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21. 发明专利

JPH08102448A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH08102448A
公开(公告)日：1996-04-16
申请号：JP23789694
申请日：1994-09-30
申请人： NIPPON STEEL CORP
发明人： HAMAGUCHI ISAO , NAKAJIMA TATSUO , YANO TAKAYUKI , TACHIMORI OJI , TSUMORI YASUO
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12
摘要： PURPOSE: To provide a method of manufacturing a high-quality SOI substrate of a structure, wherein the insulation properties of the SOI substrate are good and the interface between a silicon film and the SOI substrate has a flat buried oxide film, by a method wherein oxygen ions are implanted in a silicon substrate and a heat treatment is performed on the silicon substrate. CONSTITUTION: In a heat treatment process for the formation of a buried oxide is conducted after oxygen ions are implanted in a silicon substrate, a heat treatment of a partial pressure of oxygen of at least 5×10 Pa or higher in an atmosphere and 100 deg.C or higher, desirably 1330 deg.C or higher to 1410 deg.C or lower, is performed on the substrate, whereby a SOI substrate of high quality can be manufactured.

22. 发明专利

JPH05286799A 失效
公开(公告)号：JPH05286799A
公开(公告)日：1993-11-02
申请号：JP9070792
申请日：1992-04-10
申请人： NIPPON STEEL CORP
发明人： HAMAGUCHI ISAO , FUJITA TETSUO , YANO TAKAYUKI
IPC分类号： C30B29/06 , C30B31/22 , C30B33/02 , H01L21/02 , H01L21/265 , H01L27/12
摘要： PURPOSE:To obtain a silicon substrate having an embedded oxide film with decreased defects in a sharp period of time by executing ion implantation while stepwise changing the energy of the oxygen ions to be implanted, then executing a heat treatment in succession. CONSTITUTION:The implantation of the prescribed dosing quantity of the oxygen ions to a silicon substrate is executed while the implantation energy is changed stepwise and in succession, the heat treatment is executed to recover from the damage by the ion implantation and to form the embedded oxide film in the substrate. The second and subsequent implantation is executed at the energy value lower than the value of the first implantation energy. The oxygen implanted in the second and subsequent times exists much in a region where the damage density generated by the first implantation is high and can, therefore, be moved easily during the heat treatment. The defect density of the substrate after the heat treatment is thus decreased. Since the long-term heat treatment after the ion implantation is necessitated just once, the substrate is produced in a short period of time.

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