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11. 发明专利

JP2012032823A Method of manufacturing photomask blank and binary mask 有权
标题翻译：制造光电薄膜和二次阴影的方法
公开(公告)号：JP2012032823A
公开(公告)日：2012-02-16
申请号：JP2011205808
申请日：2011-09-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/54 , G03F1/46 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed and to manufacture a mask with higher precision.SOLUTION: A photomask blank comprises: a light shielding film 2 made of a metal or a metal compound which can be etched by fluorine-based dry etching laminated on a transparent substrate 1 through or not through the other film; an antireflection film 3 made of a metal or a metal compound which can be etched by fluorine-based dry etching formed on the light shielding film; and an etching mask film 4 made of a metal or a metal compound having durability against fluorine-based dry etching formed on the antireflection film, and is used as material for a binary mask in photolithography for forming a resist pattern with a width of 0.1 μm or less with light having an exposure wavelength of 250 nm in which the thickness of an etching mask film is 2 to 15 nm.
摘要翻译：要解决的问题：为了减少由于要形成的图案的密度依赖性而导致的图案尺寸的变化并且制造具有更高精度的掩模。解决方案：光掩模坯料包括：由金属或金属化合物制成的遮光膜2，其可以通过或不通过另一膜层压在透明基板1上的通过氟基干蚀刻进行蚀刻; 由金属或金属化合物制成的抗反射膜3，可以通过形成在遮光膜上的氟基干蚀刻进行蚀刻; 以及由抗反射膜形成的耐氟基干蚀刻耐久性的金属或金属化合物制成的蚀刻掩模膜4，作为用于形成宽度为0.1μm的抗蚀剂图案的光刻用二元掩模用材料以下的曝光波长为250nm的光，其中蚀刻掩模膜的厚度为2〜15nm。版权所有（C）2012，JPO＆INPIT

12. 发明专利

JP2009271562A Photomask blank, photomask and fabrication method thereof 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2009271562A
公开(公告)日：2009-11-19
申请号：JP2009191689
申请日：2009-08-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , FUKUSHIMA YUICHI
IPC分类号： G03F1/32 , G03F1/54 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photomask on which a fine photomask pattern is formed with high precision, and to provide a photomask blank for providing the same. SOLUTION: A light-shieldable film 12 is provided on an optical film 15 such as a half-tone phase shift layer formed on one principal plane of an optically transparent substrate 11, and the light-shieldable film 12 is configured by sequentially laminating a first light-shieldable film 13 and a second light-shieldable film 14. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is formed with a layer mainly comprising Cr and having a thickness of 3 to 15 nm. The second light-shieldable film 14 is a film that mainly comprises a silicon-containing compound and that can be etched by F-based dry etching. The first and second light-shieldable film 13 and 14 and the optical film 15 are selected so that the total sum of optical densities becomes 2.5 or more. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种高精度地形成精细光掩模图案的光掩模，并提供用于提供该光掩模图案的光掩模坯料。解决方案：可光屏蔽膜12设置在诸如形成在光学透明基板11的一个主平面上的半色调相移层等光学膜15上，并且可遮光膜12依次配置层叠第一可遮光膜13和第二可遮光膜14.第一可遮光膜13是基本上不被氟基（F系）干蚀刻蚀刻的膜，主要形成有层包含Cr并且具有3至15nm的厚度。第二可遮光膜14是主要包含含硅化合物并且可以通过基于F的干蚀刻进行蚀刻的膜。选择第一和第二可遮光膜13和14以及光学膜15，使得光密度的总和变为2.5以上。版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2007292824A Photomask blank 有权
标题翻译： PHOTOMASK BLANK
公开(公告)号：JP2007292824A
公开(公告)日：2007-11-08
申请号：JP2006117327
申请日：2006-04-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , FUKUSHIMA YUICHI
IPC分类号： C23C14/06 , G03F1/30 , G03F1/32 , G03F1/34 , G03F1/54
CPC分类号： G03F1/58 , G03F1/32 , Y10T428/31616
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank having chemical stability without practical problem in a transition metal silicide less than 80 atom% using silicon/(silicon+transition metal) in an advantageous silicon content as a means giving higher conductivity wherein it is conventionally considered that it is difficult to be used as a preferable silicide compound in a shading film material of the minute photomask needed in lithography exposing by using minute photomask patter, in particular, light of exposure wavelength of 250 nm or less of an ArF excimer laser or the like. SOLUTION: The photomask blank has the shading film composed of a single layer composed of a material containing the transition metal, silicon and nitrogen and a multi-layer containing one or more layers composed of the material containing the transition metal, silicon and nitrogen, and one or 2 or more chromium based material films. In the photomask blank, the ratio of silicon and the transition metal of the material containing the transition metal, silicon and nitrogen is silicon:transition metal=1:1 to less than 4:1 (atom ratio), and the nitrogen content is 5 atom% or more and 40 atom% or less. Conductivity is secured since the transition metal content is high, the photomask blank has a function of charging-up prevention in a photomask manufacture process, and sufficient chemical stability for cleaning in the photomask manufacture process is secured. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有化学稳定性的光掩模坯料，在有利的硅含量中使用硅/（硅+过渡金属）作为提供更高导电性的装置，在小于80原子％的过渡金属硅化物中没有实际问题，通常认为，在通过使用微小光掩模图案的光刻曝光所需的微小光掩模的遮光膜材料中，特别是ArF的250nm以下的曝光光的光，难以用作优选的硅化合物准分子激光器等。光掩模坯料具有由包含过渡金属，硅和氮的材料构成的单层构成的遮光膜，以及含有由含有过渡金属，硅和硅的材料构成的一层或多层的多层氮气和一种或两种或更多种铬基材料膜。在光掩模坯料中，含有过渡金属，硅和氮的材料的硅和过渡金属的比例为硅：过渡金属= 1：1至小于4：1（原子比），氮含量为5 原子％以上且40原子％以下。由于过渡金属含量高，光掩模坯料具有在光掩模制造工艺中防止充电的功能，并且确保了光掩模制造工艺中的清洁足够的化学稳定性，因此确保了电导率。版权所有（C）2008，JPO＆INPIT

14. 发明专利

JP2007033470A Photomask blank, photomask, and method for manufacturing the same 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2007033470A
公开(公告)日：2007-02-08
申请号：JP2005211942
申请日：2005-07-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： KONASE YOSHIAKI , YOSHIKAWA HIROKI , MARUYAMA TAMOTSU , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/50 , G03F1/58
摘要： PROBLEM TO BE SOLVED: To provide a photomask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the same. SOLUTION: A light shielding film 12 against exposure light is disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The film is designed in such a manner that the total film thickness of the light shielding film is 100 nm or less and that the film thickness of a chromium compound having optical density (OD) of 0.025 nm -1 or less per unit film thickness with respect to light at 450 nm wavelength possesses 70% or more of the total film thickness. In order to use the photomask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 nm or 248 nm wavelength. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高精度形成精细光掩模图案的光掩模，并提供用于制造掩模毛坯的掩模。解决方案：将防曝光的遮光膜12设置在诸如石英的透明基板11的一个主面上作为光掩模基板。遮光膜12一定是所谓的“遮光膜”，但也可以作为抗反射膜。膜的设计使得遮光膜的总膜厚度为100nm以下，并且光密度（OD）为0.025nm -1的铬化合物的膜厚度相对于450nm波长的光，单位膜厚度的单位薄膜的总厚度为70％以上。为了使用光掩模坯料制造用于ArF曝光的掩模，选择遮光膜12的膜厚度和组成，以获得相对于193的光的膜的光密度OD在1.2至2.3的范围内 nm或248nm波长。版权所有（C）2007，JPO＆INPIT

15. 发明专利

JP2007033469A Phase shift mask blank, phase shift mask, and method for manufacturing the same 有权
标题翻译：相移屏蔽层，相位移屏蔽及其制造方法
公开(公告)号：JP2007033469A
公开(公告)日：2007-02-08
申请号：JP2005211941
申请日：2005-07-21
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , KUBOTA HIROSHI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： C23C14/06 , G03F1/32 , G03F1/58 , G03F1/68 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the above mask. SOLUTION: A semitransparent film 15 having a predetermined phase shift and transmittance to exposure light and a light shielding film 12 placed on the semitransparent film 15 are disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The semitransparent film 15 is a halftone phase shift layer comprising a halftone material containing both of silicon (Si) and molybdenum (Mo) as an absorbent material. In order to use the halftone phase shift mask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 or 248 nm wavelength. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高精度形成精细光掩模图案的半色调型相移掩模，并提供用于制造上述掩模的掩模板。解决方案：将具有预定相移和对曝光光的透射率的半透明膜15和放置在半透明膜15上的遮光膜12设置在诸如石英的透明基板11的一个主面上作为光掩模基板。遮光膜12一定是所谓的“遮光膜”，但也可以作为抗反射膜。半透明膜15是包含含有作为吸收材料的硅（Si）和钼（Mo）两者的半色调材料的半色调相移层。为了使用半色调相移掩模坯料来制造用于ArF曝光的掩模，选择遮光膜12的膜厚度和组成以获得在1.2至2.3范围内的膜的光密度OD，相对于在193或248nm波长的光。版权所有（C）2007，JPO＆INPIT

16. 发明专利

JP2006078825A Photomask blank, photomask and method for manufacturing same 审中-公开
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2006078825A
公开(公告)日：2006-03-23
申请号：JP2004263482
申请日：2004-09-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： C23F4/00 , G03F1/48 , G03F1/50 , G03F1/54 , H01L21/027
CPC分类号： C23F4/00 , G03F1/32 , G03F1/54 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed with high accuracy and to provide a photomask blank for the photomask. SOLUTION: A photomask substrate 11 has, on one principal face, a metal film as a light shielding layer 12 which can not be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) but can be etched by chlorine-based dry etching containing no oxygen (Cl-based dry etching) and by fluorine-based dry etching (F-based dry etching). Further, the substrate has, on the above light shielding layer 12, a metal compound film as an antireflection layer 13 which can not be substantially etched by chlorine-based dry etching containing no oxygen (Cl-based dry etching) but can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and fluorine-based dry etching (F-based dry etching). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高精度形成的精细光掩模图案的光掩模，并为光掩模提供光掩模坯料。解决方案：光掩模基板11在一个主面上具有作为遮光层12的金属膜，其不能通过含有氧（（Cl + O）的干蚀刻）的氯基干蚀刻基本上被蚀刻，但是可以通过不含氧的氯基干蚀刻（基于Cl的干蚀刻）和通过氟基干蚀刻（基于F的干蚀刻）进行蚀刻。此外，基板在上述遮光层12上具有作为防反射层13的金属化合物膜，其通过不含氧的氯基干蚀刻（基于Cl的干法蚀刻）而不能被基本蚀刻，但可以通过含有氧（（Cl + O）基干蚀刻）的氯基干蚀刻和氟基干蚀刻（F系干法蚀刻）中的至少一种。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2005292192A Halftone phase shift mask blank, halftone phase shift mask and method for transferring pattern 审中-公开
标题翻译： HALFTONE相位移动遮罩，HALFTONE相位移屏蔽和转移图案的方法
公开(公告)号：JP2005292192A
公开(公告)日：2005-10-20
申请号：JP2004103023
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： TAKAGI MIKIO , HARAGUCHI TAKASHI , KANAYAMA KOICHIRO , FUKUSHIMA YUICHI , YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank having a halftone phase shift film which can control the retardation and transmittance as a phase shift mask for exposure light and the transmittance at an inspection wavelength, which has excellent chemical resistance and excellent patterning property by etching, and to provide a phase shift mask and a method for transferring a pattern.
SOLUTION: The halftone phase shift mask 100 having a transparent region 23 and a semitransparent region 24 comprising a phase shift pattern 21a is obtained by pattering a halftone phase shift mask blank 10 prepared by forming a semitransparent layer 21 comprising a metal silicide compound thin film containing zirconium, metal except for zirconium, and silicon, on a transparent substrate 11 consisting of a quartz glass substrate or the like.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有半色调相移膜的半色调相移掩模坯料，其能够控制作为曝光的相移掩模的延迟和透射率以及检测波长的透射率，其具有优异的耐化学性并且通过蚀刻具有优异的图案化特性，并提供相移掩模和转印图案的方法。解决方案：具有透明区域23和包括相移图案21a的半透明区域24的半色调相移掩模100通过模拟通过形成包含金属硅化物化合物的半透明层21制备的半色调相移掩模坯料10获得在由石英玻璃基板等构成的透明基板11上，含有锆，除锆以外的金属和硅的薄膜。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2005292164A Halftone phase shift mask blank, halftone phase shift mask and pattern transfer method 有权
标题翻译： HALFTONE相位移动屏蔽区域，HALFTONE相位移位掩码和图案传输方法
公开(公告)号：JP2005292164A
公开(公告)日：2005-10-20
申请号：JP2004102427
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： HARAGUCHI TAKASHI , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI , YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank with a halftone phase shift film which practically satisfies requirements with respect to various properties, such as etching property and rate, electric conductivity (sheet resistance), chemical resistance and transmittance at an inspection wavelength, which become problematic in a step of producing a halftone phase shift mask and a pattern transfer step using the same, while satisfying phase difference and transmittance in exposure with short-wavelength exposure light such as F
2 laser light, and to provide a halftone phase shift mask and a pattern transfer method using the same.
SOLUTION: The halftone phase shift mask blank has the halftone phase shift film comprising a multilayer film formed by alternately stacking a light shielding layer which mainly adjusts transmittance and a transparent layer which mainly adjusts phase difference on a substrate which is transparent to exposure light, wherein an outermost surface layer is the transparent layer and the light shielding layer contains Si, a first metal component which is Mo and a second metal component which is Zr and/or Hf as constituent elements. The halftone phase shift mask and the pattern transfer method using the same are also provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供半色调相移膜的半色调相移掩模坯料，其实际上满足关于蚀刻性能和速率，电导率（薄层电阻），耐化学性和透射率等各种性能的要求在产生半色调相移掩模和使用该半色调相移掩模的图案转印步骤的步骤中成为问题的检查波长，同时满足诸如F 2的短波长曝光光的曝光时的相位差和透射率， SB>激光，并提供半色调相移掩模和使用其的图案转印方法。半色调相移掩模毛坯具有半色调相移膜，其包括通过交替层叠主要调节透射率的遮光层和主要调节对曝光透明的基板上的相位差的透明层而形成的多层膜光，其中最外表面层是透明层，遮光层含有Si，作为Mo的第一金属成分和作为构成元素的Zr和/或Hf的第二金属成分。还提供了半色调相移掩模和使用其的图案转印方法。版权所有（C）2006，JPO＆NCIPI

19. 发明专利

JP2008257274A Method for manufacturing photomask 审中-公开
标题翻译：制造光电子的方法
公开(公告)号：JP2008257274A
公开(公告)日：2008-10-23
申请号：JP2008194458
申请日：2008-07-29
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KONASE YOSHIAKI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/32 , G03F1/58 , G03F1/68 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask by which a fine photomask pattern can be formed with high accuracy. SOLUTION: A light shielding layer 12 and an antireflection layer 13 of a chromium compound are successively formed on a photomask substrate 11, and a resist film 17 is formed on the antireflection layer 13. The resist film 17 is formed, preferably, relatively thin so as not to increase the aspect ratio, and preferably at most 350 nm thickness, and preferably, at least 75 nm, when the film is made of a general resist material. After the resist film 17 is processed to obtain a resist pattern, the chromium compound antireflection layer 13 is patterned through oxygen-containing chlorine dry etching (in a (Cl+O) atmosphere), and subsequently the light-shielding layer 12 is patterned by oxygen-free chlorine dry etching (in a Cl atmosphere), wherein the light-shielding layer indicates etching durability, to a degree that substantial etching against the oxygen-containing chlorine dry etching (in a (Cl+O) atmosphere) does not occur. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造可以以高精度形成精细光掩模图案的光掩模的方法。解决方案：在光掩模基板11上依次形成铬化合物的遮光层12和抗反射层13，并且在抗反射层13上形成抗蚀剂膜17.抗蚀剂膜17最好形成相对较薄，从而当膜由通常的抗蚀剂材料制成时，不增加纵横比，优选至多350nm厚度，优选至少75nm。在抗蚀剂膜17被加工以获得抗蚀剂图案之后，通过含氧氯干蚀刻（在（Cl + O）气氛）中对铬化合物抗反射层13进行构图，随后通过以下方式对遮光层12进行图案化无氧氯干蚀刻（在Cl气氛中），其中遮光层表示蚀刻耐久性，到达不会发生对含氧氯干蚀刻（在（Cl + O）气氛中）的基本蚀刻的程度。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2007241137A Halftone phase shift mask and method for manufacturing the same 有权
标题翻译： HONEFTONE相位移屏蔽及其制造方法
公开(公告)号：JP2007241137A
公开(公告)日：2007-09-20
申请号：JP2006066633
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： HARAGUCHI TAKASHI , FUKUSHIMA YUICHI , CHIBA KAZUAKI , KOJIMA YOSUKE , SAGA TADASHI , YOSHIKAWA HIROKI , INAZUKI SADAOMI , KANEKO HIDEO , OKAZAKI SATOSHI
IPC分类号： G03F1/29 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask that can significantly improve CD (critical dimension) performance, and to provide a method for manufacturing the mask.
SOLUTION: The halftone phase shift mask has an engraved portion in a substrate transparent to exposure light so as to control the phase of transmitted light, and is characterized in that a light shielding film provided in a portion adjacent to the engraved portion of the substrate or in a peripheral portion of the substrate includes a film (A) made of a material which can be etched in an etching process using an etching gas essentially comprising a fluorine-based gas.
COPYRIGHT: (C)2007,JPO&INPIT

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