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21. 发明专利

JP2004255479A ELECTROCHEMICAL MACHINING METHOD AND ELECTROCHEMICAL MACHINING DEVICE 审中-公开
公开(公告)号：JP2004255479A
公开(公告)日：2004-09-16
申请号：JP2003046491
申请日：2003-02-24
申请人： EBARA CORP
发明人： YASUDA HOZUMI , IIIZUMI TAKESHI , OBATA ITSUKI , SAITO TAKAYUKI , SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI
IPC分类号： B23H3/00
摘要： PROBLEM TO BE SOLVED: To provide an electrochemical machining method and an electrochemical machining device which restrict stay and adhesion of materials in a worked surface after the machining. SOLUTION: In this electrochemical machining method, a working electrode 86a and a feeder electrode 86b for feeding electricity to a work W are arranged, and voltage is applied between the working electrode and the feeder electrode, and contact members 90 and 96 are interposed between the working electrode and the work, and the work W is brought in contact with the working electrode 82 or arranged close to the working electrode 82, and the work and the working electrode are relatively moved to perform electrochemical machining to a surface of the work. After the predetermined quantity of electrochemical machining is performed to the surface of the work, applying of the voltage between the working electrode and the feeder electrode is stopped, and after relatively moving the working electrode 82 and the work W in relation to each other for a certain time, the work W is separated from the working electrode 82. COPYRIGHT: (C)2004,JPO&NCIPI

22. 发明专利

JP2004250776A Substrate treatment apparatus and method 有权
公开(公告)号：JP2004250776A
公开(公告)日：2004-09-09
申请号：JP2003118686
申请日：2003-04-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KUMEGAWA MASAYUKI , OBATA ITSUKI
IPC分类号： C25D7/12 , C25D17/00 , C25D19/00 , C25F3/30 , C25F7/00 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of obtaining good flatness on the surface of a substrate even if microholes and broad trenches coexist on the substrate surface, and to provide a substrate treatment method. SOLUTION: The substrate processor is equipped with a head part 41 which holds the substrate W, a plating processing part 20 which applies electroplating to the substrate W to form a metallic film, a cleaning part 210 which cleans the substrate surface after plating, and an electrolytic working part 30 which has a working electrode and electrolytically removes at least the metallic film on the substrate W by impressing a voltage between the substrate W after cleaning and the working electrode in the presence of the liquid. The head part 41 is made movable among the plating processing part 20, the cleaning part 210, and the electrolytic working part 30 while holding the substrate W. COPYRIGHT: (C)2004,JPO&NCIPI

23. 发明专利

JP2003338490A System and method for processing substrate 有权
标题翻译：用于处理衬底的系统和方法
公开(公告)号：JP2003338490A
公开(公告)日：2003-11-28
申请号：JP2002143725
申请日：2002-05-17
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIRAKASHI MICHIHIKO , YASUDA HOZUMI , KUMEGAWA MASAYUKI , OBATA ITSUKI
IPC分类号： C25F3/00 , C25F7/00 , H01L21/304 , H01L21/306 , H01L21/3063
摘要： PROBLEM TO BE SOLVED: To provide a system and a method for processing a substrate in which a substrate can be processed using an electrochemical machining method such that a conductive material placed on the surface of the substrate is planarized while reducing the load of CMP processing as much as possible and matters adhering to the surface of the substrate can be removed (cleaned).
SOLUTION: The substrate processing system comprising a loading/unloading section 30 for carrying in/carrying out a substrate W, and a power supply section 373 touching the surface of the substrate W on which a film being machined is formed is further provided with an electrochemical machining unit 36 for machining the surface of the substrate W, a unit 48 for removing the film on the surface of the substrate W remaining at a part of the electrochemical machining unit 36 touching the power supply section 373 by etching, a chemical mechanical polishing unit 34 for polishing the surface of the substrate W from which the film is removed, and a robot 32 for carrying the substrate in the substrate processing system.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于处理基板的系统和方法，其中可以使用电化学加工方法来处理基板，使得放置在基板的表面上的导电材料被平坦化，同时减小可以除去（清洗）尽可能多的CMP处理和附着于基板表面的附着物。解决方案：还包括一个基板处理系统，该系统包括用于承载/执行基板W的装载/卸载部分30以及接触其上形成有被加工的薄膜的基板W的表面的电源部分373 具有用于加工基板W的表面的电化学加工单元36，用于去除残留在通过蚀刻接触电源部373的电化学加工单元36的一部分的基板W的表面上的膜的单元48，机械抛光单元34，用于抛光除去膜的基板W的表面;以及用于在基板处理系统中承载基板的机器人32。版权所有（C）2004，JPO

24. 发明专利

JP2003213500A SUBSTRATE TREATMENT DEVICE AND METHOD 审中-公开
公开(公告)号：JP2003213500A
公开(公告)日：2003-07-30
申请号：JP2002014132
申请日：2002-01-23
申请人： EBARA CORP
发明人： SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , YASUDA HOZUMI , OBATA ITSUKI
IPC分类号： C25F7/00 , C23F1/00 , C23F1/08 , C25F3/00 , C25F3/30 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device capable of simplifying removal of a film on a substrate peripheral edge part and reliably removing the film. SOLUTION: This substrate treatment device has a film removing device 11 capable of removing the film on a substrate surface WA simultaneously by the predetermined thickness over the entire surface regarding a substrate W which is film-deposited so as to be stepped between the substrate peripheral edge part of the substrate surface WA and a substrate device effective part. The substrate treatment device may be an electro-chemical machining device. Regarding the substrate which is film-deposited so as to be stepped between the substrate peripheral edge part on the substrate surface and the substrate device effective part, the film on the substrate surface can be simultaneously removed by the predetermined thickness over the entire surface, and a film removing treatment can be easily performed, in which the film on the substrate peripheral edge part can be reliably removed, and the film is remained on the substrate device effective part. COPYRIGHT: (C)2003,JPO

25. 发明专利

JP2003205427A ELECTRO-CHEMICAL MACHINING METHOD, AND APPARATUS 审中-公开
公开(公告)号：JP2003205427A
公开(公告)日：2003-07-22
申请号：JP2002000838
申请日：2002-01-07
申请人： EBARA CORP
发明人： SAITO TAKAYUKI , SUZUKI TSUKURU , MAKITA YUJI , YAMADA KAORU , SHIRAKASHI MICHIHIKO , TAIMA YASUSHI , OBATA ITSUKI , KUMEGAWA MASAYUKI , YASUDA HOZUMI
IPC分类号： B23H3/00 , B23H3/08 , B23H3/10 , C25F3/12 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To provide an electro-chemical machining method, and an apparatus therefor in which a ruthenium film is removed by the electro-chemical effect in an ultrapure water or a dilute solution. SOLUTION: The ruthenium film as an anode and an electro-chemical machining electrode 22 as a cathode are disposed with a predetermined interval therebetween, an ion exchanger 24 is disposed between the ruthenium film and the electro-chemical machining electrode 22, the voltage is applied between the ruthenium film and the electro-chemical machining electrode 22 while feeding the liquid 14 between the ruthenium film and the electro-chemical machining electrode 22, and the ruthenium film and the electro-chemical machining electrode 22 are put into relative motion. COPYRIGHT: (C)2003,JPO

26. 发明专利

JP2001049499A PLATING DEVICE 失效
公开(公告)号：JP2001049499A
公开(公告)日：2001-02-20
申请号：JP22889999
申请日：1999-08-12
申请人： EBARA CORP
发明人： SASABE KENICHI , HONGO AKIHISA , SENDAI SATOSHI , TOMIOKA MASAYA , TSUDA KATSUMI , KUMEGAWA MASAYUKI
IPC分类号： H01L21/768 , C25D7/12 , C25D17/00 , C25D21/10 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating device to set the uniform and sufficiently large relative speed between a surface to be plated of a substrate and a plating solution over a whole area of the surface to be plated of the substrate. SOLUTION: This plating device comprises a cylindrical plating tank 12 to maintain a plating solution 10, a substrate holding part 14 to hold a substrate W in an attachable/detachable manner and horizontally hold the substrate so that a lower surface to be plate of the substrate W is brought into contact with the plating solution 10 in the plating tank 12, a relative speed generating means 38 to generate the variable relative speed between the substrate W held by the substrate holding part 14 and the plating solution 10, and a control part 52a to control the relative speed generating means 38.

27. 发明专利

JP2001049489A PLATING DEVICE 失效
公开(公告)号：JP2001049489A
公开(公告)日：2001-02-20
申请号：JP22889799
申请日：1999-08-12
申请人： EBARA CORP
发明人： SASABE KENICHI , HONGO AKIHISA , SENDAI SATOSHI , TOMIOKA MASAYA , TSUDA KATSUMI , KUMEGAWA MASAYUKI
IPC分类号： C25D5/08 , C25D5/04 , C25D7/12 , C25D17/00 , C25D17/10 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating device to form a uniform plating film by smoothly feeding a jet of a plating solution ejected from a plating solution ejection pipe to a surface to be plated of a substrate, and implementing the uniform electrolysis on the surface to be plated. SOLUTION: This plating device comprises a cylindrical plating tank 12 to maintain a plating solution 10, a plating solution ejection pipe 18 which is connected to a center of a bottom part of the plating tank 12 to form a jet of the plating solution directed upward, a substrate holding part 14 to hold a substrate W in an attachable/detachable manner and to arrange the surface to be plated of a lower side of the substrate so as to be brought into contact with the jet of the plating solution 10, and an anode plate 16 arranged in the plating solution 10 in the plating tank 12. A flow straightening guide 32 which is expanded in a trumpet shape and extended upward along the streamline of the jet of the plating solution from an upper end of the plating solution ejection pipe 18 is arranged inside the plating tank 12.

28. 发明专利

JP2001024307A PLATING EQUIPMENT 失效
公开(公告)号：JP2001024307A
公开(公告)日：2001-01-26
申请号：JP19491999
申请日：1999-07-08
申请人： EBARA CORP
发明人： SASABE KENICHI , HONGO AKIHISA , SENDAI SATOSHI , TOMIOKA MASAYA , TSUDA KATSUMI , KUMEGAWA MASAYUKI
IPC分类号： H05K3/18 , C25D7/12
摘要： PROBLEM TO BE SOLVED: To provide plating equipment which uses a soluble anode and can prevent a decline in plating quality by particles resulting from a black film, etc. SOLUTION: Plating equipment plates, the surfaces of which are to be plated of a substrate by conducting electricity between an anode 30 set up in a plating tank 10 and a substrate W, while a plating solution made to flow in the tank 10 from a solution jetting pipe 35 is jetted upon the surface to be plated. The tank 10 has a flowing-out port 11, through which part of the plating solution flowing in the plating tank 10, is made to flow out of the tank 10 from the periphery of the anode 30 (or a through-hole of the anode 30).

29. 发明专利

JP2010064196A Substrate polishing device and substrate polishing method 审中-公开
标题翻译：基板抛光装置和基板抛光方法
公开(公告)号：JP2010064196A
公开(公告)日：2010-03-25
申请号：JP2008233466
申请日：2008-09-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KUMEGAWA MASAYUKI , YOKOYAMA TOSHIO
IPC分类号： B24B37/00 , B24B37/005 , B24B37/10 , B24B53/017
摘要： PROBLEM TO BE SOLVED: To provide a substrate polishing device which can uniformly polish a rectangular large-sized substrate such as a large-sized glass substrate at a high degree of flatness, can make the whole device compact (small size), and has favorable maintainability. SOLUTION: The substrate polishing device includes: a substrate holding mechanism 3 having a substrate rotating stage 31 rotated while holding the rectangular substrate G with its polishing surface in an upward direction; a polishing head mechanism 4 having a polishing head 41 rotating while holding a polishing tool 10 having a polishing surface smaller than a polishing object surface of the substrate G and pressing the polishing tool 10 to the polishing object surface of the substrate G; and a moving mechanism 5 for horizontally reciprocating the polishing head 41 while supporting the polishing head 41. The polishing tool 10 is rotated while rotating the substrate G, and the substrate G is polished by reciprocating the polishing tool 10 between the center section of the substrate G and an outer peripheral end of the substrate G while the polishing tool 10 is pressed to the substrate G. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了提供能够以高度的平坦度均匀地研磨诸如大尺寸玻璃基板的矩形大尺寸基板的基板研磨装置，能够使整个装置紧凑（小尺寸），并具有良好的可维护性。基板研磨装置包括：基板保持机构3，其具有基板旋转台31旋转，同时将矩形基板G的抛光表面沿向上方向保持; 抛光头机构4，其具有在保持具有小于基板G的抛光对象表面的抛光表面的抛光工具10并且将抛光工具10按压到基板G的抛光对象表面的同时旋转的抛光头41; 以及用于在支撑抛光头41的同时使抛光头41水平往复运动的移动机构5.抛光工具10在旋转基板G的同时旋转，并且基板G通过使抛光工具10在基板的中心部分之间往复运动而被抛光 G和基板G的外周端，而抛光工具10被压到基板G上。（C）2010，JPO＆INPIT

30. 发明专利

JP2007050506A Apparatus for electrochemical machining 审中-公开
标题翻译：电化学加工设备
公开(公告)号：JP2007050506A
公开(公告)日：2007-03-01
申请号：JP2006219808
申请日：2006-08-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KUMEGAWA MASAYUKI , KIMURA NORIO , FUKUNAGA YUKIO , MUTSUHIRA KATSUYUKI
IPC分类号： B23H3/00 , B23H3/04 , B23H3/10
CPC分类号： C25D17/001 , C25D17/002 , C25D17/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for electrochemical machining, which apparatus can flatten the surface of a metallic film at a low machining pressure, the metallic film being arranged on a substrate and having minute undulations, and further can machine the metallic film at a uniform machining speed over the whole area of the metallic film.
SOLUTION: The apparatus for electrochemical machining comprises a current supplying electrode 31 and a machining electrode 32, a substrate carrier 11 for holding the substrate W, a first supply passage 51 for supplying a first electrolytic solution between the current supplying electrode 31 and the substrate W, a second supply passage 52 for supplying a second electrolytic solution between the machining electrode 32 and the substrate W, an insulating body 36 for electrically insulating the first electrolytic solution and the second electrolytic solution, a table 12 on which the current supplying electrode 31, the machining electrode 32, and the insulating body 36 are arranged, an electric power source 33 for applying electric voltage between the current supplying electrode 31 and the machining electrode 32, and a relative motion mechanism 17 for relatively moving the table 12 and the substrate carrier 11 in the state that the insulating body 36 is brought into contact with the metallic film 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于电化学加工的装置，该装置可以在低加工压力下使金属膜的表面平坦化，金属膜布置在基板上并且具有微小的起伏，并且还可以加工金属膜在金属膜的整个区域上以均匀的加工速度。解决方案：用于电化学加工的装置包括供电电极31和加工电极32，用于保持基板W的基板载体11，用于在供电电极31和供电电极31之间提供第一电解液的第一供应通道51 基板W，用于在加工电极32和基板W之间供给第二电解液的第二供给通路52，将第一电解液和第二电解液电绝缘的绝缘体36，供给电流布置电极31，加工电极32和绝缘体36，用于在供电电极31和加工电极32之间施加电压的电源33和用于相对移动台12的相对运动机构17和基板载体11处于绝缘体36与金属接触的状态版权所有（C）2007，JPO＆INPIT

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