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21. 发明专利

JPH09321054A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09321054A
公开(公告)日：1997-12-12
申请号：JP13865496
申请日：1996-05-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To avoid damaging a Si substrate adjacent to connection holes bottoms, lower wiring layer, etc., in etching to form an upper wiring layer so that its edges locate above the connection holes by forming them in the condition that the depth of theses holes meets a specified condition equation. SOLUTION: After forming semiconductor elements on a Si substrate 1, an interlayer insulation film 2 is formed, connection holes 3 for electric connection with an upper wiring layer are formed through the insulation film 2, and barrier metals Ti 4 and TiN 5 are formed so that D>C(1+α); C is thickness of this wiring layer, D is depth of the connection hole, α is over-etching rate for this wiring layer. If the upper wiring layer edges locate above the connection holes 3 at etching of the upper wiring layer, etching in the holes 3 never goes down to their bottoms but will end at half the depth thereof.

22. 发明专利

JPH0529476A WIRING CONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0529476A
公开(公告)日：1993-02-05
申请号：JP29129691
申请日：1991-11-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI , TAKADA YOSHIFUMI , OSAKI AKIHIKO , MAEKAWA KAZUYOSHI
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
摘要： PURPOSE:To form a through hole of a desired dimension and to reliably make a contact in the through hole by a method wherein aluminium wiring films are electrically connected to each other through the through hole formed in a silicon oxide film. CONSTITUTION:An aluminium wiring film 49 is formed into a laminated structure consisting of an aluminium alloy film 33, a tungsten film 58 and a titanium nitride film 35. A silicon oxide film 51 and a copper-containing aluminium wiring film 61 are formed on the film 49. The film 49 and the film 61 are electrically connected to each other through a through hole 55. As the reflectivity of light of the film 35 is small, the area to be exposed of a resist can be formed into a prescribed area even if a photolithography technique is applied on a step part 30. As a result, even if the hole 55 is formed on the step part 30, it becomes possible to form the hole 55 of desired dimensions.

23. 发明专利

JPH04249358A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04249358A
公开(公告)日：1992-09-04
申请号：JP3808991
申请日：1991-02-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI , HAYASHIDE YOSHIO
IPC分类号： H01L21/314 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To provide a semiconductor device whose capacitor dielectric film is practically thin by a method wherein oxidation of a foundation film for forming a metal oxide film which is the capacitor dielectric film having a high specific inductive capacity is suppressed. CONSTITUTION:A process in which a titanium film 64 is formed on a polycrystalline silicon film 15 which is a lower electrode, a process in which a tantalum pentaoxide film is formed on the titanium film 64 and a process in which a natural oxide film 34 which is naturally formed on the polycrystalline silicon film 15 surface by heat or oxidizing agent contained in the titanium film 64 forming process, the tantalum pentaoxide film forming process or a wafer treatment process after them is reduced by the titanium film 64 and the titanium film 64 itself is oxidized and a titanium oxide film 65 is formed between the polycrystalline silicon film 15 and the tantalum pentaoxide film 24 are provided for forming a capacitor dielectric film.

24. 发明专利

JPH04223366A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04223366A
公开(公告)日：1992-08-13
申请号：JP41445690
申请日：1990-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAYASHIDE YOSHIO , MAEKAWA KAZUYOSHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To enable a semiconductor memory element to be possessed of a capacitor large enough in capacitance by a method wherein a metal oxide film small in thickness and high in electric constant is made to serve as a dielectric film of the capacitor. CONSTITUTION:The surface of a polycrystalline silicon film 15 serving as a lower electrode of a capacitor is nitrogenized together with a natural oxide film 34 present on the silicon film 15 through heating or a plasma method to form a silicon oxide nitride film 64. A metal oxide film 24 is formed on the silicon oxide nitride film 64 to constitute a dielectric film of two-layered structure. As the silicon oxide nitride film 64 serves as a barrier to an oxidizing agent such as oxygen or the like, the dielectric film which contains no oxide film can be obtained, and the dielectric film provided with the metal oxide film 24 can be prevented from increasing in effective thickness, and in result a capacitor of this design can be enhanced in reliability.

25. 发明专利

JPH04159754A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04159754A
公开(公告)日：1992-06-02
申请号：JP28680890
申请日：1990-10-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/768
摘要： PURPOSE:To improve adhesive properties and stability of first and second wiring layers and to reduce resistance of a connecting part by forming a connecting part for electrically connecting the first wiring layer to the second wiring layer of a metal layer selected to diffuse Si at the time of heat treating. CONSTITUTION:A first layer Al alloy interconnection film 6 is farmed on a barrier metal 5, a second interlayer insulating film 8 is formed thereon, and a connecting part 12 is so buried in a through hole 11 formed thereat as to be brought into contact with a connecting surface 6a. The part 12 is formed of a metal layer containing no Si to be diffused at the time of heat treating such as pure Al or AlCu. A second layer Al interconnection film 9 is formed to cover the film 8 on the inner wall of the hole 11 in contact with the part 12. Accordingly, Si is not precipitated in a boundary between the layer 6 and the layer 9 at the time of heat treating to mix the boundary. Thus, a resistance is not increased in the boundary between the first interconnection layer and the second interconnection layer, and the adhesive properties and stability of the boundary can be improved.

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