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21. 发明专利

JP2002162380A SEMICONDUCTOR ION SENSOR 失效
公开(公告)号：JP2002162380A
公开(公告)日：2002-06-07
申请号：JP2000358618
申请日：2000-11-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01N27/414
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor ion sensor capable of preventing an ion sensing section from inflow of sealed resin. SOLUTION: In FET creation area of a silicon substrate 1, a gate electrode 6 is formed on its main surface through a gate oxide film 5. On the main surface of a semiconductor substrate 1, a groove 17 with rectangular frame-shaped plane is formed and the gate electrode 6 is extensively-installed upward an insular area 1a enclosed by the groove 17. An ion responsive film 7 is formed throughout the main surface side of the semiconductor substrate 1 on which a protective film 11 is formed. On this protective film 11, an opening section 11b exposing an ion sensing section 15 composed of a part of the ion responsive film 7. In the main surface side of the silicon substrate 1, a recessed portion 14 is formed around the ion sensing section 15 so as to block inflow of sealed resin covering the area other than the ion sensing section 15 into the ion sensing section 15.

22. 发明专利

JP2001153832A CHLORINE ION SENSOR 失效
公开(公告)号：JP2001153832A
公开(公告)日：2001-06-08
申请号：JP33508099
申请日：1999-11-25
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAKAI ATSUSHI , SUGIURA YOSHIYUKI , ARII YASUTAKA , IITAKA YUKIO
IPC分类号： G01N27/30 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To provide a chlorine ion sensor reduced in the size and improved in detection accuracy. SOLUTION: On a substrate 1, a substantially comb-shaped platinum electrode 10a formed of a platinum thin film and a substantially comb-shaped silver/silver chloride electrode 10b formed of a silver/silver chloride thin film are arranged face to face so that the electrodes 10a, 10b mesh with each other. Because the electrodes 10a, 10b are formed of thin films respectively, the size of the device can be reduced as a whole. In addition, projection parts 12a, 12b of the electrodes 10a, 10b are arranged alternately with their side faces arranged face to face substantially, so that facing areas of the electrodes 10a, 10b can be widened. Consequently, a current amount flowing between the electrodes 10a, 10b is increased, and detection accuracy can be improved.

23. 发明专利

JP2001102739A METHOD OF MOUNTING CHIP COMPONENT 失效
公开(公告)号：JP2001102739A
公开(公告)日：2001-04-13
申请号：JP27338999
申请日：1999-09-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SUMI SADAYUKI , NIWA MASAHISA , KANI MITSUHIRO , SAKAI TAKAMASA , ARII YASUTAKA
IPC分类号： H05K3/28 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a method of mounting a chip component which is superior in low temperature heat shock resistance and high in reliability. SOLUTION: For mounting a chip component 3 on a substrate 4, electrodes 3a of the chip component 3 are soldered to electrodes 4a of the substrate 4, using an Sn-Ag-Cu alloy soldering material 1a, and a coating 2 is applied to the surface of fillets 11a formed by the solder material 1a. The Sn-Ag-Cu alloy soldering material 1a has a high drawing or tensile strength enough to raise the bond strength of the fillet 11a thereby improving low temperature heat shock resistance. The coating 2 applied to the fillet 11a surface can absorb stresses caused in the fillet 11a and relax the influence of the denature of the fillet 11a surface such as oxidation.

24. 发明专利

JP2000249612A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000249612A
公开(公告)日：2000-09-14
申请号：JP4995599
申请日：1999-02-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor with high reliability which prevents cracking in a seating due to the heat contraction of solder. SOLUTION: A semiconductor pressure sensor is formed by joining a semiconductor substrate 1 with a diaphragm 11 to a seating 2 in which a pressure introducing opening 21 for introducing pressure to the diaphragm 11 is formed and fixing the seating 2 to a package 3. In the semiconductor pressure sensor, a tubular protrusion part 22 is formed in the vicinity of an opening part on the surface side of the seating 2 opposite to the surface joined to the semiconductor 1. Then fitting structures 22a and 34a are formed between the tubular protrusion part 22 and the inner wall 34 of the pressure introducing part of the die 31 of the package 3, and the tubular protrusion part 22 and the package 3 are fitted together by the fitting structures 22a and 34a with a thermosetting material 9 present between them. Then heat is applied to the thermosetting material 9 to harden it to fix the seating 2 and the package 3.

25. 发明专利

JP2000221090A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000221090A
公开(公告)日：2000-08-11
申请号：JP2101899
申请日：1999-01-29
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To prevent a crack of a pedestal caused by thermal shrinkage of solder to provide a high reliable semiconductor pressure sensor. SOLUTION: This pressure sensor is manufactured by joining a semiconductor substrate 1 having a diaphragm 11 to a pedestal 2 formed with a pressure introduction hole 21 for introducing a pressure to the diaphragm 11, forming a thin metal film 4 on a face of the pedestal 2 opposite to a joined face to the semiconductor substrate 1, and solder-joining the formation face of the thin metal film 4 of the pedestal 2 and a die 31 of a package 3. In the pressure sensor, a metal 9 is embedded in the pedestal 2 on the joined face side to the die 31 of the package 3.

26. 发明专利

JPH11160352A APPARATUS AND METHOD FOR INSPECTION OF SEMICONDUCTOR ACCELEROMETER 失效
公开(公告)号：JPH11160352A
公开(公告)日：1999-06-18
申请号：JP32345397
申请日：1997-11-25
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01P21/00 , G01H11/06 , G01P15/12 , G01R31/28 , H01L21/66 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for inspection of a semiconductor accelerometer, in which characteristic of the semiconductor accelerometer can be inspected in a state that an acceleration is not applied to a plumb hub and in a state that a stress is not applied to a beam. SOLUTION: In an apparatus, a support which forms the outer circumference, a plumb hob 8 and a beam 11 which connects both are formed of a semiconductor substrate, and strain detector whose resistance value is changed by an acceleration applied to the plumb hob 8 is formed in the beam 11. At this time, an electrode 15 is formed in a position faced with the electrode 4 of a semiconductor accelerometer on the surface of a wafer stage 20 on which the semiconductor accelerometer is placed. A probe card 12 on which a support protrusion 17 used to keep the plumb hob 8 horizontal is provided. In a state that the electrode 4 of the semiconductor accelerometer and the electrode 15 at the probe card 12 are installed on the probe card 12 so as to be faced while the electrode formation face of the semiconductor accelerometer is face downward, the characteristic of the semiconductor accelerometer is inspected.

27. 发明专利

JPH10213500A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPH10213500A
公开(公告)日：1998-08-11
申请号：JP1355797
申请日：1997-01-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KENO TAKUJI , ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor reduced in size. SOLUTION: The semiconductor pressure sensor comprises a semiconductor pressure sensor chip 1 having a diaphragm 11 formed as a pressure receiver on a semiconductor silicon substrate and a piezo-resistor 12 and a surface electrode 13 formed on a surface side of the diaphragm 11, a substrate 7 formed with an external circuit, and binding wirings 4 for connecting the electrode 13 of the chip 1 to electrode 72 of the substrate 7. A pressure introducing hole 71 is formed at the substrate 7, the chip 1 is directly mounted on the surface side of the substrate 7, a pressure introducing unit 9 of a flange structure is mounted from a rear surface side of the substrate 7 at a position of the hole 71 of the substrate 7, and hence pressure is introduced to the diaphragm 11 via the unit 9 and the hole 71 of the substrate 7.

28. 发明专利

JPH1012687A METHOD FOR INSPECTING SEMICONDUCTOR CHIP 失效
公开(公告)号：JPH1012687A
公开(公告)日：1998-01-16
申请号：JP15966696
申请日：1996-06-20
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KENO TAKUJI , ARII YASUTAKA
IPC分类号： G01R31/26 , G01R31/02 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for inspecting a semiconductor ship with which inspection for judgement for goodness quickly performed for all. SOLUTION: Relating to a method for inspecting a semiconductor chip which is constituted in such a way that an insulating film 2 which has a step is formed on a substrate 1, and a wiring electrode 3 is formed on the insulating film 2, in a final process of semiconductor chip manufacture, a wiring electrode is, once thermal stress is applied, restored at ordinary temperature. Before and after the thermal stress is applied, changes of resistance values of wiring electrodes 3a and 3b are detected, and, based on whether the changes of the resistance values 3a and 3b exceed a specified value or not, nondefective/ defective of a semiconductor chip is judged.

29. 发明专利

JPH09250962A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09250962A
公开(公告)日：1997-09-22
申请号：JP5957896
申请日：1996-03-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can accurately measure the electric characteristics at the time of non-pressure. SOLUTION: A semiconductor silicon substrate 1 has a diaphragm 2 at the center. Piezo resistance elements 3a to 3d of pressure detecting resistors are formed on the diaphragm 2. When a pressure is applied to the diaphragm 2, the diaphragm 2 is deflected, and the resistance values of the elements 3a to 3d are varied in proportion to the deflected amount of the diaphragm 2. Measuring resistors 4a to 4d are formed on the substrate 1 out of the diaphragm 2 under the equivalent process conditions and resistance values to those of the elements 3a to 3d, and the electric characteristics of the elements 3a to 3d become equal to those of the resistors 4a to 4d. In this case, since the substrate 1 out of the diaphragm 2 is not deflected, the electric characteristics of the elements 3a to 3d at the time of non-pressure can be accurately grasped by measuring the characteristics of the resistors 4a to 4d.

30. 发明专利

JP2003098145A SEMICONDUCTOR CHEMICAL SENSOR 审中-公开
公开(公告)号：JP2003098145A
公开(公告)日：2003-04-03
申请号：JP2001290403
申请日：2001-09-25
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SUGIURA YOSHIYUKI , SAKAI ATSUSHI , ARII YASUTAKA
IPC分类号： G01N27/414 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor chemical sensor in which sensitiveness characteristics and durability are enhanced by enhancing the exfoliation resistance of an ion sensitive film without causing complication of the manufacturing process. SOLUTION: The semiconductor chemical sensor comprises a semiconductor substrate 1 where a drain region 11 and a source region 12 are formed on the major surface side while being spaced apart from each other, an insulation film 2 formed on the major surface of the semiconductor substrate 1 while making thin the parts corresponding to a part of the drain region 11 and the source region 12 and a channel region 13 between them, and an ion sensitive film 3 of a polymer material which is sensitive selectively only to a specified substance being measured and disposed to abut against the thin part of the insulation film 2. Outer edge part 32 of the ion sensitive film 3 is coated with a resin material 6 and the outer circumference at the adhesion interface of the ion sensitive film 3 and the insulation film 2 is choked with the resin material 6.

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