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11. 发明专利

JPS61164226A WASHING DEVICE FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS61164226A
公开(公告)日：1986-07-24
申请号：JP494285
申请日：1985-01-17
申请人： TOSHIBA CERAMICS CO
发明人： KIRINO YOSHIO , TAKAI NORIHEI , FUSHII KUNIHIKO , IWASAKI KIMITOSHI
IPC分类号： B08B3/10 , H01L21/304
摘要： PURPOSE:To improve remarkably washing efficiency without quite apprehension of reverse pollution by a method wherein a wafer is washed floating in medical fluid inside a treating tub. CONSTITUTION:Medical fluid 1 is circulated through a pump 9. A wafer W is subjected to float affording reaction force by controlling flow of the medical fluid L blown out of a blow-out aperture 12a-12d, moreover, floating state of the wafer W is stabilizeds since a part of the medical fluid L blown out is returned to a returning aperture 13a, 14a. Accordingly, the wafer W is washed by the medical fluid L without contact with substance except the medical fluid L. Besides, the wafer W receives moderate swaying work by controlling flow of the medical fluid L, so that washing effect of pollute of the wafer W can be improved.

12. 发明专利

JPS5943436B2 JPS5943436B2 - 失效
公开(公告)号：JPS5943436B2
公开(公告)日：1984-10-22
申请号：JP8871776
申请日：1976-07-27
申请人： Toshiba Ceramics Co
发明人： MORI MASAAKI , TAKAI NORIHEI , OGAWA TAMOTSU
IPC分类号： C04B35/599 , C04B35/10 , C04B35/58

13. 发明专利

JPS5934149B2 JPS5934149B2 - 失效
公开(公告)号：JPS5934149B2
公开(公告)日：1984-08-20
申请号：JP8871976
申请日：1976-07-27
申请人： Toshiba Ceramics Co
发明人： MORI MASAAKI , TAKAI NORIHEI , OGAWA TAMOTSU
IPC分类号： C04B35/599 , C04B35/10 , C04B35/58

14. 发明专利

JPH07165495A SILICON WAFER 失效
公开(公告)号：JPH07165495A
公开(公告)日：1995-06-27
申请号：JP23251694
申请日：1994-09-02
申请人： TOSHIBA CERAMICS CO
发明人： SHIRAI HIROSHI , TAKAI NORIHEI , KIRINO YOSHIO , AKAI KENJI , KON TAKESHI , NAKANISHI HIROMITSU
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322 , H01L21/324
摘要： PURPOSE:To obtain a silicon wafer with low crystal defect density. CONSTITUTION:This silicon wafer is such as to have been subjected to heat treatment by staying in a hydrogen gas atmosphere at 1000-1350 deg.C for .

15. 发明专利

JPH06177096A MANUFACTURE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH06177096A
公开(公告)日：1994-06-24
申请号：JP34355992
申请日：1992-12-01
申请人： TOSHIBA CERAMICS CO
发明人： TAKAI NORIHEI , WAKASA YASUO , NISHIMOTO YASUSHI
IPC分类号： H01L21/304
摘要： PURPOSE:To manufacture a semiconductor wafer having uniform and accurate thickness and surface roughness and to suppress an indirect facility cost which does not directly relate to manufacture of the wafer to a low value. CONSTITUTION:A method for manufacturing a semiconductor wafer has the steps of (22) lapping a sliced silicon single crystalline plate W, (23) chemically polishing it, and surface finishing it as prescribed, and comprises the step (24) of surface grinding it instead of the steps 22 and 23. In the step 24, at least two or more stage-grinding wheels are used, only one side of the wafer W is first ground in a predetermined quantity, and the other side is ground in a predetermined quantity after the one side is completely ground to finish grindings on both sides of the wafer.

16. 发明专利

JPH034517B2 失效
公开(公告)号：JPH034517B2
公开(公告)日：1991-01-23
申请号：JP1111582
申请日：1982-01-27
申请人： TOSHIBA CERAMICS CO
发明人： TAKAI NORIHEI , ASANO MASAFUMI
IPC分类号： C30B15/02 , C30B15/04 , C30B15/10 , C30B15/12 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/18 , H01L21/208

17. 发明专利

JPS6259050B2 失效
公开(公告)号：JPS6259050B2
公开(公告)日：1987-12-09
申请号：JP12982182
申请日：1982-07-26
申请人： TOSHIBA CERAMICS CO
发明人： NAGASHIMA HIDEO , TAKAI NORIHEI
IPC分类号： C01B21/068

18. 发明专利

JPS61141696A Production unit for single crystal 失效
标题翻译：单晶生产单位
公开(公告)号：JPS61141696A
公开(公告)日：1986-06-28
申请号：JP26090184
申请日：1984-12-12
申请人： Toshiba Ceramics Co Ltd
发明人： KIRINO YOSHIO , FUSHII KUNIHIKO , TAKAI NORIHEI , MATSUDA MASATO
IPC分类号： C30B15/10 , H01L21/18 , H01L21/208
摘要： PURPOSE: In growing single crystal by crystal pulling method, to raise cooling rate of single crystal immediately after growth, and to prevent occurrence of crystal defects, by integrating a cylindrical crucible to put melt in it with a piston, and making the inner volume of the crucible variable.
CONSTITUTION: The bottom of the cylindrical crucible 4 made of quartz, etc. is engaged with the piston 7. A crystal raw material is put in the cylindrical crucible 4, heated by the heating element 9 into the melt 8. The piston 7 is raised, the surface of the melt 8 is raised to the vicinity of the top of the cylindrical crucible 4, and the single crystal 2 is pulled up by seed crystal set the tip of a pulling shaft. The surface of the melt 8 is always kept in the vicinity of the top of the cylindrical crucible 4 by the action of the piston 7, while the single crystal 2 is being pulled up. Consequently, heat radiation from the inner face of the crucible 4 does not reach the pulled crystal 2, so the single crystal 2 immediately after growing can be quenched.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过晶体拉伸法生长单晶，在生长后立即提高单晶的冷却速度，防止晶体缺陷的发生，通过将圆柱形坩埚整体放入活塞中，使其内部容积坩埚变量。构成：由石英等制成的圆柱形坩埚4的底部与活塞7接合。将晶体原料放入圆筒形坩埚4中，由加热元件9加热到熔体8中。活塞7升高，将熔融物8的表面升高到圆筒状坩埚4的顶部附近，通过设置牵引轴的前端的晶种将单晶2拉起。当单晶2被拉起时，熔体8的表面总是通过活塞7的作用保持在圆柱形坩埚4的顶部附近。因此，来自坩埚4的内表面的热辐射不会到达拉晶体2，因此可以使刚刚生长的单晶2淬火。

19. 发明专利

JPS60247935A MANUFACTURE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS60247935A
公开(公告)日：1985-12-07
申请号：JP10271584
申请日：1984-05-23
申请人： TOSHIBA CERAMICS CO
发明人： TAKAI NORIHEI , NAKANISHI HIROMARU , AKAI KENJI , TAKAHASHI SHIYOUICHI , WATANABE MASAHARU
IPC分类号： H01L21/20 , H01L21/322 , H01L21/324
摘要： PURPOSE:To form defectless layers on the surface of a wafer and microscopic defective layers inside the wafer in an excellent controllable manner by a method wherein a high temperature heat treatment atmosphere of intrinsic gettering is selected. CONSTITUTION:A heat treatment is performed on a silicon wafer 11 at 500- 900 deg.C for 0.5-16hr, and oxygen deposited nuclei 12 are formed. Then, said oxygen deposited nuclei 12 are heat-treated at 1,000 deg.C in hydrogen gas or inert gas containing hydrogen. As a result, defectless layers 13 can be formed on the surface of the wafer 11 and microscopic defective layers 14 can also be formed in the wafer 11.

20. 发明专利

JPS5915114B2 JPS5915114B2 - 失效
公开(公告)号：JPS5915114B2
公开(公告)日：1984-04-07
申请号：JP10559876
申请日：1976-09-03
申请人： Toshiba Ceramics Co
发明人： MORI MASAAKI , TAKAI NORIHEI
IPC分类号： C04B35/64 , C04B35/58 , C04B35/584 , C04B35/599

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