专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH06283744A SOLAR CELL 失效
公开(公告)号：JPH06283744A
公开(公告)日：1994-10-07
申请号：JP8690992
申请日：1992-04-08
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , NAKAZONO RYUICHI
IPC分类号： H01L31/04
摘要： PURPOSE:To enhance the photoelectric conversion efficiency of the title solar cell by a method wherein a recombination-preventing layer is provided with a band-gap energy grade in such a way that the grade is large on the side away from a p-n junction and that the grade is small on the side close to the p-n junction. CONSTITUTION:An action region layer 12 composed of n-type GaAs, an action region layer 13 composed of p-type GaAs and a window layer 14 as a recrystallization-preventing layer composed of p-type GaAlAs are formed sequentially on a substrate 11 composed of n-type GaAs. An antireflection film 15 is formed on the surface of the window layer 14, the window layer 14 is passed in a part of the antireflection film, and a p-side electrode 16 is formed. Band-gap energy becomes suddenly large on the surface side, and it becomes small in a p-n junction part. As a result, electrons excited by incident light are influenced by an electric field existing inside the window layer 14, and they are moved smoothly toward the side of the action region layer 13. Thereby, generated electrons are prevented from being recombined and lost, and the photoelectric conversion efficiency of the title solar cell can be enhanced.

22. 发明专利

JPH0572360B2 失效
公开(公告)号：JPH0572360B2
公开(公告)日：1993-10-12
申请号：JP3750586
申请日：1986-02-24
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , WAJIMA MINEO , TATE HISAFUMI , KONNO TAIICHIRO , SUGIMOTO HIROSHI , KUMA SHOJI
IPC分类号： C30B19/08 , C30B29/42 , H01L21/208

23. 发明专利

JPH05235410A 失效
公开(公告)号：JPH05235410A
公开(公告)日：1993-09-10
申请号：JP3914192
申请日：1992-02-26
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO
IPC分类号： H01L31/10 , H01L33/00 , H01L33/10 , H01L33/14 , H01L33/30 , H01L33/44 , H04B10/00 , H04B10/40 , H04B10/43 , H04B10/50 , H04B10/60 , H04B10/02 , H04B10/24
摘要： PURPOSE:To reduce loss by equalizing size and price in a reception exclusive module or a transmission exclusive module. CONSTITUTION:Only one single-wavelength photo-detector having structure close to a GaAs/GaAlAs group DH junction LED is used as an optical semiconductor element 7 for transmission and reception, and the photo-detector is given both functions of light reception and emission. When forward voltage operating the element 7 as a light-emitting device is applied to the element 7 from a power circuit 8 for changing over transmission and reception, the element 7 functions as the light-emitting device. When a signal for transmission is applied to the element 7 from a signal processing circuit 9 for transmission, the signal is converted into light, and output to a fiber 1. When reverse voltage operating the element 7 as a photo-detector is applied to the element 7 from the power circuit 8, the element 7 functions as the photo-detector. The signal output from the fiber 1 is converted into an electric signal by the photo-detector. The received signal is input to a signal processing circuit 10 for reception and processed. Accordingly, single-wavelength light-reception-emission is enabled in the single element.

24. 发明专利

JPH0510314B2 失效
公开(公告)号：JPH0510314B2
公开(公告)日：1993-02-09
申请号：JP29417586
申请日：1986-12-10
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , WAJIMA MINEO , TATE HISAFUMI , KONNO TAIICHIRO , SUGIMOTO HIROSHI
IPC分类号： C30B19/00 , C30B29/40 , H01L21/208

25. 发明专利

JPH04280481A LIGHT EMITTING DIODE 失效
公开(公告)号：JPH04280481A
公开(公告)日：1992-10-06
申请号：JP4323591
申请日：1991-03-08
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO
IPC分类号： H01L33/14 , H01L33/30
摘要： PURPOSE:To provide high output and high reliability by providing a current blocking layer which is installed between a semiconductor substrate and a clad layer, and makes pn junction with the clad layer based on conduction type opposite to the clad layer and gets reverse biases when switched on. CONSTITUTION:An n-type GaAlAs current blocking layer 10 is formed on a p-type GaAs substrate 5 which has formed a ring-shaped mesa section 9 in such a fashion that it may be slightly lower than the tip of the ring-shaped mesa section 9, Then, a p-type GaAlAs clad layer 4, a p-type GaAlAs active layer, and an n-type GaAlAs window layer 2 are successively formed. A p-type whole surface electrode 6 is formed on this substrate 5. The current blocking layer 10 forces the pn junction formed on the interface between the current blocking layer 10 and the clad layer 4 when a light emitting diode is switched on to get reversely biassed, thereby forming a depletion layer. This construction makes it possible to block the flow of carriers by resultant higher resistivity.

26. 发明专利

JPH0412614B2 失效
公开(公告)号：JPH0412614B2
公开(公告)日：1992-03-05
申请号：JP4940085
申请日：1985-03-14
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , OTOKI YOHEI , NAKAZONO RYUICHI
IPC分类号： H01L21/00 , H01L21/208 , H01L21/306

27. 发明专利

JPH0338072A RED COLOR LIGHT EMITTING DIODE 失效
公开(公告)号：JPH0338072A
公开(公告)日：1991-02-19
申请号：JP17339689
申请日：1989-07-05
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , KUMA SHOJI , WAJIMA MINEO , TATE HISAFUMI
IPC分类号： H01L33/30
摘要： PURPOSE:To increase the light emitting output by a method wherein the carrier concentration of an active layer is made higher than that of p type clad layer while respective concentrations are specified. CONSTITUTION:In such a structure wherein a double hetero-structure i.e., an active layer 3 in AlAs mixed crystal ratio of around 0.35 is held between a p type clad layer 2 and n type clad layer 4 in AlAs mixed crystal ratio of 0.60-0.85, the carrier concentration of the active layer 3 is changed from 5X10 cm to 1.5X10 cm while the carrier concentration of the p type clad layer 2 is changed from 1.0X10 cm to 1.0X10 cm . Furthermore, the carrier concentration of the active layer 3 is made higher than that of the p type active layer 2. Through these procedures, the light emitting output can be increased.

28. 发明专利

JPH01201093A METHOD FOR LIQUID-PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH01201093A
公开(公告)日：1989-08-14
申请号：JP2469788
申请日：1988-02-04
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , WAJIMA MINEO , TATE HISAFUMI , KONNO TAIICHIRO , SUGIMOTO HIROSHI
IPC分类号： H01L21/208 , C30B19/00
摘要： PURPOSE:To improve the crystallinity of an active layer in the liquid-phase epitaxial growth of a multi-layer growth phase, by setting the slow cooling rate of an arbitrary layer form the end of growth of the layer to the initial stage of the growth of the subsequent layer to be lower than the slow cooling rates of the preceding and subsequent stages. CONSTITUTION:A growth solution holder 4 containing growth solutions 6, 7, etc., for the 1st to the n-th layers is placed on a freely movable substrate holder 5 supporting a substrate 1. The substrate 1 is made to successively contact with the growth solutions 6, 7, etc., for the 1st to the n-th layers and n-layers of epitaxial growth layer is grown by slowly cooling method. The temperature program of the growth solution during the growth of the (m-1)-th and m-th layers (n>=m>=2) is set in a manner that the slowly cooling rate between the end of the growth of the (m-1)-th layer to the initial stage of the growth of the m-th layer is lower than the slowly cooling rate of the preceding and subsequent stages. An active layer having high crystallinity can be grown by this process.

29. 发明专利

JPS6461385A LIQUID EPITAXIAL GROWTH PROCESS 失效
公开(公告)号：JPS6461385A
公开(公告)日：1989-03-08
申请号：JP21805387
申请日：1987-09-02
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , WAJIMA MINEO , TATE HISAFUMI , KONNO TAIICHIRO , SUGIMOTO HIROSHI
IPC分类号： C30B29/42 , C30B19/00 , C30B29/40 , H01L21/208
摘要： PURPOSE:To improve uniformity and reproducibility of film thickness and obtain an epitaxially grown layer in high mass-productivity and accuracy, by transferring a solution for growth to a specific intermediate solution reservoir in a vertical epitaxial growth process, adjusting the solution to a supersaturated state with uniform temperature gradient and contacting the solution with a substrate. CONSTITUTION:An intermediate liquid reservoir 5 having plural narrow spaces 5b having a thickness of 1-10mm and partitioned with plural partition walls 5a is placed between a growth solution reservoir 2 holding a growth solution 8 and a substrate holding part 4 placed above the reservoir 2 and holding plural substrates 7 with respective holding tools 4a in vertical state. In the above vertical epitaxial growth apparatus, polycrystalline GaAs is dissolved in Ga held in the growth solution reservoir 2 to saturated state and the obtained growth solution 8 is dispensed to each space 5b by pushing a reciprocative piston 3 and slowly cooled to uniformize the temperature distribution and to get supersaturated state. The piston 3 is further pushed forward to contact the solution with plural substrates 7 such as GaAs held vertically with the substrate holding part 4 to start the epitaxial growth. A multiple-layered epitaxial growth wafer having uniform film thickness can be produced by this process.

30. 发明专利

JPS63250835A INSPECTION OF EPITAXIAL WAFER 失效
公开(公告)号：JPS63250835A
公开(公告)日：1988-10-18
申请号：JP8636387
申请日：1987-04-08
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , WAJIMA MINEO , TATE HISAFUMI , KONNO TAIICHIRO , SUGIMOTO HIROSHI
IPC分类号： H01L21/66 , G01N21/63 , H01L33/30 , H01L33/60
摘要： PURPOSE:To evaluate the characteristics of a light-emitting diode by a noncontact method in the wafer stage by a method wherein the optical luminescence, which is generated when a laser beam is obliquely projected on the surface of a wafer, is allowed to be reflected by a reflecting mirror and then detected by a photomultiplier. CONSTITUTION:An epitaxial wafer 1 is set on a wafer prober 2, and a laser oscillator 3 is actuated for the emission of an argon ion laser beam L1, which goes into a spectrograph 4. The spectrograph 4 changes the beam L1 into a beam L2, which is projected on a mirror 5, which projects a beam L3 obliquely on the epitaxial wafer 1. Optical excitation attributable to the energy of the beam L3 results in a luminescence L4, which goes into a reflecting mirror 6 for the generation of a reflected beam L5. The reflected beam L5 goes into a spectrograph 7, and is amplified by a photomultiplier 8 for measurement. In this way, the characteristics of a light-emitting diode may be rated in the wafer stage by using a noncontact method.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式