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11. 发明专利

JP2002373970A Mounting structure for semiconductor device 有权
标题翻译：半导体器件的安装结构
公开(公告)号：JP2002373970A
公开(公告)日：2002-12-26
申请号：JP2001181481
申请日：2001-06-15
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： OKADA YASUHIRO , NARUSE MIKIO , FURUKAWA SUKEYUKI , SHIBUYA AKIHIRO
IPC分类号： H01L25/07 , H01L23/48 , H01L25/18
CPC分类号： H01L2224/0603 , H01L2224/48091 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent a bottom from becoming convex upward in a semiconductor module formed by stacking metallic electrode plates where semiconductor chips are joined. SOLUTION: Metallic electrode plates 10A, 20A, and 30A are molded on a resin base 50A, an IGBT 40p and an FWD 42p are joined to a main part 11A of the metallic electrode plate 10A, and an IGBT 40n and an FWD 42n are joined to a lower stage 22A of the metallic electrode plate 20A. With respect to the bottom of the module where the main part 11A and the lower stage 22A are exposed, a connecting portion 12A of the metallic electrode plate 10A and a connecting portion 32A of the metallic electrode plate 30A rise vertically on the end of the resin base, are opposed to each other, and protrude from the resin base in a perpendicular direction to a paper face to serve as an external connecting portion. Since rising portions of the connecting portions are not formed at the center, shrinkage is not prevented on a side wall of a case resin base during cooling after molding, and the bottom of the module becomes convex downward and comes into contact with a heatsink 58A.
摘要翻译：要解决的问题：为了防止在通过堆叠半导体芯片接合的金属电极板形成的半导体模块中向下凸起。解决方案：将金属电极板10A，20A和30A模制在树脂基座50A上，将IGBT 40p和FWD 42p接合到金属电极板10A的主体部分11A，并且连接IGBT 40n和FWD 42n 到金属电极板20A的下段22A。对于主体部11A和下侧22A露出的模块的底部，金属电极板10A的连接部12A和金属电极板30A的连接部32A在树脂的端部上升基部彼此相对，并且从与树脂基板垂直的方向从纸面突出以用作外部连接部。由于连接部分的上升部分不形成在中心，因此在模制后的冷却期间壳体树脂基体的侧壁上的收缩不会被阻止，并且模块的底部向下凸起并与散热器58A接触。

12. 发明专利

JP2010205834A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010205834A
公开(公告)日：2010-09-16
申请号：JP2009048132
申请日：2009-03-02
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： HAYASHI TETSUYA , HOSHI MASAKATSU , TANAKA HIDEAKI , YAMAGAMI SHIGEHARU , SUZUKI TATSUHIRO , SHIBUYA AKIHIRO , SATO YOSHINORI , MATSUZAKI SHIGENOBU , FURUKAWA SUKEYUKI , UENO DAIGO , MARUYAMA WATARU
IPC分类号： H01L27/04 , H01L21/28 , H01L21/337 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/12 , H01L29/41 , H01L29/47 , H01L29/739 , H01L29/78 , H01L29/80 , H01L29/808 , H01L29/861 , H01L29/872
CPC分类号： H01L2224/48137 , H01L2224/49111 , H01L2224/49175 , H01L2924/12032 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor which is reduced in size and shortens a convergence time of a vibration phenomenon occurring in a reflux diode during reverse bias by adjacently arranging the reflux diode and a semiconductor snubber circuit, which are connected in parallel to each other. SOLUTION: The semiconductor device includes the reflux diode 100 which performs unipolar operation, and the semiconductor snubber circuit 200 which has at least a capacitor 210 and resistance 220, and is connected to the reflux diode 100 in parallel, and is adjacently arranged to the reflux diode 100. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种尺寸减小的半导体，并且通过相邻地布置回流二极管和半导体缓冲电路来缩短在反向偏压期间在回流二极管中发生的振动现象的会聚时间，半导体缓冲电路彼此平行。解决方案：半导体器件包括执行单极性操作的回流二极管100和至少具有电容器210和电阻220并且并联连接到回流二极管100并且相邻布置的半导体缓冲电路200 到回流二极管100.版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2008306872A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008306872A
公开(公告)日：2008-12-18
申请号：JP2007153058
申请日：2007-06-08
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： FURUKAWA SUKEYUKI
IPC分类号： H02M7/48 , H02M1/00 , H02M3/28 , H03K17/16 , H03K17/56 , H03K19/00
CPC分类号： H01L2224/49111
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in parasitic inductance during switching operation of a switching device, and also reduced in size and cost. SOLUTION: In this semiconductor device which connects an IGBT11 connected in parallel with a FWD12 and an IGBT13 connected in parallel with a FWD14, in series between a positive electrode 1 and a negative electrode 2 to output power from a connection point between the two IGBTs11 and 13 to an output electrode 3, the positive electrode 1 and an output electrode 3 are placed adjacent to each other, the negative electrode 2 is placed on an upper side of the output electrode 3, external connection points in the positive electrode 1 and the negative electrode 2 are placed in parallel adjacently in the positions facing the external connection point of the output electrode 3, the IGBT11 and FWD12 are placed on the positive electrode 1, and the IGBT13 and the FWD14 are placed on the output electrode 3 located in the position sandwiching the IGBT11, the FWD 12 and the negative electrode 2. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在开关装置的开关操作期间降低寄生电感的半导体器件，并且还减小了尺寸和成本。解决方案：在将与FWD12并联连接的IGBT11和与FWD14并联连接的IGBT13串联连接在正电极1和负极2之间的该半导体器件中，从输出功率将两个IGBT11和13连接到输出电极3，正电极1和输出电极3彼此相邻放置，负电极2放置在输出电极3的上侧，正电极1中的外部连接点负极2在与输出电极3的外部连接点相对的位置上平行放置，IGBT11和FWD12被放置在正极1上，并且IGBT13和FWD14被放置在位于输出电极3的输出电极3上在夹持IGBT11，FWD12和负极2的位置。版权所有（C）2009，JPO＆INPIT

14. 发明专利

JP2006031959A Bus bar 审中-公开
标题翻译：母线
公开(公告)号：JP2006031959A
公开(公告)日：2006-02-02
申请号：JP2004204707
申请日：2004-07-12
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： FURUKAWA SUKEYUKI , SHIBUYA AKIHIRO , ONO KOYO , NARUSE MIKIO
IPC分类号： H01B7/00 , H05K7/06
摘要： PROBLEM TO BE SOLVED: To provide a bus bar contributing to miniaturization of the whole of a device. SOLUTION: Two conductors 10 are placed adjacently each other and extended so that their surfaces equivalent to the long sides of their rectangular cross-sections are parallel with each other, and they are molded by an insulator 20 of an insulating resin to integrally form the whole. The insulator 20 is also filled and formed in a space between the adjacently disposed conductors 10. Terminals 11 are formed at both ends of the conductor 10, and the terminals 11 are protruded and exposed from the insulator 20. Since the insulator 20 is required to have excellent thermal conductivity to discharge Joule heat generated from the conductors 10 to the outside in addition to insulation performance to insulate the conductors 10, they are formed by using a resin manifesting high thermal conductivity. Thereby, no space for insulation is required to be secured around the bus bar 1, and the device in which the bus bar 1 is incorporated can be miniaturized. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供有助于整个装置的小型化的汇流条。解决方案：两个导体10彼此相邻放置并延伸，使得它们相当于其矩形横截面的长边的表面彼此平行，并且它们由绝缘树脂的绝缘体20模制成一体形成整体。绝缘体20也被填充并形成在相邻布置的导体10之间的空间中。端子11形成在导体10的两端，并且端子11从绝缘体20突出并暴露。由于要求绝缘体20 具有优异的导热性，除了绝缘性能以外，还可以将从导体10产生的焦耳热量放出到外部，以使导体10绝缘，因此它们通过使用表现出高热导率的树脂形成。因此，不需要将绝缘空间固定在汇流条1周围，并且可以使其中装有母线1的装置小型化。版权所有（C）2006，JPO＆NCIPI

15. 发明专利

JP2005123219A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005123219A
公开(公告)日：2005-05-12
申请号：JP2003353138
申请日：2003-10-14
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： UENO DAIGO , FURUKAWA SUKEYUKI
IPC分类号： H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve insulation and cooling properties of a semiconductor device without increasing a cost. SOLUTION: The semiconductor device has a configuration where the surface of a bus-bar 4 opposite to another surface bonded to a semiconductor chip 1 is bonded to a cooler 10 through an insulating layer 5. The insulating layer 5 is formed on the bus-bar 4 so as to spread over its surface bonded to the cooler 10 extending, at least, from its side. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高半导体器件的绝缘和冷却性能而不增加成本。解决方案：半导体器件具有这样一种配置，其中母线4与与半导体芯片1接合的另一表面相对的表面通过绝缘层5接合到冷却器10.绝缘层5形成在汇流条4，以便在其表面上分布，其表面粘结到至少从其侧面延伸的冷却器10。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP2005064291A Insulation sheet and semiconductor device assembly using the same 审中-公开
标题翻译：绝缘片和半导体器件组装使用相同
公开(公告)号：JP2005064291A
公开(公告)日：2005-03-10
申请号：JP2003293494
申请日：2003-08-14
申请人： Fuji Polymer Industries Co Ltd , Nissan Motor Co Ltd , 富士高分子工業株式会社 , 日産自動車株式会社
发明人： SHIBUYA AKIHIRO , FURUKAWA SUKEYUKI , NARUSE MIKIO , EHIRA ATSUSHI , OGAWA KAZUHIRO , OTA HIROTOMO , ABE KAZUYOSHI
IPC分类号： H01L23/36 , H01L23/373 , H01L23/40 , H01L23/473
CPC分类号： H01L23/4006 , H01L23/3737 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an insulation sheet where thermal conductivity is improved without degrading insulation.
SOLUTION: In the insulation sheet 1 which is provided between a semiconductor device 20 and a heat sink 30, a thermally conductive filler of 70 to 93 mass% is contained in the base material of organo-polysiloxane, and the quantity of conductive impurity in this insulation sheet is ≤500 ppm or less.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在不降低绝缘性的情况下提高导热性的绝缘片。解决方案：在设置在半导体器件20和散热器30之间的绝缘片1中，在有机聚硅氧烷的基材中含有70〜93质量％的导热性填料，导电性该绝缘片中的杂质≤500ppm以下。版权所有（C）2005，JPO＆NCIPI

17. 发明专利

JP2015023040A 基板構造审中-公开
标题翻译：基板结构
公开(公告)号：JP2015023040A
公开(公告)日：2015-02-02
申请号：JP2013147305
申请日：2013-07-16
申请人：日産自動車株式会社 , Nissan Motor Co Ltd
发明人： MORIGUCHI KENJI , MURAI HIROAKI , FURUKAWA SUKEYUKI
IPC分类号： H05K3/34 , H05K1/02
摘要：【課題】スルーホールにおけるハンダ状態を確認可能としつつ、スルーホールにおけるハンダと導体との接触面積の確保が可能基板構造を提供すること。【解決手段】基板22の第1面としての上面22a上から基板22を貫通するスルーホール21の内面に沿って第1導体41を延在し、スルーホール21から所定距離離れた位置に、基板22を上面22aから第2面としての下面22bへ貫通する監視穴5を設け、基板22の下面22b上で監視穴5の周囲に第2導体42を設けるとともに、この第2導体42を第1導体41に接続させことを特徴とする基板構造とした。【選択図】図3
摘要翻译：要解决的问题：提供一种能够确保通孔中的焊料和导体之间的接触面积的基板结构，同时能够确认通孔中的焊接状态。解决方案：公开了一种基板结构，其是其特征在于，第一导体41沿着穿过基板22的通孔21的内表面作为基板22的第一表面从顶表面22a的上方延伸，从顶表面贯穿基板22的监视孔5 22a通过作为第二表面的下表面22b设置在与通孔21分开预定距离的位置处，在基板22的下表面22b上的监视孔5的周边设置有第二导体42 并且该第二导体42被连接到第一导体41。

18. 发明专利

JP2014022490A Electric power conversion apparatus 审中-公开
标题翻译：电力转换装置
公开(公告)号：JP2014022490A
公开(公告)日：2014-02-03
申请号：JP2012158418
申请日：2012-07-17
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： ABE MASANOBU , UENO DAIGO , FURUKAWA SUKEYUKI , NAKAMURA HIROKI
IPC分类号： H01L25/18 , H01L23/34 , H01L23/473 , H01L25/07
CPC分类号： H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an electric power conversion apparatus which secures the insulation quality without increasing a passage cross section area, thereby securing the heat exchange efficiency.SOLUTION: An electric power conversion apparatus comprises: a semiconductor element 4 serving as a heating element which generates heat; a conductive heat receiving member 1 where the semiconductor element 4 is mounted on a surface 11 serving as a first surface and a cooling fin 13 is formed on a rear surface 12 serving as a second surface; an insulative inner cover 2 which is coupled to the heat receiving member 1 and forms a passage 5, where a refrigerant flows around the cooling fin 13, between itself and the heat receiving member 1; and an outer cover 3 which covers the inner cover 2 and is coupled to the inner cover 2.
摘要翻译：要解决的问题：提供一种在不增加通道横截面积的同时确保绝缘质量的电力转换装置，从而确保热交换效率。电力转换装置包括：用作加热元件的半导体元件产生热量在用作第一表面的表面11上安装半导体元件4的导热接收元件1和用作第二表面的后表面12上形成冷却片13; 绝缘内盖2，其连接到热接收构件1并形成通道5，其中制冷剂在冷却翅片13周围自身与受热构件1之间流动; 以及覆盖内盖2并联接到内盖2的外盖3。

19. 发明专利

JP2013161993A Cooling structure of semiconductor module 有权
标题翻译：半导体模块的冷却结构
公开(公告)号：JP2013161993A
公开(公告)日：2013-08-19
申请号：JP2012023676
申请日：2012-02-07
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： UENO DAIGO , FURUKAWA SUKEYUKI
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To solve the problem that, in a joint part between a semiconductor module and a cooler, a semiconductor element having high temperature cannot be sufficiently cooled even though there is a level difference in a coolant passage.SOLUTION: In a cooling structure of a semiconductor module including: a semiconductor module mounting first semiconductor elements 12 and second semiconductor elements 11 which have temperature higher than the first semiconductor elements 12 when used; and a cooler 51 which includes therein a passage in which a coolant flows to cool the semiconductor module, one or more of the first semiconductor elements 12 are arranged in a first row in a direction in which the coolant flows, one or more of the second semiconductor elements 11 are arranged in a second row, a joint part between the semiconductor module and the cooler 51 has a narrower passage cross section area of the passage in which the coolant flows by the thickness of the cooler 51 in comparison with a part where the semiconductor module and the cooler 51 are not jointed, and the thickness of at least one of an upper stream and a lower stream of the second row among the thicknesses of the cooler in the joint part is thinner than the thickness of at least one of an upper stream and a lower stream of the first row.
摘要翻译：要解决的问题：为了解决在半导体模块和冷却器之间的接合部分中，即使冷却剂通道存在水平差，也不能充分冷却具有高温的半导体元件。解决方案：在冷却半导体模块的结构包括：半导体模块，其安装在使用时具有高于第一半导体元件12的温度的第一半导体元件12和第二半导体元件11; 以及冷却器51，其中包括冷却剂流过冷却半导体模块的通道，一个或多个第一半导体元件12沿冷却剂流动的方向排列成第一排，第二个半导体元件11布置在第二排中，半导体模块和冷却器51之间的接合部分具有通道的较窄的通道横截面积，其中冷却剂流过冷却器51的厚度，与其中半导体模块和冷却器51不接合，并且接合部中的冷却器的厚度中的第二排的上游流和下游流中的至少一个的厚度比以下中的至少一个的厚度薄上游流和第一行的下游流。

20. 发明专利

JP2013161943A Mounting structure of electronic device 审中-公开
标题翻译：电子设备安装结构
公开(公告)号：JP2013161943A
公开(公告)日：2013-08-19
申请号：JP2012022700
申请日：2012-02-06
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： MORIGUCHI KENJI , FURUKAWA SUKEYUKI
IPC分类号： H05K1/18
摘要： PROBLEM TO BE SOLVED: To provide a mounting structure of an electronic device which secures good solderability of a terminal and achieves smooth insertion of the terminal into a through hole.SOLUTION: Multiple through holes 5, through which terminals 4 of a device body 11 penetrate, are provided on a printed wiring board 2 so as to be respectively positioned near multiple lands 3. The multiple terminals 4 provided at the device body 11 respectively have lengths that enable the multiple terminals 4 to penetrate through the through holes 5 and protrude a predetermined amount thereof from a surface 2a of the printed wiring board 2. Extension parts 4b of the terminals 4 which protrude from the through holes 5 are disposed so as to face the land parts 3, and the land parts 3 and the extension parts 4b of the terminals 4 are soldered in a surface mounting manner.
摘要翻译：要解决的问题：提供一种电子装置的安装结构，其确保端子的良好的可焊性，并实现端子平滑地插入通孔中。解决方案：多个通孔5，器件主体11的端子4穿过该穿孔设置在印刷布线板2上，以分别位于多个焊盘3附近。设置在器件主体11处的多个端子4分别具有使多个端子4能够穿过通孔5的长度，并突出预定的从印刷电路板2的表面2a的数量。从通孔5突出的端子4的延伸部分4b设置成面对陆部3，并且陆部3和延伸部4b 端子4以表面安装方式焊接。

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