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11. 发明专利

KR20210027511A KR20210027511A - Selective silicon germanium epitaxy method at low temperatures 审中-公开
公开(公告)号：KR20210027511A
公开(公告)日：2021-03-10
申请号：KR1020217006038A
申请日：2019-07-15
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 이-차우 후앙 , 후아 청
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/324 , H01L21/67 , H01L29/66
CPC分类号： H01L21/02271 , C23C16/04 , C23C16/24 , C23C16/42 , C23C16/455 , C23C16/45523 , C23C16/56 , C30B25/02 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02293 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/30604 , H01L21/3065 , H01L21/31116 , H01L21/324 , H01L21/67017 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68792 , H01L29/66795 , H01L2924/10271
摘要： 실시예에서, 기판 상에 규소 게르마늄 물질을 선택적으로 증착시키는 방법이 제공된다. 방법은 기판을 기판 처리 챔버 내에 위치시키는 단계 - 기판은 기판 상에 유전체 물질 및 규소 함유 단결정을 가짐 -; 기판을 약 450 ℃ 이하의 온도로 유지하는 단계; 규소 공급원 가스, 게르마늄 공급원 가스, 식각제 가스, 캐리어 가스 및 적어도 하나의 도펀트 공급원 가스를 포함하는 프로세스 가스에 기판을 노출시키는 단계; 및 제1 규소 게르마늄 물질을 기판 상에 에피택셜 및 선택적으로 증착시키는 단계를 포함한다.

12. 发明专利

JP2017511294A ドープト希土類窒化物材料および同材料を含むデバイス审中-公开
公开(公告)号：JP2017511294A
公开(公告)日：2017-04-20
申请号：JP2016560766
申请日：2015-03-31
申请人：フランクナタリ , フランクナタリ , ベンジャミンジョンルック , ベンジャミンジョンルック , ハリージョセフトロダール , ハリージョセフトロダール , ステファンアンジュベツィアン , ステファンアンジュベツィアン
发明人：フランクナタリ , フランクナタリ , ベンジャミンジョンルック , ベンジャミンジョンルック , ハリージョセフトロダール , ハリージョセフトロダール , ステファンアンジュベツィアン , ステファンアンジュベツィアン
IPC分类号： C01B21/06 , C23C14/06 , H01L21/363
CPC分类号： C30B23/066 , C23C14/0641 , C23C14/28 , C30B23/02 , C30B23/025 , C30B25/02 , C30B29/38 , H01L21/02192 , H01L21/02269 , H01L21/02293 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02439 , H01L21/02521 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/24
摘要：半絶縁性または絶縁性のものもある、マグネシウムドープト希土類窒化物材料が本明細書において開示される。また、材料を作製するための方法も開示される。マグネシウムドープト希土類窒化物材料が、例えば、スピントロニクス、電子デバイスおよび光電子デバイスの製造において有用である場合がある。

13. 发明专利

JP2012060063A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012060063A
公开(公告)日：2012-03-22
申请号：JP2010204412
申请日：2010-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TAKAYUKI
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/02178 , H01L21/0228 , H01L21/02293 , H01L21/28017 , H01L21/28194 , H01L21/32115 , H01L29/513 , H01L29/517 , H01L29/66734
摘要： PROBLEM TO BE SOLVED: To provide a trench-gate-type semiconductor device having high flatness of a gate electrode, with a high-dielectric film as a gate insulating film.SOLUTION: A semiconductor device comprises a semiconductor layer 1 of a first conductive type, a first semiconductor layer 2 of a first conductive type, and a second semiconductor layer 3 of a second conductive type. An oxide film 5 containing at least any of aluminium and yttrium covers the second semiconductor layer 3 exposed on the sidewalls of a trench that penetrates through the second semiconductor layer 3 and reaches the inside of the first semiconductor layer 2. A protective layer 6 is formed on the oxide layer 5 while facing the second semiconductor layer 3. A gate insulating film 7 is constituted from the oxide film 5 and the protective layer 6. A gate electrode 8 composed of n-type polysilicon is embedded in the trench while directly bonded to the gate insulating film 7. Third semiconductor layers 10 of a first conductive type contacting the gate insulating film 7 are selectively disposed on the surface of the second semiconductor layer 3.
摘要翻译：要解决的问题：提供具有高电平的栅电极的沟槽栅型半导体器件，其中高介电膜作为栅极绝缘膜。解决方案：半导体器件包括第一导电类型的半导体层1，第一导电类型的第一半导体层2和第二导电类型的第二半导体层3。含有铝和钇中的至少一种的氧化物膜5覆盖暴露在穿过第二半导体层3并到达第一半导体层2的内部的沟槽的侧壁上的第二半导体层3。形成保护层6 在氧化物层5上面对第二半导体层3.栅极绝缘膜7由氧化物膜5和保护层6构成。由n型多晶硅构成的栅电极8嵌入沟槽中，同时直接粘合到栅极绝缘膜7.选择性地将第一导电类型的与栅绝缘膜7接触的第三半导体层10设置在第二半导体层3的表面上。（C）2012，JPO＆INPIT

14. 发明专利

JP2004179617A Insulating film and electronic element 有权
公开(公告)号：JP2004179617A
公开(公告)日：2004-06-24
申请号：JP2003197808
申请日：2003-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU TATSUO , SATAKE HIDEKI
IPC分类号： H01L27/04 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/822 , H01L29/12 , H01L29/15 , H01L29/51 , H01L29/78 , H01L29/786
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide an insulating film with high dielectric constant and small leakage current, and an electronic element using the same. SOLUTION: A first insulating film is provided with a first barrier layer comprising a material having a first band gap and a first dielectric constant; a well layer provided on the first barrier layer and comprising the material having a second band gap smaller than the first band gap and a second dielectric constant larger than the first dielectric constant; and a second barrier layer provided on the well layer and comprising the material having a third band gap larger than the second band gap and a third dielectric constant smaller than the second dielectric constant. Discrete levels due to quantum effect are formed in the well layer. COPYRIGHT: (C)2004,JPO

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