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21. 发明专利

JPS6039366A MULTIOUTPUT DC VOLTAGE CONVERTING CIRCUIT 失效
公开(公告)号：JPS6039366A
公开(公告)日：1985-03-01
申请号：JP14646083
申请日：1983-08-12
申请人： HITACHI LTD
发明人： KUROKI YOSHINORI , ONDA KENICHI , OKUHARA SHINJI
IPC分类号： H02M3/28
摘要： PURPOSE:To reduce power loss when the current of a main switch is interrupted by releasing at least one circuit in an output side winding before a main switch provided at the input side of a transformer is turned OFF. CONSTITUTION:An auxiliary switch Q2 provided at the output side of a transformer T is controlled to switch at a timing relation that is conducted after a main switch Q1 provided at the input side of the transformer T becomes conductive and interrupted before the switch Q1 is interrupted. Thus, the switching loss of the switch Q1 can be reduced. A surge voltage caused by a leakage inductance of the transformer T at the moment that the switch Q2 is interrupted operates to charge a capacitive element Cr, and the surge voltage is absorbed so as not to apply excess voltage to the switch Q2.

22. 发明专利

JPS604591B2 失效
公开(公告)号：JPS604591B2
公开(公告)日：1985-02-05
申请号：JP12276173
申请日：1973-11-02
申请人： HITACHI LTD
发明人： OKUHARA SHINJI , OOHIGATA ICHIRO
IPC分类号： H01L21/762 , H01L21/76

23. 发明专利

JPS58718B2 失效
公开(公告)号：JPS58718B2
公开(公告)日：1983-01-07
申请号：JP4353377
申请日：1977-04-18
申请人： HITACHI LTD
发明人： OKUHARA SHINJI
IPC分类号： H03K17/00 , H03K17/78 , H04Q3/52

24. 发明专利

JPS57171837A MOS SWITCHING CIRCUIT 失效
公开(公告)号：JPS57171837A
公开(公告)日：1982-10-22
申请号：JP18228581
申请日：1981-11-16
申请人： HITACHI LTD
发明人： OKUHARA SHINJI
IPC分类号： H03K17/687
摘要： PURPOSE:to prevent dielectric breakdown between the gate and the source, and to obtain a switching circuit which is free from offset voltage, by connecting a resistance between the gate and the source, and connecting a current source to the gate. CONSTITUTION:When it is started to make a current flow from a controlling circuit 11, voltage drops between the gate and the source of MOS TR1 by a current flowing through a resistance 10 and a load 3, and the MOS TR conducts. Since the controlling circuit 11 is used as a constant-current circuit, the voltage drop becomes constant, and even if the source potential is varied in accordance with terminal voltage of the load 3, the variation of voltage is borne by the controlling circuit, dielectric breakdown of a gate electrode G does not occur.

25. 发明专利

JPS55107333A SWITCH CIRCUIT OF BRIDGE TYPE 失效
公开(公告)号：JPS55107333A
公开(公告)日：1980-08-18
申请号：JP1334779
申请日：1979-02-09
申请人： HITACHI LTD
发明人： KITANO JIYUNJIROU , OKUHARA SHINJI
IPC分类号： H04M11/00 , H03K17/72 , H03K17/725
摘要： PURPOSE:To prevent the leakage of drive current to other power supply circuit, by constituting the bridge with two sets of P and N type PNPN switches and driving the two with the constant current circuit of current supply type and the other with that of current absorption type. CONSTITUTION:The bridge type switch circuit is constituted with P gate PNPN switches 6, 7 and N gate PNPN switches 4, 5. The current supply type constant current circuits 10, 11 drive the switches 6, 7 and the current absorption type constant current circuits 8, 9 drive the switches 4, 5. When the circuits 8-11 stop the current supply and absorption, the switches 4-7 are OFF, the load circuit 3 is separated from the office lines 1, 1', and when the circuits 8-11 are operative, the switches 4-7 are ON and the circuit 3 is connected to the office lines 1, 1'. By keeping equal the current set value IGP of the circuits 8, 9 with that IGN of the circuit 10, 11, the leakage of drive current to the office lines 1, 1' can be prevented.

26. 发明专利

JPS5548962A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS5548962A
公开(公告)日：1980-04-08
申请号：JP12151878
申请日：1978-10-04
申请人： HITACHI LTD
发明人： OKUHARA SHINJI
IPC分类号： H01L27/06 , H01L21/822 , H01L27/08 , H01L29/74 , H01L29/747 , H03K17/72 , H03K17/725
摘要： PURPOSE:To increase stability against the tray effect, by providing in a common substrate a pair of pnpn switches, each consisting of an anode and cathode equivalently connected in anti-parallel, and providing a difference in the efficiency between the transistors constituting the switches. CONSTITUTION:By diffusion, four p-type regions 24, 24', 25 and 25' are formed in common n-type region 23, which is supported by substrate 21 and separated from other circuit elements by dielectric film 22. Next, n -type regions 26 and 26' are formed in regions 25 and 25'. In this way, region 23 is made common, regions 24 and 24' are made into an anode, regions 25 and 25' are made into a gate, and regions 26 and 26' are made into a cathode, and thereby a pair of pnpn switches are obtained. By connecting regions 24 and 26', and 24' and 26, a pair of anti- parallel-connected pnpn switches are formed, and a difference in current amplification factors between a pair of horizontal transistors constituting the switches is provided.

27. 发明专利

JPS5496350A TWOOWAY SWITCHING CIRCUIT 失效
公开(公告)号：JPS5496350A
公开(公告)日：1979-07-30
申请号：JP280778
申请日：1978-01-17
申请人： HITACHI LTD
发明人： KITANO JIYUNJIROU , OKUHARA SHINJI
IPC分类号： H01L27/06 , H01L21/822 , H01L29/74 , H01L29/747 , H02M1/08
摘要： PURPOSE:To improve the degree of integration as well as to realize the cost reduction by providing the means which short-circuiting transiently between the P-gate and the cathode of one SCR when the transient voltage is applied to two units of SCR connected in parallel reversely. CONSTITUTION:The 4-terminal SCR1 and 11 which share the n-base are connected in parallel to each other reversely via diode 4 and 14. When the potential of terminal C1 has a sudden rise to terminal C1, the current charging the capacity of the 2nd junction (between n-base Gn and P-gate GP1) of SCR1 tends to flow to cathode K1 from GP1 to cause the misignition of SCR1. At the same time, the current charging the capacity of the 1st junction (between GN and anode A2) of SCR11 drives the base of npn-transistor Tr2 via diode 3 to secure the low resistance between the collecter and emittor of Tr2. As a result, SCR1 has no ignition. Thus, Tr2 features the function to give the transient short circuit between GP1 and K1 at the application time of the transienttn voltage.

28. 发明专利

JPS5483788A PHOTOCOUPLING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5483788A
公开(公告)日：1979-07-04
申请号：JP15147277
申请日：1977-12-16
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OKUHARA SHINJI
IPC分类号： H01L31/12
摘要： PURPOSE:To mount effectively a plural number of photo couplers by simplifying the constitution, by making it easy to fabricate, and by improving photocoupling efficiency. CONSTITUTION:Electrodes 4 and 5 of luminous element 1 and photo detector 2 are connected to wiring conductors 7 formed on the same wiring surface 6 of ceramic substrate 3. The PN junction surface (luminous surface) 8 of luminous element 1 is arranged upright on photo detection surface 9 in airtight contact with photo detection surface 9 of the photo detector. Then, both elements are fixed by low- melting point metal in one process. In this constitution, since the luminous surface is made in airtight contact with the photo detector, photocoupling efficiency is high and since the wirng pattern can be formed with high precision, the relative position precision between both elements is also high and an increase photo driving current and dispersion are prevented. Further, several photocouplers can be mounted on the same substrate easily.

29. 发明专利

JPS5467393A HIGH DIELECTRIC STRENGTH SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5467393A
公开(公告)日：1979-05-30
申请号：JP13342377
申请日：1977-11-09
申请人： HITACHI LTD
发明人： OKUHARA SHINJI
IPC分类号： H01L31/12 , H01L29/74 , H01L31/10
摘要： PURPOSE:To obtain a device of high dielectric strength by increasing the sensitivity to photo control while preventing the increase in unnecessary electrostatic coupling. CONSTITUTION:Electrodes 17, 18 extend to the outside of p layers 14, 15 on an insulation film 12. Windows 19 are opened in the electrode 18 right above the junction exposed parts by p layer 15 and n layer 13. This structure enables the electrodes 17, 18 to play the role of field as well and concentration of electric fields at the pn junctions by the layers 14, 15 and layer 13 to be obviated. The windows 19 decrease the leakage at the high frequency owing to the undesired capacity increased by he electrode 18 of a large area, substantially reduce the electrode area and make possible firing of SCR through light radiation.

30. 发明专利

JPS53148970A POSITIONING DEVICE FOR MINUTE PARTS 失效
公开(公告)号：JPS53148970A
公开(公告)日：1978-12-26
申请号：JP6321977
申请日：1977-06-01
申请人： HITACHI LTD
发明人： KITANO JIYUNJIROU , OKUHARA SHINJI
IPC分类号： H01L21/68 , H01L21/48 , H01L21/58
摘要： PURPOSE:To secure an easy holding of the minute parts regardless of the projection at the side surface of the chip and thus to ensure an assured positioning for these parts, by providing the notches at the lower part of the V-shaped catch part.

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