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11. 发明专利

JPS5335392A MODE CONTROLLED SEMICONDUCTOR LASER 失效
公开(公告)号：JPS5335392A
公开(公告)日：1978-04-01
申请号：JP11053776
申请日：1976-09-13
申请人： SHARP KK
发明人： MATSUI KANEKI , KOMURO AKIRA , KURATA YUKIO , YAMAMOTO SABUROU , YANO MORICHIKA
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:The gain of a basic mode is effectively used and stable oscillation is accomplished by making the thickness of an active layer close to both cleavage faces thicker than the central portion and making the gain distribution of said layer in the direction perpendicular to a junction face larger at the centeral part and smaller at the periphery.

12. 发明专利

JPS538090A DOUBLE HETERO TYPE LASER ELEMENT 失效
公开(公告)号：JPS538090A
公开(公告)日：1978-01-25
申请号：JP8219976
申请日：1976-07-09
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KURATA YUKIO , MATSUI MASAMASU , KOMURO AKIRA
IPC分类号： H01L21/208 , H01S5/00
摘要： PURPOSE:To improve differential quantum efficiency and prolong lifetime by doping a given amount of Si into the impurity of a GaAs active layer thereby making even the characteristics of a double hetero type laser.

13. 发明专利

JPS5257790A SEMICONDUCTOR SCANNER 失效
公开(公告)号：JPS5257790A
公开(公告)日：1977-05-12
申请号：JP13371975
申请日：1975-11-06
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI MASAMI , KOMURO AKIRA
IPC分类号： H01S5/00 , H01S5/026 , H04N3/12 , H04N3/14 , H04N5/70
摘要： PURPOSE:A semiconductor scanning device suitable for coupling to optical fibers, etc. is obtained by providing the row of respectively independent laser light emitting elements and the row of respectively independent light receiving elements parallel to said row and opposedly to each light emitting element on one semiconductor substrate, directly connecting each opposing light element only through the substrate respectively and applying a multi-phase pulse voltage to the light receiving element row.

14. 发明专利

JPS57159085A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57159085A
公开(公告)日：1982-10-01
申请号：JP17397181
申请日：1981-10-29
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KOMURO AKIRA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： H01L21/308 , H01L21/208 , H01S5/00 , H01S5/20 , H01S5/223
摘要： PURPOSE:To reduce the oscillation starting current value and to contrive the extension of life of the subject semiconductor laser element by a method wherein an interlayer solid phase diffusion of dopant, which was contained in the ohmic contact layer to be used for the formation of electrodes of double-hetero junction type GaAs laser formed by lamination, is performed on a grown layer. CONSTITUTION:The first layer 13, the second layer 14, the third layer 15, and the fourth layer 16 are formed by lamination on an N GaAs substrate 12. A stripe type etching is performed on the fourth layer 16. The fifth layer, whereon Zn was doped, for ohmic contact is grown on the layer 16, and when the crystal layer is maintaind in a low temperature for a fixed time, 0.3mum of the Zn of the fifth layer 18 is diffused to the fourth layer 16, and a dopant layer 19 is formed. A P-side electrode and an N-side electrode 21 are formed, and are used as a semiconductor laser element. As a result, the oscillation starting current is reduced, laser output characteristics are improved, and the life of the laser element can be extended.

15. 发明专利

JPS57149785A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57149785A
公开(公告)日：1982-09-16
申请号：JP17397281
申请日：1981-10-29
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA , YANO MORICHIKA
IPC分类号： H01L21/308 , H01L21/208 , H01S5/00 , H01S5/223
摘要： PURPOSE:To improve element characteristics and laser output characteristics for long life by a method wherein striped structure is provided for the inside of crystal by utilizing a high-concentration impurity contained in an ohmic contact layer for electrode formation by using a layer solid phase diffusion technique. CONSTITUTION:The first layer n-Ga1-xAlxAS13, the second layer n-GaAS 14 becoming an active layer, the third layer p-Ga1-xAlxAS15, the fourth layer n- GaAs 16 are successively stacked on an n-GaAS substrate 12 to form double heter junction structure. In the layer 16, the region becoming a filament section is etched in V-notch type grooved shape to form a V notch filament section 17 and furthermore, the fifth layer p -GaAS 18 is staked on the layer 16. And a dopant diffusion layer 19 in which an impurity doped to the layer 18 is diffused in solid phase by thermal treatment is formed at the part locating around the in terface of the layer 18. The region formed the layer 19 is converted from n type to p type by the induction of a p type impurity and becomes a micro region because the layer 19 is formed by diffusion from right below the vertical angle section of the bottom of the V notch groove.

16. 发明专利

JPS54130889A SELECTION METHOD OF SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS54130889A
公开(公告)日：1979-10-11
申请号：JP3906578
申请日：1978-03-31
申请人： SHARP KK
发明人： TAKENAKA TAKUO , HAYASHI HIROSHI , KOMURO AKIRA , MURATA KAZUHISA , YANO MORICHIKA
IPC分类号： H01L21/66 , H01S5/00
摘要： PURPOSE:To improve a selection probability by using the etch-pit method or the X- ray tomograph method to form a pattern corresponding to the dislocation density which exists in a crystal grown layer and using a microscope to observe this pattern. CONSTITUTION:N-type GaAs substrate 1 having (100) face is used as a laser substrate, and N-type Ga0.7Al0.3As layer 2, p-type or N-type GaAs active layer 3, p- type Ga0.7Al0.3As layer 4 and p-type GaAs layer 5 are laminated on substrate 1 and are grown epitaxially in liquid phase. Next, melting KOH is applied onto top layer 5 to expose etc-hpit 11 corresponding to dislocation of the crystal surface to the surface, and insulating film 6 such as SiO2 and Si3N4 is caused to adhere to all the surface of layer 5. After that, stripe part 21 is provided in film 6, and Zn for ohmic contact is diffused into layer 5 through this part 21, and p-side electrode 8 and N- side electrode 7 are caused to adhere to the surface and the reverse face. Next, the substrate is cut off along the cleavage face, and devices are observed individually through electrode 8 and film 6 by a microscope and are cheked for goodness on a basis of the pit generation state.

17. 发明专利

JPS54114091A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS54114091A
公开(公告)日：1979-09-05
申请号：JP2109278
申请日：1978-02-24
申请人： SHARP KK
发明人： KURATA YUKIO , YANO MORICHIKA , YAMAMOTO SABUROU , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： G11B7/125 , H01S5/00 , H01S5/026
摘要： PURPOSE:To ensure the high SN signal detection by combining the interaction between the optical driving system and the information detection system and then securing the self-amplification for the detection signal by the synergetic effect of the both systems. CONSTITUTION:The n-layer 2, p-layer 3 of GaAs plus electrode 4 are laminated on copper state 1, and laser element 7 and photo detector 8 are divided at groove 6. The p-layer of the photo detector is converted to n-layer 9, and the resistance value varies with irradiation of the light. When switch 10 is closed, the laser beam is emitted. And the light given from the groove side is received at detector 8, and the light emitted from the opposite side is irradiated to, for example, the optical disk and then turned to the reflected light corresponding to the disk information to be put into element 7 again. With the reincidence of the light, the laser output of elememt 7 increases, and the electric resistance of detector 8 decreases to layer 9. Thus, the driving current of element 7 increases by constant power source 11, and then the read signal of the reflected light corresponding to the disk information is amplified by the positive feedback. And the binary state is obtained from the current value of detector 12 by the presence or absence of the reflected light.

18. 发明专利

JPS5472692A STRIPE STRUCTURE AND MANUFACTURE FOR SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS5472692A
公开(公告)日：1979-06-11
申请号：JP14139277
申请日：1977-11-21
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01L21/306 , H01S5/00
摘要： PURPOSE:To form the current concentration mechanism, by selectively etching only the specific material of active layer and forming the remaning layer in stripe shape. CONSTITUTION:The n Ga0.55Al0.45As9, nGa0.3Al0.7As10, active layer PGaAs11, pGa0.7Al0.3As12, and pGaAs 13 are laminated on the Si added nGaAs1 and the growing layer in stripe shape is made by etching from the layer 13 to the substrate 1. Next, when selective etching is made with HF, the layers 10 and 12 under x 0.4 only is etched. In this case, it is easy to made the layer 9 as W'

19. 发明专利

JPS53132283A STRIPE CONSTRUCTION AND PRODUCTION OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS53132283A
公开(公告)日：1978-11-17
申请号：JP4703677
申请日：1977-04-22
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , KOMURO AKIRA
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To reduce the oscillation start voltage, to enhance the element characteristics and laser output characteristics, and to extend the service life by avoiding generation of dislocation utilizing the internal diffusion from the solid phase and by narrowing the oscillation region limiting the current path in the vicinity of active layer.

20. 发明专利

JPS53123689A STRIPE STRUCTURE AND MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS53123689A
公开(公告)日：1978-10-28
申请号：JP3863377
申请日：1977-04-04
申请人： SHARP KK
发明人： YAMAMOTO SABUROU , YANO MORICHIKA , KOMURO AKIRA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To obtain a semiconductor laser device whose oscillation starting current value is small by evading turnover generation which occurs in an active region, by forming a stripe structure through internal diffusion from a solid phase.

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