专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH07221025A MANUFACTURE OF THIN FILM PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPH07221025A
公开(公告)日：1995-08-18
申请号：JP797194
申请日：1994-01-28
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE:To make it possible to form a film of good quality on a flexible board having a through hole, by making both spaces into a vacuum state through an air path provided between both spaces surrounded with the flexible board and each member in a film formation chamber, and preventing raw gas remaining in the spaces. CONSTITUTION:Inside walls 61 and 71 joined with each outer wall 6 or 7 of upper and lower film formation chambers are provided opposite to each other. The inside walls 61 and 71 have round discharging openings 13 and 14 as a bypass between both film formation spaces. During the film formation, the flexible board is put between the end of the wall 6 of the upper film formation chamber and the end of the wall 7 of the lower film formation chamber. The flexible board on one side of the film formation chamber is put between edge parts of the faces of the inside walls 61 and 71 and sealed hermetically from an inside space 10 of the lower film formation chamber with a sealing material 8.

22. 发明专利

JPH065892A THIN-FILM SOLAR CELL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH065892A
公开(公告)日：1994-01-14
申请号：JP15709292
申请日：1992-06-17
申请人： FUJI ELECTRIC CO LTD
发明人： OTA HIROMITSU , FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To fabricate a highly efficient thin-film solar cell by producing a 'P' layer positioned on a light-incident side of an 'i' layer from a-Si:O:N that results on a substrate from the addition of gas including impurities for doping to a mixed gas in which SiH4 and N20 are diluted with hydrogen to decompose the mixed gas. CONSTITUTION:An SnO2 film is formed on a glass substrate 1 as a transparent electrode 2. The substrate is mounted on a plasma CVD system, and a p-type a-SiO2 film 3 is formed with the use of SiH4 and CO2 as a main gas, H2 as a diluent gas and B2H6 as a doping gas by means of the glow-discharge decomposing method. A p/i boundary layer 4 of the a-SiC is formed with the use of SiH4 and CH4 as a main gas and H2 as a diluent gas. A temperature of the substrate is increased to 200-250 deg.C, and an i-material a-Si layer 5 is formed with the use of SiH4 as a main gas and H2 as a diluent gas. An n-type a-Si layer 6 is formed over the layer 5 with the use of SiH4 as a main gas, H2 as a diluent gas and PH3 as a doping gas. Finally, a metal electrode 7 is formed by deposition of Ag and patterning.

23. 发明专利

JPH04320380A MANUFACTURE OF SOLAR CELL 失效
公开(公告)号：JPH04320380A
公开(公告)日：1992-11-11
申请号：JP8711191
申请日：1991-04-19
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To solve problems in which an increase in an area of a transparent electrode to be provided at a light incident side of a solar cell is difficult caused by higher sheet resistance than that of a metal electrode and a process for reducing a resistance of a pectinated metal condensing electrode by depositing is difficult owing to a large area. CONSTITUTION:A transparent electrode is formed of a lower layer of SnO2 3 or ITO and an upper layer of ZnO, a groove 70 is cut on the ZnO layer 7 to expose the lower layer, and the surface of the lower layer is then reduced in a stripe state by H2 processing to reduce its resistance. In this case, the ZnO is not deteriorated in quality. If a low resistance layer is formed in a pectinated state, a transparent electrode having a large area is obtained. In an integrated solar cell, a width of the transparent electrodes of unit cells connected in series can be increased.

24. 发明专利

JPH02106076A THIN FILM SOLAR CELL 失效
公开(公告)号：JPH02106076A
公开(公告)日：1990-04-18
申请号：JP25898888
申请日：1988-10-14
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To assure the reduction of power loss and the improvement of conversion efficiency by a method wherein the first interface layer comprising no- dopant added alpha-Si is provided on a p layer side while the second interface layer comprising no-dopant added alpha-Si formed at lower temperature than that in an i layer is provided on the i layer side between the p layer and the i layer. CONSTITUTION:The first interface layer 4 comprising no-dopant added amorphous silicon carbide alpha-SiC is provided on a p layer 3 side while the second interface layer 5 comprising no-dopant added amorphous silicon alpha-Si formed at lower temperature than that in an i layer is provided on the i layer 6 side between the p layer 3 and the i layer 6. The second interface layer 5 formed at lower temperature than that in the i layer 6 can be provided with wider band gap than that in the i layer 6 to obstruct any incident rays into the i layer 6 moreover filling the role of an excellent threshold in low density of defects due to the alpha-Si composition thereof. Through these procedures, the reduction of power loss and the improvement of conversion efficiency can be assured.

25. 发明专利

JPH0227774A SOLAR CELL DEVICE 失效
公开(公告)号：JPH0227774A
公开(公告)日：1990-01-30
申请号：JP17641488
申请日：1988-07-15
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI , ICHIKAWA YUKIMI
IPC分类号： H01L31/04
摘要： PURPOSE:To eliminate a leakage current through a fine crystalline Si layer by insulating adjacent unit solar cells by an air gap between the end of a printed electrode in contact with the transparent electrode of the cell and the side face of the fine crystalline Si layer edge of the adjacent unit solar cell. CONSTITUTION:Gaps between printing electrodes 51 and 52, 52 and 53 are presented not only on fine crystalline Si layers 42, 43 but on transparent electrodes 22, 23. Thus, the electrodes 51 and 52 are insulated therebetween by air gaps 61 between the end of the electrode 51 and an a-Si layer 32, a fine crystalline Si layer 42, and the electrodes 52 and 53 are insulated therebetween by air gaps 62 between the end of the electrode 52, an a-Si layer 33, a fine crystalline Si layer 43. Thus, the electrodes between adjacent unit solar cells are completely insulated, and the characteristics of an inexpensive solar cell using the electrodes can be improved.

26. 发明专利

JP2003264308A THIN FILM SOLAR CELL MODULE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003264308A
公开(公告)日：2003-09-19
申请号：JP2002063221
申请日：2002-03-08
申请人： FUJI ELECTRIC CO LTD
发明人： SAITO KIYOO , FUJIKAKE SHINJI
IPC分类号： H01L31/042
摘要： PROBLEM TO BE SOLVED: To provide a thin film solar cell module and its manufacturing method, in which a submodule employing a glass substrate is protected against cracking when the submodule and cover glass are secured using adhesive resin, e.g. EVA. SOLUTION: Thin films of a metal electrode layer, a photoelectric conversion layer, and a transparent electrode layer are formed sequentially, in layers, on the surface of a glass substrate 11 to manufacture a unit cell and on the surface side of the transparent electrode layer of a thin film solar cell submodule 3 formed by connecting the unit cells electrically in series, the cover glass 1 is arranged through an EVA layer 2, and the inner wiring 20 of the submodule is connected electrically with an external power lead-out terminal by a power lead wire 4. In such a thin film solar cell module, the glass substrate has a groove 22 for embedding the inner wiring and a hole 21 formed in one end of the groove, and the inner wiring 20 is connected electrically with the transparent electrode layer at the groove, and connected electrically with the power lead wire 4 in the hole. COPYRIGHT: (C)2003,JPO

27. 发明专利

JP2003101052A CONDUCTIVE LIGHT-REFLECTING FILM, FORMING METHOD THEREFOR AND SOLAR BATTERY 审中-公开
公开(公告)号：JP2003101052A
公开(公告)日：2003-04-04
申请号：JP2001295937
申请日：2001-09-27
申请人： FUJI ELECTRIC CO LTD
发明人： UNO MASAYOSHI , FUJIKAKE SHINJI
IPC分类号： C23C14/06 , C22C5/06 , C23C14/14 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To obtain a conductive light-reflecting film on which proper texture structure is installed and light confinement effect is large, and to provide its forming method. SOLUTION: An Ag alloy layer containing Al in a range of 0.1-1.0 atm.%, or an Ag layer and an Ag alloy layer containing Al in a range of 0.1-1.0 atm.% are laminated on a substrate, and a reflection film is formed. As a result, a conductive light-reflecting film having scattering reflectivity in the long wavelength region is high is obtained. When the film is applied to a thin film solar battery such as and a-Si solar battery, short-circuiting current is increased due to light confinement effect, so that conversion efficiency is increased. Moreover, the Ag layer, the Ag alloy layer containing Al, and an oxide transparent electrode film can be laminated under the same temperature conditions.

28. 发明专利

JP2001226776A THIN FILM DEPOSITION SYSTEM BY PLASMA DISCHARGE AND METHOD OF MANUFACTURING SHOWER ELECTRODE FOR THE SYSTEM 失效
公开(公告)号：JP2001226776A
公开(公告)日：2001-08-21
申请号：JP2000035572
申请日：2000-02-14
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L21/205 , C23C16/505 , C23C16/54 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a highly productive thin film deposition system by plasma discharge provided with a durable shower electrode to make the continuous film depositing time as long as possible and a deposition preventive sheet and a method of manufacturing the shower electrode for the system. SOLUTION: A grounded electrode is provided on one side of a substrate for thin film deposition in a film deposition chamber, and a high-frequency electrode provided with an electrode main body, a gas inlet and a shower electrode having a gas circulating hole is furnished on the other side to constitute a thin film deposition system for depositing a thin film on the principal plane of the substrate. In this case, a second small rugged face is allowed to overlap a first large rugged face to let the surface of the shower electrode 5 have two large and small average surface roughnesses.

29. 发明专利

JP2001168354A AMORPHOUS THIN FILM SOLAR BATTERY 失效
公开(公告)号：JP2001168354A
公开(公告)日：2001-06-22
申请号：JP34620699
申请日：1999-12-06
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To improve efficiency of a pin-type amorphous thin film solar battery with a layer of amorphous silicon (μc-Si) comprising fine crystalline phase by restraining characteristics of deterioration after optical irradiation. SOLUTION: A p/i interfacial layer 5 such as amorphous silicon (a-Si) of p-type and low impurity concentration whose band gap is wider than that of a p-layer 6 is held between the μc-Si p-layer 6 and an amorphous silicon germanium (a-SiGe) i-layer 4.

30. 发明专利

JPH09307128A MANUFACTURING EQUIPMENT AND METHOD OF THIN FILM PHOTOELECTRIC TRANSDUCER 失效
公开(公告)号：JPH09307128A
公开(公告)日：1997-11-28
申请号：JP12414896
申请日：1996-05-20
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI , ICHIKAWA YUKIMI
IPC分类号： C23C16/54 , H01L21/205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To form a photoelectric conversion layer having high quality multilayered structure with height productivity by forming each thin film on a belt type flexible substrate wound up from one roll to the other roll. SOLUTION: In a stepping roll system which stops a substrate and form a film, an intermediate storing mechanism capable of storing substrates 1 for one frame, such as movable roll mechanism, is installed between a plurality of reaction chambers for film formation. The movable roll mechanism consists of, e.g. two carrying rolls 4 and a movable roll 5. Thereby the opening time of each reaction chamber can be shifted and mutual diffusion of reaction gas can be restrained, so that the conventional evacuation time for preventing mutual diffusion is made unnecessary. As a result, the tact time can be reduced by 17-20%. In a roll to roll film forming system which continuously forms a film while moving a substrate, mutual diffusion of reaction gas between reaction chambers is restrained and film quality is improved, by installing a valve mechanism 55 with a roll between the reaction chambers in which mechanism a movable roll mechanism 54 and gate valves 20 are combined.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式