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21. 发明专利

JPS6343952B2 失效
公开(公告)号：JPS6343952B2
公开(公告)日：1988-09-01
申请号：JP10278481
申请日：1981-07-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： FUJIMOTO MAKOTO , OOTA YOSHIO , CHIKAMURA TAKAO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372

22. 发明专利

JPS63179331A METHOD FOR SETTING VOLTAGE OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPS63179331A
公开(公告)日：1988-07-23
申请号：JP1052887
申请日：1987-01-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA TETSU , MIYATA YUTAKA , HOTTA SADAKICHI , CHIKAMURA TAKAO
IPC分类号： G09G3/36 , G02F1/133
摘要： PURPOSE:To eliminate the personal difference of a person to set a driving voltage and to enhance the accuracy of setting of the driving voltage by converting the flicker of a display device to a constant quantity by using an evaluation parameter and setting the driving voltage so as to minimize the evaluation parameter. CONSTITUTION:The light past an LCD 4 in a thermostatic chamber 1 is detected by a photocell 5 and the average luminance is read by a voltmeter 7 and is subjected to a frequency division by an analyzer 8. The result thereof is sent via a computer 11 to a printer 13 and a plotter 14. The average luminance of the light F(t) which is sinusoidally oscillated by the single frequency fHz is designated as L, the angular velocity as omega, the max. value as F(t)max, and the min. value as F(t)min. The luminance modulation degree m indicating the degree of the flicker is used as the parameter defined by the equation and the light response waveform when the prescribed voltage is impressed to the display device is subjected to Fourier transform to know the amplitude of the specific frequency fHz component. The luminance modulation degree mf of the fHz component is determined by the equation and the offset voltage between the voltages to be applied to confronted upper and lower electrodes at the time of driving is so set as to minimize the modulation degree mf of the specific frequency f.

23. 发明专利

JPS622463B2 失效
公开(公告)号：JPS622463B2
公开(公告)日：1987-01-20
申请号：JP2412081
申请日：1981-02-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , CHIKAMURA TAKAO
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374

24. 发明专利

JPS61229357A PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPS61229357A
公开(公告)日：1986-10-13
申请号：JP7025285
申请日：1985-04-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YANO KOSAKU , AOKI YOSHITAKA , ISHIKAWA ONORI , CHIKAMURA TAKAO , YONEDA TADAO
IPC分类号： H01L27/146 , H01L31/09 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372
摘要： PURPOSE:To reduce the leakage current among a plurality of the polycrystalline Si electrodes consisting of an amorphous Si film and to raise the resolution of a photoelectric conversion device by a method wherein the polycrystalline Si having a conductivity type opposite to that of the polycrystalline Si electrodes is used for isolating the polycrystalline Si electrodes from one another. CONSTITUTION:A polycrystalline Si film is formed on the whole surface of a substrate 1, and after that, boron is implanted in polycrystalline Si film isolating parts 3 leaving parts, where are to be used as polycrystalline Si electrodes 2, and the isolating parts 3 are converted into the P-type polycrystalline Si regions. Then, an ion-implantation of phosphorus is performed in the parts of the electrodes 2 and the parts of the electrodes 2 are converted into the N-type polycrystalline Si electrodes 1. Moreover, after an activation annealing treatment is performed, an amorphous silicon film 4, which is used as the photoelectric conversion film, is formed. Then, a blocking layer 6 to be used for avoiding the effect of an electrode 5 is formed and the transparent electrode 5 is provided on the surface.

25. 发明专利

JPS61144816A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61144816A
公开(公告)日：1986-07-02
申请号：JP26908584
申请日：1984-12-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , MIYATA YUTAKA
IPC分类号： H01L21/20 , H01L31/02 , H01L33/08 , H01L33/28 , H01L33/30 , H01L33/34 , H01S5/00
摘要： PURPOSE:To obtain a high speed light receiving device of long size and large area and a light-emitting device with which a light of arbitrary wavelength can be emitted in a high degree of efficiency by a method wherein the first thin film, which is single crystallized by fusion and solidification, is coated on an insulated substrate, and the second compound semiconductor thin film, to be used for formation of an active element, is epitaxially grown on the first thin film. CONSTITUTION:The first thin film 11 consisting of Si, Ge or the mixed crystal of them and having low vapor pressure when it is fused, is coated on a high melting point insulative substrate 10 of SiO2, Al2O3 and the like, and a protective film 12 is coated on the exposed surface of said thin film 11 for the purpose of preventing deformation of the thin film of SiO2, Si3N4, Al2O3 and the like. Then, the film 11 is single-crystallized by irradiating the energy ray 13 of a laser beam such as Ar, ruby and the like, an electron beam, a heat ray and the like, the film 12 is removed, the second compound semiconductor thin film such as GaAs, AlAs, GaP, InAs and the like is deposited on the film 11 by performing an epitaxial growing method, and an active element is provided thereon. Through these procedures, a light source array suitable for self-light emitting type display is obtained.

26. 发明专利

JPS6124366A Picture information recording element and picture information reading method 失效
标题翻译：图像信息记录元素和图像信息读取方法
公开(公告)号：JPS6124366A
公开(公告)日：1986-02-03
申请号：JP14443984
申请日：1984-07-13
申请人： Matsushita Electric Ind Co Ltd
发明人： TAKEDA ETSUYA , CHIKAMURA TAKAO , FUJIWARA SHINJI
IPC分类号： G03G15/22 , H01L31/0248 , H01L31/08 , H04N1/04 , H04N5/335
摘要： PURPOSE: To attain recording and reading high in resolution and sensitivity and at a high speed while keeping excellent storage of information by providing a photoconductive layer having a sensitivity respectively to a picture information generation radiating electromagnetic wave and a scanning radiation electromagnetic wave while clipping an insulation layer and selecting the layer independently.
CONSTITUTION: The 1st photoconductive layer 1 is made of a material whose specific resistance is changed in response to incident luminous amount including picture information. The 2nd photoconductive layer 3 is made of a material having a specific resistance not deteriorating the resolution and having a sensitivity to a scanning light, the insulation layer 2 is opaque to the incident light and scanning light, holds a charge pattern to attain the separation of function of both the photoconductive layers. A voltage 6 is applied to electrodes 4, 5 as shown in figure (a), a picture pattern 7 is irradiated from the electrode 4 to form the charge distribution as shown in figure (b) and when the electrodes 4, 5 are short-circuited, the charge distribution is changed as shown in figure (c). In scanning the 2nd photoconductive layer 3 with the 2nd light 9 from the electrode 5 as shown in figure (d), a signal flows to the load 8 in response to the electric field distribution. Figure (e) is an example of a process erasing the picture information after reading the information.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了在分辨率和灵敏度高的同时以高速度进行记录和读取，同时通过提供具有灵敏度的光电导层分别提供辐射电磁波和扫描辐射电磁波的图像信息，同时限制绝缘，从而保持良好的信息存储层并独立选择层。构成：第一光电导层1由其电阻根据包括图像信息的入射光量而改变的材料制成。第二光电导层3由具有不劣化分辨率且对扫描光具有灵敏度的比电阻的材料制成，绝缘层2对入射光和扫描光不透明，保持电荷图案以达到分离两个光电导层的功能。如图（a）所示，对电极4,5施加电压6，如图（b）所示，从电极4照射图案7以形成电荷分布，当电极4,5短路时，电荷分布如图（c）所示变化。在如图（d）所示的从电极5的第二光9扫描第二光电导层3时，响应于电场分布，信号流向负载8。图（e）是在读取信息之后擦除图像信息的处理的示例。

27. 发明专利

JPS6120366A Image reading element 失效
标题翻译：图像阅读元素
公开(公告)号：JPS6120366A
公开(公告)日：1986-01-29
申请号：JP14063684
申请日：1984-07-09
申请人： Matsushita Electric Ind Co Ltd
发明人： TAKEDA NOBUYA , FUJIWARA SHINJI , CHIKAMURA TAKAO
IPC分类号： H04N1/028 , H01L27/146 , H01L31/0248
CPC分类号： H01L27/14669
摘要： PURPOSE:To obtain the titled element excellent in temperature characteristic, causing no pollution, and high-sensitive to light from visible to near infrared by a method wherein the photoconductor is made as a layer made mainly of amorphous hydrogenated Si. CONSTITUTION:An Si nitride layer 12 and an amorphous hydrogenated Si layer 13 are formed on a glass substrate 10 having an NESA film 11 and made as a photoconductor layer 14. Further, an Si oxide layer 15 and an In2O3 layer 16 are formed. This layer 16 is irradiated with patterns of light through the substrate 10 by impressing a voltage of -1,000V on the NESA film 11; thus, a distribution of electrons corresponding to the patterns of light is formed at the interface between the layer 13 and the Si oxide layer 15. When the In2O3 film 16 is short- circuited with the NESA film 11, a redistribution of charges generates on the NESA film 11 and the In2O3 layer 16 by corresponding to the patterns of charges trapped in the interface, and an electric field generates in the photoconductor layer 14 by corresponding to patterns of light. Flowing current is detected by scanning with He-Ne laser beams from the side of the In2O3 layer 16, thus converting the patterns of light into electrical signals of time series.
摘要翻译：目的：通过将感光体制成主要由无定形氢化Si形成的层的方法，获得温度特性优异的标准要素，不产生污染，对可见光对近红外光敏感。构成：在具有NESA膜11并制成感光体层14的玻璃基板10上形成Si氮化物层12和无定形氢化Si层13.此外，形成Si氧化物层15和In2O3层16。通过在NESA膜11上施加-1000V的电压，通过基板10照射该层16的图案。因此，在层13和Si氧化物层15之间的界面处形成与光图形相对应的电子分布。当In 3 O 3膜16与NESA膜11短路时，电荷的再分布产生在 NESA膜11和In 2 O 3层16，通过对应于在界面中捕获的电荷的图案，并且通过对应于光的图案在光电导体层14中产生电场。通过从In2O3层16侧的He-Ne激光束扫描来检测流动电流，从而将光的图案转换成时间序列的电信号。

28. 发明专利

JPS6136B2 失效
公开(公告)号：JPS6136B2
公开(公告)日：1986-01-06
申请号：JP486080
申请日：1980-01-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MYATA YUTAKA , CHIKAMURA TAKAO , SHIBATA TAKUO , FUJIWARA SHINJI
IPC分类号： H01L27/146 , H01L31/10 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/372

29. 发明专利

JPS6055992B2 失效
公开(公告)号：JPS6055992B2
公开(公告)日：1985-12-07
申请号：JP7444578
申请日：1978-06-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , FUJIWARA SHINJI , FUKAI SHOICHI , TERUI YASUAKI
IPC分类号： H01L27/146 , H01L31/08 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/369 , H04N5/372

30. 发明专利

JPS60235458A PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPS60235458A
公开(公告)日：1985-11-22
申请号：JP9225784
申请日：1984-05-08
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , AOKI YOSHITAKA , YANO KOUSAKU , YONEDA TADANAKA
IPC分类号： H01L31/042 , H01L27/146 , H01L31/10
摘要： PURPOSE:To use a sensitive layer having low resistivity, and to improve isolation in the lateral direction by implanting optimum B ions to a selective impurity barrier region. CONSTITUTION:Signal sampling electrodes or regions 8 are arranged selectively onto a substrate 7, an n type layer 9 in 100-500Angstrom consisting of amorphous silicon, an i layer 10 in 0.2-10mum and a p type layer 11 in 100-1,000Angstrom are deposited, and ions as a selective p type impurity such as boron B are implanted in 10 cm or more at 25keV-1MeV to form implantation regions 15. In a sensor having said structure, optical signal charges 14 generated by beams on the upper surfaces of the sampling electrodes A gradually flow toward the sampling electrodes A by a drift electric field E in the sensor. Potential barriers by the deep implantation regions 15 are shaped in the lateral direction at that time and a diffusion phenomenon is prevented, thus improving the deterioration of resolution in the lateral direction.

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