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21. 发明专利

JP2002025638A BATTERY 失效
公开(公告)号：JP2002025638A
公开(公告)日：2002-01-25
申请号：JP2000210186
申请日：2000-07-11
申请人： NEC CORP
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： C01B21/064 , B82Y30/00 , C01B31/02 , H01G9/00 , H01M14/00
摘要： PROBLEM TO BE SOLVED: To provide a battery material free from deterioration, decreasing the mass of the battery material relative to charge capacity, and increasing the amount of electric power supplied. SOLUTION: A smaller-diameter monolayer carbon nano-tube is accommodated in a larger-diameter monolayer carbon nano-tube so that they are insulated from each other. A boron nitride nano-tube is used as an insulation layer. The carbon nano-tubes and the boron nitride nano-tube have a common tube axis.

22. 发明专利

JP2001322100A METHOD OF FORMING NANO-SCALE PATTERN 失效
公开(公告)号：JP2001322100A
公开(公告)日：2001-11-20
申请号：JP2000140407
申请日：2000-05-12
申请人： NEC CORP
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： B82B3/00 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To form a fine pattern on the surface of a substrate in a short time. SOLUTION: A fine pattern comprising metallic atoms is formed on the surface of a substrate comprising Si atoms. Br atoms are chemically bonded to the substrate surface of Si atoms to form an atomic layer. In this chemical bond, both bonding orbitals 8, 10 and an anti-bonding orbital 12 are occupied by electrons, and the bonding orbital 8 is localized on Br atoms 6. Electrons 14 of the bonding orbital 8 localized on the Br atoms 6 is locally excited at the surface part of the substrate and emitted to a conduction band to destroy the chemical bond of the Si atoms 2 and Br atoms 6, thereby desorbing the Br atoms 6 from the surface of the substrate. The substrate is then exposed to the metallic atoms to chemically bond the metallic atoms to the surface of the substrate with the Si atoms 2 exposed by the desorption of the Br atoms 6, thus forming the fine pattern.

23. 发明专利

JPH02187943A MEMORY ELEMENT AND MEMORY DEVICE AS WELL AS PRODUCTION AND READING-OUT METHOD THEREOF 失效
公开(公告)号：JPH02187943A
公开(公告)日：1990-07-24
申请号：JP633389
申请日：1989-01-13
申请人： NEC CORP
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： G11C11/21 , G11B9/00 , G11B9/14
摘要： PURPOSE:To produce the memory element by rearranging the atoms on the surface of the crystal by using an electrode having a sharp tip, thereby applying an electric field in the narrow range of clean surface of a crystal. CONSTITUTION:Defects 31 of a very small size are formed on a solid surface by projecting extremely finely converged laser light or ion beam. Namely, the defects are previously formed on the clean surface of the crystal at arbitrary intervals by the laser or ion beam converted to several Angstrom diameter. The electrode 21 having the sharp tip is brought near to the clean surface of the crystal to impress the electric field in the narrow range of the crystal surface. The rearrangement of the atoms 11 on the surface and the atoms 12 in the crystal are executed adjacently to the defects formed on the crystal surface, by which the memory element is produced.

24. 发明专利

JP2012089604A Thermoelectric conversion device, method of manufacturing the same, and thermoelectric conversion unit 审中-公开
标题翻译：热电转换装置，其制造方法和热电转换装置
公开(公告)号：JP2012089604A
公开(公告)日：2012-05-10
申请号：JP2010233562
申请日：2010-10-18
申请人： Nec Corp , 日本電気株式会社
发明人： HIROSE KENJI , MIYAMOTO YOSHIYUKI
IPC分类号： H01L35/32 , H01L35/34 , H02N11/00
CPC分类号： Y02E20/14 , Y02P70/605
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion device having high thermoelectric conversion efficiency.SOLUTION: A thermoelectric conversion device 1 comprises: a p-type semiconductor 3; an n-type semiconductor 4; a conductor 2 for electrically connecting a first end of the p-type semiconductor 3 and a first end of the n-type semiconductor 4; a first electrode 5 electrically connected to a second end of the p-type semiconductor 3; a second electrode 6 electrically connected to a second end of the n-type semiconductor 4; and an insulator 7 disposed outside the first electrode 5 and the second electrode 6 at the second end sides of the p-type semiconductor 3 and the n-type semiconductor 4. The p-type semiconductor and the n-type semiconductor each have a semiconductor material and a dopant attached to a surface of the semiconductor material.
摘要翻译：要解决的问题：提供一种具有高热电转换效率的热电转换装置。解决方案：热电转换装置1包括：p型半导体3; n型半导体4; 用于电连接p型半导体3的第一端和n型半导体4的第一端的导体2; 电连接到p型半导体3的第二端的第一电极5; 电连接到n型半导体4的第二端的第二电极6; 以及设置在p型半导体3和n型半导体4的第二端侧的第一电极5和第二电极6的外侧的绝缘体7.P型半导体和n型半导体均具有半导体材料和附着到半导体材料表面的掺杂剂。版权所有（C）2012，JPO＆INPIT

25. 发明专利

JP2009194274A Magnetic material and production method therefor 审中-公开
标题翻译：磁性材料及其制造方法
公开(公告)号：JP2009194274A
公开(公告)日：2009-08-27
申请号：JP2008035538
申请日：2008-02-18
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI , LEE HOSIK
IPC分类号： H01F1/00 , C01B31/02 , C01B31/04 , H01F1/10
摘要： PROBLEM TO BE SOLVED: To solve the problem, wherein a magnetic material that uses a transition metal, whose magnetism is developed by a d-orbit electron and imparts a large load to the environment, when it is discard. SOLUTION: Excess carbon atom 2 is supplied among each single-layer graphite 3a in an ion implantation method, and the like; and when the distance between each single-layer graphite is compressed at heating, the supplied surplus carbon atom 2 is subjected to chemical bonding with a carbon atom 1, which constitutes the single layer graphite 3a on upper and lower sides. The number of chemical bonds of the inserted carbon atom 2 becomes 2, and two electrons which do not contribute to bonding are subjected to spin polarization, and magnetism is manifested. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决这样的问题，其中使用过渡金属的磁性材料，当其被丢弃时，其磁性由d轨道电子显影并赋予环境大的负载。解决方案：以离子注入法在每个单层石墨3a中供应过量的碳原子2等; 并且当加热时每个单层石墨之间的距离被压缩时，所供应的多余碳原子2与构成上层和下侧单层石墨3a的碳原子1进行化学键合。插入的碳原子2的化学键的数目变为2，并且不会导致键合的两个电子受到自旋极化，并且表现出磁性。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2009048460A Wave function column derivation method, device and program based on first principle of substance in electric charge status 审中-公开
标题翻译：基于电荷状态物质的第一原理的波函数列衍生方法，器件和程序
公开(公告)号：JP2009048460A
公开(公告)日：2009-03-05
申请号：JP2007214803
申请日：2007-08-21
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide the wave function column derivation method, device and program of a charged substance for deriving a wave function column based on a first principal when substances approach each other, and which section of a space should be assigned to which substance is ambiguous.
SOLUTION: This wave function column derivation method includes: a process (S10) for, as for charged substances A and B arranged so as to be isolated with a prescribed gap in a space, separately deriving a wave function column ψ
A and electric charge density distribution function ρ
A of electrons assigned to the substance A and wave function column ψ
B and electric charge density distribution function ρ
B of electrons assigned to the substrate B based on a first principle; a process (S11) for deriving an electric charge density distribution function ρ
C by calculating the sum of the electric charge density distribution functions ρ
A and ρ
B , and a process (S12) for deriving an extended wave function column ψ
C .
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供波形函数列导出方法，带电物质的装置和程序，用于当物质彼此接近时基于第一原理导出波函数列，并且应该分配空间的哪个部分物质是不明确的。解决方案：该波函数列导出方法包括：对于在空间中以规定的间隔隔离布置的带电物质A和B的方法（S10），分别导出波函数列ψ A 基于第一原理分配给基板B的电子的B 通过计算电荷密度分布函数ρ＆lt; SB＆gt; A＆lt; / SB＆gt;和＆lt; SB＆gt; B＆lt; /＆gt;的和来导出电荷密度分布函数ρ SB>，以及用于导出扩展波函数列ψ C 的处理（S12）。版权所有（C）2009，JPO＆INPIT

27. 发明专利

JP2006228864A T type structure nanotube, field effect transistor, and manufacturing method thereof 有权
标题翻译： T型结构纳米管，场效应晶体管及其制造方法
公开(公告)号：JP2006228864A
公开(公告)日：2006-08-31
申请号：JP2005038910
申请日：2005-02-16
申请人： Nec Corp , 日本電気株式会社
发明人： KAWAI TAKASUMI , MIYAMOTO YOSHIYUKI
IPC分类号： H01L29/80 , B82B1/00 , B82B3/00 , C01B31/02 , H01L29/06 , H01L29/786
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0504 , H01L51/0508 , H01L51/0595
摘要： PROBLEM TO BE SOLVED: To realize a transistor of which both channel and gate are nanotubes by jointing the nanotubes together by SP 3 binding. SOLUTION: A substrate is prepared on which a pair of source-drain electrodes 27 and a gate terminal 28 are formed äfigure (a)}, and a catalyst layer 20 is formed at one of the source-drain electrodes 27 äfigure (b)}. CNT is grown with the catalyst layer 20 as nucleus äfigure (c)}, so that a first CNT23 is formed between the pair of source-drain electrodes 27 äfigure (d)}. A second CNT24 is collected by a holding means 25, and a cap is removed as required using electron beam or the like and then the opening is cleaned. After that, the opening is made to contact the side surface of first CNT23 for binding two CNTs äfigure (e)}. The other end of second CNT24 is positioned on the gate terminal 28 äfigure (f)}. By selectively radiating metal ion, the end of CNT is fixed to the electrode and terminal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过SP 3 结合将纳米管连接在一起，实现通道和栅极都是纳米管的晶体管。解决方案：制备其上形成有一对源极 - 漏极电极27和栅极端子28的衬底（a）}，并且在源极 - 漏极电极27之一处形成催化剂层20（图 b）}。 CNT以催化剂层20生长为核（c）}，使得在一对源 - 漏电极27（d）}之间形成第一CNT23。第二CNT24由保持装置25收集，并且根据需要使用电子束等除去盖子，然后清洁开口。之后，使开口接触第一CNT23的侧表面，以结合两个CNT（图）（e）}。第二CNT24的另一端位于栅极端子28（f）}上。通过选择性地辐射金属离子，CNT的末端固定在电极和端子上。版权所有（C）2006，JPO＆NCIPI

28. 发明专利

JPH11273551A Electron emitting element employing boron nitride and its manufacture 失效
标题翻译：电子发射元件采用硼砂及其制造
公开(公告)号：JPH11273551A
公开(公告)日：1999-10-08
申请号：JP7405898
申请日：1998-03-23
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： H01J9/02 , H01J1/304 , H01J1/30
CPC分类号： B82Y10/00 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide an electron emitting element which emits electrons by field emission, is capable of emitting electrons at high efficiency even in a low electric field and possible to be manufactured by a simple manufacturing method.
SOLUTION: This electron emitting element employs boron nitride nano tubes (boron nitride with a nano tube structure) as an electron source. In this case, field emission occurs from the boron nitride nano tubes having the optimum tip shapes formed in the electric field application element or an electric field application part. The boron nitride nano tubes with the optimum tip shapes are boron nitride nano tubes having sharpened tips. The boron nitride nano tubes having sharpened tips comprise boron (1 or 2)-boron bonds or nitrogen (2 or 1)-nitrogen bonds in the tips.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：为了提供通过场致发射电子的电子发射元件，即使在低电场下也能够以高效率发射电子，并且可以通过简单的制造方法制造。解决方案：该电子发射元件采用氮化硼纳米管（纳米管结构的氮化硼）作为电子源。在这种情况下，从在电场施加元件或电场施加部形成的最佳尖端形状的氮化硼纳米管发生场发射。具有最佳尖端形状的氮化硼纳米管是具有尖锐尖端的氮化硼纳米管。具有尖锐尖端的氮化硼纳米管包括尖端中的硼（1或2） - 硼键或氮（2或1） - 氮键。

29. 发明专利

JPH0643198A METHOD FOR SIMULATING ELECTROMIGRATION 失效
公开(公告)号：JPH0643198A
公开(公告)日：1994-02-18
申请号：JP19572992
申请日：1992-07-23
申请人： NEC CORP
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： G01R29/00 , G01R31/00
摘要： PURPOSE:To reduce the size of a device and to enhance the reliability thereof by actually measuring electric field distribution by an atomic scale and theoretically performing simulation on the basis of the electric field distribution. CONSTITUTION:A molecular beam generator 1 is used and molecular beam 5 throttled to about 100Angstrom in its diameter and arranged in its molecular direction by a strong electric field is applied to the solid surface of a sample 4. At this time, the molecular beam 5 is allowed to be incident on the solid surface of the sample 4 so as to be shifted by a small angle with respect to verticality to reflect molecular beam 6. Next, polarized beam having vibration frequency same to the inherent vibration frequency of a molecule is applied to the reflected molecular beam 6 from a light source 2 and it is measured which polarizing direction the inherent vibration excitation of a molecule is generated in by a light detector 3 to measure the direction of the molecule. By this constitution, a map of electric field intensities at all places on the surface of the sample can be drawn in the order of spacial resolving power 100Angstrom . Then, the electric field distribution on the solid surface of the sample 4 is set to an experiential parameter to perform simulation using a large-sized calculator.

30. 发明专利

JP2010278146A Photovoltaic element 审中-公开
标题翻译：光伏元件
公开(公告)号：JP2010278146A
公开(公告)日：2010-12-09
申请号：JP2009127998
申请日：2009-05-27
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic element having a high efficiency of photoelectric conversion, and for which a semiconductor material with no impurity can be used, and which has superior reliability and durability. SOLUTION: A semiconductor layer 4 includes a compound semiconductor including heterogeneous atoms. An inner electrical field is generated by difference of electronegativity between atoms to facilitate migration of photoexcited electrons. COPYRIGHT: (C)2011,JPO&INPIT

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