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11. 发明专利

JPH09213621A COATING FILM FORMING METHOD AND ITS EQUIPMENT 失效
公开(公告)号：JPH09213621A
公开(公告)日：1997-08-15
申请号：JP3902696
申请日：1996-02-01
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , NISHIKIDO SHUICHI , KONISHI NOBUO
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce the amount of using coating liquid, and make the thickness of a coating film uniform. SOLUTION: Solvent B of resist liquid A is supplied to the surface of a semiconductor wafer W which is horizontally rotated by a spin chuck 51, from a solvent supply nozzle 60. The solvent B is diffused on the whole surface of the semiconductor wafer W, and the resist liquid is dripped on the wafer W surface from a resist liquid supply nozzle 61. When the resist liquid is made to follow the solvent and diffused, a process space 57 is isolated from the outside air, and mist type solvent is supplied to the inside of the process space 57. Thereby evaporation of the solvent in the resist liquid is restricted, and the resist liquid is made to uniformly reach the peripheral part of the semiconductor wafer W, so that the amount of using the resist liquid can be reduced.

12. 发明专利

JPH0497831A JOINTING STRUCTURE OF HOSE 失效
公开(公告)号：JPH0497831A
公开(公告)日：1992-03-30
申请号：JP21683590
申请日：1990-08-16
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , ORII TAKEHIKO
IPC分类号： G03F7/16 , B29C65/68 , F16L33/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To apply a component force to a hose in a press-contacting direction, prevent smear and oil leak and improve yield of product, by a method wherein the side face opposite to the end face side of a hose at a swollen out part is made into a slope, end faces of the hoses are butted against each other, which is covered with a heat- shrinkable tube. CONSTITUTION:When a heat-shrinkable tube 48 is heated and shrunk, the tube 48 is stuck to an external circumference of a joint part of a hose 46 and coming-off of the hose 46 is prevented due to existence of a swollen-out part 50. Then when shrinkage force toward a shaft center direction A of the hose 46 of the heat-shrinkable tube 48 is applied to a slope 54 of the swollen-out part 50, the slope 54 is caused to generate a component force B working the shrinkage force of the slope 54 in a press-contacting direction of the mutual end faces and the end faces 52 are stuck close to each other. The press-contacting force between the end faces 52 is concentrated and a degree of adhesion is improved, smear and oil leak of a liquid resist are prevented reliably, by a method wherein an annular protrusion formed on the one side end face 52 is caused to abut with the other end face 52. Then deterioration of the liquid resist by a well and adhesion by the smear are eliminated, yield of product is improved and a reduction of a production cost becomes possible.

13. 发明专利

JPH11224849A DEVELOPMENT PROCESSING METHOD 失效
公开(公告)号：JPH11224849A
公开(公告)日：1999-08-17
申请号：JP3814798
申请日：1998-02-04
申请人： TOKYO ELECTRON LTD
发明人： TOSHIMA TAKAYUKI , KONISHI NOBUO
IPC分类号： G03F7/30 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a uniform developing process in a substrate surface, when a developer liquid supplied to the substrate surface is developed. SOLUTION: An electrolysis unit 3 is provided on the surface of a wafer W held by a wafer-holding part 21, and 1.19-1.59 vol.% TMAH aqueous solution (developer solution), for example, is supplied from the upper side of the unit. When electrolysis is started thereafter, a negative ion of the developer solution moves from an anode chamber 33 far from the wafer W to a cathode chamber 34 near the wafer W via an ion-exchange membrane 32 of the unit 3 to raise concentration alkaline component of the developer liquid in the cathode chamber 34, so that the concentration of TMAH aqueous solution of the cathode chamber 34 comes to about 2.38 vol.% for starting development. Since development does not proceed, when the developer liquid is supplied to the surface of wafer W while it proceeds, when the concentration of developer liquid is raised by electrolysis, uniform developing process is obtained even if there is deviation in time at supplying of developer liquid.

14. 发明专利

JPH11176789A WASHING SYSTEM 失效
公开(公告)号：JPH11176789A
公开(公告)日：1999-07-02
申请号：JP36355197
申请日：1997-12-15
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO , SEKIGUCHI KENJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To make the overall cleaning system small and to reduce the cleaning processing time when the front side and the rear side of a substrate such as a semiconductor wafer are cleaned. SOLUTION: A circumferential ridge of a wafer W is supported by an upper support formed to an upper rotary body 2 and a lower support formed to a lower rotary body 3 by pressing the wafer W from both the upper and the lower sides, the torque of a motor 44 placed at the outside of the lower rotary body 3 is delivered the lower rotary body 3 via a belt 45 for driving the rotary bodies 2, 3 around a vertical shaft. Cleaning brushes 51, 52 that clean the front side and the rear side of the wafer W and nozzles 61, 62 that supply a cleaning liquid to the front side and the rear side of the wafer W are provided. Sliding the wafer W and the cleaning brushes 51, 52 at the same time clean both the front side and the rear side of the wafer W. Since two cleaning parts and inverting parts required for a conventional system becomes unnecessary the overall system is made small in size and the number of processes of the system is reduced, so that the processing time is shortened.

15. 发明专利

JPH11168041A METHOD FOR FORMING RESIST FILM 失效
公开(公告)号：JPH11168041A
公开(公告)日：1999-06-22
申请号：JP35237197
申请日：1997-12-04
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO
IPC分类号： H01L21/027 , G03F7/16 , G03F7/26
摘要： PROBLEM TO BE SOLVED: To reduce the thickness of a resist film to 0.5 μm by forming the resist film on a substrate and then removing the surface of the resist film. SOLUTION: A chemically amplified resist film 3 is formed on a substrate 2, for example, by a spin coating method, is coated with an acid solution on the surface, and then is heated. The resist film 3 is used which has such a characteristics that when the resist film is heated in the presence of an acid component, the acid component is diffused to make the resist film soluble in alkali solution by acid catalysis. Therefore, a surface 31 of the resist film 3 is removed by heating the substrate 2 followed by the application of an alkali solution to the surface of the resist film 3.

16. 发明专利

JPH09213625A COATING PROCESSING APPARATUS 失效
公开(公告)号：JPH09213625A
公开(公告)日：1997-08-15
申请号：JP4207996
申请日：1996-02-05
申请人： TOKYO ELECTRON LTD
发明人： YOSHIOKA KAZUTOSHI , KONISHI NOBUO , TOSHIMA TAKAYUKI
IPC分类号： G03F7/16 , B05C11/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enable improving maintenance performance of coating liquid and forming coating films different in thikness of a large caliber object to be treated. SOLUTION: A resist liquid supply nozzle 23 supplying resist liquid A to the surface of a semiconductor wafer W which is rotated and held by a spin chuck 22, and a resist tank 25 as a resist liquid supply source are connected by using a supply tube path 24. A high viscosity adjustment equipment 26 as a viscosity adjustment means for adjusting the viscosity of the resist liquid A is interposed in the supply tube path. Then the resist liquid A can be adjusted to be a specified viscosity by the high viscosity adjustment equipment 26 and is supplied to the surface of the semiconductor wafer W. The coating film thickness can be made a specified value.

17. 发明专利

JP2513992B2 失效
公开(公告)号：JP2513992B2
公开(公告)日：1996-07-10
申请号：JP3449895
申请日：1995-01-30
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , TOSHIMA TAKAYUKI , IIMURO SHUNICHI , OOMORI TSUTAE
IPC分类号： B05D1/40 , B05C11/08 , G03F7/16 , H01L21/027

18. 发明专利

JPH04282821A ALIGNMENT EVALUATING PATTERN SHAPE AND EVALUATING METHOD FOR ALIGNMENT 失效
公开(公告)号：JPH04282821A
公开(公告)日：1992-10-07
申请号：JP6926991
申请日：1991-03-09
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , ORII TAKEHIKO , TOSHIMA TAKAYUKI
IPC分类号： G03F9/00 , H01L21/027
摘要： PURPOSE:To eliminate superposition of upper and lower alignment evaluation patterns so as to measured upto a critical limit of a scanning election microscope. CONSTITUTION:In a pattern shape for evaluating an alignment between a first pattern formed on an element 10 to be treated and a second pattern laminated on the first pattern, any one of a first alignment evaluating pattern 15 and a second alignment evaluating pattern made of photoresist is disposed in the other pattern to be disposed so that both the patterns 15, 17 are not superposed, and can be measured up to a capacity limit of a scanning electron microscope.

19. 发明专利

JPH01140625A POSITIONAL ALIGNMENT METHOD FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH01140625A
公开(公告)日：1989-06-01
申请号：JP29866987
申请日：1987-11-26
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
摘要： PURPOSE:To enable highly exact positional alignment, by making only the resist film formed on an alignment pattern highly transparent. CONSTITUTION:By reading the alignment pattern 5 of a semiconductor wafer 7, which pattern is stuck on a resist film 8, the semiconductor wafer 7 is subjected to alignment according to this pattern information. The transparency of a resist film 8 formed on the alignment pattern 5 only is made comparatively high. By exposing preliminarily the resist film 8 on the alignment pattern 5, resist is hardened, transparency is increased, and recognition of the alignment pattern 5 is facilitated. Thereby enabling highly exact positional alignment.

20. 发明专利

JPS648630A CLEANING METHOD 失效
公开(公告)号：JPS648630A
公开(公告)日：1989-01-12
申请号：JP16474187
申请日：1987-06-30
申请人： TOKYO ELECTRON LTD
发明人： AMAMIYA YUTAKA , IIMURO SHUNICHI , KONISHI NOBUO , KURONO YOICHI
IPC分类号： B08B3/02 , H01L21/304
摘要： PURPOSE:To prevent a static electricity from generating due to a collision when cleaning fluid is injected to a matter to be cleaned or a friction of air by dissolving ozone in water, and cleaning the matter to perform oxidative destruction of organic materials, on the matter to be cleaned. CONSTITUTION:An upper chamber 1 is raised, a semiconductor wafer 11 is conveyed into a cleaning chamber, supported fixedly on an induction motor 10, and the chamber 1 is moved down to be connected to a lower chamber 2. The chamber is sealed in this state. Then, pure water is introduced by a pure water inlet tube 5 into a bubbler tank 4, ozone is introduced by an ozone inlet tube 6 which is arrived at the bottom of the tank 4 through the upper face of the tank 4, bubbled in the tank 4 to dissolve the ozone in the water. Cleaning fluid formed by the dissolving is injected through a supply tube by a high pressure pump 7 from a high pressure nozzle 3 provided at the center of the upper face of the chamber 1 on a semiconductor wafer 11 which is, for example, rotated at 1000rpm by the motor 10. Thus, organic materials on the wafer 11 is subjected to oxidative destruction.

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