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11. 发明专利

JPH10223632A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10223632A
公开(公告)日：1998-08-21
申请号：JP2146997
申请日：1997-02-04
申请人： NIPPON STEEL CORP
发明人： SASAKI TSUTOMU , DONOMAE HITOSHI , IMAFUKU MUNEYUKI
IPC分类号： H01L23/52 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a high electromigration resistance by forming a titanium layer immediately below an Al or Al alloy wiring layer and adjusting the half value width of the locking curve of the X-ray diffraction peak of the face having a specific orientational property of the Al or Al alloy wiring layer to a specific value or smaller. SOLUTION: In a semiconductor device in which a barrier metal layer composed of titanium or titanium nitride and a wiring layer composed of Al or Al alloy are formed on a semiconductor substrate, the titanium layer is formed immediately below the Al or Al alloy wiring layer. The half value width of the locking curve of the X-ray diffraction peak of the (111)-face of the Al or Al wiring layer is adjusted to

12. 发明专利

JPH10167834A PRODUCTION OF SILICON NITRIDE CERAMIC SINTERED COMPACT 失效
公开(公告)号：JPH10167834A
公开(公告)日：1998-06-23
申请号：JP32671696
申请日：1996-12-06
申请人： NIPPON STEEL CORP
发明人： WATANABE KOJI , ASADA SHUJI , IMAFUKU MUNEYUKI
IPC分类号： C04B35/64 , C04B35/584
摘要： PROBLEM TO BE SOLVED: To prevent color forming in the surface layer of a sintered compact, to impact uniform breaking strength to the surface layer and interior and to reduce a margin to grind in the surface by firing silicon nitride ceramics in an atmosphere of nitrogen or argon while preventing the generation of a reduction atmosphere. SOLUTION: Silicon nitride ceramics is fixed in an atmosphere of nitrogen, argon, etc., while preventing the generation of a reducing atmosphere. Tungsten or superkanthal is preferably used as a heating element and a case for housing the ceramics is preferably made of a carbon-free material such as boron nitride, silicon nitride, aluminum nitride, sialon, alumina, magnesia or zirconia. The surface thickening of a specified element and the formation of a so-called surface layer can be prevented. The surface layer and interior of the resultant silicon nitride ceramic sintered compact have the same color tone.

13. 发明专利

JPH08166496A CONVERSION METHOD AND CONVERTER FOR X-RAY ENERGY SPECTRUM 失效
公开(公告)号：JPH08166496A
公开(公告)日：1996-06-25
申请号：JP30803094
申请日：1994-12-13
申请人： NIPPON STEEL CORP
发明人： TAKAGI YASUO , IMAFUKU MUNEYUKI
IPC分类号： G21K1/10
摘要： PURPOSE: To obtain an X-ray energy spectrum converter which has a constant conversion efficiency over a wide area and is free from the inclusion of diffracted X rays by using a composition modulation thin film whose composition in the accumulating direction changes periodically or aperiodically. CONSTITUTION: A composition modulation thin film whose composition in the depositing direction changes periodically or aperiodically is used in a method for converting an X-ray energy spectrum. X rays are incident from one surface of the thin film and the incident X rays are selectively absorbed inside the thin film, when an X-ray energy spectrum which has penetrated the opposite surface is turned into an energy spectrum different from the incident X rays. As to an amorphous composition modulation thin film used for an X-ray energy spectrum converter, for example, extremely thin layers 12 and 13 which are differently composed are alternately evaporated out an evaporation substrate 11 which absorbs few X rays of high molecules and the like by a sputtering evaporation methods. The formation of the layers 12 and 13 as amorphous layers makes it possible to avoid the appearance of the influence of diffracted X rays in the penetrating X-ray spectrum.

14. 发明专利

JPH07118828A PRODUCTION OF HIGH CORROSION RESISTANT STAINLESS STEEL 失效
公开(公告)号：JPH07118828A
公开(公告)日：1995-05-09
申请号：JP26124793
申请日：1993-10-19
申请人： NIPPON STEEL CORP
发明人： IMAFUKU MUNEYUKI , SHIMADA HARUO
IPC分类号： E04F13/12 , C23C14/06
摘要： PURPOSE:To produce a stable high corrosion resistant stainless steel without completely coating with a compound thin film. CONSTITUTION:Chromium nitride is deposited on the surface part of the stainless steel in an insular state by physical vapor deposition method. Or furthermore, >=25% to

15. 发明专利

JPH04139007A PRODUCTION OF OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH04139007A
公开(公告)日：1992-05-13
申请号：JP25523090
申请日：1990-09-27
申请人： NIPPON STEEL CORP
发明人： SHIMADA HARUO , IMAFUKU MUNEYUKI , TAKAGI YASUO , KURAKADO MASAHIKO
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , H01L39/24
摘要： PURPOSE:To obtain an oxide superconducting thin film high in critical current density at a low film forming temp. in counter target type vapor deposition by providing a couple of substrates and counter electrodes respectively outside and inside an ionized gas confined by an electromagnetic force and impressing a voltage between both members. CONSTITUTION:A couple of targets 3a and 3b having a superconducting composition are set in an evacuated closed vessel 7, the gases 1a, 1b and 1c contg. oxygen are introduced into the vessel 7, a voltage is impressed between the targets 3a and 3b to generate an ionized gas, and the ionized gas is confined by an electromagnetic force. A DC voltage is simultaneously impressed between a substrate 5 provided outside the confined ionized gas and a counter electrode 6 furnished inside the ionized gas from a DC power source 8. Consequently, oxygen is effectively added to a superconducting composition being deposited on the substrate 5, and a film is formed at low temp.

16. 发明专利

JP2003027148A Method for manufacturing sintered ore 有权
标题翻译：烧结炉的制造方法
公开(公告)号：JP2003027148A
公开(公告)日：2003-01-29
申请号：JP2001212480
申请日：2001-07-12
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： NISHIFUJI MASAYUKI , FUJIOKA YUJI , IMAFUKU MUNEYUKI , TANAKA YUKIMOTO , SAITO KOUJI , HAYASHI SHUNICHI , KANEHASHI KOJI , OKAZAKI JUN , HOSOYA YOZO
IPC分类号： C22B1/16
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing sintered ore by which the productivity and product yield of the sintered ore can be improved in the case where iron ore containing hydrous iron oxides is used as a raw material for sintering and also the quality of the sintered ore, such as cold strength and reduction degradation characteristic, can be improved. SOLUTION: The iron ore containing the hydrous iron oxides is previously roasted in a roasting furnace to undergo removal of bound water in the hydrous iron oxides and then mixed with the other raw materials for sintering. The resultant mixture is pelletized and charged into a sintering machine to undergo sintering. In this method for sintering the sintered ore, heating temperature at the above roasting is set at a value not lower than the dissociation temperature of the bound water in the hydrous iron oxides and lower than the dissociation temperature of structure water in clay minerals.
摘要翻译：要解决的问题：提供一种制造烧结矿的方法，其中使用含铁水合铁氧化物的铁矿石作为烧结原料的情况下可提高烧结矿的生产率和产品产率，可以提高烧结矿，例如冷强度和还原降解特性。解决方案：含铁氧化物的铁矿石预先在焙烧炉中焙烧，以除去含水氧化铁中的结合水，然后与其他原料混合烧结。将所得混合物造粒并装入烧结机中进行烧结。在烧结矿石的烧结方法中，将上述焙烧时的加热温度设定为不低于含水铁氧化物中的结合水的解离温度，并低于粘土矿物中结构水的解离温度。

17. 发明专利

JPH10223565A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10223565A
公开(公告)日：1998-08-21
申请号：JP2146897
申请日：1997-02-04
申请人： NIPPON STEEL CORP
发明人： SASAKI TSUTOMU , DONOMAE HITOSHI , TATSUMI KOHEI , IMAFUKU MUNEYUKI , TAKEBAYASHI SHIGETO
IPC分类号： C23C14/14 , C23C14/35 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which has a high electromigration or stress-migration resistance and is provided with highly reliable Al or an Al alloy. SOLUTION: A semiconductor manufacturing method in which a wiring layer is formed on a barrier metal layer, which is formed on a semiconductor substrate and is composed of a metal having a high melting point or its alloy by the magnetron sputtering method, is characterized in that the Ar pressure is adjusted to

18. 发明专利

JPH06293514A REBACUO SERIES OXIDE SUPERCONDUCTIVE THIN FILM 失效
公开(公告)号：JPH06293514A
公开(公告)日：1994-10-21
申请号：JP10369393
申请日：1993-04-07
申请人： NIPPON STEEL CORP
发明人： IMAFUKU MUNEYUKI , SHIMADA HARUO
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain REBaCuO series oxide superconductive thin film low in deterioration of a superconductive characteristics in a reductive atmosphere such as high temp. and low oxygen partial pressure. CONSTITUTION:In the REBaCuO series oxide superconductive thin film (RE is one kind among Er, Y, Ho, Dy, Gd, Eu or the combination of >=2 kinds), the metal component composition is RE:Ba=1:(1.9-2.1) and (RE+Ba)=52-56 atom % by atomic ratio. In this way, the REBaCuO series oxide superconductive thin film high in reliability as a practical material as compared with a conventional material is obtained, and the process low in deterioration of the production device at the time of producing the thin film is provided, moreover, the deterioration of element characteristic at the time of producing an applied element using the thin film is prevented.

19. 发明专利

JPH05294618A 失效
公开(公告)号：JPH05294618A
公开(公告)日：1993-11-09
申请号：JP11990292
申请日：1992-04-15
申请人： NIPPON STEEL CORP
发明人： SHIMADA HARUO , TOKUMARU SHINJI , IMAFUKU MUNEYUKI , HASHIMOTO MISAO
IPC分类号： C01G1/00 , C01G3/00 , C30B23/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To improve a feeding method of oxygen and insulating property by exposing a target into a prescribed plasma and then depositing an oxide thin film onto a substrate. CONSTITUTION:An oxygen pressure in a closed vessel 3 is set to an oxygen pressure (preferably, 1mTorr-100mTorr) higher than an oxygen partial pressure for depositing an oxide thin film onto a substrate 7 by controlling the gas charge and discharge amounts in a gas inlet valve 1 and a gas outlet valve 2. Then an opening and closing plate 5 is closed and a plasma generating electric source 6 is opened and a plasma is generated between a target 4 and the vessel 3 and plasma-producing electric power is set to 0.05-10W/cm . Then the target 4 is exposed in the plasma for 10min-10hr and the opening and closing plate 5 are opened and the oxide thin film is deposited on a substrate 7 in a plasma of a gas composition having oxygen partial pressure lower than that in exposing the target to produce the desired objective film.

20. 发明专利

JPH05221614A PRODUCTION OF THIN OXIDE SUPERCONDUCTING FILM 失效
公开(公告)号：JPH05221614A
公开(公告)日：1993-08-31
申请号：JP6314991
申请日：1991-03-27
申请人： NIPPON STEEL CORP
发明人： SHIMADA HARUO , IMAFUKU MUNEYUKI
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To produce a thin oxide superconducting film having excellent superconducting characteristics and to enable the film-forming at a low temperature by generating ionized gas near a substrate separately from the ionized gas for sputtering, thereby allowing effective taking of oxygen into the thin film during deposition. CONSTITUTION:A closed vessel capable of confining and localizing ionized gas between a pair of targets by magnetic force is used in the present process and a substrate is placed in a region out of the localized area of the ionized gas. In the above process, an additional ionized gas is generated near the substrate in the region out of the localized area of the first ionized gas. For example, a thin film having excellent superconducting characteristics can be produced even at a film-forming temperature of 400-600 deg.C by using a gaseous mixture of Ar and O2 and carrying out the film-forming under a vacuum of 3X10 Torr in the closed vessel while applying high-frequency power of 200W to the target for generating ionized gas for sputtering and 5-50W to the electrode for generating ionized gas near the substrate.

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