown, and the current constriction layer is made lower than an optical resonator section in index distribution. A mask at the time of mesa formation is used as the selection mask of crystal growth as it is, and second growth (the current constriction layer) is formed. The mask on a mesa upper section is removed at a final stage, third growth is performed, and n-DBR is grown in a period section only by the obtaining of reflectivity satisfying laser oscillation conditions.

23. 发明专利

JPH1168208A WAVELENGTH CONVERTING DEVICE 失效
公开(公告)号：JPH1168208A
公开(公告)日：1999-03-09
申请号：JP21648397
申请日：1997-08-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TADOKORO TAKASHI , AMANO CHIKARA , ITO YOSHIO
IPC分类号： H01S5/06 , H01S5/50 , H01S3/103
摘要： PROBLEM TO BE SOLVED: To provide a wavelength converting device that is capable of converting wavelength of a laser light signal modulated at a rate higher than several Gb/s, by preparing a laser resonator in which plural active medium regions are distributed, and a waveguide from which a light is injected into one of the active medium regions along the direction perpendicular to the direction of the resonance in the active medium region. SOLUTION: A laser resonator 8 that constitutes a laser and a waveguide 9 are prepared to form a nearly T-shape on a substrate 11. The resonator 8 consists of two gain regions 6 and 7, wherein the resonator 6, which serves as an active medium region, is constituted by a compressive-strained multiple quantum-well active region sandwiched by two optical confinement layers 12 and 14, and the gain region 7, which serves as a second active medium region, is constituted by a tensile-strained multiple quantum-well active region sandwiched by the two optical confinement layers 12 and 14. On the other hand, the waveguide 9 is prepared so that a signal light from an external source can propagate in an active layer 13 and is injected into the active layer 13 in the region 6 of the laser resonator 8.

24. 发明专利

JPH05186294A METHOD FOR GROWING COMPOUND SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH05186294A
公开(公告)日：1993-07-27
申请号：JP13077992
申请日：1992-05-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KONDO NAOTO , AMANO CHIKARA , NANISHI YASUYUKI
IPC分类号： C30B23/08 , C30B25/18 , H01L21/203
摘要： PURPOSE:To clean the surface of a base of an aluminum-containing compound semiconductor crystal at low temperature without damaging smoothness of the surface of the base and accumulating impurities at the interface between the base and a growth layer and to grow crystal of compound semiconductor capable of growing a high-quality crystal layer from the surface. CONSTITUTION:Crystal of compound semiconductor is obtained by exciting at least part of a substance in a vapor-phase state by microwave electron cyclotron resonance, transporting the excited substance to a base of compound semiconductor crystal containing aluminum as a constituent element by a divergent magnetic field, cleaning the surface of the crystal base with the transported excited substance and successively growing crystal.

25. 发明专利

JPH05145170A PLANE EMISSION LASER 失效
公开(公告)号：JPH05145170A
公开(公告)日：1993-06-11
申请号：JP30193291
申请日：1991-11-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KOHAMA TAKETAKA , AMANO CHIKARA
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To improve the yield by making the semiconductor light reflecting layerts in a specific composition. CONSTITUTION:A first semiconductor light reflecting layer 3, an AlGaAs clad layer 4, an AlGaAs/GaAs superlattice layer (active layer), an AlGaAs cavity layer 6, and a second semiconductor light reflecting layer 7 are laminated in that order on the main surface of a GaAs or AlGaAs substrate 1. Thus, an optical resonator is formed by the first and second light reflection layers 3 and 7 to enable the light emitted from the active layer 5 to be oscillated for lasing. In this case, the first and second semiconductor light reflecting layers 3 and 7 in a relationship of (AlxGa1-x)0.48In0.52P/AlyGa1-yAs (0

26. 发明专利

JPH0588217A PANEL TYPE OPTICAL SWITCH ARRAY 失效
公开(公告)号：JPH0588217A
公开(公告)日：1993-04-09
申请号：JP27184791
申请日：1991-09-25
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AMANO CHIKARA , KUROKAWA TAKASHI , MATSUO SHINJI , NAKAHARA TATSUSHI
IPC分类号： G02F1/35
摘要： PURPOSE:To obtain a low absorption loss, high speed, high extinction ratio, and high gain. CONSTITUTION:A phototransistor 3, a DBR mirror 2 and an SL-pin modulator 1 are successively laminated on a semiconductor substrate 4. This phototransistor 3 has a layer structure consisting of an n-collector, p-base and n-emitter in this order from a semiconductor substrate 4 side. The SL-pin modulator 1 has a layer structure consisting of an n-clad layer, i-SL layer and p-clad layer in this order from the semiconductor substrate 4 side. Respective pixels P are separated by insulating layers 5. Antireflection films 6 and electrodes 71, 72 are respectively formed by vapor deposition on the surfaces of the SL-pin modulator 1 and the semiconductor substrate 4. A constant voltage source 8 is connected between the electrode 71 and the electrode 72.

27. 发明专利

JPH03241822A MANUFACTURE OF COMPOUND SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH03241822A
公开(公告)日：1991-10-29
申请号：JP3925790
申请日：1990-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TACHIKAWA MASAMI , ITO YOSHIO , AMANO CHIKARA , MORI HIDEFUMI
IPC分类号： H01L29/26 , H01L21/20
摘要： PURPOSE:To manufacture the title compound semiconductor substrate capable of feeding longitudinal current from a single crystal semiconductor substrate side to a crystal semiconductor side or vice versa possessing less crystal defects of the semiconductor layer in different composition by a method wherein impurity concentration non-modulated buffer layers are formed by heat-treating impurity concentration modulated buffer layers and so forth. CONSTITUTION:The first crystal semiconductor thin film 3a' and the second crystal semiconductor thin film 3b respectively specific are alternately and successively formed laminarly on a single crystal semiconductor substrate 1 by epitaxial deposition process so as to form impurity concentration modulated buffer layers 3' where the first and second impurity concentrations are successively and alternately changed in the depth direction. Next, a crystal semiconductor 4 in different composition from that of the substrate 1 is formed on the impurity concentration modulated buffer layers 3' also by the epitaxial deposition process. Later, an impurity concentration non-modulated buffer layers 3'' in impurity concentration substantially unchanged in the depth direction as well as in specific conductivity type through the whole thickness are formed by heat-treating said layers 3'.

28. 发明专利

JPH03216628A OPTICAL THREE-TERMINAL ELEMENT 失效
公开(公告)号：JPH03216628A
公开(公告)日：1991-09-24
申请号：JP1176390
申请日：1990-01-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AMANO CHIKARA , MATSUO SHINJI , FUKANO HIDEKI
IPC分类号： G02F3/00 , H01L31/10
摘要： PURPOSE:To provide the optical three-terminal element which is small in element shape, is suitable for arraying, and has a quich motion by successively laminating an optical modulating part which has a pin structure and changes the transmittance of 1st light with an impressed voltage and a phototransistor which has an npn structure and changes output current with the intensity of 2nd light. CONSTITUTION:The optical modulating part 3 which has the pin structure and changes the transmittance of the 1st light with the impressed voltage and the phototransistor 2 which has the npn structure and changes the output current with the intensity of the 2nd light on a semiconductor substrate 4. Since the monolithically constituted element is formed in this way, the shape of the element is extremely small and the high-speed optical gate processing is executed with the simple constitution.

29. 发明专利

JPH0277036A OPTICAL BISTABLE ELEMENT 失效
公开(公告)号：JPH0277036A
公开(公告)日：1990-03-16
申请号：JP20015588
申请日：1988-08-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AMANO CHIKARA , HASUMI YUJI , TAKANASHI YOSHIFUMI
IPC分类号： G02F3/02 , H01L31/14
摘要： PURPOSE:To obtain an optical bistable element having a large ON/OFF ratio and to enable operation at room temp. by connecting a pin diode having variable light transmittance in series with a negative resistance element group consisting of plural negative resistance element connected in series. CONSTITUTION:A pin diode 4 constituted of a (p) layer 4a, an (n) layer 4b, and an (i) layer 4c inserted between the (p) layer 4a and the (n) layer 4b, generating photoelectric current, is connected with a negative resistance element group(multitunnel diode)5 constructed by connecting N negative resistance elements, such as tunnel diodes TD1-TDN in series arranging their polarity in a same direction, and a constant-voltage power source 6 in series. The multitunnel diode 5 of the above-described constitution generates N-times as large as voltage change in a peak current value and a valley current value as compared to a single tunnel diode. Thus, an optical bistable element having a large ON/OFF ratio is obtd.

30. 发明专利

JPS62291183A MANUFACTURE OF MULTIJUNCTION SEMICONDUCTOR PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPS62291183A
公开(公告)日：1987-12-17
申请号：JP13552186
申请日：1986-06-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KATSUMOTO SHINGO , AMANO CHIKARA , SHIBUKAWA ATSUSHI , YAMAMOTO AKIISA
IPC分类号： H01L31/04
摘要： PURPOSE:To obtain a multijunction semiconductor photoelectric conversion element of high efficiency by a method wherein a connecting portion of an upper cell with a lower cell is formed on the upper cell formed on a dummy substrate, the lower cell is formed on the connecting portion subsequently, and the dummy substrate is removed thereafter. CONSTITUTION:With a dummy substrate 8 used, an upper cell 16 having a high growth temperature is made to grow first, and then a lower cell 23 having a low growth temperature is made to grow. Therefore, neither of the grown cells will be heated at higher temperatures than those during growth. As to a multijunction semiconductor photoelectric conversion element having an upper cell of a smaller lattice constant than a lower cell, as well, lattice mismatch can be surmounted easily, since cells are made to grow in the sequence of the ones of smaller lattice constants ahead. This method enables the formation of an upper cell of high quantity and, consequently, the formation of a multijunction semiconductor photoelectric conversion element of high efficiency.

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