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    • 24. 发明专利
    • Method for manufacturing wafer with few surface defects, wafer obtained by said method, and electronic component made of the wafer
    • 用于制造具有较少表面缺陷的波形的方法,由该方法获得的波形和该波形的电子元件
    • JP2005260225A
    • 2005-09-22
    • JP2005055622
    • 2005-03-01
    • Schott Agショット アーゲーSchott AG
    • BLAUM PETERSPEIT BURKHARDKOEHLER INGORUDINGER BERNDBEIER WOLFRAM
    • B24B1/00B24B37/04H01L21/304H01S5/02
    • B24B37/30B24B37/042
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing wafer substrates, which allows semiconductor components of which semiconductor layers have low-level defects at most and which have no pits especially on their surfaces.
      SOLUTION: A method for manufacturing wafer substrates comprises: a process (a) of polishing at least one of active surfaces, which is to be coated, of a wafer by using a polishing means including polishing components in order to smooth the at least one of the active surfaces; and a process (b) of changing the polishing direction of a polishing tool which polishes the at least one of the active surfaces so that each area or each position of the at least one of the active surfaces is uniformly polished by polishing action of the polishing tool which covers 360° statistically during polishing operation. To eliminate almost all of the surface defects on the at least one of the active surfaces, the at least one of the active surfaces is coated.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种制造晶片基板的方法,其允许半导体层最多具有低水平缺陷并且其表面上没有凹坑的半导体元件。 解决方案:一种用于制造晶片衬底的方法包括:通过使用包括抛光组分的抛光装置来抛光晶片的待涂覆的活性表面中的至少一个的工艺(a),以使光滑 至少一个活动表面; 以及改变研磨工具的抛光方向的方法(b),抛光工具抛光至少一个活性表面,使得至少一个活性表面的每个区域或每个位置通过抛光的抛光作用被均匀抛光 在抛光操作期间统计地覆盖360°的工具。 为了消除至少一个活性表面上的几乎所有的表面缺陷,至少一个活性表面被涂覆。 版权所有(C)2005,JPO&NCIPI
    • 26. 发明专利
    • METHOD FOR MANUFACTURING LARGE-VOLUME CaF2 SINGLE CRYSTAL FOR OPTICAL ELEMENT WITH OPTICAL AXIS PARALLEL TO (100)-CRYSTAL AXIS OR (110)-CRYSTAL AXIS, AND CaF2 SINGLE CRYSTAL MANUFACTURED BY THE METHOD
    • 用于与(100)晶轴或(110) - 晶轴的光轴平行的光学元件制造大容量CaF 2单晶的方法,以及通过该方法制造的CaF 2单晶
    • JP2005239543A
    • 2005-09-08
    • JP2005047090
    • 2005-02-23
    • Schott Agショット アーゲーSchott AG
    • STAEBLEIN JOERGPARTHIER LUTZ
    • G02B1/02C30B29/12C30B33/00C30B33/02G02B5/30
    • C30B33/00C30B29/12Y10T117/1008Y10T117/1016Y10T117/1024
    • PROBLEM TO BE SOLVED: To provide a method for tempering to obtain a single crystal having excellent optical characteristics such as refractive index uniformity or stress birefringence in a (100) or (110) direction of the single crystal and free from stress in the manufacture of a calcium fluoride single crystal to be used for microlithography at short wavelength of ≤250 nm, preferably ≤193 nm, and to provide a calcium fluoride crystal and an integrated circuit and an electronic device using the above crystal. SOLUTION: The method includes, for the purpose of tempering a crystal, steps of: (a) heating the crystal to 1,000°C to 1,350°C at less than 18 K/h heating rate; (b) holding the crystal at the heating temperature of the step (a) for at least 65 hours to control the temperature difference in the crystal to maximum 0.2K; (c) cooling the crystal to a temperature range above a limiting temperature between 900°C and 600°C at maximum 0.5 K/h cooling rate; and (d) cooling the crystal at maximum 3 K/h cooling rate to a temperature further below the above temperature range. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种回火方法,以获得具有优异的光学特性如单晶的(100)或(110)方向的折射率均匀性或应力双折射并且没有应力的单晶 在短波长≤250nm,优选≤193nm下用于微光刻的氟化钙单晶的制造,以及提供氟化钙晶体和集成电路以及使用上述晶体的电子器件。 解决方案:为了回火晶体,该方法包括以下步骤:(a)以小于18K / h的加热速率将晶体加热至1,000℃至1350℃; (b)将晶体在步骤(a)的加热温度下保持至少65小时以将晶体中的温度差控制在最大值0.2K; (c)以最高0.5K / h的冷却速度将晶体冷却至高于900℃至600℃的极限温度的温度范围; 和(d)以最高3K / h的冷却速度将晶体冷却至进一步低于上述温度范围的温度。 版权所有(C)2005,JPO&NCIPI
    • 27. 发明专利
    • Method for producing low stress non-(111) oriented large volume crystal with reduced stress birefringence and homogenous refractive index, and crystal produced by the same
    • 用于生产低应力非(111)方向的大容量晶体的方法,具有减少的应力双相和均匀折射率,以及由其生产的晶体
    • JP2005239542A
    • 2005-09-08
    • JP2005047083
    • 2005-02-23
    • Schott Agショット アーゲーSchott AG
    • PARTHIER LUTZSTAEBLEIN JOERGWEHRHAN GUNTHERKUSCH CHRISTIAN
    • C30B33/02C30B29/12C30B33/00G02B5/30G03F7/20
    • G03F7/70958C30B29/12C30B33/00G02B5/3083
    • PROBLEM TO BE SOLVED: To produce a crystal having an optical component direction different from (111), in particular, (100) or (110) component direction, and optical quality satisfying current requisites in microlithography at 193 nm or wavelengths shorter than 193 nm by performing tempering at a high temperature in an appropriate oven and/or an apparatus suitable for tempering.
      SOLUTION: The method for producing the crystal having a sliding surface with reduced stress birefringence and more homogeneous refractive index, especially the non-(111) oriented low stress, large volume crystal is constituted of a process for growing and tempering the crystal while forming a temperature gradient by performing heating and/or cooling for alleviating stress occurring along the sliding surface. In the tempering, the heating and/or cooling is performed by heat propagation toward a direction of heat propagation. The direction of heat propagation or the temperature gradient is directed at an angle of ≥5° with respect to the sliding surface.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了制造具有不同于(111),特别是(100)或(110)分量方向的光学分量方向的晶体,并且在193nm或更短的波长的微光刻中满足当前要求的光学质量 在适当的炉子和/或适于回火的设备中通过在高温下进行回火而超过193nm。 解决方案:具有应力双折射降低和折射率更均匀的滑动面的晶体的制造方法,特别是非(111)取向的低应力,大体积的晶体由用于生长和回火晶体的方法 同时通过进行加热和/或冷却来减轻沿着滑动面发生的应力而形成温度梯度。 在回火中,通过向热传播方向的热传播来进行加热和/或冷却。 热传播的方向或温度梯度相对于滑动面指向≥5°的角度。 版权所有(C)2005,JPO&NCIPI