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    • 16. 发明专利
    • LOGIC GATE CIRCUIT
    • JPS5642434A
    • 1981-04-20
    • JP11819679
    • 1979-09-14
    • NIPPON ELECTRIC CO
    • MORI SUSUMU
    • H03K19/088
    • PURPOSE:To make it possible to improve output dielectric strength greatly by providing a pulldown transistor. CONSTITUTION:Pulldown transistor TRQ7 is provided. Resistance R7 is connected to the base of TRQ7, the cathode of SBD (Schottky barrier diode) D2 to the collector, and the base of output TRQ3 to the emitter; and the other terminal of resistance R7 is connected to the base of phase dividing stage TRQ2, and the anode of SBD.D2 to the base of off-buffer poststage TRQ6. When either of input terminals 1 is at ''0'', TRQ1 turns on and then TRs Q2, Q3, Q4, and Q7 turn off, so that ''1'' will appear at output terminal 3. When a high voltage is applied to terminal 3 in this state, TRs Q5 and Q6 also turn off and no current flows into the output until the output voltage becomes high enough to break down two emitter junction parts of TRs Q5 and Q6. Thus, even when voltage Vcc of electric power source terminal 2 is 5V, output dielectric strength VOB is not less than 17V and when VCC is OV, VOB is 12V, improving the output dielectric strength greatly.
    • 17. 发明专利
    • LOGIC GATE CIRCUIT
    • JPS55163918A
    • 1980-12-20
    • JP7141179
    • 1979-06-07
    • NIPPON ELECTRIC CO
    • MORI SUSUMU
    • H03K19/088
    • PURPOSE:To increase output dielectric strength by combining pulldown transistors with phase-dividing stage and output-side transistors. CONSTITUTION:When either input terminal 1 is held at a level of ''0'', input-side and power-side transistors Q1 and Q7 conduct and phase-dividing stage and output- stage transistors Q2 and Q3 become unconductive, so that an output terminal where output-side and pulldown transistors Q3 and Q4 are also cut off will be held at a level of ''1''. In this state, when a high voltage is applied to terminal 3 from the outside, prior-stage and post-stage transistors Q5 and Q6 of an off-buffer become unconductive and no current flows to the output until an enough voltage to break down the emitter junction between both the transistors. Therefore, when an electric power voltage is 5V in this case, the output voltage is 17V or more and when 0V, it is 12V, so that the output dielectric strength will increase remarkably as compared with the conventional dielectric strength of 6V, etc.