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21. 发明专利

JP2002257753A INSPECTION METHID AND INSPECTION DEVICE 失效
公开(公告)号：JP2002257753A
公开(公告)日：2002-09-11
申请号：JP2001059176
申请日：2001-03-02
申请人： HITACHI LTD
发明人： UEDA KAZUHIRO , HIRANO TATSUMI , NAITO TAKASHI , YAMAMOTO HIROTAKA , HONDA MITSUTOSHI , NAKAZAWA TETSUO
IPC分类号： G01N23/20 , G01N21/958
摘要： PROBLEM TO BE SOLVED: To detect attached foreign matter on the surface of a transparent or translucent sample in a visible light wavelength region without including inner foreign matter on the inside of the sample. SOLUTION: While X-ray beams L irradiate the inspection surface of a visible light transmissible sample B at a smaller angle than a critical angle to the inspection surface, the sample B and the X-ray beams L are relatively moved. The foreign matter A attached on the inspection surface of the sample B is detected based on the intensity variation of the X-ray beams L' reflected on the inspection surface of the sample B.

22. 发明专利

JP2000260011A MAGNETIC SENSOR AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JP2000260011A
公开(公告)日：2000-09-22
申请号：JP5973999
申请日：1999-03-08
申请人： HITACHI LTD
发明人： HIRANO TATSUMI , USAMI KATSUHISA , UEDA KAZUHIRO , HOSHIYA HIROYUKI , IMAGAWA TAKAO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To obtain a spin valve film with which an improvement in heat resistance can be expected and which have a high exchanged bond magnetic field by forming an antiferromagnetic layer having a rhombic crystal structure, taking the basic axes of the unit lattice of the crystal structure at a prescribed axis intersecting orthogonally within the film plane and a prescribed axis of the film normal and specifying the misalignment quantity of either of the basic axes of the rhombic crystal within a specific range. SOLUTION: The spin valve films are formed by deposition of Ta, NiFe, CoFe, Cu, Co, CrMnPt and Ta respective at prescribed film thickness on a substrate. The CrMnPt which is an antiferromagnetic layer is the rhombic crystal. The misalignment quantity from the cubic crystal to the rhombic crystal is preferably so set that the misalignment quantity of either of the basic axes of the rhombic crystal is within a range of 0.5 to 10% when the misalignment quantity of the rhombic crystal with respect to the cubic crystal is defined as |a-a'|/a'×100(%) by taking the basic axes of the unit lattice of the rhombic crystal at (a), (b) intersecting orthogonally within the film plane and the (c) axis of the film normal and taking the basic axis of the cubic crystal of the same volume as the volume of the unit lattice at the (a') axis.

23. 发明专利

JPH11174003A DOUBLE WAVELENGTH X-RAY SCATTERING METHOD AND THIN FILM EVALUATION DEVICE 失效
公开(公告)号：JPH11174003A
公开(公告)日：1999-07-02
申请号：JP34465397
申请日：1997-12-15
申请人： HITACHI LTD
发明人： UEDA KAZUHIRO , HIRANO TATSUMI
IPC分类号： G01N23/20 , G01N23/207
摘要： PROBLEM TO BE SOLVED: To precisely decide an incident angle of an X-ray onto a sample surface in a short time so as to perform centering of the sample quickly with high precision by being incident X-rays onto a sample with a fixed incident angle, measuring outgoing radiation dependency of scattered X-ray strength from the sample at two or more wavelengths, and finding a difference of a Yoneda peak position due to a wavelength difference. SOLUTION: By means of a sample supporting base holding incident X-rays including two or more wavelengths and a sample, a goniometer shifting and turning the sample, and an X-ray device arranged on a turntable coaxially with the rotation axis of the sample, the sample is prepared so as to be set parallelly to the incident X-ray by means of a half-splitting method and the like. Then, X-rays are incident on the sample at a predetermined incident angle, and a strength distribution to an outgoing radiation angle of the scattered X-rays generated from the sample is measured at two or more wavelengths. On the basis of a difference of Yoneda peak position due to a difference of a wavelength between the strength distributions measured at the respective wavelengths, an incident position is decided accurately. In this way, centering of the sample can be performed quickly with high precision.

24. 发明专利

JPH0915392A X-RAY ANALYZER 失效
公开(公告)号：JPH0915392A
公开(公告)日：1997-01-17
申请号：JP16175395
申请日：1995-06-28
申请人： HITACHI LTD
发明人： UEDA KAZUHIRO , USAMI KATSUHISA
IPC分类号： G01B15/02 , G01N23/00 , G21K1/04 , G21K1/06
摘要： PURPOSE: To detect incident X-ray in an irradiation region equalized for sample surface by changing the slit width of at least one of incidence and emission limiting slits in accordance with the incidence angle or emission angle of X-ray to or from the sample. CONSTITUTION: An incident X-ray width limiting slit 2 limits the width and height of the X-ray from an X-ray source and introduces as incidence light 3 with width T on a sample 5 with an incidence angle (ω) and width (t). Here, T=t/sinω. Emission X-ray 6 reflected and diffracted at the irradiated emission region 4 and generated fluorescence X-ray 11 are limited in width and height with emission limiting slits 7, 9 and individually measured with X-ray detectors 8, 10. If the slit 2 width is varied in accordance with the incidence angle ωat this moment, the dependency on incidence angle in the measuring region is eliminated. Similarly, if the width of slits 7, 9 is varied in accordance with the emission angle, the dependency of emission angle in the measuring region is eliminated. In this manner, the intensity of diffracted, reflected and fluorescent X-ray from an equal sample area can be measured with high accuracy.

25. 发明专利

JPH07302762A METHOD OF FORMING SEMICONDUCTOR SINGLE CRYSTAL LAYER 失效
公开(公告)号：JPH07302762A
公开(公告)日：1995-11-14
申请号：JP9609794
申请日：1994-05-10
申请人： HITACHI LTD
发明人： UEDA KAZUHIRO , MIYAUCHI AKIHIRO
IPC分类号： C30B25/14 , H01L21/205
摘要： PURPOSE:To reduce the flow rate of a hydrogen gas required for the formation time of a semiconductor single crystal layer for making it serviceable in a clean room by using a mixed gas of hydrogen gas and an inert gas as a carrier gas of a material gas. CONSTITUTION:Within a CVD process, a mixed gas comprising hydrogen gas and inert gasses in impurity concentration not exceeding 0.1ppm such as helium, neon, argon, krypton, xenon, etc., is to be used. Besides, a mixed gas comprising hydrogen gas and nitrogen gas in the impurity concentration not exceeding 0.1ppm is also used. Through these procedures, the cleaning effect on the substrate surface by the reducing reaction of hydrogen gas can be secured even if the flow rate of hydrogen gas is reduced, thereby enabling the excellent quality semiconductor single crystal to be produced as well as due to the possibility of reducing the flow rate of hydrogen gas the device to be fitted in a clean room for application.

26. 发明专利

JP2013072785A Low vacuum soft x-ray experiment device 有权
标题翻译：低真空软X射线实验装置
公开(公告)号：JP2013072785A
公开(公告)日：2013-04-22
申请号：JP2011212948
申请日：2011-09-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NANBU AKIRA , UEDA KAZUHIRO , YONEYAMA AKIO
IPC分类号： G21K5/00 , G21K5/02 , H05G2/00
摘要： PROBLEM TO BE SOLVED: To provide a low vacuum soft X-ray experiment device which is capable of performing a soft X-ray irradiation experiment in a low vacuum region without destroying ultra high vacuum of a synchrotron, and is excellent in operability and visibility of a sample.SOLUTION: In the low vacuum soft X-ray experiment device, in an experiment tank 8 which is connected through difference exhaust chambers (3, 5) with a radiation beam line 1 of the ultra high vacuum (Pbl 1×10Torr), an orifice of a final stage is installed at a distal end of a conical pipe 6. Also, the experiment tank 8 in which a sample 7 is arranged is constituted of a transparent member.
摘要翻译：解决的问题：提供能够在低真空区域进行软X射线照射实验而不破坏同步加速器的超高真空的低真空软X射线实验装置，并且操作性优异和样品的可视性。解决方案：在低真空软X射线实验装置中，在通过差分排气室（3,5）与超高真空（Pbl <1×10）的辐射束1连接的实验槽8中保持低真空（Pex> 1×10 - 2 Torr），最终的孔台阶安装在锥形管6的远端。另外，其中配置有试样7的实验槽8由透明构件构成。版权所有（C）2013，JPO＆INPIT

27. 发明专利

JP2010038627A X-ray imaging device and x-ray imaging method 有权
标题翻译： X射线成像装置和X射线成像方法
公开(公告)号：JP2010038627A
公开(公告)日：2010-02-18
申请号：JP2008199603
申请日：2008-08-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YONEYAMA AKIO , UEDA KAZUHIRO
IPC分类号： G01N23/04 , G01N23/20
摘要： PROBLEM TO BE SOLVED: To provide an X-ray imaging device capable of detecting the angle of refraction of a condensed X-ray beam generated by a subject in a short time with high resolving power and observing the subject with high space resolving power.
SOLUTION: The angle of refraction of the condensed X-ray beam generated by the subject is detected by using the X-ray diffraction of a crystal wherein an incident angle is adjusted so that the edge of the angle distribution of the condensed X-ray beam satisfies a diffraction condition.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够以高分辨能力在短时间内检测被检体产生的聚集的X射线束的折射角的X射线摄像装置，并以高空间分辨率观察被检体功率。解决方案：通过使用其中调整入射角的晶体的X射线衍射来检测由被摄体产生的聚集的X射线束的折射角，使得冷凝的X的角度分布的边缘射线束满足衍射条件。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2003183838A OXIDE FILM-FORMING APPARATUS AND MAGNETIC RECORDING AND REPRODUCING DEVICE 审中-公开
公开(公告)号：JP2003183838A
公开(公告)日：2003-07-03
申请号：JP2001379545
申请日：2001-12-13
申请人： HITACHI LTD
发明人： UEDA KAZUHIRO , MOMOSE HIDETO , HIRANO TATSUMI , IMAGAWA TAKAO
IPC分类号： C23C14/54 , C23C16/52 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide an oxide film-forming apparatus for forming and controlling an oxide film having a thickness on the order of nanometer, which is the main element of a magnetoresistive sensor. SOLUTION: The metal oxide film-forming apparatus having at least one metal thin film-forming chamber and at least one metal thin film-oxidizing chamber has an infrared source, a sample-supporting board, a spectroscope, an infrared detector, an infrared spectrum-treating means, a system for vacuum- transporting the sample from the metal thin film-oxidizing chamber to the sample-supporting board, a means for applying an infrared ray at an angle of incidence of 0.5-20° against the surface of the sample on the sample-supporting board wherein the sample is obtained by oxidizing in the metal thin film- oxidizing chamber, a metal thin film formed in the metal thin film-forming camber, and a means for measuring the infrared reflectance of the sample. Based on the measured reflectance, the thickness and/or the binding state of the oxide film on the metal thin film is controlled. COPYRIGHT: (C)2003,JPO

29. 发明专利

JP2003065977A Method and apparatus for inspecting laminated thin film 审中-公开
标题翻译：用于检查层压薄膜的方法和装置
公开(公告)号：JP2003065977A
公开(公告)日：2003-03-05
申请号：JP2001260515
申请日：2001-08-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIRANO TATSUMI , UEDA KAZUHIRO
IPC分类号： G01N23/20 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for inspecting laminated thin films whereby a film thickness and a density of an nm oxide film of a magnetic resistance type sensor or the like can be quickly measured and analyzed while hardly affected by a change of film thicknesses and densities of the other laminated thin films. SOLUTION: In the method for inspecting the laminated thin film by which a layer structure of the laminated thin film is inspected by sending X rays by a low angle θinto a laminated body having two or more thin films formed on a substrate, measuring an X-ray reflectivity from the laminated thin film and analyzing the reflectivity, when a refractive index of the thin film is made n=1-(λ/4π) (ξ+iη) wherein λ is an X-ray wavelength by a unit of Å, the X-ray wavelength whereby a square of a refractive index difference at an interface of the laminated film other than the test object ΔN =Δξ +Δη becomes 1.5×10 or smaller is used, and a criterion whereby a square sum of a residual between the reflectivity from a laminated thin film as a standard and the reflectivity from the laminated thin film as the test object becomes not larger than an allowable value calculated from the change of the density and the film thickness is set. The apparatus for inspecting the laminated thin film is provided with an analysis means based on the inspection method.
摘要翻译：要解决的问题：提供一种用于检查层压薄膜的方法和装置，由此可以快速测量和分析磁阻型传感器等的nm氧化膜的膜厚度和密度，同时几乎不受变化的影响的其他层压薄膜的膜厚度和密度。解决方案：在层叠薄膜的层状结构的检查方法中，通过以低角度θ将X射线发送到具有形成在基板上的两层以上的薄膜的层叠体来检查层叠薄膜，并且当薄膜的折射率为n = 1-（λ/4π）<2>（ξ+iη）时，分析反射率，其中λ是单位的X射线波长的X射线波长，其中除了被测试对象ΔN<2> =Δξ2 +Δη2之外的层叠膜的界面处的折射率差的平方为1.5×10 -8 或更小的标准，其中作为标准的叠层薄膜的反射率和作为测试对象的层叠薄膜的反射率之间的残差的平方和不等于由变化所计算的允许值设定密度和膜厚度。用于检查层压薄膜的装置设有基于检查方法的分析装置。

30. 发明专利

JP2001148231A MULTIPLE CHARGED PARTICLE DETECTOR, AND SCANNING TYPE TRANSMISSION ELECTRON MICROSCOPE 失效
公开(公告)号：JP2001148231A
公开(公告)日：2001-05-29
申请号：JP33164399
申请日：1999-11-22
申请人： HITACHI LTD
发明人： TAYA TOSHIMICHI , ISAGOZAWA SHIGETO , TANAKA HIROYUKI , KIMOTO KOJI , UEDA KAZUHIRO , AOYAMA TAKASHI
IPC分类号： H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a multiple charged particle detector by which observation of specific element image in real time is made possible. SOLUTION: In a multiple charged particle detector arranged in orbit of electron beam that is transmitted through the sample, and that is separated by energy, the multiple charged particle detector is provided comprising not less than 2 scintillators, a shielding member that separates above scintillators, photoconductors equipped to above respective scintillators, and photoelectric multipliers equipped to the respective photoconductors above.

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