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21. 发明专利

JP2008311594A Method for manufacturing thin film transistor and thin film transistor device 有权
标题翻译：制造薄膜晶体管和薄膜晶体管器件的方法
公开(公告)号：JP2008311594A
公开(公告)日：2008-12-25
申请号：JP2007160621
申请日：2007-06-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIBA TAKEO , HASHIZUME TOMIHIRO , SUWA YUJI , ARAI TADASHI
IPC分类号： H01L21/336 , H01L21/288 , H01L29/786 , H01L51/05
CPC分类号： H01L51/0012 , H01L27/283 , H01L51/0004 , H01L51/0022 , H01L51/0545 , H01L51/0558 , H01L51/105
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor device, which enables a complementary TFT circuit constituting a thin-shaped and light-weighted image display device or a flexible electronic device to achieve high performance, low power consumption, and reduction of a manufacturing cost and further reduces the number of manufacturing processes and simplifies mass production or enlargement by printing.
SOLUTION: Electrodes and organic semiconductors constituting TFTs of an n-type and a p-type are formed by an application printing technique by using the same material in both TFTs, a first polarizable thin film 7 is provided on an interface of a gate insulating film and the semiconductor and a second polarizable film 8 on an interface of a source and drain electrode 5 and semiconductor film 9, and a function of polarization is removed from the first and second polarizable films of the region by exposing one of regions of the n-type TFT and the p-type TFT selectively, thereby a complementary thin film transistor is manufactured.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造薄膜晶体管器件的方法，其能够构成薄形和轻型图像显示器件或柔性电子器件的互补TFT电路实现高性能，低功率消耗和降低制造成本，并且进一步减少制造工艺的数量，并通过印刷简化批量生产或扩大。解决方案：通过在两个TFT中使用相同材料的应用印刷技术形成构成n型和p型TFT的电极和有机半导体，在第一可极化薄膜7的界面上设置第一可极化薄膜7 栅极绝缘膜和半导体以及源极和漏极5和半导体膜9的界面上的第二可极化膜8，并且通过使区域的第一和第二可极化膜从区域的第一和第二极化膜选择性地形成n型TFT和p型TFT，从而制造互补薄膜晶体管。版权所有（C）2009，JPO＆INPIT

22. 发明专利

JP2008277469A Method for exposing photosensitive sam film, and method for manufacturing semiconductor device 审中-公开
标题翻译：曝光光敏SAM膜的方法及制造半导体器件的方法
公开(公告)号：JP2008277469A
公开(公告)日：2008-11-13
申请号：JP2007117955
申请日：2007-04-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ARAI TADASHI , SHIBA TAKEO , ANDO MASAHIKO
IPC分类号： H01L21/336 , H01L21/288 , H01L21/3205 , H01L29/786 , H01L51/05
CPC分类号： G03F7/165 , H01L51/0023 , H01L51/055 , H01L51/102 , Y10S977/896 , Y10S977/901
摘要： PROBLEM TO BE SOLVED: To dramatically reduce a cost by using a photo mask for positioning since an electrode substrate, where a lower electrode and an upper electrode are excellently positioned via an insulating film, is hardly formed due to a position deviation in a printing method.
SOLUTION: This photosensitive SAM film exposing method is a method for depositing, on the substrate, a self-assembled monomolcular film (a photosensitive SAM film) having photosensitivity, and indicating liquid repellency before photosensitization and lyophilia after photosensitization and allowing the deposited surface of the substrate to be in a soaked state in a liquid or in a contact state with the liquid with a photosensitive surface facing down, and then, exposing the substrate. Exposure light is UV light or visible light, and its wavelength is ≥350 nm and ≤800 nm. The liquid is at least one of organic solvents containing aromatic rings and organic solvents of alcohol ether or ketones.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了通过使用光掩模进行定位来显着降低成本，因为通过绝缘膜，下电极和上电极优良地定位的电极基板由于位置偏差而难以形成一种印刷方法。该感光性SAM膜曝光方法是在基板上沉积具有感光性的自组装单体膜（感光性SAM膜）的方法，并且在光敏化之后表示疏液性和在光敏化后的冻干，并允许沉积衬底的表面处于处于液体中的浸泡状态或与感光表面朝下的液体接触状态，然后暴露衬底。曝光光是紫外光或可见光，其波长≥350nm和≤800nm。液体是含有芳香环的有机溶剂和醇醚或酮的有机溶剂中的至少一种。版权所有（C）2009，JPO＆INPIT

23. 发明专利

JP2006269709A Manufacturing method of semiconductor device having organic thin film transistor 审中-公开
标题翻译：具有有机薄膜晶体管的半导体器件的制造方法
公开(公告)号：JP2006269709A
公开(公告)日：2006-10-05
申请号：JP2005085288
申请日：2005-03-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ARAI TADASHI , SAITO SHINICHI
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/105
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic thin film transistor having a fine pattern form only by means of a printing method and having correctly positioned lower and upper electrodes self-alignedly opposing via an insulation film without using a photomask.
SOLUTION: Since the lower electrode is used as the photomask to align in position with the upper electrode, no shift in position occurs even if the printing method is employed. Thus, a semiconductor device such as a flexible substrate using an organic semiconductor can be inexpensively formed by the printing method.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：仅通过印刷方法提供具有精细图案形式的有机薄膜晶体管的制造方法，并且具有通过绝缘膜自对准地对准的正确定位的下电极和上电极，而不使用光罩。解决方案：由于下电极用作光掩模以与上电极对准，所以即使采用印刷方法也不会发生位置偏移。因此，可以通过印刷方法廉价地形成诸如使用有机半导体的柔性基板的半导体器件。版权所有（C）2007，JPO＆INPIT

24. 发明专利

JP2003215790A RADIATION SENSITIVE COMPOSITION AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 审中-公开
公开(公告)号：JP2003215790A
公开(公告)日：2003-07-30
申请号：JP2002016321
申请日：2002-01-25
申请人： HITACHI LTD
发明人： HATTORI KOJI , TANAKA TOSHIHIKO , SHIRAISHI HIROSHI , ARAI TADASHI , UTAKA SONOKO
IPC分类号： G03F7/004 , C08F2/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a radiation sensitive composition which suppresses the diffusion of radical reaction to control the reaction region and to improve the resolution, and which can form a fine pattern. SOLUTION: The radiation sensitive composition containing at least a radical generating agent, radical reactive monomers and a base polymer, further contains a nitroxyl compound expressed by formula (1). In formula (1), each of R 1 , R 2 , R 5 and R 6 represents hydrogen atom, a 1-10C alkyl group, an aryl group, an alkyl group with a substituent such as an alkylphenyl group, a phosphate group or the like, each of R 3 and R 4 represents hydrogen atom, a 1-10C alkyl group, a phenyl group or an alkyl group with a substituent such as an alkylphenyl group or may be coupled to each other to form a ring. Or, the radiation sensitive composition contains at least a polymer which radically cleaves by irradiation with active radiation and a base polymer, and the composition further contains a nitroxyl compound. COPYRIGHT: (C)2003,JPO

25. 发明专利

JP2002214765A POSITIVE CHEMICALLY AMPLIFYING PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING RESIST IMAGE 失效
公开(公告)号：JP2002214765A
公开(公告)日：2002-07-31
申请号：JP2001007090
申请日：2001-01-15
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： KATO KOJI , HASHIMOTO MASAHIRO , KASUYA KEI , ARAI TADASHI , SAKAMIZU TOSHIO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive chemically amplifying photosensitive resin composition having high sensitivity, high resolution, a preferable pattern profile and excellent process stability and to provide a method for manufacturing a resist image with preferable resolution by using the above composition. SOLUTION: The positive chemically amplifying photosensitive resin composition contains (a) a compound having acid-decomposable groups which increase the solubility with an alkali aqueous solution by acid catalytic reaction in the molecule, with the molecular weight of the compound decreasing by the acid catalytic reaction, (b) a compound which produces an acid by irradiation of actinic rays, and (c) an epoxy compound having 80 to 180 deg.C boiling point. The resist image is manufactured by forming a coating film by using the above composition, irradiating the film with actinic rays and developing.

26. 发明专利

JP2001133967A RADIATION SENSITIVE COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR PRODUCING PHASE SHIFT MASK USING SAME 失效
公开(公告)号：JP2001133967A
公开(公告)日：2001-05-18
申请号：JP31903199
申请日：1999-11-10
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SAKAMIZU TOSHIO , ARAI TADASHI , KATO KOJI , KASUYA KEI , HASHIMOTO MICHIAKI
IPC分类号： H01L21/027 , G03F1/26 , G03F1/68 , G03F1/80 , G03F7/004 , G03F7/38 , G03F7/40 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To obtain a radiation sensitive composition excellent in sensitivity, resolution and pattern shape and to provide a pattern forming method using the composition. SOLUTION: The radiation sensitive composition contains at least (a) a sulfonic ester derived from a 4-8C alkylsulfonyl halide having a fluorine atom as a characteristic group or a 4-8C alkoxyalkylsulfonyl halide having a fluorine atom as a characteristic group and (b) a medium having such reactivity as to vary its solubility to an aqueous alkali solution by an acid catalyzed reaction.

27. 发明专利

JP2001066775A POSITIVE CHEMICAL AMPLIFICATION TYPE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION OF RESIST PATTERN AND PRODUCTION OF ELECTRONIC DEVICE 失效
公开(公告)号：JP2001066775A
公开(公告)日：2001-03-16
申请号：JP23911199
申请日：1999-08-26
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： KASUYA KEI , KATO KOJI , HASHIMOTO MASAHIRO , ARAI TADASHI , SAKAMIZU TOSHIO
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a positive type chemical amplification type photosensitive resin composition of superior sensitivity, resolution and pattern shape, a method for producing a resist pattern of superior resolution, pattern shape, work efficiency and productivity and a method for producing an electronic device of superior resolution, pattern shape, work efficiency and productivity. SOLUTION: This photosensitive resin composition contains (a) an alkali water-soluble resin, (b) at least two polyphenol compounds, (c) a compound which generates acid when irradiated with active actinic rays and (d) a compound having an acid decomposable group which increases solubility in the aqueous alkali solution by an acid catalyzed reaction in a side chain. A coating film of the photosensitive resin composition is irradiated with active actinic rays and developed to produce the object resist pattern. The photosensitive resin composition is applied and dried on the circuit forming face or protective film forming face of an electronic circuit and the resulting coating film is irradiated with active actinic rays and developed to produce the object electronic device.

28. 发明专利

JP2000292941A MANUFACTURE OF PHOTOMASK 失效
公开(公告)号：JP2000292941A
公开(公告)日：2000-10-20
申请号：JP10371399
申请日：1999-04-12
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： ARAI TADASHI , UCHINO MASAICHI , SAKAMIZU TOSHIO , SAITO HIDETAKA , SOGA TAKASHI , KASUYA KEI
IPC分类号： H01L21/302 , G03F7/42 , H01L21/306 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a high-grade photomask in a high yield without the remaining of resist in a submicron pattern part by using a specific aqueous alkaline solution as a peeling liquid. SOLUTION: The resist peeling liquid after etching is an aqueous alkaline solution of a pH of >=13.7 and is the aqueous solution containing at least >=1 kind selected from among a quaternary ammonium compound expressed by formula [(R1)3N-R2].OH (where, R1 is a 1-4C alkyl group; R2 is a 1-4C alkyl group or 1-4C hydroxyalkyl group; N is nitrogen and OH is hydroxyl group) or an inorganic alkaline compound expressed by formula A.OH (where, A is an alkaline metal and OH is hydroxyl group). The peeling liquid having a pH larger than 13.7 is preferable. If it is below 13.7, the remaining of the resist in a film form after peeling in the micropatterns after the etching is resulted.

29. 发明专利

JP2000155419A CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR FORMING PHOTOMASK BY USING SAME 失效
公开(公告)号：JP2000155419A
公开(公告)日：2000-06-06
申请号：JP33223998
申请日：1998-11-24
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： ARAI TADASHI , SAKAMIZU TOSHIO , SOGA TAKASHI , SHIRAISHI HIROSHI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/032 , G03F7/039 , G03F7/30 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide the resist composition developable with an aqueous alkaline solution and capable of obtaining a positive pattern good in dimensional control free from trailing on a photomask substrate. SOLUTION: The resist composition comprises (a) a compound to be allowed to generate acid by applying radiation, (b) a reactive medium to be allowed to increase solubility in an aqueous alkaline solution by catalytic reaction with acid, and (c) a resin composition prepared by adding a specified phenolic compound to a phenolic polymer specified in molecular weight distribution, and the above phenolic polymer has a dissolution velocity of 1-10 nm/sec in the developing solution and a ratio of DR (100-50) to a DR (50-0) is >=0.75 in the chemically amplified resist composition, where DR (100-50) is an average dissolution rate of the coating film of the above resin composition (c) from the start of dissolution (100% thickness) to 50% thickness, and DR (50-0) is that from the 50% thickness to 0% thickness.

30. 发明专利

JPH11135397A FORMING METHOD FOR NEGATIVE TYPE RESIST PATTERN 失效
公开(公告)号：JPH11135397A
公开(公告)日：1999-05-21
申请号：JP29665497
申请日：1997-10-29
申请人： HITACHI LTD
发明人： SHIRAISHI HIROSHI , HATTORI KOJI , SAKAMIZU TOSHIO , ARAI TADASHI
IPC分类号： G03F7/023 , G03F7/038 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method in which an advantage of a surface imaging method using a resin material which has an aromatic ring structure, having high dry etching resistance and a negative type pattern is formed with high sensitivity, even in the case of a light lithography using an ArF excimer laser light source. SOLUTION: A lower layer resist 2 having a surface layer part comprising components including an aromatic ring and having a functional group which is protected by an acid decomposing group is formed on a substrate 1, a photosensitive layer 3 which is made of an applying material, virtually not having an absorbing band in an ArF excimer laser exposure wavelength and an acid precursor is formed thereon, a predetermined pattern exposure is performed, and acid is made to be generated at the exposure part. The functional group which is protected by the acid resolving group of the lower layer resist 2 contacting with the acid generating part 5 is protected. The photosensitive layer 3 is eliminated, the surface which is protected is exposed and processed by an reactive organic metal regent, and the lower layer resist 2 is exposed in an oxidizing atmosphere.

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